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    • 1. 发明授权
    • Substrate temperature control plate and substrate temperature control apparatus comprising same
    • 基板温度控制板及其基板温度控制装置
    • US06626236B1
    • 2003-09-30
    • US09531684
    • 2000-03-20
    • Kenichi BandohAkihiro OhsawaMikio Minonishi
    • Kenichi BandohAkihiro OhsawaMikio Minonishi
    • F24F300
    • H01L21/67248
    • Object of the present invention is to provide uniform heat distribution to a substrate undergoing heat treatment on top of a heat exchange plate. A heat exchange plate 1 is a flat, circular receptacle, has a cooling liquid inflow opening 11 on one end and outflow opening 13 on the other end, and cooling liquid flows on the inside. The surface of the plate 1 is divided, for example, into four zones having different heat capacities and heat transfer characteristics, and an independently controllable foil heater 21A, 23A, 25A, 27A is attached to each zone. Heater 21A covers a zone, which circumferentially surrounds a substrate placed on top of a plate, heater 23A covers a zone directly beneath a substrate, heater 25A covers a zone of the vicinity of the outflow opening 13, and heater 27A covers a zone of the vicinity of the inflow opening 11. Temperature sensors 31-33 are disposed on the inside of a plate at four locations of a second zone, which are apt to receive the affects of the first to fourth zones. Based on each plate temperature detected by the temperature sensors 31 to 33, a temperature of the substrate at a location corresponding thereto is estimated.
    • 本发明的目的是提供对热交换板顶部经受热处理的基板的均匀的热分布。 热交换板1是平坦的圆形容器,一端具有冷却液流入口11,另一端具有流出口13,冷却液在内部流动。 板1的表面例如被分成具有不同热容和传热特性的四个区域,并且独立可控的箔加热器21A,23A,25A,27A附接到每个区域。 加热器21A覆盖周边围绕放置在板顶部的基板的区域,加热器23A覆盖基底正下方的区域,加热器25A覆盖流出开口13附近的区域,加热器27A覆盖 温度传感器31-33在第二区域的四个位置处设置在板的内部,其容易受到第一至第四区域的影响。 基于由温度传感器31至33检测到的每个板温度,估计与其对应的位置处的基板的温度。
    • 2. 发明申请
    • Wafer temperature measuring method and apparatus
    • 晶圆温度测量方法和装置
    • US20070009010A1
    • 2007-01-11
    • US11472463
    • 2006-06-22
    • Koji ShioHideyuki WakaiAkihiro OhsawaHironori Akiba
    • Koji ShioHideyuki WakaiAkihiro OhsawaHironori Akiba
    • G01K11/00
    • G01K11/125
    • A non-contact wafer temperature measuring apparatus by which a wafer temperature can be measured with accuracy in situ even in a low temperature process. The wafer temperature measuring apparatus for measuring a wafer temperature based on reflected light of light applied to a wafer as a target of temperature measurement includes: a light source unit for generating light containing a P-polarized component having a wavelength not larger than 400 nm and applying the light to the wafer; a light receiving unit for receiving the light reflected by the wafer and detecting at least intensity of the P-polarized component having the wavelength not larger than 400 nm; and a signal processing unit for calculating a temperature of the target of temperature measurement at least based on the intensity of the P-polarized component having the wavelength not larger than 400 nm detected by the light receiving unit.
    • 非接触式晶片温度测量装置,即使在低温工艺中也可以准确地测量晶片温度。 用于测量基于作为温度测量对象的晶片的光的反射光的晶片温度测量装置包括:用于产生包含波长不大于400nm的P偏振分量的光的光源单元和 将光施加到晶片; 光接收单元,用于接收由晶片反射的光并至少检测波长不大于400nm的P偏振分量的至少强度; 以及信号处理单元,用于至少基于由光接收单元检测到的具有不大于400nm的波长的P偏振分量的强度来计算温度测量目标温度。
    • 3. 发明授权
    • Film temperature sensor and temperature sensing substrate
    • 薄膜温度传感器和温度传感基板
    • US07495542B2
    • 2009-02-24
    • US11202374
    • 2005-08-12
    • Katsuo SaioAkihiro Ohsawa
    • Katsuo SaioAkihiro Ohsawa
    • H01C1/012
    • G01K7/00G01K1/026
    • A film-like temperature sensor for more accurately measuring the temperatures at plural locations on the surface of a semiconductor wafer comprises a base film made of an insulating material; plural thin-film thermal elements for sensing temperature; plural thin-film leads, connected to the thermal elements; and plural thin-film terminals connected to the ends of the leads. The thermal elements, leads, and terminals are integrally formed either on the surface or in the thickness of the base film. The base film has a flat shape like a paddle, and comprises a head portion to be attached to the surface of a semiconductor wafer, and a strip-shaped tail portion extending outwardly of the semiconductor wafer. The plural thermal elements are arranged on the head portion in the form of either a concentric circle, spiral, matrix, or raster, and the plural terminals are arranged on the tail portion.
    • 用于更准确地测量半导体晶片表面上的多个位置处的温度的膜状温度传感器包括由绝缘材料制成的基膜; 用于感测温度的多个薄膜热元件; 多个薄膜引线,连接到热元件; 以及连接到引线端部的多个薄膜端子。 热元件,引线和端子一体地形成在基膜的表面或厚度上。 基膜具有像桨状物的扁平形状,并且包括要附着到半导体晶片的表面的头部和从半导体晶片向外延伸的带状尾部。 多个热元件以同心圆,螺旋,矩阵或光栅的形式布置在头部上,并且多个端子布置在尾部上。