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    • 1. 发明申请
    • Gastrostomy Tube Extension Device
    • 胃造口管扩张装置
    • US20080208208A1
    • 2008-08-28
    • US11631835
    • 2005-04-26
    • Katsuki NagataYasuyuki Baba
    • Katsuki NagataYasuyuki Baba
    • A61M37/00
    • A61J15/0038A61J15/0015A61J15/0026A61J15/0065
    • To provide a gastrostomy tube extension device which can facilitate insertion or removal of a gastrostomy tube by making the degree of extension of the gastrostomy tube constant. [Means for Resolution] A gastrostomy tube extension device 20 used for inserting and taking out a gastrostomy tube 10 into/from a hole 33 formed on a patient's abdomen, the gastrostomy tube 10 including an outer fixing member 10a to be installed on the skin surface side, an inner fixing member 10c installed on the inner surface side of the stomach wall, and a tube member 10b for connecting the outer fixing member 10a and the inner fixing member 10c, and the gastrostomy tube extension device comprising a rod 21 and an engaging member 22. The rod 21 has a rod-shaped member which can push the center of the distal end of the inner fixing member 10c with its distal portion toward the distal end, and with a plurality of engaging step portions 24a are formed on the proximal portion. The engaging member 22 is also provided with a lower engaging portion 25 which can engage with an outer fixing member 10a and an upper engaging portion 26 which can engage one of the engaging step portions 24a of the rod 21.
    • 提供胃造口管延伸装置,其可以通过使胃造口管的延伸程度恒定来促进胃造口管的插入或移除。 [解决方法]用于将胃造口管10插入/取出形成在患者腹部的孔33中的胃造口管延伸装置20,胃造口管10包括要安装在皮肤上的外固定构件10a 表面侧,安装在胃壁的内表面侧的内固定构件10c和用于连接外固定构件10a和内固定构件10c的管构件10b,以及胃造口管延伸装置,其包括 杆21和接合构件22.杆21具有杆状构件,其可以使其内部固定构件10c的远端的中心的远端部朝向远端推动,并且具有多个接合步骤部分 24 a形成在近端部分上。 接合构件22还设置有可与外部固定构件10a接合的下部接合部25和能够接合杆21的接合台阶部分24a之一的上部接合部26。
    • 2. 发明授权
    • Gastrostomy tube extension device
    • 胃造口管延长装置
    • US07967787B2
    • 2011-06-28
    • US11631835
    • 2005-04-26
    • Katsuki NagataYasuyuki Baba
    • Katsuki NagataYasuyuki Baba
    • A61M5/178
    • A61J15/0038A61J15/0015A61J15/0026A61J15/0065
    • A gastrostomy tube extension device which can facilitate insertion or removal of a gastrostomy tube by making the degree of extension of the gastrostomy tube constant. A gastrostomy tube extension device used for inserting and taking out a gastrostomy tube into/from a hole formed on a patient's abdomen, the gastrostomy tube including an outer fixing member to be installed on the skin surface side, an inner fixing member installed on the inner surface side of the stomach wall, and a tube member for connecting the outer fixing member and the inner fixing member and the gastrostomy tube extension device comprising a rod and an engaging member. The rod has a rod-shaped member which can push the center of the distal end of the inner fixing member with its distal portion toward the distal end, and with a plurality of engaging step portions formed on the proximal portion. The engaging member is also provided with a lower engaging portion which can engage with an outer fixing member and an upper engaging portion which can engage one of the engaging step portions of the rod.
    • 胃造口管延伸装置,其可以通过使胃造口管的延伸程度恒定来促进胃造口管的插入或移除。 一种胃造口管延伸装置,其用于将胃造口管插入到形成于患者腹部的孔内或从形成于患者腹部的孔中取出,所述胃造口管包括安装在皮肤表面侧的外固定构件,内固定构件, 胃壁的表面侧,以及用于连接外固定构件和内固定构件的管构件以及包括杆和接合构件的胃造口管延伸装置。 杆具有棒状构件,其能够将内固定构件的远端的中心部的远侧部朝向前端推压,并且在近端部上形成有多个接合台阶部。 接合构件还设置有可与外部固定构件接合的下部接合部分和能够接合杆的接合步骤部分中的一个的上部接合部分。
    • 3. 发明授权
    • Semiconductor memory device and method of manufacturing the same
    • 半导体存储器件及其制造方法
    • US08648467B2
    • 2014-02-11
    • US13458141
    • 2012-04-27
    • Yasuyuki Baba
    • Yasuyuki Baba
    • H01L23/528H01L21/44
    • H01L27/0688H01L27/101H01L27/2409H01L27/2418H01L27/2481H01L45/06H01L45/08H01L45/085H01L45/10H01L45/1233H01L45/141H01L45/1675H01L2924/0002H01L2924/00
    • A method of manufacturing a semiconductor memory device according to the embodiment includes: forming a first stacked-structure; forming a first stripe part and a first hook part at the first stacked-structure; forming a second stacked-structure on the first stacked-structure; forming a second stripe part and a second hook part at the second stacked-structure; repeating the above-described four steps for a certain number of times; and forming a contact plug contacting the first or second hook parts. The etching is conducted to remove the first stacked-structure in a region at which the second hook part is to be formed in the second stacked-structure higher than the first stacked-structure by one layer. The etching is conducted to remove the second stacked-structure in a region at which the first hook part is to be formed in the first stacked-structure higher than the second stacked-structure by one layer.
