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1. 发明授权

US07857985B2 Metal-polishing liquid and chemical mechanical polishing method using the same 失效
标题翻译：金属抛光液和化学机械抛光方法使用相同
公开(公告)号：US07857985B2
公开(公告)日：2010-12-28
申请号：US11699406
申请日：2007-01-30
申请人： Katsuhiro Yamashita , Kenji Takenouchi , Tomoo Kato , Yoshinori Nishiwaki , Mihoko Ishima
发明人： Katsuhiro Yamashita , Kenji Takenouchi , Tomoo Kato , Yoshinori Nishiwaki , Mihoko Ishima
IPC分类号： C03C15/00 , C03C25/68
CPC分类号： C09G1/02 , C09K3/1445 , C09K3/1463 , H01L21/3212
摘要： The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.
摘要翻译：本发明提供了一种金属抛光液，其包含氧化剂和胶体二氧化硅，其中胶体二氧化硅的一部分表面被铝原子覆盖，并使用化学机械抛光方法。可以包含氨基酸，具有异噻唑啉-3-酮骨架的化合物，有机酸，钝化成膜剂，阳离子表面活性剂，非离子表面活性剂和水溶性聚合物。在半导体装置的制造中使用的化学机械抛光中使用的金属研磨液，能够使被研磨对象的低凹陷，能够进行抛光面的面内均匀性优异的抛光。

2. 发明申请

US20070186484A1 Metal-polishing liquid and chemical mechanical polishing method using the same 失效
标题翻译：金属抛光液和化学机械抛光方法使用相同
公开(公告)号：US20070186484A1
公开(公告)日：2007-08-16
申请号：US11699406
申请日：2007-01-30
申请人： Katsuhiro Yamashita , Kenji Takenouchi , Tomoo Katou , Yoshinori Nishiwaki , Mihoko Ishima
发明人： Katsuhiro Yamashita , Kenji Takenouchi , Tomoo Katou , Yoshinori Nishiwaki , Mihoko Ishima
IPC分类号： B24D3/02
CPC分类号： C09G1/02 , C09K3/1445 , C09K3/1463 , H01L21/3212
摘要： The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.
摘要翻译：本发明提供了一种金属抛光液，其包含氧化剂和胶体二氧化硅，其中胶体二氧化硅的一部分表面被铝原子覆盖，并使用化学机械抛光方法。可以包含氨基酸，具有异噻唑啉-3-酮骨架的化合物，有机酸，钝化成膜剂，阳离子表面活性剂，非离子表面活性剂和水溶性聚合物。在半导体装置的制造中使用的化学机械抛光中使用的金属研磨液，能够使被研磨对象的低凹陷，能够进行抛光面的面内均匀性优异的抛光。

3. 发明申请

US20080173328A1 Cleaning liquid and cleaning method using the same 有权
标题翻译：清洗液和使用其的清洗方法
公开(公告)号：US20080173328A1
公开(公告)日：2008-07-24
申请号：US11898271
申请日：2007-09-11
申请人： Yoshinori Nishiwaki
发明人： Yoshinori Nishiwaki
IPC分类号： B08B3/08 , B08B1/00 , C11D3/20 , C11D1/22 , C11D3/37
CPC分类号： C11D11/0047 , C11D1/22 , C11D1/24 , C11D1/345 , C11D3/2082 , C11D3/2086 , C11D3/3703 , C11D3/3707 , C11D3/3765 , C11D3/378 , H01L21/02074
摘要： A cleaning liquid used in cleaning of a substrate for use in semiconductor devices conducted after chemical mechanical polishing in manufacture of semiconductor devices, comprising a polycarboxylic acid, an anionic surfactant having an aromatic ring structure in a molecule, a polymer compound having an acidic group on a side chain, and a low molecular weight polyethylene glycol, at the cleaning liquid having a pH of 5 or less, as well as a method of cleaning using the same.
摘要翻译：一种清洗液，其用于半导体装置的半导体装置的清洗中，所述基板包括多元羧酸，分子中具有芳香环结构的阴离子表面活性剂，具有酸性基团的高分子化合物侧链和低分子量聚乙二醇，在pH为5以下的清洗液中，以及使用其的清洗方法。

