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1. 发明授权

US08277560B2 CVD apparatus and method of cleaning the CVD apparatus 有权
标题翻译： CVD装置和清洁CVD装置的方法
公开(公告)号：US08277560B2
公开(公告)日：2012-10-02
申请号：US10492539
申请日：2003-03-19
申请人： Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
发明人： Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： C23C16/45593 , C23C16/4405 , C23C16/4412 , H01L21/02046 , Y02C20/30 , Y02P70/605
摘要： A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.
摘要翻译：一种CVD装置清洗方法，其在成膜步骤中有效地除去在反应室内附着和沉积在内壁，电极等的表面上的副产物如SiO 2或Si 3 N 4。在清洁方法中，排出的清洁气体量非常小，可以减少诸如全球变暖的环境影响，并且可以降低成本。将反应气体供应到反应室中并在设置在反应室中的基材的表面上形成沉积膜的CVD装置包括排气回收路径，从排气路径上的泵下游到达反应室的废气再循环用于从反应室的内部通过泵排出气体。

2. 发明申请

US20050252451A1 Cvd apparatus having means for cleaning with fluorine gas and method of cleaning cvd apparatus with fluorine gas 审中-公开
标题翻译：具有用氟气清洗的装置的Cvd装置以及用氟气清洗cvd装置的方法
公开(公告)号：US20050252451A1
公开(公告)日：2005-11-17
申请号：US10490217
申请日：2003-03-13
申请人： Tatsuro Beppu , Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
发明人： Tatsuro Beppu , Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
IPC分类号： B08B7/00 , C23C16/44 , H01J37/32 , H01L21/3065 , H01L21/31 , C23C16/00
CPC分类号： B08B7/0035 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y02C20/30 , Y02P70/605
摘要： It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined. After a film forming process for a base material is carried out by a CVD apparatus, a separated and refined fluorine gas is then converted to a plasma to remove a by-product adhered into the reaction chamber.
摘要翻译：本发明的目的是提供一种能够有效地除去SiO 2或Si 3 N 4 N 2的副产物的CVD装置中的清洗方法。 >，其在膜形成步骤中在反应室中粘附并沉积在内壁，电极等的表面上。此外，其目的在于提供一种清理方法，其中排出的清洁气体的量非常小，对全球变暖等环境的影响也减少，成本也降低。向氟化合物施加能量以使氟化合物反应，从而产生氟气成分和氟气成分以外的成分。此外，氟气成分和除了产生的氟气成分以外的成分彼此分离，使氟气成分分离精制。在通过CVD装置进行基材的成膜处理之后，将分离精制的氟气转化为等离子体，除去附着在反应室中的副产物。

3. 发明申请

US20060207630A1 Device for cleaning cvd device and method of cleaning cvd device 有权
标题翻译： cvd设备的清洁设备和清洁cvd设备的方法
公开(公告)号：US20060207630A1
公开(公告)日：2006-09-21
申请号：US10548874
申请日：2004-03-12
申请人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
发明人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
IPC分类号： B08B6/00 , B08B9/00 , C23F1/00 , B05C11/00 , C23C16/00
CPC分类号： C23C16/52 , C23C16/4405
摘要： An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.
摘要翻译：一种用于清洁可以有效地除去诸如SiO 2或Si 3 N 4 N 3的副产物的CVD装置的装置，其被粘附并沉积到在成膜工艺中的反应室中的内壁，电极等的表面，以及CVD装置的清洗方法。控制器通过光发射光谱监测反应室中F自由基的发光强度数据，并将该数据与校准的预存的发光强度数据进行比较，并且在经过预定时间从达到发光强度饱和点之后结束清洁。此外，通过傅里叶变换红外光谱法监测从反应室排出的气体中SiF 4的浓度数据，并与SiF 4的预先存储的浓度数据进行比较，以确定当达到预定的清洁终点浓度时已经过了预定的时间，从而结束清洁。

