专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06746722B2 Fluorine-containing phenylmaleimide derivative, polymer, chemically amplified resist composition, and method for pattern formation using the composition 失效
标题翻译：含氟苯基马来酰亚胺衍生物，聚合物，化学放大抗蚀剂组合物，以及使用该组合物的图案形成方法
公开(公告)号：US06746722B2
公开(公告)日：2004-06-08
申请号：US10198958
申请日：2002-07-22
申请人： Katsumi Maeda , Kaichiro Nakano
发明人： Katsumi Maeda , Kaichiro Nakano
IPC分类号： C08J704
CPC分类号： C08F222/22 , C08F222/18 , Y10S522/914
摘要： A fluorine-containing phenylmaleimide derivative having a specific structure. A polymer obtained by polymerizing monomers containing the derivative. A polymer containing a specific structural unit and having a weight-average molecular weight of 2,000 to 200,000. A chemically amplified resist composition containing the polymer and a photo acid generator, wherein the proportion of the polymer relative to the total of the polymer and the photo acid generator is 70 to 99.8% by mass. A method for pattern formation, which comprises coating the above composition on a to-be-processed substrate, exposing with a light of 180 nm or less wavelength, and conducting baking and development.
摘要翻译：具有特定结构的含氟苯基马来酰亚胺衍生物。通过聚合含有该衍生物的单体获得的聚合物。含有特定结构单元且重均分子量为2,000〜200,000的聚合物。一种含有聚合物和光酸发生剂的化学放大抗蚀剂组合物，其中聚合物相对于聚合物和光酸产生剂的总量的比例为70〜99.8质量％。一种图案形成方法，其包括将上述组合物涂布在待处理衬底上，用180nm或更小波长的光进行曝光，并进行烘烤和显影。

2. 发明授权

US06710188B2 Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer 失效
标题翻译：化学放大抗蚀剂，化学放大抗蚀剂聚合物，聚合物单体和将图案转移到化学增强抗蚀剂层的方法
公开(公告)号：US06710188B2
公开(公告)日：2004-03-23
申请号：US10463571
申请日：2003-06-18
申请人： Katsumi Maeda , Kaichiro Nakano
发明人： Katsumi Maeda , Kaichiro Nakano
IPC分类号： C07D31304
CPC分类号： G03F7/0395 , C07D309/30 , C08F20/30 , C08F34/02 , G03F7/0397
摘要： Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]octane-2-yl group expressed by general formula (1) where each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L5 and L6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.
摘要翻译：基于由通式（1）表示的3-氧代-4-氧杂双环[3.2.1]辛烷-2-基的乙烯基聚合物制备化学扩增抗蚀剂，其中L 1，L 2， L 3，L 4，L 5和L 6选自氢原子和碳原子数1〜8的烷基，氢原子和/或烷基在L 5和L 6被碳原子数为1〜10的亚烷基取代，并且彼此键合形成环，使得抗蚀剂对波长等于或小于220nm的光具有高透明度，抗干蚀刻性能好，对基片粘合性好。

3. 发明授权

US06352813B2 Photosensitive resin composition and patterning method using the same 失效
标题翻译：感光树脂组合物和使用其的图案化方法
公开(公告)号：US06352813B2
公开(公告)日：2002-03-05
申请号：US09102916
申请日：1998-06-23
申请人： Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
发明人： Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
IPC分类号： G03F7032
CPC分类号： G03F7/0382
摘要： A photosensitive resin composition in accordance with the present invention has (a) a polymer having repetition units expressed by a general formula (1): wherein R1, R3, and R5 each represents a hydrogen atom or a methyl group, R2 represents a bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 22 inclusive, R4 represents a hydrocarbon group including an epoxy group, x+y+z=1, wherein 0
摘要翻译：本发明的感光性树脂组合物具有（a）具有由通式（1）表示的重复单元的聚合物：其中R1，R3和R5各自表示氢原子或甲基，R2表示桥连环状碳数为7〜22的烃基，R4表示包含环氧基的烃基，x + y + z = 1，其中0