4. 发明授权

US06939661B2 Blocked isocyanate compound-containing composition for forming a radiation absorbing coating and anti-reflective coating formed therefrom 有权
标题翻译：封闭的含异氰酸酯化合物的组合物，用于形成辐射吸收涂层和由其形成的抗反射涂层
公开(公告)号：US06939661B2
公开(公告)日：2005-09-06
申请号：US10232081
申请日：2002-08-30
申请人： Wen-Bing Kang , Ken Kimura , Shoko Matsuo , Yoshinori Nishiwaki , Hatsuyuki Tanaka
发明人： Wen-Bing Kang , Ken Kimura , Shoko Matsuo , Yoshinori Nishiwaki , Hatsuyuki Tanaka
IPC分类号： C08G18/80 , C09D175/04 , G03F7/09 , G03F7/004
CPC分类号： C08G18/80 , C09D175/04 , G02B1/111 , G03F7/091 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/115 , Y10S430/151
摘要： A composition for forming a radiation absorbing coating which comprises an organic solvent, a radiation absorbing polymer or a radiation absorbing material dissolved therein and a crosslinking agent having blocked isocyanate groups. Since the isocyanate groups of the crosslinking agent have been blocked, the composition containing the crosslinking agent has excellent storage stability. When the composition applied to a substrate and then baked, crosslinking proceeds to give an antireflective coating, which does not intermix with a resist layer to be formed thereon by coating and is free from diffusion of a photo-generated acid thereinto from the resist layer. As a result, a resist image free from footing or scum can be formed.
摘要翻译：一种用于形成辐射吸收涂层的组合物，其包含溶解在其中的有机溶剂，辐射吸收聚合物或辐射吸收材料以及具有封闭的异氰酸酯基团的交联剂。由于交联剂的异氰酸酯基团已经被阻断，所以含有交联剂的组合物具有优异的储存稳定性。当将组合物施加到基底上然后烘烤时，进行交联以得到抗反射涂层，其不与通过涂覆在其上形成的抗蚀剂层混合，并且其中没有光抗蚀剂层中的光产生的酸的扩散。结果，可以形成没有基脚或浮渣的抗蚀剂图像。

5. 发明申请

US20070232512A1 Cleaning solution for substrate for use in semiconductor device and cleaning method using the same 审中-公开
标题翻译：用于半导体器件的基板用清洗液及使用其的清洗方法
公开(公告)号：US20070232512A1
公开(公告)日：2007-10-04
申请号：US11727541
申请日：2007-03-27
申请人： Yoshinori Nishiwaki
发明人： Yoshinori Nishiwaki
IPC分类号： C11D7/32
CPC分类号： C11D11/0047 , C11D1/72 , C11D1/721 , C11D3/2075 , C11D3/3707
摘要： A cleaning solution for a substrate for use in a semiconductor device, which is used after a chemical mechanical polishing process in a semiconductor device production process, the cleaning solution containing a nonionic surfactant represented by the following formula (I), an organic acid, and a polyethylene glycol having a number average molecular weight of 5000 or less, wherein the pH of the cleaning solution 5 or less, as well as a cleaning method using the cleaning solution. In the formula (I), R1 to R6 each independently represent a hydrogen atom or alkyl group having 1 to 10 carbon atoms, X and Y each independently represent an ethyleneoxy group or propyleneoxy group, and m and n each independently represent an integer from 0 to 20.
摘要翻译：一种用于半导体器件制造工序中的化学机械研磨工序后使用的半导体装置用基板的清洗液，含有下述式（I）表示的非离子性表面活性剂的清洗液，有机酸，和数均分子量为5000以下的聚乙二醇，其中，清洗液的pH5以下，以及使用该清洗液的清洗方法。在式（I）中，R 1至R 6各自独立地表示氢原子或具有1至10个碳原子的烷基，X和Y各自独立地表示亚乙基氧基基或亚丙氧基，m和n各自独立地表示0〜20的整数。

