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    • 1. 发明授权
    • Thin film capacitor formed in via
    • 薄膜电容器形成在通孔中
    • US06278153B1
    • 2001-08-21
    • US09420561
    • 1999-10-19
    • Katsumi KikuchiTadanori ShimotoKoji MatsuiAkinobu Shibuya
    • Katsumi KikuchiTadanori ShimotoKoji MatsuiAkinobu Shibuya
    • H01L27108
    • H01L28/55H01L21/3212H01L21/76877H01L28/75H05K1/162
    • There is provided a thin film capacitor including (a) a lower electrode, (b) an insulating layer formed burying the lower electrode therein and formed with a via-hole reaching the lower electrode, (c) a dielectric layer formed on an inner sidewall of the via-hole and covering an exposed surface of the lower electrode therewith, and (d) an upper electrode surrounded by the dielectric layer. In accordance with the thin film capacitor, the upper electrode is formed to be buried in the via-hole formed above the lower electrode. Hence, it is possible to prevent short-circuit between the upper and lower electrodes, and degradation of the dielectric layer during fabrication of a thin film capacitor, both of which enhances reliability of a capacitor. In addition, a multi-layered wiring structure could be readily fabricated on the thin film capacitor.
    • 提供一种薄膜电容器,其包括(a)下电极,(b)在其中埋设下电极并形成有到达下电极的通孔形成的绝缘层,(c)形成在内侧壁上的电介质层 的通孔,并且覆盖下电极的暴露表面,以及(d)由电介质层包围的上电极。 根据薄膜电容器,上电极被形成为埋在形成在下电极上的通孔中。 因此,可以防止上下电极之间的短路,以及薄膜电容器的制造时的电介质层的劣化,这两者都提高了电容器的可靠性。 此外,可以容易地在薄膜电容器上制造多层布线结构。