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1. 发明授权

US4926648A Turbomolecular pump and method of operating the same 失效
标题翻译：涡轮分子泵及其操作方法
公开(公告)号：US4926648A
公开(公告)日：1990-05-22
申请号：US318206
申请日：1989-03-03
申请人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
发明人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
IPC分类号： F04B37/06 , F04D19/04
CPC分类号： F04B37/06 , F04D19/046 , Y10S417/901
摘要： A turbomolecular pump having a rotor provided with a plurality of rotor blades and a spacer provided with a plurality of stator blades so that gas molecules are sucked in from a suction port, compressed and discharged from an exhaust port. The pump further has a heat exchanger provided inside the suction port, the heat exchanger being connected to a refrigerator through a refrigerant pipe and a gate valve provided on the upstream side of the suction port. Gases having low molecular weights, particularly water vapor, are freeze-trapped on the heat exchanger. Thus, it is possible to efficiently exhaust gases having low molecular weights, particularly water vapor, and hence to obtain a high vacuum of good quality. In addition, it is easy to start and suspend operation of the system and possible to run it on a continuous basis.

2. 再颁专利

USRE36610E Evacuation apparatus and evacuation method 失效
标题翻译：疏散装置和撤离方法
公开(公告)号：USRE36610E
公开(公告)日：2000-03-14
申请号：US883957
申请日：1997-06-27
申请人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
发明人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
IPC分类号： F04B37/06 , F04D19/04 , B01D8/00
CPC分类号： F04D19/046 , F04B37/06
摘要： An evacuation apparatus and method using a turbomolecular pump having a rotor provided with a plurality of rotor blades and a spacer provided with a plurality of stator blades so that gas molecules are sucked in from a suction port, compressed and discharged from an exhaust port of the turbomolecular pump is disclosed. A heat exchanger is provided at the suction port side of the turbomolecular pump to freeze-trap gas molecules from being cooled by a helium refrigerator.The gate valve is disposed upstream of the heat exchanger and is provided in a suction pipe which extends between the vacuum vessel and the turbomolecular pump. In exhausting the vacuum vessel, the gate valve is opened and, in this state, the turbomolecular pump and the helium refrigerator are run. During regeneration, the gate valve is closed, the turbomolecular pump is run, and the heat exchanger is heated by means of a heater or by operation of the helium refrigator being suspended, thereby sublimating molecules freeze-trapped in the heat exchanger.
摘要翻译：一种使用涡轮分子泵的排气装置和方法，该涡轮分子泵具有设置有多个转子叶片的转子和设置有多个定子叶片的间隔件，使得气体分子从吸入口被吸入，公开了涡轮分子泵。在涡轮分子泵的吸入口侧设置有热交换器，以将气体分子冷冻而不被氦制冷机冷却。闸阀设置在热交换器的上游，并且设置在在真空容器和涡轮分子泵之间延伸的吸入管中。在排空真空容器时，打开闸阀，在这种状态下运行涡轮分子泵和氦制冷机。在再生期间，闸阀关闭，涡轮分子泵运行，并且热交换器通过加热器或通过悬浮的氦气回流器的操作被加热，从而升华分子被冻结在热交换器中。

3. 发明授权

US5062271A Evacuation apparatus and evacuation method 失效
标题翻译：排气装置和排气方法
公开(公告)号：US5062271A
公开(公告)日：1991-11-05
申请号：US519377
申请日：1990-05-04
申请人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
发明人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
IPC分类号： F04B37/16 , B01J3/02 , F04B37/06 , F04D19/04 , H01L21/302 , H01L39/24
CPC分类号： F04D19/046 , F04B37/06 , Y10S417/901
摘要： An evacuation apparatus and method using a turbomolecular pump having a rotor provided with a plurality of rotor blades and a spacer provided with a plurality of stator blades so that gas molecules are sucked in from a suction port, compressed and discharged from an exhaust port of the turbomolecular pump is disclosed. A heat exchanger is provided at the suction port side of the turbomolecular pump to freeze-trap gas molecules from being cooled by a helium refrigerator.The gate valve is disposed upstream of the heat exchanger and is provided in a suction pipe which extends between the vacuum vessel and the turbomolecular pump. In exhausting the vacuum vessel, the gate valve is opened and, in this state, the turbomolecular pump and the helium refrigerator are run. During regeneration, the gate valve is closed, the turbomolecular pump is run, and the heat exchanger is heated by means of a heater or by operation of the helium refrigator being suspended, thereby sublimating molecules freeze-trapped in the heat exchanger.

