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    • 2. 发明授权
    • Conductive copper paste composition
    • 导电铜浆组成
    • US4789411A
    • 1988-12-06
    • US29830
    • 1987-03-24
    • Kazumasa EguchiFumio NakataniShinichi WakitaHisatoshi MurakamiTsunehiko Terada
    • Kazumasa EguchiFumio NakataniShinichi WakitaHisatoshi MurakamiTsunehiko Terada
    • H01B1/22H05K1/09H05K9/00B23K35/34
    • H05K9/0083H01B1/22H05K1/095
    • A conductive copper paste composition is adapted to yield a highly conductive film receptive to solders without pretreatment. This conductive paste comprises a copper metal powder, a resin component including a thermosetting resin, and an assortment of additives. In use, the paste is applied to an insulation substrate to a predetermined circuit pattern and cured in situ. Soldering can then be performed directly on the cured circuit. This contributes not only to the conductivity of the circuit but dispenses with the activation treatment and electroless plating or electroplating that have heretofore been essential prior to soldering. The invention, therefore, results in a substantial curtailment of production process and a proportional economic advantage. In addition, this conductive paste can be used in such applications as electrode and through-hole connections, formation of electromagnetic and electrostatic shield layers, and so on in the manufacture and assembly of electronic components and circuits.
    • 导电铜浆组合物适于产生不经预处理而接受焊料的高导电膜。 该导电糊包括铜金属粉末,包含热固性树脂的树脂组分和各种添加剂。 在使用中,将膏体施加到绝缘基板至预定电路图案并原位固化。 然后可以在固化电路上直接进行焊接。 这不仅有助于电路的导电性,而且还省去了在焊接之前迄今为止必须的激活处理和化学镀或电镀。 因此,本发明导致生产过程大大削减并具有比例的经济优势。 此外,该导电性糊剂可用于诸如电极和通孔连接,电磁和静电屏蔽层的形成等在电子元件和电路的制造和组装中的应用。
    • 8. 发明授权
    • Method for manufacturing a semiconductor device
    • 半导体器件的制造方法
    • US06274422B1
    • 2001-08-14
    • US09290096
    • 1999-04-12
    • Shinichi Wakita
    • Shinichi Wakita
    • H01L218234
    • H01L27/0629
    • A first conductive type well layer is formed on a surface of a first conductive type semiconductor substrate. A second conductive type impurity diffusion layer having the conductive type opposite from the first conductive type is formed on a surface of this first conductive type well layer. A second conductive type well layer is formed below the first conductive type well layer. This second conductive type well layer is provided at its both ends with terminals comprising second conductive type well layers passing through the first conductive type semiconductor substrate to reach its surface.
    • 第一导电型阱层形成在第一导电型半导体衬底的表面上。 在该第一导电类型阱层的表面上形成具有与第一导电类型相反的导电类型的第二导电型杂质扩散层。 在第一导电类型阱层下面形成第二导电类型阱层。 该第二导电类型阱层的两端设置有通过第一导电型半导体衬底到达其表面的第二导电类型阱层的端子。
    • 9. 发明授权
    • Conductive paint having good adhesion to molding of metallic oxide
    • 导电涂料对金属氧化物的成型具有良好的粘合性
    • US5567357A
    • 1996-10-22
    • US424427
    • 1995-04-21
    • Shinichi Wakita
    • Shinichi Wakita
    • C09D5/24C09D161/04C09D161/06H01B1/22H05K1/09H01B1/16
    • H01B1/22C09D5/24H05K1/095
    • A conductive paint having a good adhesion to a molding of metallic oxide comprises: 100 parts by weight of silver-plated copper powder containing silver plating in the amount of not more than 30 wt %; 13.6-6.0 parts by weight of phenolic resin (solid content); 0.2-0.7 part by weight of one selected from saturated fatty acids, unsaturated fatty acids, metallic salts thereof, and coupling agents containing saturated fatty acids or unsaturated fatty acids; 1.0-4.0 parts by weight of triethanolamine; and 0.1-1.0 part by weight of dihydroxybenzene. The phenolic resin is a resol phenolic resin having an infrared spectrum that satisfies the following relationships:(A) 1/n=0.8-1.2(B) m/n=0.8-1.2(C) b/a=0.8-1.2(D) c/a=1.2-1.5wherein 1, m, n, a, b and c are, respectively, infrared transmittances of 2-monosubstitution product, 2,4-disubstitution product, 2,4,6-trisubstitution product, methylol group, dimethylenether, and phenol group.
    • PCT No.PCT / JP94 / 01401 Sec。 371日期1995年04月21日 102(e)1995年4月21日PCT PCT 1994年8月24日PCT公布。 公开号WO95 / 06092 日期1995年3月2日具有与金属氧化物成型性良好的粘合性的导电性涂料包含:100重量份含银量的不超过30重量%的镀银铜粉末; 13.6-6.0重量份酚醛树脂(固含量); 0.2-0.7重量份选自饱和脂肪酸,不饱和脂肪酸,其金属盐和含有饱和脂肪酸或不饱和脂肪酸的偶联剂; 1.0-4.0重量份三乙醇胺; 和0.1-1.0重量份的二羟基苯。 酚醛树脂是具有满足以下关系的红外光谱的甲阶酚醛树脂:(A)1 / n = 0.8-1.2(B)m / n = 0.8-1.2(C)b / a = 0.8-1.2(D )c / a = 1.2-1.5其中1,m,n,a,b和c分别是2-单取代产物,2,4-二取代产物,2,4,6-三取代产物,羟甲基的红外透射率 ,二甲基苯和苯酚基。
    • 10. 发明授权
    • Nonvolatile semiconductor memory device
    • 非易失性半导体存储器件
    • US5917751A
    • 1999-06-29
    • US52427
    • 1998-03-31
    • Shinichi Wakita
    • Shinichi Wakita
    • G11C17/00G11C16/02G11C16/06G11C16/16G11C16/34H01L21/8247H01L27/115H01L29/788H01L29/792G11C16/04
    • G11C16/3409G11C16/16G11C16/3404
    • A nonvolatile semiconductor memory device includes a memory cell array in which memory cells constituted by semiconductor storage elements are divided into a plurality of memory cell blocks each having a common source line and a common digit line, a peripheral circuit for addressing the memory cells and outputting data from the memory cells, a data detecting circuit for detecting, for each memory cell block, the presence/absence of a semiconductor storage element in which the threshold voltage of a transistor constituting the memory cell is the ground potential or less, and a source potential setting circuit capable of changing the source potential setting condition of each memory cell block in accordance with the detection result from the data detecting circuit.
    • 非易失性半导体存储器件包括存储单元阵列,其中由半导体存储元件构成的存储单元被划分为具有公共源极线和公共数字线的多个存储单元块,用于寻址存储单元并输出的外围电路 来自存储器单元的数据,用于每个存储单元块检测构成存储单元的晶体管的阈值电压为接地电位的半导体存储元件的存在/不存在的数据检测电路,以及源 电位设定电路能够根据来自数据检测电路的检测结果改变每个存储单元块的源极电位设定条件。