    • 根据实施例的半导体存储器件的制造方法包括:形成第一堆叠结构; 在所述第一堆叠结构处形成第一条纹部分和第一钩部分; 在所述第一堆叠结构上形成第二堆叠结构; 在第二堆叠结构中形成第二条纹部分和第二钩部分; 重复上述四个步骤一定次数; 以及形成接触所述第一或第二钩部的接触塞。 进行蚀刻以将第一叠层结构的第一堆叠结构除去在比第一堆叠结构高的第二层叠结构中的第二钩部将要形成的区域中的第一层叠结构。 进行蚀刻以在第一层叠结构中的第一层叠结构中的第一层叠结构中将要形成第一钩部的区域中的第二层叠结构移除一层以上。
    • 4. 发明授权
    • Nonvolatile semiconductor memory device
    • 非易失性半导体存储器件
    • US08228712B2
    • 2012-07-24
    • US12725655
    • 2010-03-17
    • Yasuyuki Baba
    • Yasuyuki Baba
    • G11C11/00
    • G11C13/0002G11C2213/71G11C2213/72
    • A semiconductor memory device includes a memory cell array configured as an arrangement of memory cells each arranged between a first line and a second line and each including a variable resistor. A control circuit controls a voltage applied to the first line or the second line. A current limiting circuit limits a current flowing through the first line or the second line to a certain upper limit or lower. In a case where a writing operation or an erasing operation to a memory cell is implemented a plural number of times repeatedly, the current limiting circuit sets the upper limit in the writing operation or erasing operation of the p-th time higher than the upper limit in the writing operation or erasing operation of the q-th time (q
    • 半导体存储器件包括存储单元阵列,其被配置为每个布置在第一线路和第二线路之间并且各自包括可变电阻器的存储器单元的布置。 控制电路控制施加到第一线或第二线的电压。 电流限制电路将流过第一线或第二线的电流限制在一定的上限或更低。 在对存储单元的写入操作或擦除操作重复多次的情况下,限流电路将写入操作的上限或第p个时间的擦除操作设置为高于上限 在第q次的写入操作或擦除操作(q
    • 6. 发明授权
    • Method and system for the determination of a quality of bonded area in a
boxmaking blank
    • 用于确定制箱坯料中保税区质量的方法和系统
    • US5993367A
    • 1999-11-30
    • US112357
    • 1998-07-09
    • Koji HattoriYasuyuki BabaYasunari Suzuki
    • Koji HattoriYasuyuki BabaYasunari Suzuki
    • B31B49/02G01N21/88B31B1/00B32B31/00
    • G01N21/88
    • A method and system for determining the bonding quality of a bonded area of a flapped boxmaking blank in a boxmaking apparatus at an assembling station of a production line, where opposite end portions of the blank are bonded together with confronting edges of companion end flaps defining a required gap, in terms of the outline of the gap. The quality determination is accomplished by irradiating sheetlike light onto the bonded area across the gap, forming an image of the irradiated light as a light image line composed of discrete segments which are arranged along a reference line for the flap portions and include at least one line segment located off the reference line, computing a ratio of a length of the off-line segment to the entire length of the light image line to obtain a width of the gap, and comparing the width of the gap with a preset reference value.
    • 一种用于确定在生产线的组装站处的制盒设备中的盒盖式坯料的接合区域的接合质量的方法和系统,其中坯料的相对端部通过相邻端翼片的相对边缘粘合在一起,限定一个 所需的差距,就差距的大纲而言。 质量确定是通过将​​片状光照射到跨越间隙的接合区域上形成的,形成被照射的光的图像,作为由沿着用于折片部分的参考线布置的分立片组成的光图像线,并且包括至少一条线 计算出偏离线段的长度与光图像线的整个长度的比率,以获得间隙的宽度,并将间隙的宽度与预设的参考值进行比较。
    • 9. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US09252097B2
    • 2016-02-02
    • US13599153
    • 2012-08-30
    • Yasuyuki Baba
    • Yasuyuki Baba
    • H01L27/24H01L23/498H01L45/00H01L27/02
    • H01L23/49844H01L27/0207H01L27/2409H01L27/2418H01L27/2481H01L45/04H01L45/06H01L45/08H01L45/085H01L45/10H01L45/1233H01L45/141H01L2924/0002H01L2924/00
    • The semiconductor memory device comprises a plurality of first wiring lines extending in a first direction, a plurality of second wiring lines extending in a second direction crossing the first direction, and a memory cell array comprising memory cells, the memory cells being connected to the first wiring lines and second wiring lines in the crossing portions of the first and second wiring lines. A plurality of first dummy-wiring-line regions are formed in the peripheral area around the memory cell array. A contact is formed in the peripheral area, the contact extending in a third direction perpendicular to the first and second directions. A plurality of second dummy-wiring-line regions are formed in the periphery of the contact. The mean value of the areas of the second dummy-wiring-line regions is less than the mean value of the areas of the first dummy-wiring-line regions.
    • 半导体存储器件包括沿第一方向延伸的多个第一布线,沿与第一方向交叉的第二方向延伸的多个第二布线,以及包括存储单元的存储单元阵列,存储单元连接到第一布线 第一布线和第二布线的交叉部分中的布线和第二布线。 在存储单元阵列周围的周边区域中形成多个第一虚设布线区域。 接触件形成在周边区域中,接触件沿垂直于第一和第二方向的第三方向延伸。 多个第二虚设布线区域形成在触点的周围。 第二虚拟布线区域的面积的平均值小于第一虚拟布线区域的面积的平均值。