6. 发明申请

US20070225187A1 Cleaning solution for substrate for use in semiconductor device and cleaning method using the same 审中-公开
标题翻译：用于半导体器件的基板用清洗液及使用其的清洗方法
公开(公告)号：US20070225187A1
公开(公告)日：2007-09-27
申请号：US11723536
申请日：2007-03-20
申请人： Yoshinori Nishiwaki
发明人： Yoshinori Nishiwaki
IPC分类号： C11D7/32
CPC分类号： C11D1/44 , C11D3/0047 , C11D3/2075 , C11D11/0047 , H01L21/02063 , H01L21/02074 , H01L21/3212
摘要： The invention provides a cleaning solution for use in cleaning a substrate for semiconductor device use after a chemical mechanical polishing process has been carried out in production of a semiconductor device. The cleaning solution contains a compound represented by the following formula (I) and an organic acid. In formula (1), R represents a hydrocarbon group, and n and m each independently represent an integer of 2 or more.
摘要翻译：本发明提供了在半导体器件的制造中进行化学机械抛光处理之后，用于清洁用于半导体器件使用的衬底的清洁溶液。清洗液含有下式（I）表示的化合物和有机酸。在式（1）中，R表示烃基，n和m各自独立地表示2以上的整数。

7. 发明申请

US20070072109A1 Thick film or ultrathick film responsive chemical amplification type photosensitive resin composition 审中-公开
标题翻译：厚膜或超薄膜响应化学放大型感光性树脂组合物
公开(公告)号：US20070072109A1
公开(公告)日：2007-03-29
申请号：US10575338
申请日：2004-09-14
申请人： Toshimichi Makii , Yoshinori Nishiwaki , Kazumichi Akashi
发明人： Toshimichi Makii , Yoshinori Nishiwaki , Kazumichi Akashi
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/022
摘要： [Object] To provide a chemically amplified photosensitive resin composition suitable for forming a thick film and a super thick film, which has high sensitivity, high film residual properties, good coating properties, high resolution and a good pattern shape, and which gives a pattern excellent in heat resistance, in a photosensitive resin composition requiring the formation of a thick resist pattern film such as in the formation of a magnetic pole of a magnetic head or of a bump. [Solving means] A chemically amplified photosensitive resin composition including an alkali soluble novolak resin (A), a resin or compound (B) which in itself is insoluble or slightly soluble in alkali, but becomes soluble in alkali by the action of an acid, that is acid generating agent (C), and a photosensitizing agent (D) containing a quinonediazide group, as well as, if necessary, an alkali soluble acrylic resin (E) and a crosslinking agent (F) for improving film quality.
摘要翻译：本发明提供一种适用于形成厚膜和超厚膜的化学放大感光性树脂组合物，其具有高灵敏度，高膜残留性，良好的涂布性能，高分辨率和良好的图案形状，并且具有图案在需要形成厚的抗蚀剂图案膜的感光性树脂组合物中，例如形成磁头或凸块的磁极时，耐热性优异。 [解决方案]一种化学放大型感光性树脂组合物，其含有碱溶性酚醛清漆树脂（A），树脂或化合物（B），其本身不溶或微溶于碱，但通过酸作用而溶于碱，即酸产生剂（C），以及含有醌二叠氮化物基团的光敏剂（D），以及必要时可提高膜质量的碱溶性丙烯酸树脂（E）和交联剂（F）。