4. 发明授权

US06929722B2 Substrate plating apparatus 有权
标题翻译：基板电镀装置
公开(公告)号：US06929722B2
公开(公告)日：2005-08-16
申请号：US09945711
申请日：2001-09-05
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
IPC分类号： C25D7/12 , H01L21/00 , H01L21/288 , H01L21/768 , C25D17/00 , H01M4/29 , C23B3/00
CPC分类号： H01L21/67167 , C25D17/001 , H01L21/2885 , H01L21/67051 , H01L21/67126 , H01L21/67161 , H01L21/67173 , H01L21/6719 , H01L21/67219 , H01L21/6723 , H01L21/76849 , H01L21/76877 , Y10S134/902
摘要： A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit are combined into a unitary arrangement.
摘要翻译：基板电镀装置在由微细凹槽和/或限定在基板中的细孔构成的互连区域上形成布线层。基板电镀装置包括用于在包括互连区域的基板的表面上形成镀层的电镀单元，用于对基板进行化学机械抛光以从基板的表面移除镀层的化学机械抛光单元，互连区域中的镀层，用于在形成镀层之后对基板进行清洗或基板进行化学机械抛光的清洁单元，用于在清洁基板之后使基板干燥的干燥单元，以及用于将基板转印第一电镀单元，第一化学机械抛光单元，清洁单元和干燥单元中的每一个的基板。第一电镀单元，第一化学机械抛光单元，清洁单元，干燥单元和基板转移单元组合成一体的布置。

5. 发明授权

US06294059B1 Substrate plating apparatus 有权
标题翻译：基板电镀装置
公开(公告)号：US06294059B1
公开(公告)日：2001-09-25
申请号：US09154895
申请日：1998-09-17
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
IPC分类号： C25D1700
CPC分类号： H01L21/67167 , C25D17/001 , H01L21/2885 , H01L21/67051 , H01L21/67126 , H01L21/67161 , H01L21/67173 , H01L21/6719 , H01L21/67219 , H01L21/6723 , H01L21/76849 , H01L21/76877 , Y10S134/902
摘要： A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit are combined into a unitary arrangement.
摘要翻译：基板电镀装置在由微细凹槽和/或限定在基板中的细孔构成的互连区域上形成布线层。基板电镀装置包括用于在包括互连区域的基板的表面上形成镀层的电镀单元，用于对基板进行化学机械抛光以从基板的表面移除镀层的化学机械抛光单元，互连区域中的镀层，用于在形成镀层之后对基板进行清洗或基板进行化学机械抛光的清洁单元，用于在清洁基板之后使基板干燥的干燥单元，以及用于将基板转印第一电镀单元，第一化学机械抛光单元，清洁单元和干燥单元中的每一个的基板。第一电镀单元，第一化学机械抛光单元，清洁单元，干燥单元和基板转移单元组合成一体的布置。

6. 发明授权

US06547638B2 Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device 失效
公开(公告)号：US06547638B2
公开(公告)日：2003-04-15
申请号：US09804232
申请日：2001-03-13
申请人： Katsuya Okumura , Riichirou Aoki , Hiromi Yajima , Seiji Ishikawa , Manabu Tsujimura
发明人： Katsuya Okumura , Riichirou Aoki , Hiromi Yajima , Seiji Ishikawa , Manabu Tsujimura
IPC分类号： B24B5100
CPC分类号： H01L21/67161 , B08B1/04 , B24B27/0023 , B24B37/04 , B24B37/345 , B24B51/00 , B24B55/12 , F24F3/161 , H01L21/67028 , H01L21/67046 , H01L21/67057 , H01L21/67167 , H01L21/67219 , H01L21/67745 , H01L21/67778 , H03M13/39 , H04N5/4401 , H04N5/455
摘要： A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