4. 发明授权

US08043438B2 Device for cleaning CVD device and method of cleaning CVD device 有权
标题翻译： CVD装置的清洗装置及清洗CVD装置的方法
公开(公告)号：US08043438B2
公开(公告)日：2011-10-25
申请号：US10548874
申请日：2004-03-12
申请人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
发明人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
IPC分类号： B08B9/00
CPC分类号： C23C16/52 , C23C16/4405
摘要： An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.
摘要翻译：一种用于清洁CVD装置的装置，其可以有效地除去在成膜过程中在反应室中粘附并沉积到反应室内的表面上的诸如SiO 2或Si 3 N 4的副产物，以及方法用于清洁CVD装置。控制器通过光发射光谱监测反应室中F自由基的发光强度数据，并将该数据与校准的预存的发光强度数据进行比较，并且在经过预定时间从达到发光强度饱和点之后结束清洁。此外，通过傅里叶变换红外光谱法监测从反应室排出的气体中SiF 4的浓度数据，并与SiF 4的预先存储的浓度数据进行比较，以确定在达到预定清洗终点浓度时经过了预定时间，从而结束清洁。

5. 发明授权

US07138364B2 Cleaning gas and etching gas 有权
标题翻译：清洁气体和蚀刻气体
公开(公告)号：US07138364B2
公开(公告)日：2006-11-21
申请号：US10480285
申请日：2003-01-28
申请人： Yutaka Ohira , Yuki Mitsui , Taisuke Yonemura , Akira Sekiya
发明人： Yutaka Ohira , Yuki Mitsui , Taisuke Yonemura , Akira Sekiya
IPC分类号： B08B9/00
CPC分类号： H01L21/02019 , B08B7/00 , C09K13/00 , C09K13/08 , C23C16/4405 , H01L21/02046 , H01L21/30604 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.
摘要翻译：根据本发明的用于含硅膜的室清洁气体和蚀刻气体包含与碳原子醚连接的具有2至4个碳原子的全氟环醚。室清洁气体和蚀刻气体几乎不产生诸如CF 4的有害废气，这是全球变暖的原因之一，因此它们对环境有好处。另外，它们是无毒气体或挥发性液体，易于使用，废气处理性优异。此外，本发明的室清洁气体具有优良的清洗率。

6. 发明授权

US07332628B2 Process for producing carbonyl fluoride 有权
标题翻译：生产碳酰氟的方法
公开(公告)号：US07332628B2
公开(公告)日：2008-02-19
申请号：US10548836
申请日：2004-03-12
申请人： Yuki Mitsui , Taisuke Yonemura , Yutaka Ohira , Akira Sekiya
发明人： Yuki Mitsui , Taisuke Yonemura , Yutaka Ohira , Akira Sekiya
IPC分类号： C07C51/58
CPC分类号： C01B32/80
摘要： The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.
摘要翻译：根据本发明的制备碳酰氟的方法是安全和容易地生产具有低四氟化碳含量的高纯度碳酰氟的方法，并且包括将一氧化碳和氟进料到反应器中并允许一氧化碳与氟反应反应器内部压力小于大气压的条件。

7. 发明授权

US07322368B2 Plasma cleaning gas and plasma cleaning method 有权
标题翻译：等离子清洗气体和等离子体清洗方法
公开(公告)号：US07322368B2
公开(公告)日：2008-01-29
申请号：US10415101
申请日：2002-08-26
申请人： Akira Sekiya , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura
发明人： Akira Sekiya , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura
IPC分类号： B08B9/093 , B08B9/00 , B08B6/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： C23C16/4405 , B08B7/0035 , H01L21/3065 , Y10S438/905
摘要： A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.
摘要翻译：用于CVD室的等离子体清洁气体是用于通过等离子体CVD装置在基板上进行成膜处理之后，清洁CVD室内壁表面上的含硅沉积物和置于CVD室内的构件表面的气体。清洁气体包括100体积％的氟气，气体可以通过放电产生等离子体。当通过放电等离子体产生100体积％的氟气，然后用作清洁气体时，即使在1000sccm的总气体流量下，也可以获得极好的蚀刻速率，并且甚至可以稳定地产生等离子体室压力为400Pa。此外，在上述条件下也可以确保清洁的均匀性。此外，氟气浓度为100％，使得该装置不复杂，因此清洁气体具有优异的实用性。

