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1. 发明授权

US06352813B2 Photosensitive resin composition and patterning method using the same 失效
标题翻译：感光树脂组合物和使用其的图案化方法
公开(公告)号：US06352813B2
公开(公告)日：2002-03-05
申请号：US09102916
申请日：1998-06-23
申请人： Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
发明人： Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
IPC分类号： G03F7032
CPC分类号： G03F7/0382
摘要： A photosensitive resin composition in accordance with the present invention has (a) a polymer having repetition units expressed by a general formula (1): wherein R1, R3, and R5 each represents a hydrogen atom or a methyl group, R2 represents a bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 22 inclusive, R4 represents a hydrocarbon group including an epoxy group, x+y+z=1, wherein 0
摘要翻译：本发明的感光性树脂组合物具有（a）具有由通式（1）表示的重复单元的聚合物：其中R1，R3和R5各自表示氢原子或甲基，R2表示桥连环状碳数为7〜22的烃基，R4表示包含环氧基的烃基，x + y + z = 1，其中0

2. 发明授权

US6140010A Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same 有权
标题翻译：用于短波长光束的负型光致抗蚀剂组合物及其形成方法
公开(公告)号：US6140010A
公开(公告)日：2000-10-31
申请号：US140650
申请日：1998-08-26
申请人： Shigeyuki Iwasa , Katsumi Maeda , Kaichiro Nakano , Etsuo Hasegawa
发明人： Shigeyuki Iwasa , Katsumi Maeda , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： G03F7/004 , G03F7/033 , G03F7/038 , H01L21/027
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative type photoresist composition includes a polymer which contains a repetition unit which is expressed by a general chemical formula (1) and has a weight average molecule weight in a range of 1000 to 500000, a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The general chemical formula (1) is as follows, ##STR1## where in the general chemical formula (1), R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group. Also, the general chemical formula (2) is as follows, ##STR2## In the general chemical formula (2), X is a group expressed by a general chemical formula (3), a hydrogen atom, a hydrocarbon group containing carbon atoms in a range of 1 to 6, an alkoxy group containing carbon atoms in a range of 1 to 3, or a hydroxyl group, a1, a2 and a3 are 1 or 2, respectively, b1, b2 and b3 are 0 or 1, respectively, and a1+b1=2, a2+b2=2, and a3+b3=2, and R.sup.8 is a hydrogen atom, or an alkyl group containing carbon atoms in a range of 1 to 6. ##STR3##
摘要翻译：负型光致抗蚀剂组合物包括含有由通式（1）表示的重复单元，重均分子量为1000〜500000的聚合物，由含有官能团的化合物构成的交联剂其由一般化学式（2）表示，光生酸剂响应于光而产生酸。一般化学式（1）如下，其中在通式（1）中，R 1为氢原子或甲基，R 2为碳原子数为7〜18的亚烷基，桥连环状烃基。另外，通式（2）中，通式（2）中，X为通式（3）表示的基团，氢原子，碳原子数为 1〜6中，碳原子数1〜3的烷氧基或羟基a1，a2，a3分别为1或2，b1，b2和b3分别为0或1，a1 + b1 = 2，a2 + b2 = 2，a3 + b3 = 2，R8为氢原子或碳原子数为1〜6的烷基。

3. 发明授权

US6106998A Negative resist materials, pattern formation method making use thereof, and method of manufacturing semiconductor devices 失效
标题翻译：使用负电阻材料，图案形成方法以及制造半导体器件的方法
公开(公告)号：US6106998A
公开(公告)日：2000-08-22
申请号：US94021
申请日：1998-06-09
申请人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative resist material suitable for lithography employing for exposure a beam having a wavelength of 220 nm or less. The negative resist material contains a polymer having a weight average molecular weight of 1,000-500,000 and represented by the following formula (1): ##STR1## wherein R.sup.1, R.sup.3, and R.sup.5 are hydrogen atoms or methyl groups; R.sup.2 is a specified divalent hydrocarbon group; R.sup.4 is a hydrocarbon group having an epoxy group; R.sup.6 is a hydrogen atom or a C.sub.1-12 hydrocarbon group; and each of x, y, and z represents an arbitrary number satisfying certain relations; a photoacid generator generating an acid through exposure; and optionally a polyhydric alcohol or a polyfunctional epoxy group. The present invention also discloses a pattern formation method, and a method of manufacturing semiconductor devices using the pattern formation method.
摘要翻译：适合用于曝光波长为220nm以下的光束的负光刻胶材料。负抗蚀剂材料含有重均分子量为1,000〜500,000的聚合物，由下式（1）表示：其中R1，R3和R5是氢原子或甲基; R2是指定的二价烃基; R4是具有环氧基的烃基; R6是氢原子或C1-12烃基; 并且x，y和z分别表示满足一定关系的任意数; 通过曝光产生酸的光酸发生剂; 和任选的多元醇或多官能环氧基。本发明还公开了一种图案形成方法以及使用图案形成方法制造半导体器件的方法。