4. 发明授权

US6140010A Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same 有权
标题翻译：用于短波长光束的负型光致抗蚀剂组合物及其形成方法
公开(公告)号：US6140010A
公开(公告)日：2000-10-31
申请号：US140650
申请日：1998-08-26
申请人： Shigeyuki Iwasa , Katsumi Maeda , Kaichiro Nakano , Etsuo Hasegawa
发明人： Shigeyuki Iwasa , Katsumi Maeda , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： G03F7/004 , G03F7/033 , G03F7/038 , H01L21/027
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative type photoresist composition includes a polymer which contains a repetition unit which is expressed by a general chemical formula (1) and has a weight average molecule weight in a range of 1000 to 500000, a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The general chemical formula (1) is as follows, ##STR1## where in the general chemical formula (1), R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group. Also, the general chemical formula (2) is as follows, ##STR2## In the general chemical formula (2), X is a group expressed by a general chemical formula (3), a hydrogen atom, a hydrocarbon group containing carbon atoms in a range of 1 to 6, an alkoxy group containing carbon atoms in a range of 1 to 3, or a hydroxyl group, a1, a2 and a3 are 1 or 2, respectively, b1, b2 and b3 are 0 or 1, respectively, and a1+b1=2, a2+b2=2, and a3+b3=2, and R.sup.8 is a hydrogen atom, or an alkyl group containing carbon atoms in a range of 1 to 6. ##STR3##
摘要翻译：负型光致抗蚀剂组合物包括含有由通式（1）表示的重复单元，重均分子量为1000〜500000的聚合物，由含有官能团的化合物构成的交联剂其由一般化学式（2）表示，光生酸剂响应于光而产生酸。一般化学式（1）如下，其中在通式（1）中，R 1为氢原子或甲基，R 2为碳原子数为7〜18的亚烷基，桥连环状烃基。另外，通式（2）中，通式（2）中，X为通式（3）表示的基团，氢原子，碳原子数为 1〜6中，碳原子数1〜3的烷氧基或羟基a1，a2，a3分别为1或2，b1，b2和b3分别为0或1，a1 + b1 = 2，a2 + b2 = 2，a3 + b3 = 2，R8为氢原子或碳原子数为1〜6的烷基。

5. 发明授权

US6106998A Negative resist materials, pattern formation method making use thereof, and method of manufacturing semiconductor devices 失效
标题翻译：使用负电阻材料，图案形成方法以及制造半导体器件的方法
公开(公告)号：US6106998A
公开(公告)日：2000-08-22
申请号：US94021
申请日：1998-06-09
申请人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative resist material suitable for lithography employing for exposure a beam having a wavelength of 220 nm or less. The negative resist material contains a polymer having a weight average molecular weight of 1,000-500,000 and represented by the following formula (1): ##STR1## wherein R.sup.1, R.sup.3, and R.sup.5 are hydrogen atoms or methyl groups; R.sup.2 is a specified divalent hydrocarbon group; R.sup.4 is a hydrocarbon group having an epoxy group; R.sup.6 is a hydrogen atom or a C.sub.1-12 hydrocarbon group; and each of x, y, and z represents an arbitrary number satisfying certain relations; a photoacid generator generating an acid through exposure; and optionally a polyhydric alcohol or a polyfunctional epoxy group. The present invention also discloses a pattern formation method, and a method of manufacturing semiconductor devices using the pattern formation method.
摘要翻译：适合用于曝光波长为220nm以下的光束的负光刻胶材料。负抗蚀剂材料含有重均分子量为1,000〜500,000的聚合物，由下式（1）表示：其中R1，R3和R5是氢原子或甲基; R2是指定的二价烃基; R4是具有环氧基的烃基; R6是氢原子或C1-12烃基; 并且x，y和z分别表示满足一定关系的任意数; 通过曝光产生酸的光酸发生剂; 和任选的多元醇或多官能环氧基。本发明还公开了一种图案形成方法以及使用图案形成方法制造半导体器件的方法。