7. 发明申请

US20080251385A1 PLATING APPARATUS 审中-公开
标题翻译：电镀设备
公开(公告)号：US20080251385A1
公开(公告)日：2008-10-16
申请号：US12116562
申请日：2008-05-07
申请人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
发明人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
IPC分类号： C25D21/12
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , C25D17/12 , C25D17/14 , H01L21/2885 , H01L21/67046 , H01L21/67051 , H01L21/6708 , H01L21/6715 , H01L21/6723 , H01L21/76877 , H01L21/76879 , H01L2924/0002 , H05K3/423 , H01L2924/00
摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.
摘要翻译：用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。该装置具有基板保持部分36，其水平地保持并旋转基板，其表面被面向上。密封材料90接触表面的周缘部分，以水密的方式密封该部分。阴极电极88在与基板接触时通过电流。阴极部38与基板保持部36一体旋转。电极臂部分30在阴极部分38的上方并且可水平和垂直地移动，并且阳极98面向下。将电镀液注入被镀表面与接近待镀表面的阳极98之间的空间中。因此，电镀处理和附带的处理可以通过单个单元进行。

8. 发明授权

US06632335B2 Plating apparatus 有权
标题翻译：电镀装置
公开(公告)号：US06632335B2
公开(公告)日：2003-10-14
申请号：US09742110
申请日：2000-12-22
申请人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
发明人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
IPC分类号： C25D2112
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , C25D17/12 , C25D17/14 , H01L21/2885 , H01L21/67046 , H01L21/67051 , H01L21/6708 , H01L21/6715 , H01L21/6723 , H01L21/76877 , H01L21/76879 , H01L2924/0002 , H05K3/423 , H01L2924/00
摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.
摘要翻译：用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。该装置具有将待镀表面向上水平保持并旋转的衬底的衬底保持部分 36 。密封材料 90 接触表面的外围边缘部分，以水密的方式密封该部分。当与基板接触时，阴极电极 88 通过电流。阴极部分 38 与衬底保持部分 36 整体旋转。电极臂部分 30 在阴极部分 38 之上，水平和垂直移动并具有阳极 PDAT> 98 面朝下。将电镀液倒入要被镀表面和靠近待镀表面的阳极 98 之间的空间中。因此，电镀处理和附带的处理可以通过单个单元执行

9. 发明授权

US5885138A Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device 失效
公开(公告)号：US5885138A
公开(公告)日：1999-03-23
申请号：US767060
申请日：1996-12-16
申请人： Katsuya Okumura , Riichirou Aoki , Hiromi Yajima , Seiji Ishikawa , Manabu Tsujimura
发明人： Katsuya Okumura , Riichirou Aoki , Hiromi Yajima , Seiji Ishikawa , Manabu Tsujimura
IPC分类号： B08B1/04 , B24B27/00 , B24B37/04 , B24B51/00 , B24B55/12 , F24F3/16 , H01L21/00 , H01L21/677 , H03M13/39 , H04L1/00 , H04N5/44 , H04N5/455 , B24B5/00 , B24B7/00 , B24B9/00 , B24B29/00
CPC分类号： H01L21/67161 , B08B1/04 , B24B27/0023 , B24B37/04 , B24B37/345 , B24B51/00 , B24B55/12 , F24F3/161 , H01L21/67028 , H01L21/67046 , H01L21/67057 , H01L21/67167 , H01L21/67219 , H01L21/67745 , H01L21/67778 , H03M13/39 , H04N5/455 , H04N5/4401
摘要： A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

10. 发明授权

US07387717B2 Method of performing electrolytic treatment on a conductive layer of a substrate 失效
标题翻译：在基板的导电层上进行电解处理的方法
公开(公告)号：US07387717B2
公开(公告)日：2008-06-17
申请号：US10631726
申请日：2003-08-01
申请人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
发明人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
IPC分类号： C25D7/12
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , C25D17/12 , C25D17/14 , H01L21/2885 , H01L21/67046 , H01L21/67051 , H01L21/6708 , H01L21/6715 , H01L21/6723 , H01L21/76877 , H01L21/76879 , H01L2924/0002 , H05K3/423 , H01L2924/00
摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.
摘要翻译：用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。该装置具有基板保持部分36，其水平地保持并旋转基板，其表面被面向上。密封材料90接触表面的周缘部分，以水密的方式密封该部分。阴极电极88在与基板接触时通过电流。阴极部38与基板保持部36一体地旋转。电极臂部30在阴极部38的上方，水平且垂直地移动，阳极98面朝下。将电镀液注入被镀表面与接近待镀表面的阳极98之间的空间中。因此，电镀处理和附带的处理可以通过单个单元进行。

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