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    • 3. 发明授权
    • Ultrasound transducer and ultrasound diagnostic apparatus
    • 超声波换能器和超声波诊断仪
    • US08512251B2
    • 2013-08-20
    • US13614168
    • 2012-09-13
    • Kazuya MatsumotoKatsuhiro WakabayashiJin HiraokaKazuhisa KarakiMamoru HasegawaSatoshi Yoshida
    • Kazuya MatsumotoKatsuhiro WakabayashiJin HiraokaKazuhisa KarakiMamoru HasegawaSatoshi Yoshida
    • A61B8/12
    • A61B8/12A61B8/445A61B8/4494B06B1/0292
    • An ultrasound transducer includes a substrate and a lower electrode layer, a lower insulating layer, an upper insulating layer, and an upper electrode layer. The lower insulating layer and the upper insulating layer are arranged to be opposed to each other via an air gap section. The upper insulating layer and the lower insulating layer are different in a material and thickness and satisfy Equation 1 below. In Equation 1, K1 represents a relative dielectric constant of the lower insulating layer, K2 represents a relative dielectric constant of the upper insulating layer, T1 represents thickness of the lower insulating layer, T2 represents thickness of the upper insulating layer, ρ1(x) represents a charge density distribution in the lower insulating layer, and ρ2(y) represents a charge density distribution in the upper insulating layer. 1 K ⁢ ⁢ 1 ⁢ ∫ 0 T ⁢ ⁢ 1 ⁢ x × ρ ⁢ ⁢ 1 ⁢ ( x ) ⁢ ⁢ ⅆ x = 1 K ⁢ ⁢ 2 ⁢ ∫ 0 T ⁢ ⁢ 2 ⁢ y × ρ ⁢ ⁢ 2 ⁢ ( y ) ⁢ ⁢ ⅆ y ( Equation ⁢ ⁢ 1 )
    • 超声波换能器包括基板和下电极层,下绝缘层,上绝缘层和上电极层。 下绝缘层和上绝缘层经由气隙部分布置成彼此相对。 上绝缘层和下绝缘层的材料和厚度不同,满足下面的等式1。 在等式1中,K1表示下绝缘层的相对介电常数,K2表示上绝缘层的相对介电常数,T1表示下绝缘层的厚度,T2表示上绝缘层的厚度,rho1(x) 表示下绝缘层中的电荷密度分布,并且rho2(y)表示上绝缘层中的电荷密度分布。 1 K·塞尔·∫··············································································· )⁢ⅆy(方程式1)
    • 10. 发明授权
    • Method of fabricating an ultrasonic transducer
    • 制造超声波换能器的方法
    • US08381387B2
    • 2013-02-26
    • US12914651
    • 2010-10-28
    • Kazuya MatsumotoRyo OhtaMamoru HasegawaHideo AdachiKatsuhiro Wakabayashi
    • Kazuya MatsumotoRyo OhtaMamoru HasegawaHideo AdachiKatsuhiro Wakabayashi
    • H04R31/00H04R17/00H01L41/22
    • A61B8/4488A61B8/12A61B8/445B06B1/0292Y10T29/42Y10T29/49005Y10T29/49155
    • An ultrasonic transducer fabrication method including: depositing a conductive material on an insulating layer, partially etching the conductive material to form lower electrodes; depositing an insulating material to cover the lower electrodes to form a first insulating layer and depositing a sacrificial material thereon, performing etching, to create cavities and a channel-shaped sacrificial layer to communicate the cavities; depositing an insulating material on the first insulating layer to form a second insulating layer; partially etching the second insulating layer to form holes; etching and removing the sacrificial layer through the holes to form the cavities and channels; depositing a conductive material on the second insulating layer to plug the holes and form a conductive film; partially etching the conductive film to form upper electrodes and sealing portions which plug the holes; and forming a protective film on the second insulating layer to cover the upper electrodes and the sealing portions.
    • 一种超声换能器制造方法,包括:在绝缘层上沉积导电材料,部分地蚀刻导电材料以形成下电极; 沉积绝缘材料以覆盖下电极以形成第一绝缘层并在其上沉积牺牲材料,执行蚀刻以产生空腔和沟槽状牺牲层以连通空腔; 在所述第一绝缘层上沉积绝缘材料以形成第二绝缘层; 部分蚀刻第二绝缘层以形成孔; 通过孔蚀刻和去除牺牲层以形成空腔和通道; 在第二绝缘层上沉积导电材料以堵塞孔并形成导电膜; 部分地蚀刻导电膜以形成上电极和堵塞孔的密封部分; 以及在所述第二绝缘层上形成保护膜以覆盖所述上电极和所述密封部。