8. 发明申请

US20060194985A1 Process for producing carbonyl fluoride 有权
标题翻译：生产碳酰氟的方法
公开(公告)号：US20060194985A1
公开(公告)日：2006-08-31
申请号：US10548836
申请日：2004-03-12
申请人： Yuki Mitsui , Taisuke Yonemura , Yutaka Ohira , Akira Sekiya
发明人： Yuki Mitsui , Taisuke Yonemura , Yutaka Ohira , Akira Sekiya
IPC分类号： C07C51/58
CPC分类号： C01B32/80
摘要： The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.
摘要翻译：根据本发明的制备碳酰氟的方法是安全和容易地生产具有低四氟化碳含量的高纯度碳酰氟的方法，并且包括将一氧化碳和氟进料到反应器中并允许一氧化碳与氟反应反应器内部压力小于大气压的条件。

9. 发明授权

US06787053B2 Cleaning gases and etching gases 有权
标题翻译：清洁气体和蚀刻气体
公开(公告)号：US06787053B2
公开(公告)日：2004-09-07
申请号：US10129115
申请日：2002-05-13
申请人： Akira Sekiya , Yuki Mitsui , Ginjiro Tomizawa , Katsuya Fukae , Yutaka Ohira , Taisuke Yonemura
发明人： Akira Sekiya , Yuki Mitsui , Ginjiro Tomizawa , Katsuya Fukae , Yutaka Ohira , Taisuke Yonemura
IPC分类号： C03C1500
CPC分类号： C23C16/4405 , H01L21/3065 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.
摘要翻译：本发明的第一室清洁气体和第一含硅膜蚀刻气体包含至少一种选自FCOF，CF 3 OCOF和CF 3 OCF 2 COOF的化合物，以及特定量的O 2和任选的其它气体。第二室清洁气体和第二含硅膜蚀刻气体包含CF 3 COF，C 3 F 7 COF或CF 2（COF）2和特定量的O 2，并且任选地可以包含其它气体。本发明的室清洁气体和含硅膜蚀刻气体具有低的全球变暖潜能，并且几乎不产生对环境有害并被认为有助于全球变暖的CF4等废气中的物质。因此，气体对于全球环境友好，具有易于处理和优异的废气处理性能。此外，本发明的室清洁气体具有优异的清洗率。

10. 发明申请

US20130158304A1 METHOD FOR PRODUCING A FLUOROCOMPOUND 审中-公开
标题翻译：生产氟化物的方法
公开(公告)号：US20130158304A1
公开(公告)日：2013-06-20
申请号：US13704074
申请日：2011-06-13
申请人： Heng-dao Quan , Masanori Tamura , Junji Mizukado , Akira Sekiya
发明人： Heng-dao Quan , Masanori Tamura , Junji Mizukado , Akira Sekiya
IPC分类号： C07C17/354 , C07C17/358
CPC分类号： C07C17/354 , B01J21/04 , B01J21/18 , B01J23/44 , B01J23/644 , B01J23/66 , B01J27/12 , B01J27/13 , B01J35/0006 , B01J35/1014 , B01J37/0201 , B01J37/0205 , B01J37/0207 , B01J37/16 , B01J37/18 , C07C17/358 , C07C21/22 , C07C21/18
摘要： An object is to provide a method for producing 1,1,1,4,4,4-hexafluoro-2-butene with high efficiency, which is suitable for a flow reaction, and cis-1,1,1,4,4,4-hexafluoro-2-butene can be efficiently obtained when isomerization of hexafluoro-1,3-butadiene is conducted using a catalyst and the resultant mixture is successively subjected to catalytic hydrogenation to produce cis-1,1,1,4,4,4-hexafluoro-2-butene, wherein the whole process is performed by a flow catalytic reaction.
摘要翻译：目的在于提供一种高效制备1,1,1,4,4,4-六氟-2-丁烯的方法，适用于流动反应，顺式-1,1,1,4,4 当使用催化剂进行六氟-1,3-丁二烯的异构化时，可以有效地获得4-六氟-2-丁烯，所得混合物依次进行催化氢化，得到顺式-1,1,1,4,4 ，4-六氟-2-丁烯，其中整个过程通过流动催化反应进行。

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