4. 发明授权

US5585507A Alkylsulfonium salts and photoresist compositions containing the same 失效
标题翻译：烷基锍盐和含有它们的光致抗蚀剂组合物
公开(公告)号：US5585507A
公开(公告)日：1996-12-17
申请号：US478969
申请日：1995-06-07
申请人： Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
发明人： Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
IPC分类号： C07C381/12 , G03F7/004 , C07F5/02 , C07F9/66 , C07F9/90
CPC分类号： G03F7/0045 , C07C381/12 , C07C2101/08 , C07C2101/14 , C07C2103/74 , Y10S430/111 , Y10S430/122
摘要： A photoresist composition containing an alkylsulfonium salt compound represented by the following general formula (I): ##STR1## Wherein R.sup.1 and R.sup.2 may be the same or different, each being a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, R.sup.3 is a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, a C.sub.5 to C.sub.7 2-oxocycloalkyl radical, or a linear or branched C.sub.3 to C.sub.8 2-oxoalkyl radical, and Y.sup.- represents a counter ion. The photoresist composition has high transparency to deep U.V. light having wavelengths of 220 nm or less and is capable of forming good fine patterns with high sensitivity, thus being useful as chemically amplified type resist which is exposed to the deep U.V. light from an ArF excimer laser.
摘要翻译：含有由以下通式（I）表示的烷基锍盐化合物的光致抗蚀剂组合物：其中R1和R2可以相同或不同，各自为直链，支链或环状的C1至C8烷基，R3 是直链，支链或环状的C1至C8烷基，C5至C72-氧代环烷基，或直链或支链C3至C82-氧代烷基，Y-表示抗衡离子。光致抗蚀剂组合物对深紫外线具有高透明度。具有220nm或更小波长的光并能够形成具有高灵敏度的良好精细图案，因此可用作暴露于深紫外线的化学放大型抗蚀剂。来自ArF准分子激光的光。

5. 发明授权

US06924079B2 Resist resin, chemical amplification type resist, and method of forming of pattern with the same 失效
标题翻译：抗蚀树脂，化学放大型抗蚀剂，以及与其形成图案的方法
公开(公告)号：US06924079B2
公开(公告)日：2005-08-02
申请号：US10240404
申请日：2001-07-02
申请人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： C08F34/02 , C08F220/10 , C08F222/06 , C08G61/06 , C08G61/08 , C08G61/12 , G03F7/039 , H01L21/027 , H01L21/312
CPC分类号： G03F7/0392 , C08G61/06 , C08G61/08 , C08G61/12 , C08G61/125 , G03F7/0395 , G03F7/0397 , H01L21/312 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a resist resin having an acid-decomposable group, which gives rise to decomposition of the acid-decomposable group to show an increased solubility to an aqueous alkali solution by the action of an acid, wherein the resist resin has, in the main chain, an alicyclic lactone structure represented by the following general formula (1). According to the present invention, a positive-type chemically amplified resist can be obtained which has high transparency to a far-ultraviolet light having a wavelength of about 220 nm or less, excellent etching resistance, and excellent adhesion to substrate; and a fine pattern required in production of semiconductor device can be formed. (wherein Z is an alicyclic hydrocarbon group having a lactone structure).
摘要翻译：本发明涉及具有酸分解性基团的抗蚀剂树脂，该抗蚀剂树脂引起酸分解基团的分解，以通过酸的作用使碱溶液的溶解度增加，其中抗蚀剂树脂具有主链，由以下通式（1）表示的脂环族内酯结构。根据本发明，可以获得对具有约220nm或更小的波长的远紫外光具有高透明度，优异的耐蚀刻性和对基底的优异粘附性的正型化学放大抗蚀剂; 并且可以形成半导体器件的制造所需的精细图案。（其中Z为具有内酯结构的脂环族烃基）。

