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1. 发明授权

US07033904B2 Semiconductor device, semiconductor substrate and fabrication process of a semiconductor device 有权
标题翻译：半导体器件，半导体衬底和半导体器件的制造工艺
公开(公告)号：US07033904B2
公开(公告)日：2006-04-25
申请号：US11001313
申请日：2004-12-02
申请人： Katsuyoshi Kirikoshi , Eiichi Kawamura
发明人： Katsuyoshi Kirikoshi , Eiichi Kawamura
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , H01L23/522 , H01L2223/5442 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first insulation layer including a first conductor pattern, a second insulation layer formed on the first insulation layer and including a second conductor pattern, and a third conductor pattern formed on the second insulation layer, wherein there is formed a first alignment mark part in the first insulation layer by a part of the first conductor pattern, the third conductor pattern is formed with a second alignment mark part corresponding to the first alignment mark part, the first and second alignment marks forming a mark pair for detecting alignment of the first conductor pattern and the third conductor pattern, the second conductor pattern being formed in the second insulation layer so as to avoid the first alignment mark part.
摘要翻译：半导体器件包括：第一绝缘层，包括第一导体图案;第二绝缘层，形成在第一绝缘层上并包括第二导体图案;第三导体图案，形成在第二绝缘层上，其中形成第一对准通过第一导体图案的一部分标记在第一绝缘层中的部分，第三导体图案形成有与第一对准标记部对应的第二对准标记部，第一和第二对准标记形成用于检测第第一导体图案和第三导体图案，第二导体图案形成在第二绝缘层中，以避免第一对准标记部分。

2. 发明申请

US20060125101A1 Semiconductor device, semiconductor substrate and fabrication process of a semiconductor device 有权
公开(公告)号：US20060125101A1
公开(公告)日：2006-06-15
申请号：US11350840
申请日：2006-02-10
申请人： Katsuyoshi Kirikoshi , Eiichi Kawamura
发明人： Katsuyoshi Kirikoshi , Eiichi Kawamura
IPC分类号： H01L23/52 , H01L23/544
CPC分类号： H01L23/544 , H01L23/522 , H01L2223/5442 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first insulation layer including a first conductor pattern, a second insulation layer formed on the first insulation layer and including a second conductor pattern, and a third conductor pattern formed on the second insulation layer, wherein there is formed a first alignment mark part in the first insulation layer by a part of the first conductor pattern, the third conductor pattern is formed with a second alignment mark part corresponding to the first alignment mark part, the first and second alignment marks forming a mark pair for detecting alignment of the first conductor pattern and the third conductor pattern, the second conductor pattern being formed in the second insulation layer so as to avoid the first alignment mark part.

3. 发明申请

US20060027926A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE AND FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，半导体器件和半导体器件的制造工艺
公开(公告)号：US20060027926A1
公开(公告)日：2006-02-09
申请号：US11001313
申请日：2004-12-02
申请人： Katsuyoshi Kirikoshi , Eiichi Kawamura
发明人： Katsuyoshi Kirikoshi , Eiichi Kawamura
IPC分类号： H01L21/44 , H01L23/52
CPC分类号： H01L23/544 , H01L23/522 , H01L2223/5442 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first insulation layer including a first conductor pattern, a second insulation layer formed on the first insulation layer and including a second conductor pattern, and a third conductor pattern formed on the second insulation layer, wherein there is formed a first alignment mark part in the first insulation layer by a part of the first conductor pattern, the third conductor pattern is formed with a second alignment mark part corresponding to the first alignment mark part, the first and second alignment marks forming a mark pair for detecting alignment of the first conductor pattern and the third conductor pattern, the second conductor pattern being formed in the second insulation layer so as to avoid the first alignment mark part.
摘要翻译：半导体器件包括：第一绝缘层，包括第一导体图案;第二绝缘层，形成在第一绝缘层上并包括第二导体图案;第三导体图案，形成在第二绝缘层上，其中形成第一对准通过第一导体图案的一部分标记在第一绝缘层中的部分，第三导体图案形成有与第一对准标记部对应的第二对准标记部，第一和第二对准标记形成用于检测第第一导体图案和第三导体图案，第二导体图案形成在第二绝缘层中，以避免第一对准标记部分。

4. 发明授权

US07291931B2 Semiconductor device, semiconductor substrate and fabrication process of a semiconductor device 有权
标题翻译：半导体器件，半导体衬底和半导体器件的制造工艺
公开(公告)号：US07291931B2
公开(公告)日：2007-11-06
申请号：US11350840
申请日：2006-02-10
申请人： Katsuyoshi Kirikoshi , Eiichi Kawamura
发明人： Katsuyoshi Kirikoshi , Eiichi Kawamura
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , H01L23/522 , H01L2223/5442 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first insulation layer including a first conductor pattern, a second insulation layer formed on the first insulation layer and including a second conductor pattern, and a third conductor pattern formed on the second insulation layer,wherein there is formed a first alignment mark part in the first insulation layer by a part of the first conductor pattern, the third conductor pattern is formed with a second alignment mark part corresponding to the first alignment mark part, the first and second alignment marks forming a mark pair for detecting alignment of the first conductor pattern and the third conductor pattern, the second conductor pattern being formed in the second insulation layer so as to avoid the first alignment mark part.
摘要翻译：半导体器件包括：第一绝缘层，包括第一导体图案;第二绝缘层，形成在第一绝缘层上并包括第二导体图案;第三导体图案，形成在第二绝缘层上，其中形成第一对准通过第一导体图案的一部分标记在第一绝缘层中的部分，第三导体图案形成有与第一对准标记部对应的第二对准标记部，第一和第二对准标记形成用于检测第第一导体图案和第三导体图案，第二导体图案形成在第二绝缘层中，以避免第一对准标记部分。

