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1. 发明授权

US5801355A Plasma piercing with non-oxidative plasma gas and plasma cutting with oxidative plasma gas 失效
标题翻译：等离子体穿透与氧化等离子体气体和等离子体切割与非氧化等离子体气体
公开(公告)号：US5801355A
公开(公告)日：1998-09-01
申请号：US750033
申请日：1996-11-25
申请人： Katsuo Saio , Masahiko Hasegawa
发明人： Katsuo Saio , Masahiko Hasegawa
IPC分类号： B23K10/00
CPC分类号： B23K10/00
摘要： The invention provides a method and an apparatus for plasma cutting which can produce a cut product having less dross, affixed thereto, and a clear cut surface, and which are capable of high-speed performance even at the time of the piercing operation. To this end, during the time of the piercing operation, an oxidative gas (O.sub.2) is used as the plasma gas, and at the time of the cutting operation a non-oxidative gas (N.sub.2) is used as the plasma gas to cut a workpiece (6). In addition, when shifting from the piercing operation to the cutting operation, the supplying of the non-oxidative gas (N.sub.2) can be started before the supplying of the oxidative gas (O.sub.2) is stopped.
摘要翻译： PCT No.PCT / JP95 / 00979 Sec。 371日期：1996年11月25日 102（e）日期1996年11月25日PCT提交1995年5月23日PCT公布。公开号WO95 / 32072 日期：1995年11月30日本发明提供了一种等离子体切割的方法和装置，其可以产生具有较少浮渣，固定在其上的切割产品和清晰的切割表面，并且即使在穿刺操作。为此，在穿刺时，使用氧化性气体（O 2）作为等离子体气体，在切断动作时使用非氧化性气体（N 2）作为等离子气体切断工件（6）。此外，当从穿刺操作转移到切割操作时，可以在停止供应氧化气体（O2）之前开始供给非氧化性气体（N2）。

2. 外观设计

USD692471S1 Electrode for a plasma torch 有权
标题翻译：电极用于等离子体焰炬
公开(公告)号：USD692471S1
公开(公告)日：2013-10-29
申请号：US29401582
申请日：2011-09-13
申请人： Mikio Minonishi , Katsuo Saio , Kazunori Tsunekawa , Shigeo Morimoto , Yoshihiro Yamaguchi
设计人： Mikio Minonishi , Katsuo Saio , Kazunori Tsunekawa , Shigeo Morimoto , Yoshihiro Yamaguchi

3. 发明授权

US5900168A Plasma cutting method 失效
标题翻译：等离子切割方法
公开(公告)号：US5900168A
公开(公告)日：1999-05-04
申请号：US894062
申请日：1997-08-12
申请人： Katsuo Saio , Yoshihiro Yamaguchi
发明人： Katsuo Saio , Yoshihiro Yamaguchi
IPC分类号： B23K10/00 , H05H1/34
CPC分类号： H05H1/3405 , H05H2001/3436 , H05H2001/3494
摘要： A plasma cutting method for use in a plasma cutting apparatus having a nozzle with an orifice in which a plasma arc is pinched and thereby narrowed and densified and a flushing secondary gas for surrounding a forward end portion of the nozzle. Also, a non-oxidizing gas is caused to flow as a plasma gas to start the arc and a non-oxidizing gas is caused to flow as the secondary gas to start the arc so that a non-oxidizing gaseous atmosphere may prevail in the vicinity of an outlet of the above mentioned nozzle.
摘要翻译： PCT No.PCT / JP96 / 00304 Sec。 371日期：1997年8月12日 102（e）日期1997年8月12日PCT 1996年2月13日PCT PCT。公开号WO96 / 25265 日本1982年8月22日等离子切割方法，其用于具有喷嘴的等离子体切割装置，其具有挤压等离子体电弧并因此变窄和致密化的孔口，以及用于包围喷嘴的前端部分的冲洗二次气体。此外，使非氧化性气体作为等离子体气体流动以开始电弧，并且使非氧化性气体作为二次气体流动以开始电弧，使得在附近可能存在非氧化性气体气氛的上述喷嘴的出口。

4. 发明授权

US07495542B2 Film temperature sensor and temperature sensing substrate 失效
标题翻译：薄膜温度传感器和温度传感基板
公开(公告)号：US07495542B2
公开(公告)日：2009-02-24
申请号：US11202374
申请日：2005-08-12
申请人： Katsuo Saio , Akihiro Ohsawa
发明人： Katsuo Saio , Akihiro Ohsawa
IPC分类号： H01C1/012
CPC分类号： G01K7/00 , G01K1/026
摘要： A film-like temperature sensor for more accurately measuring the temperatures at plural locations on the surface of a semiconductor wafer comprises a base film made of an insulating material; plural thin-film thermal elements for sensing temperature; plural thin-film leads, connected to the thermal elements; and plural thin-film terminals connected to the ends of the leads. The thermal elements, leads, and terminals are integrally formed either on the surface or in the thickness of the base film. The base film has a flat shape like a paddle, and comprises a head portion to be attached to the surface of a semiconductor wafer, and a strip-shaped tail portion extending outwardly of the semiconductor wafer. The plural thermal elements are arranged on the head portion in the form of either a concentric circle, spiral, matrix, or raster, and the plural terminals are arranged on the tail portion.
摘要翻译：用于更准确地测量半导体晶片表面上的多个位置处的温度的膜状温度传感器包括由绝缘材料制成的基膜; 用于感测温度的多个薄膜热元件; 多个薄膜引线，连接到热元件; 以及连接到引线端部的多个薄膜端子。热元件，引线和端子一体地形成在基膜的表面或厚度上。基膜具有像桨状物的扁平形状，并且包括要附着到半导体晶片的表面的头部和从半导体晶片向外延伸的带状尾部。多个热元件以同心圆，螺旋，矩阵或光栅的形式布置在头部上，并且多个端子布置在尾部上。

