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    • 8. 发明授权
    • Method of fabricating an ultrasonic transducer
    • 制造超声波换能器的方法
    • US08381387B2
    • 2013-02-26
    • US12914651
    • 2010-10-28
    • Kazuya MatsumotoRyo OhtaMamoru HasegawaHideo AdachiKatsuhiro Wakabayashi
    • Kazuya MatsumotoRyo OhtaMamoru HasegawaHideo AdachiKatsuhiro Wakabayashi
    • H04R31/00H04R17/00H01L41/22
    • A61B8/4488A61B8/12A61B8/445B06B1/0292Y10T29/42Y10T29/49005Y10T29/49155
    • An ultrasonic transducer fabrication method including: depositing a conductive material on an insulating layer, partially etching the conductive material to form lower electrodes; depositing an insulating material to cover the lower electrodes to form a first insulating layer and depositing a sacrificial material thereon, performing etching, to create cavities and a channel-shaped sacrificial layer to communicate the cavities; depositing an insulating material on the first insulating layer to form a second insulating layer; partially etching the second insulating layer to form holes; etching and removing the sacrificial layer through the holes to form the cavities and channels; depositing a conductive material on the second insulating layer to plug the holes and form a conductive film; partially etching the conductive film to form upper electrodes and sealing portions which plug the holes; and forming a protective film on the second insulating layer to cover the upper electrodes and the sealing portions.
    • 一种超声换能器制造方法,包括:在绝缘层上沉积导电材料,部分地蚀刻导电材料以形成下电极; 沉积绝缘材料以覆盖下电极以形成第一绝缘层并在其上沉积牺牲材料,执行蚀刻以产生空腔和沟槽状牺牲层以连通空腔; 在所述第一绝缘层上沉积绝缘材料以形成第二绝缘层; 部分蚀刻第二绝缘层以形成孔; 通过孔蚀刻和去除牺牲层以形成空腔和通道; 在第二绝缘层上沉积导电材料以堵塞孔并形成导电膜; 部分地蚀刻导电膜以形成上电极和堵塞孔的密封部分; 以及在所述第二绝缘层上形成保护膜以覆盖所述上电极和所述密封部。