5. 发明授权

US06656879B2 Method of reversible selective manifestation of different states of functional element 失效
标题翻译：功能元素不同状态的可逆选择性表现方法
公开(公告)号：US06656879B2
公开(公告)日：2003-12-02
申请号：US08070859
申请日：1993-06-03
申请人： Kyoji Tsutsui , Takehito Yamaguchi , Hideaki Ema , Masaru Shimada , Hiroshi Goto , Ichiro Sawamura , Eiichi Kawamura , Keishi Kubo , Shoji Maruyama , Hiroki Kuboyama , Keishi Taniguchi
发明人： Kyoji Tsutsui , Takehito Yamaguchi , Hideaki Ema , Masaru Shimada , Hiroshi Goto , Ichiro Sawamura , Eiichi Kawamura , Keishi Kubo , Shoji Maruyama , Hiroki Kuboyama , Keishi Taniguchi
IPC分类号： B41M520
CPC分类号： B41M5/305
摘要： A method of reversible selective manifestation of different states of a functional element is disclosed. The functional element is composed of at least two compounds and is capable of alternatively assuming (a) a first state in which the two compounds interact to form a regular aggregate structure, or (b) a second state in which the two compounds do not interact, and at least one of the two compounds is in an aggregate or crystallized state. The respective conditions for attaining one of the two states can be reversibly and extremely speedily controlled, for instance, by use of a heat application device.
摘要翻译：公开了一种功能元件的不同状态的可逆选择性表现的方法。功能元件由至少两种化合物组成，并且能够替代地（a）第一种状态，其中两种化合物相互作用形成规则的聚集体结构，或（b）两种化合物不相互作用的第二种状态，并且两种化合物中的至少一种处于聚集或结晶状态。用于实现两种状态中的一种状态的各个条件可以可逆地且极其快速地控制，例如通过使用热施加装置。

6. 发明授权

US06420095B1 Manufacture of semiconductor device using A-C anti-reflection coating 失效
标题翻译：使用A-C抗反射涂层制造半导体器件
公开(公告)号：US06420095B1
公开(公告)日：2002-07-16
申请号：US09466830
申请日：1999-12-20
申请人： Eiichi Kawamura , Teruyoshi Yao , Nobuhisa Naori , Koichi Hashimoto , Masaharu Kobayashi , Tadasi Oshima
发明人： Eiichi Kawamura , Teruyoshi Yao , Nobuhisa Naori , Koichi Hashimoto , Masaharu Kobayashi , Tadasi Oshima
IPC分类号： G03F700
CPC分类号： G03F7/091
摘要： A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity Isw=I&dgr;/Iave to 0.2 or smaller, where Iave is an average value of light intensity in the photoresist film, and I&dgr; is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在光反射表面上形成透明氧化膜; 在透明膜的表面上形成抗反射性的a-c膜; 并在抗反射膜的表面上涂覆光致抗蚀剂膜并对抗蚀剂膜进行构图，其中选择抗反射膜和透明膜的厚度，以将驻波强度Isw = Idelta / Iave设定为0.2 或更小，其中Iave是光致抗蚀剂膜中的光强度的平均值，Idelta是光强度变化的幅度。可以在具有小尺寸变化和高精度的高反射性基板上形成精细图案。

7. 发明授权

US4609928A Thermosensitive image transfer medium 失效
标题翻译：热敏图像转印介质
公开(公告)号：US4609928A
公开(公告)日：1986-09-02
申请号：US561011
申请日：1983-12-13
申请人： Keishi Kubo , Nobuhiro Takigawa , Eiichi Kawamura
发明人： Keishi Kubo , Nobuhiro Takigawa , Eiichi Kawamura
IPC分类号： B41M5/333 , B41M5/00 , B41M5/392 , B41M5/52 , B41M5/22
CPC分类号： B41M5/392 , B41M5/5227
摘要： A thermosensitive image transfer medium consisting of (i) an image transfer sheet having an image transfer layer consisting essentially of a leuco dye, and (ii) an acceptor sheet having an acceptor layer consisting essentially of a color developer which induces color formation in the leuco dye, the color developer being a mixture of a bisphenol derivative of the following formula and a p-hydroxybenzoic acid ester with a melting point of 100.degree. C. or less, and, of the image transfer layer and said acceptor layer, at least one layer containing a porous filler having an oil absorption of 50 ml/100 g or more as measured in accordance with the Japanese Industrial Standard K 5101, ##STR1## wherein X.sup.1 and X.sup.2 each represent a lower alkyl group or halogen, R.sup.1 and R.sup.2 each represent hydrogen or an alkyl group having 1 to 6 carbon atoms, and m and n each represent an integer of 0 through 4.
摘要翻译：一种热敏图像转印介质，由以下组成：（i）具有基本上由无色染料组成的图像转印层的图像转印片，和（ii）具有基本上由彩色显影剂组成的受体层的受主片，所述受体层在无色物质中诱导着色形成染料，着色显影剂是下式的双酚衍生物和熔点为100℃以下的对羟基苯甲酸酯的混合物，以及图像转移层和所述受体层的至少一种含有根据日本工业标准K 5101（IMAGE）测定的吸油量为50ml / 100g以上的多孔填料的层，其中X1和X2各自表示低级烷基或卤素，R1和R2各自表示氢或碳原子数1〜6的烷基，m和n分别表示0〜4的整数。