6. 发明授权

US5994025A Photoresist, compounds for composing the photoresist, and method of forming pattern by using the photoresist 失效
标题翻译：光致抗蚀剂，用于构成光致抗蚀剂的化合物，以及通过使用光致抗蚀剂形成图案的方法
公开(公告)号：US5994025A
公开(公告)日：1999-11-30
申请号：US763054
申请日：1996-12-10
申请人： Shigeyuki Iwasa , Kaichiro Nakano , Katsumi Maeda , Takeshi Ohfuji , Etsuo Hasegawa
发明人： Shigeyuki Iwasa , Kaichiro Nakano , Katsumi Maeda , Takeshi Ohfuji , Etsuo Hasegawa
IPC分类号： C08F220/04 , C08F220/06 , C08F220/10 , C08F220/18 , C08F220/26 , C08F220/28 , C09D133/04 , C09D133/14 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/11 , Y10S430/111
摘要： There is provided a photoresist including (a) a resin composed of a polymer represented with the following general formula [1], and (b) a photo acid generator which produces acid when exposed to a light: ##STR1## wherein each of R.sup.1, R.sup.3 and R.sup.7 represents one of a hydrogen atom and a methyl group, R.sup.2 represents a hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.4 represents one of a hydrogen atom and a hydrocarbon group having a carbon number of 1 or 2, R.sup.5 represents a hydrocarbon group having a carbon number of 1 or 2, R.sup.6 represents one of (a) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive, (b) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an alkoxy group having a carbon number in the range of 1 to 12 both inclusive, and (c) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an acyl group having a carbon number in the range of 1 to 13 both inclusive, x+y+z=1, x is in the range of 0.1 to 0.9, y is in the range of 0.1 to 0.7, and z is in the range of 0 to 0.7. The resin has a weight percent in the range of 75 to 99.8 both inclusive, and the photo acid generator has a weight percent in the range of 0.2 to 25 both inclusive. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist has high resolution to thereby make it possible to form a fine pattern without resist residue.
摘要翻译：提供了包含（a）由以下通式[1]表示的聚合物构成的树脂的光致抗蚀剂，（b）暴露于光时产生酸的光酸产生剂：其中R1，R3和R7 表示氢原子和甲基中的一个，R 2表示包含桥连环烃基并且碳数为7〜13的碳原子的烃基，R4表示氢原子和具有碳原子数1或2，R 5表示碳数为1或2的烃基，R 6表示（a）碳原子数为1〜12的烃基，（b）烃碳数为1〜12的碳原子数为2〜12的碳原子数为2〜12的烷氧基，（c）碳数为1以上的烃基到12，并用a替代碳原子数为1〜13的碳原子，x + y + z = 1，x在0.1〜0.9的范围内，y在0.1〜0.7的范围内，z在范围为0〜0.7。树脂的重量百分比在75〜99.8之间，光酸产生剂的重量百分比在0.2〜25的范围内。上述光致抗蚀剂通过副反应不产生额外的聚合物。因此，光致抗蚀剂具有高分辨率，从而可以形成没有抗蚀剂残留物的精细图案。

7. 发明授权

US08119751B2 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it 有权
公开(公告)号：US08119751B2
公开(公告)日：2012-02-21
申请号：US12230485
申请日：2008-08-29
申请人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： C08F24/00 , C08F10/00 , C08F32/08 , C08F118/02 , C08F2/00
摘要： A photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group or one of a specified subset of alicyclic hydrocarbon groups, alicyclic hydrocarbon groups, or hydrocarbon groups; R6 is a hydrogen atom or one of a specified subset of hydrocarbon groups or alicyclic hydrocarbon groups; x, y and z are optional values which meet x+y+z=1, 0

