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1. 发明授权

US4321538A Nuclear gyromagnetic resonance apparatus 失效
标题翻译：核磁共振装置
公开(公告)号：US4321538A
公开(公告)日：1982-03-23
申请号：US69057
申请日：1979-08-23
申请人： Katsunobu Abe , Satoru Kimura , Norimasa Kamezawa
发明人： Katsunobu Abe , Satoru Kimura , Norimasa Kamezawa
IPC分类号： G01N22/00 , G01R33/30 , G01R33/44 , G01R33/46 , G01N27/00
CPC分类号： G01R33/30 , G01N22/00 , G01R33/44 , G01R33/46
摘要： A sample placed in a magnetic field is irradiated with a high frequency wave. The sample is rapidly rotated by a predetermined angle. Throughout the process in which the molecular orientation of the sample returns to the original state subsequently, a nuclear gyromagnetic resonance spectrum obtained from the sample can be observed.
摘要翻译：放置在磁场中的样品用高频波照射。样品快速旋转预定角度。在其中样品的分子取向随后返回到原始状态的整个过程中，可以观察到从样品获得的核回旋共振谱。

2. 发明授权

US4543465A Microwave plasma source having improved switching operation from plasma ignition phase to normal ion extraction phase 失效
标题翻译：微波等离子体源具有从等离子体点火阶段到正常离子提取阶段的改进的开关操作
公开(公告)号：US4543465A
公开(公告)日：1985-09-24
申请号：US517404
申请日：1983-07-26
申请人： Noriyuki Sakudo , Katsunobu Abe , Katsumi Tokiguchi , Hidemi Koike , Osami Okada
发明人： Noriyuki Sakudo , Katsunobu Abe , Katsumi Tokiguchi , Hidemi Koike , Osami Okada
IPC分类号： H01J27/16 , B23K10/00 , C23F4/00 , H01J37/08 , H01L21/302 , H01L21/3065 , B23K9/00 , H01J27/00
CPC分类号： B23K10/006
摘要： In a microwave plasma source, a discharge space supplied with a microwave electric field is supplied with a DC magnetic field. A material to be ionized is introduced into the discharge space to produce plasma, whereby ions are extracted through an ion extracting system. A switch is provided for effecting through switching operation the change-over of the magnetic field applied to the discharge space from the intensity for the ignition of plasma to the intensity for ion extraction in succession to completion of the plasma ignition.
摘要翻译：在微波等离子体源中，向微波电场供给的放电空间被供给直流磁场。将被离子化的材料引入放电空间以产生等离子体，从而通过离子提取系统提取离子。提供了一种开关，用于通过切换操作，将施加到放电空间的磁场的转换从等离子体的点火强度切换到等离子体点火完成之后的离子提取强度。

3. 发明授权

US4839523A Ion implantation apparatus for semiconductor manufacture 失效
标题翻译：用于半导体制造的离子注入装置
公开(公告)号：US4839523A
公开(公告)日：1989-06-13
申请号：US588981
申请日：1984-03-13
申请人： Shunroku Taya , Katsunobu Abe , Atsushi Shibata
发明人： Shunroku Taya , Katsunobu Abe , Atsushi Shibata
IPC分类号： C30B31/22 , H01J37/05 , H01J37/317 , H01L21/265
CPC分类号： C30B31/22 , H01J37/05 , H01J37/317 , H01J37/3171
摘要： An ion implantation apparatus which is suited for manufacturing semiconductor devices and which is particularly suited for implanting double charged ions into the wafers 22. Ions of a predetermined mass only are selected by a mass-separating electromagnet 14 from an ion beam 12 that is emitted from an ion source 10, and are implanted into the wafer 22 via a slit 16. Between the slit 16 and the mass-separating electromagnet, there are provided field electrodes 24 having a direction of deflection which is the same as that of the mass-separating electromagnet 14 to separate ions having different energy levels, and deflection magnets 26 having a direction of deflection at right angles with the direction of deflection of the mass-separating electromagnet. The slit 16 is arranged so that undeflected neutral particles and low energy ions deflected by the field electrodes 24 will pass through the slit while high energy ions will be deflected the proper amount to pass through the slit. Correction means 32 can be located between the slit and the wafer to ensure that the beam passing through the slit strikes the wafer at the proper angle.
摘要翻译：一种适用于制造半导体器件的离子注入装置，其特别适于将双电荷离子注入到晶片22中。仅通过质量分离电磁体14从离子束12中选出一个预定质量的离子，离子束12从离子源10，并且经由狭缝16注入晶片22中。在狭缝16和质量分离电磁体之间，提供具有与质量分离的偏转方向相同的偏转方向的场电极24 用于分离具有不同能级的离子的电磁体14以及具有与质量分离电磁体的偏转方向成直角的偏转方向的偏转磁体26。狭缝16布置成使得由场电极24偏转的未偏转的中性粒子和低能离子将穿过狭缝，同时高能离子将被偏转适当的量以通过狭缝。校正装置32可以位于狭缝和晶片之间，以确保通过狭缝的光束以适当的角度撞击晶片。

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