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1. 发明申请

US20120088125A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120088125A1
公开(公告)日：2012-04-12
申请号：US13236028
申请日：2011-09-19
申请人： Katsuya NISHIYAMA , Wu Feng , Chunlan Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
发明人： Katsuya NISHIYAMA , Wu Feng , Chunlan Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
IPC分类号： G11B5/66
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过通过第一磁性层，第一非磁性层和第二磁性层。

2. 发明授权

US08895162B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08895162B2
公开(公告)日：2014-11-25
申请号：US13236028
申请日：2011-09-19
申请人： Katsuya Nishiyama , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Chunlan Feng
发明人： Katsuya Nishiyama , Wu Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
IPC分类号： G01R33/09 , H01L43/08 , H01F10/32 , H01L43/10 , H01F10/193 , G11C11/16 , H01L27/22 , B82Y25/00 , H01F10/28
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过通过第一磁性层，第一非磁性层和第二磁性层。

3. 发明申请

US20050220902A1 Antihistamine composition 失效
公开(公告)号：US20050220902A1
公开(公告)日：2005-10-06
申请号：US11135809
申请日：2005-05-24
申请人： Wu Feng
发明人： Wu Feng
IPC分类号： A23L1/30 , A61K36/185 , A61K35/78 , A61K31/7048
CPC分类号： A61K36/185 , A23L33/105
摘要： An extraction process and composition produced thereby for use as an antihistamine is disclosed. The composition comprises an extraction of Loranthus, which is derived from a species of Loranthus known to possess quantities of quercetin and avicularin, which may be administered orally in an amount up to 300 mg per day, and preferably between 100 to 300 mg per day. The extraction process comprises forming an ethanol extraction from raw Loranthus, filtering the extract, and passing the filtered product through a separation column, eluting, distilling and concentrating the resultant extract and thereafter applying a vacuum to remove water and solvents to produce a concentrated powdered form of the extract.

4. 发明申请

US20050031500A1 Semiconductor waste gas processing device with flame path 审中-公开
标题翻译：具有火焰通道的半导体废气处理装置
公开(公告)号：US20050031500A1
公开(公告)日：2005-02-10
申请号：US10634697
申请日：2003-08-06
申请人： Wu Feng
发明人： Wu Feng
IPC分类号： B01D53/68 , B01D53/34 , B01D50/00
CPC分类号： B01D53/68 , B01D2258/0216
摘要： A semiconductor waste gas processing device comprises a flame path through a waste gas combustion chamber, a head section on a top of the waste gas combustion chamber, and a waste gases outlet. The flame path comprises at least one layer of fuel spray ring; each fuel spray ring having a respective fuel room formed in the head section and being connected to a fuel source line for supplying fuel gas; a secondary flame ring of each fuel spray ring having a plurality of secondary flame apertures; a tapered flame jet which is communicable with the waste gas combustion chamber being formed in a lower end of the flame path and an igniter being installed in the flame path.
摘要翻译：半导体废气处理装置包括通过废气燃烧室的火焰通道，废气燃烧室顶部的头部和废气出口。火焰通道包括至少一层燃料喷雾环; 每个燃料喷射环具有形成在头部部分中并且连接到用于供应燃料气体的燃料源线的相应燃料室; 每个燃料喷射环的二次火焰环具有多个二次火焰孔; 与废气燃烧室可连接的锥形火焰喷射器形成在火焰通道的下端，并且点火器安装在火焰通道中。

5. 发明授权

US07972180B2 Electrical connector 有权
标题翻译：电连接器
公开(公告)号：US07972180B2
公开(公告)日：2011-07-05
申请号：US12774201
申请日：2010-05-05
申请人： Yao Li , Wu Feng
发明人： Yao Li , Wu Feng
IPC分类号： H01R24/00
CPC分类号： H01R12/724 , H01R27/02
摘要： An electrical connector includes an insulating body having an accommodating base and at least one tongue plate extending forwardly from the accommodating base. The tongue plate has at least one accommodating space in communication with the accommodating base. Each accommodating space being provided with at least one stopper. At least one first conductive terminal and at least one second conductive terminal are received in the accommodating base. The second conductive terminal has a second connecting portion and a second contacting portion extending towards the accommodating space. The first conductive terminal is partially located below the second connecting portion, and has at least a portion extended under the stopper. The second connecting portion is located at a level higher than that of the stopper. This arrangement can prevent the first conductive terminal from contacting with the second conductive terminal, and a normal connection of the electrical connector is guaranteed.
摘要翻译：电连接器包括具有容纳基座和从容纳基座向前延伸的至少一个舌板的绝缘体。舌板具有至少一个与容纳基座连通的容置空间。每个容纳空间设置有至少一个止动件。至少一个第一导电端子和至少一个第二导电端子容纳在容纳基座中。第二导电端子具有朝向容纳空间延伸的第二连接部分和第二接触部分。第一导电端子部分地位于第二连接部分下方，并且具有在止动器下方延伸的至少一部分。第二连接部位于比止动件高的位置上。这种布置可以防止第一导电端子与第二导电端子接触，并且保证电连接器的正常连接。

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