8. 发明授权

US4534569A Stern tube seal device providing a seal about a rotatable shaft 失效
标题翻译：船尾管密封装置围绕可旋转轴提供密封
公开(公告)号：US4534569A
公开(公告)日：1985-08-13
申请号：US593331
申请日：1984-03-26
申请人： Kenichiro Ishitani , Takashi Unseki , Saburo Amiboshi , Eiichi Kawamura
发明人： Kenichiro Ishitani , Takashi Unseki , Saburo Amiboshi , Eiichi Kawamura
IPC分类号： B63H23/32 , F16J15/00 , F16J15/40 , F16J15/46 , F16J15/32 , F16J15/48
CPC分类号： B63H23/321 , F16J15/002 , F16J15/40 , F16J15/46 , B63H2023/327
摘要： A stern tube seal device providing a seal about a rotatable shaft includes an annular case member arranged about the outer periphery of a shaft, a gap between the annular case member and the shaft is sealed by a plurality of lip seals, a floating ring seal or a pressure type hollow ring is arranged in the middle of the lip seal, and pressure fluid is charged into the rear portion of the floating ring seal or into the pressure type hollow ring to enhance the sealing effect by pressure of the fluid.
摘要翻译：提供围绕可旋转轴的密封件的艉管密封装置包括围绕轴的外周布置的环形壳体构件，环形壳体构件和轴之间的间隙由多个唇形密封件，浮动环密封件或在唇形密封件的中间设置有压力型中空环，并且将压力流体填充到浮动环形密封件的后部或压力型中空环中，以通过流体的压力增强密封效果。

9. 发明授权

US06348519B1 Emulsion ink and printing method using emulsion ink 失效
标题翻译：乳液油墨和使用乳液油墨的印刷方法
公开(公告)号：US06348519B1
公开(公告)日：2002-02-19
申请号：US09547346
申请日：2000-04-11
申请人： Kouichi Ohshima , Masanaga Imamura , Keishi Taniguchi , Eiichi Kawamura , Hiroshi Adachi
发明人： Kouichi Ohshima , Masanaga Imamura , Keishi Taniguchi , Eiichi Kawamura , Hiroshi Adachi
IPC分类号： E09D1100
CPC分类号： C09D11/0235
摘要： Emulsion ink, by which clear images are produced, having excellent drying and fixing properties and preservation stability and does not bleed, strike through or leak. The emulsion ink contains an aqueous emulsified ultraviolet cure compound.
摘要翻译：产生清晰图像的乳液墨具有优异的干燥和定影性能和保存稳定性，并且不会渗血，渗透或渗漏。乳液油墨含有水性乳化紫外线固化化合物。

10. 发明授权

US4632403A Stern tube seal device providing a seal about a rotatable shaft 失效
标题翻译：船尾管密封装置围绕可旋转轴提供密封
公开(公告)号：US4632403A
公开(公告)日：1986-12-30
申请号：US701978
申请日：1985-02-15
申请人： Kenichiro Ishitani , Takashi Unseki , Saburo Amiboshi , Eiichi Kawamura
发明人： Kenichiro Ishitani , Takashi Unseki , Saburo Amiboshi , Eiichi Kawamura
IPC分类号： B63H23/32 , F16J15/00 , F16J15/40 , F16J15/46 , F16J15/48
CPC分类号： B63H23/321 , F16J15/002 , F16J15/40 , F16J15/46 , B63H2023/327
摘要： A stern tube seal device providing a seal about a rotatable shaft includes an annular case member arranged about the outer periphery of a shaft, a gap between the annular case member and the shaft sealed by a plurality of lip seals, a floating ring seal or a pressure type hollow ring is arranged in the middle of the lip seal, and pressure fluid is charged into the rear portion of the floating ring seal or into the pressure type hollow ring to enhance the sealing effect by the pressure of the fluid.
摘要翻译：提供围绕可旋转轴的密封件的艉管密封装置包括围绕轴的外周布置的环形壳体构件，环形壳体构件与由多个唇形密封件密封的轴之间的间隙，浮动环密封件或压力型中空环设置在唇形密封件的中间，并且压力流体被填充到浮动环形密封件的后部或压力型中空环中，以通过流体的压力增强密封效果。

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