6. 发明授权

US5585507A Alkylsulfonium salts and photoresist compositions containing the same 失效
标题翻译：烷基锍盐和含有它们的光致抗蚀剂组合物
公开(公告)号：US5585507A
公开(公告)日：1996-12-17
申请号：US478969
申请日：1995-06-07
申请人： Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
发明人： Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
IPC分类号： C07C381/12 , G03F7/004 , C07F5/02 , C07F9/66 , C07F9/90
CPC分类号： G03F7/0045 , C07C381/12 , C07C2101/08 , C07C2101/14 , C07C2103/74 , Y10S430/111 , Y10S430/122
摘要： A photoresist composition containing an alkylsulfonium salt compound represented by the following general formula (I): ##STR1## Wherein R.sup.1 and R.sup.2 may be the same or different, each being a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, R.sup.3 is a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, a C.sub.5 to C.sub.7 2-oxocycloalkyl radical, or a linear or branched C.sub.3 to C.sub.8 2-oxoalkyl radical, and Y.sup.- represents a counter ion. The photoresist composition has high transparency to deep U.V. light having wavelengths of 220 nm or less and is capable of forming good fine patterns with high sensitivity, thus being useful as chemically amplified type resist which is exposed to the deep U.V. light from an ArF excimer laser.
摘要翻译：含有由以下通式（I）表示的烷基锍盐化合物的光致抗蚀剂组合物：其中R1和R2可以相同或不同，各自为直链，支链或环状的C1至C8烷基，R3 是直链，支链或环状的C1至C8烷基，C5至C72-氧代环烷基，或直链或支链C3至C82-氧代烷基，Y-表示抗衡离子。光致抗蚀剂组合物对深紫外线具有高透明度。具有220nm或更小波长的光并能够形成具有高灵敏度的良好精细图案，因此可用作暴露于深紫外线的化学放大型抗蚀剂。来自ArF准分子激光的光。

7. 发明授权

US07470499B2 Alicyclic unsaturated compound, polymer, chemically amplified resist composition and method for forming pattern using said composition 失效
标题翻译：脂环族不饱和化合物，聚合物，化学增幅抗蚀剂组合物和使用所述组合物形成图案的方法
公开(公告)号：US07470499B2
公开(公告)日：2008-12-30
申请号：US10548067
申请日：2004-03-04
申请人： Katsumi Maeda , Kaichiro Nakano
发明人： Katsumi Maeda , Kaichiro Nakano
IPC分类号： G03F7/039 , G08F32/08 , C07C35/52 , C07C69/65 , C07C43/178
CPC分类号： C07C35/52 , C07C2603/66 , G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： A noble alicyclic unsaturated compound represented by the general formula (1): wherein at least one of R1 and R2 is a fluorine atom or a fluorinated alkyl group; a polymer formed by the polymerization of a polymer precursor comprising the alicyclic compound. The polymer is useful, in the lithography using a light having a wavelength of 190 nm or less, as a chemically amplified resist which exhibits excellent transparency with respect to the light for use in exposure and also is excellent in the adhesion to a substrate and the resistance to dry etching.
摘要翻译：由通式（1）表示的高级脂环族不饱和化合物：其中R 1和R 2中的至少一个为氟原子或氟代烷基; 通过包含脂环族化合物的聚合物前体的聚合形成的聚合物。聚合物在使用波长为190nm以下的光的光刻中作为化学放大型抗蚀剂是有用的，该抗蚀剂相对于曝光用光具有优异的透明性，并且对基材的粘附性也优异，耐干蚀刻。

8. 发明授权

US07192682B2 Unsaturated monomers, polymers, chemically-amplified resist composition, and process of pattern formation 失效
标题翻译：不饱和单体，聚合物，化学增幅抗蚀剂组合物和图案形成工艺
公开(公告)号：US07192682B2
公开(公告)日：2007-03-20
申请号：US10497302
申请日：2003-06-27
申请人： Katsumi Maeda , Kaichiro Nakano
发明人： Katsumi Maeda , Kaichiro Nakano
IPC分类号： G03F7/039 , G03F7/30 , G03F7/38 , C08F10/00 , C08F136/00
CPC分类号： G03F7/0395 , C07D307/92 , C07D307/93 , C08G61/125 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a chemically-amplified resist composition having high transparency to light having a wavelength of 220 nanometers or smaller, excellent resistance to etching, and excellent adhesion to a substrate. The chemically-amplified resist composition is prepared through the use of at least one of a repeated structural unit having a bridged alicyclic γ-lactone structure defined in the general formula (III), a repeated structural unit having a bridged alicyclic γ-lactone structure defined in the general formula (IV), and a repeated structural unit having a bridged alicyclic γ-lactone structure defined in the general formula (V).
摘要翻译：提供了具有波长为220纳米或更小的光的高透明度的化学放大抗蚀剂组合物，优异的抗蚀刻性和对基底的优异粘附性。通过使用具有通式（III）中定义的桥连脂环族γ-内酯结构的重复结构单元，具有定义的桥连脂环族γ-内酯结构的重复结构单元中的至少一种来制备化学放大抗蚀剂组合物和通式（Ⅴ）中定义的具有桥连的脂环族γ-内酯结构的重复结构单元。