8. 发明授权

US06559337B2 (Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition 有权
标题翻译：（甲基）丙烯酸酯，聚合物，光致抗蚀剂组合物和使用组合物的图案形成方法
公开(公告)号：US06559337B2
公开(公告)日：2003-05-06
申请号：US09811399
申请日：2001-03-20
申请人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： C07C6952
CPC分类号： C08F220/28 , G03F7/0045 , G03F7/039 , Y10S430/111
摘要： A photoresist composition contains a photoacid generator and a polymer represented by the following formula: wherein R4, R6 and R9 each represents a hydrogen atom or a methyl group, R5 and R7 each represents a C17-23 divalent hydrocarbon group containing a bridged cyclic hydrocarbon group, R8 represents an acid-decomposable group, R10 represents a hydrogen atom or a C1-12 hydrocarbon group, x+y+z equals to 1, and x, y and z stand for 0 to 1, 0 to 1, and 0 to 0.9, respectively, and having a weight average molecular weight of from 1,000 to 500,000. According to the present invention, a chemical modification photoresist composition having high transparency to radiation of 220 nm and shorter and improved in etching resistance can be provided.
摘要翻译：光致抗蚀剂组合物含有光酸产生剂和由下式表示的聚合物：其中R4，R6和R9各自表示氢原子或甲基，R5和R7各自表示含有桥连环状烃基的C17-23二价烃基 R8表示酸分解基团，R10表示氢原子或C1-12烃基，x + y + z等于1，x，y和z表示0至1,0，...，0至 0.9，重均分子量为1,000〜500,000。根据本发明，可以提供对220nm以下的放射线的透明度高，耐腐蚀性提高的化学改性光致抗蚀剂组合物。

9. 发明授权

US06528232B1 Sulfonium salt compound, photoresist composition and method for patterning by employing same 失效
标题翻译：锍盐化合物，光致抗蚀剂组合物和通过使用它们进行图案化的方法
公开(公告)号：US06528232B1
公开(公告)日：2003-03-04
申请号：US09699368
申请日：2000-10-31
申请人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： G03F7004
CPC分类号： C07D333/46 , C07C381/12 , C07D311/22 , C07D335/02 , G03F7/0045 , G03F7/038 , G03F7/039
摘要： A sulfonium salt compound designated by a general formula (I), a photoresist composition containing the sulfonium salt compound and a method for patterning by employing the sulfonium salt compound. In the general formula (I), R1 and R2 are independently selected from the group consisting of a linear alkyl group, a branched alkyl group, a monocyclic alkyl group and a cross-linked cyclic alkyl group, or R1 and R2 having the saturated alkyl group are linked to each other forming a ring or R1 and R2 are linked to each other forming a ring having a substituted oxo group, R3, R4, R5 and R6 are independently selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl group and an alkoxy group having 1 to 4 carbon atoms, X is selected from the group consisting of —CH2—, —C2H4— and —OCH2— (wherein an oxy group is bonded to a benzene ring), and Y− is a counter ion
摘要翻译：由通式（I）表示的锍盐化合物，含有锍盐化合物的光致抗蚀剂组合物和使用锍盐化合物进行图案化的方法。在通式（I）中，R 1和R 2独立地选自直链烷基，支链烷基，单环烷基和交联的环烷基，或具有饱和烷基的R 1和R 2 基团彼此连接形成环或R 1和R 2彼此连接形成具有取代的氧代基的环，R 3，R 4，R 5和R 6独立地选自氢原子，卤素原子，烷基和具有1至4个碳原子的烷氧基，X选自-CH 2 - ， - C 2 H 4 - 和-OCH 2 - （其中氧基键合到苯环上），Y-是抗衡离子

10. 发明授权

US06469197B1 Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same 失效
标题翻译：使用具有1,2-二醇结构的聚合物的负光致抗蚀剂组合物和使用其形成图案的方法
公开(公告)号：US06469197B1
公开(公告)日：2002-10-22
申请号：US09668275
申请日：2000-09-25
申请人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： C07C6474
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/111
摘要： It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source. The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1) a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained. Since the polymer has not a benzene ring, unlike a base polymer of a conventional negative resist, the polymer has high transparency to ArF excimer laser beam and also has high etching resistance because of its bridged alicyclic group.
摘要翻译：本发明的目的是提供一种用于光刻的负性光致抗蚀剂组合物，其使用诸如ArF准分子激光束的短波长光作为光源。本发明的负型光致抗蚀剂组合物是包含至少一种具有由通式（1）表示的单元的交联剂和光酸产生剂的聚合物，并且所述交联剂能够在酸催化剂存在下使聚合物交联，由此聚合物在显影剂中不溶化。由于本发明的负光刻胶组合物通过在曝光部分由光酸产生剂产生的酸的作用而在显影剂中不溶解，因此可以获得负图案。由于聚合物不具有苯环，与常规的负性抗蚀剂的基础聚合物不同，聚合物对ArF准分子激光束具有高透明度，并且由于其桥连的脂环族基团也具有高耐蚀刻性。

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