5. 发明授权

US08399811B2 Stage for substrate temperature control apparatus 有权
标题翻译：基板温度控制装置的阶段
公开(公告)号：US08399811B2
公开(公告)日：2013-03-19
申请号：US12596755
申请日：2008-03-28
申请人： Kenichi Bandoh , Katsuo Saio , Kazuhiko Kubota
发明人： Kenichi Bandoh , Katsuo Saio , Kazuhiko Kubota
IPC分类号： H05B3/68
CPC分类号： H01L21/67103
摘要： A stage for a substrate temperature control apparatus having high reliability at low cost by preventing thermal deformation of a plate while employing a material other than ceramics as a material of the plate. The stage is used for mounting a substrate in the substrate temperature control apparatus for controlling a temperature of the substrate, and the stage includes: a plate having a first surface facing the substrate and a second surface opposite to the first surface; and a planar heater bonded to the second surface of the plate, wherein surface treatment is performed in a first thickness on the first surface of the plate, and the surface treatment is performed in a second thickness thinner than the first thickness or no surface treatment is performed on a predetermined area of the second surface of the plate.
摘要翻译：通过在采用陶瓷以外的材料作为板的材料的同时防止板的热变形，以低成本具有高可靠性的基板温度控制装置的阶段。该台用于将基板安装在用于控制基板的温度的基板温度控制装置中，并且该台包括：具有面向基板的第一表面和与第一表面相对的第二表面的板; 以及结合到所述板的第二表面的平面加热器，其中在所述板的第一表面上以第一厚度进行表面处理，并且所述表面处理以比所述第一厚度更薄的第二厚度进行或者不进行表面处理在板的第二表面的预定区域上执行。

6. 发明申请

US20100133256A1 STAGE FOR SUBSTRATE TEMPERATURE CONTROL APPARATUS 有权
标题翻译：基板温度控制装置的阶段
公开(公告)号：US20100133256A1
公开(公告)日：2010-06-03
申请号：US12596755
申请日：2008-03-28
申请人： Kenichi Bandoh , Katsuo Saio , Kazuhiko Kubota
发明人： Kenichi Bandoh , Katsuo Saio , Kazuhiko Kubota
IPC分类号： H05B1/02 , H05B3/68 , H05B3/16
CPC分类号： H01L21/67103
摘要： A stage for a substrate temperature control apparatus having high responsibility at low cost by preventing thermal deformation of a plate while employing a material other than ceramics as a material of the plate. The stage for a substrate temperature control apparatus is a stage to be used for mounting a substrate in the substrate temperature control apparatus for controlling a temperature of the substrate, and the stage includes: a plate having a first surface facing the substrate and a second surface opposite to the first surface; and a planar heater bonded to the second surface of the plate, wherein surface treatment is performed in a first thickness on the first surface of the plate, and the surface treatment is performed in a second thickness thinner than the first thickness or no surface treatment is performed on a predetermined area of the second surface of the plate.
摘要翻译：通过在采用陶瓷以外的材料作为板的材料的同时防止板的热变形，以低成本承担高负责的基板温度控制装置的阶段。基板温度控制装置的平台是用于将基板安装在用于控制基板的温度的基板温度控制装置中的阶段，并且台架包括：板，其具有面向基板的第一表面和第二表面与第一表面相对; 以及结合到所述板的第二表面的平面加热器，其中在所述板的第一表面上以第一厚度进行表面处理，并且所述表面处理以比所述第一厚度更薄的第二厚度进行或者不进行表面处理在板的第二表面的预定区域上执行。

7. 发明申请

US20060034346A1 Film temperature sensor and temperature sensing substrate 失效
公开(公告)号：US20060034346A1
公开(公告)日：2006-02-16
申请号：US11202374
申请日：2005-08-12
申请人： Katsuo Saio , Akihiro Ohsawa
发明人： Katsuo Saio , Akihiro Ohsawa
IPC分类号： G01K7/00
CPC分类号： G01K7/00 , G01K1/026
摘要： A film-like temperature sensor for more accurately measuring the temperatures at plural locations on the surface of a semiconductor wafer comprises a base film made of an insulating material; plural thin-film thermal elements for sensing temperature; plural thin-film leads, connected to the thermal elements; and plural thin-film terminals connected to the ends of the leads. The thermal elements, leads, and terminals are integrally formed either on the surface or in the thickness of the base film. The base film has a flat shape like a paddle, and comprises a head portion to be attached to the surface of a semiconductor wafer, and a strip-shaped tail portion extending outwardly of the semiconductor wafer. The plural thermal elements are arranged on the head portion in the form of either a concentric circle, spiral, matrix, or raster, and the plural terminals are arranged on the tail portion.

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