9. 发明授权

US06924079B2 Resist resin, chemical amplification type resist, and method of forming of pattern with the same 失效
标题翻译：抗蚀树脂，化学放大型抗蚀剂，以及与其形成图案的方法
公开(公告)号：US06924079B2
公开(公告)日：2005-08-02
申请号：US10240404
申请日：2001-07-02
申请人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： C08F34/02 , C08F220/10 , C08F222/06 , C08G61/06 , C08G61/08 , C08G61/12 , G03F7/039 , H01L21/027 , H01L21/312
CPC分类号： G03F7/0392 , C08G61/06 , C08G61/08 , C08G61/12 , C08G61/125 , G03F7/0395 , G03F7/0397 , H01L21/312 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a resist resin having an acid-decomposable group, which gives rise to decomposition of the acid-decomposable group to show an increased solubility to an aqueous alkali solution by the action of an acid, wherein the resist resin has, in the main chain, an alicyclic lactone structure represented by the following general formula (1). According to the present invention, a positive-type chemically amplified resist can be obtained which has high transparency to a far-ultraviolet light having a wavelength of about 220 nm or less, excellent etching resistance, and excellent adhesion to substrate; and a fine pattern required in production of semiconductor device can be formed. (wherein Z is an alicyclic hydrocarbon group having a lactone structure).
摘要翻译：本发明涉及具有酸分解性基团的抗蚀剂树脂，该抗蚀剂树脂引起酸分解基团的分解，以通过酸的作用使碱溶液的溶解度增加，其中抗蚀剂树脂具有主链，由以下通式（1）表示的脂环族内酯结构。根据本发明，可以获得对具有约220nm或更小的波长的远紫外光具有高透明度，优异的耐蚀刻性和对基底的优异粘附性的正型化学放大抗蚀剂; 并且可以形成半导体器件的制造所需的精细图案。（其中Z为具有内酯结构的脂环族烃基）。

10. 发明申请

US20050164119A1 Monomer having fluorine-containing acetalor ketal structure, polymer thereof, and chemical-amplification-type resist composition as well as process for formation of pattern with use of the same 失效
标题翻译：具有含氟缩醛缩酮结构的单体，其聚合物和化学放大型抗蚀剂组合物以及使用它们形成图案的方法
公开(公告)号：US20050164119A1
公开(公告)日：2005-07-28
申请号：US10505799
申请日：2003-02-25
申请人： Katsumi Maeda , Kaichiro Nakano
发明人： Katsumi Maeda , Kaichiro Nakano
IPC分类号： C07C43/313 , C07C43/317 , C07C69/00 , C07C69/653 , C07C69/753 , G03C1/76 , G03F7/004 , G03F7/039
CPC分类号： C07C43/317 , C07C43/313 , C07C69/653 , C07C69/753 , C07C2602/42 , C07C2603/62 , C07C2603/74 , C07C2603/86 , G03F7/0046 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： As a polymer exhibiting improved transparency which is suitable for a resist resin used in a chemical-amplification-type resist being applicable for photolithography using exposure light at 180 nm or shorter, this invention provides a polymer comprising a repeating unit resulting from polymerization of a monomer exhibiting a polymerization activity, wherein the monomer has a fluorine-containing acetal or ketal structure represented by general formula (1): wherein R represents an atomic group containing a carbon-carbon double bond exhibiting polymerization activity; at least one of R1 and R2 is fluorinated alkyl group or fluorinated aryl group having 1 to 20 carbon atoms; and R3 represents a radical selected from the group consisting of hydrogen atom, alkyl group, alkoxy-substituted alkyl group, fluorinated alkyl group, aryl group, fluorinated aryl group, aralkyl group and fluorinated aralkyl group having 1 to 20 carbon atoms.
摘要翻译：作为适用于化学放大型抗蚀剂中使用的抗蚀剂树脂的聚合物，其可应用于使用180nm以下的曝光光的光刻法，作为聚合物，其具有提高的透明性，提供了包含由单体聚合得到的重复单元的聚合物表现出聚合活性，其中所述单体具有由通式（1）表示的含氟缩醛或缩酮结构：其中R表示含有表现出聚合活性的碳 - 碳双键的原子团; R 1和R 2中的至少一个是具有1至20个碳原子的氟化烷基或氟化芳基; R 3表示选自氢原子，烷基，烷氧基取代的烷基，氟化烷基，芳基，氟化芳基，芳烷基和含氟芳烷基的基团至20个碳原子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式