8. 发明授权

US07851426B2 Cleaning liquid and cleaning method using the same 有权
标题翻译：清洗液和使用其的清洗方法
公开(公告)号：US07851426B2
公开(公告)日：2010-12-14
申请号：US11898271
申请日：2007-09-11
申请人： Yoshinori Nishiwaki
发明人： Yoshinori Nishiwaki
IPC分类号： C11D7/32
CPC分类号： C11D11/0047 , C11D1/22 , C11D1/24 , C11D1/345 , C11D3/2082 , C11D3/2086 , C11D3/3703 , C11D3/3707 , C11D3/3765 , C11D3/378 , H01L21/02074
摘要： A cleaning liquid used in cleaning of a substrate for use in semiconductor devices conducted after chemical mechanical polishing in manufacture of semiconductor devices, comprising a polycarboxylic acid, an anionic surfactant having an aromatic ring structure in a molecule, a polymer compound having an acidic group on a side chain, and a low molecular weight polyethylene glycol, at the cleaning liquid having a pH of 5 or less, as well as a method of cleaning using the same.
摘要翻译：一种清洗液，其用于半导体装置的半导体装置的清洗中，所述基板包括多元羧酸，分子中具有芳香环结构的阴离子表面活性剂，具有酸性基团的高分子化合物侧链和低分子量聚乙二醇，在pH为5以下的清洗液中，以及使用其的清洗方法。

9. 发明授权

US07836721B2 Cooling system 失效
标题翻译：冷却系统
公开(公告)号：US07836721B2
公开(公告)日：2010-11-23
申请号：US11632650
申请日：2005-07-14
申请人： Yoshinori Nishiwaki , Tsuneo Nakama , Shigeru Sakashita
发明人： Yoshinori Nishiwaki , Tsuneo Nakama , Shigeru Sakashita
IPC分类号： F25D17/02 , F25D17/00 , C09K5/04
CPC分类号： F25D17/02 , F25B2400/06 , F25B2400/24
摘要： A cooling system (10) comprises a first (40) and a second (50) cold storage tank, a first refrigerator (41) cooling water in the first cold storage tank (40), a first thermal load (92) disposed in a first circulating passage (43) extending from the lower to the upper part of the first cold storage (40), a second thermal load (93) warmer than the first thermal load (92) disposed in a second circulating passage (44a) also extending from the lower to the upper part of the first cold storage tank, a second cold storage tank (50) disposed in the second circulating passage, a second refrigerator (51) cooling water fed from the upper part of the second cold storage (50), wherein a cooling output temperature of the second refrigerator (51) is set to be higher than that of the first refrigerator (41).
摘要翻译：冷却系统（10）包括第一冷藏库（40）和第二冷藏库（50），第一冷藏库（41），冷却第一冷藏库（40）中的水，第一热负荷（92）第一循环通道（43），其从第一冷藏库（40）的下部延伸到上部;第二热负荷（93）比设置在第二循环通道（44a）中的第一热负荷（92）更暖，从第一冷藏箱的下部到上部，设置在第二循环通道中的第二冷藏箱（50），冷却从第二冷藏库（50）的上部供给的水的第二冷藏库（51）其特征在于，所述第二制冷机（51）的冷却输出温度被设定为高于所述第一制冷机（41）的冷却输出温度。

10. 发明授权

US07255972B2 Chemically amplified positive photosensitive resin composition 有权
标题翻译：化学扩增正型感光性树脂组合物
公开(公告)号：US07255972B2
公开(公告)日：2007-08-14
申请号：US10532364
申请日：2003-10-16
申请人： Yoshinori Nishiwaki , Toshimichi Makii
发明人： Yoshinori Nishiwaki , Toshimichi Makii
IPC分类号： G03F7/039 , G03F7/40
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A photosensitive resin composition suitable for forming a thick film and an ultra-thick film used for forming a thick resist pattern used in the process of forming a magnetic pole on a magnetic head and a bump, which comprises (A) an alkali soluble novolak resin, (B) an alkali soluble acrylic resin, (C) an acetal compound, and (D) an acid generator. A polycondensate comprising a structural unit represented by the following general formula (I) (wherein R represents a saturated alkyl group having 1 to 20 carbon atoms, n is an integer of 1 to 10) as an acetal compound
摘要翻译：适用于形成厚膜的感光性树脂组合物和用于形成在磁头和凸块上形成磁极的工序中使用的厚抗蚀剂图案的超薄膜，其包含（A）碱溶性酚醛清漆树脂，（B）碱溶性丙烯酸树脂，（C）缩醛化合物和（D）酸发生剂。缩聚物，其包含由以下通式（I）表示的结构单元（其中R表示碳原子数1〜20的饱和烷基，n为1〜10的整数）作为缩醛化合物

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