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    • 4. 发明授权
    • Semiconductor device having a retrograde dopant profile in a channel region
    • 半导体器件在沟道区域具有逆向掺杂物分布
    • US07297994B2
    • 2007-11-20
    • US11072142
    • 2005-03-04
    • Karsten WieczorekManfred HorstmannRolf Stephan
    • Karsten WieczorekManfred HorstmannRolf Stephan
    • H10L29/00H01L29/80
    • H01L21/823807H01L29/1033H01L29/105H01L29/1054H01L29/6659
    • An epitaxially grown channel layer is provided on a well structure after ion implantation steps and heat treatment steps are performed to establish a required dopant profile in the well structure. The channel layer may be undoped or slightly doped, as required, so that the finally obtained dopant concentration in the channel layer is significantly reduced compared to a conventional device to thereby provide a retrograde dopant profile in a channel region of a field effect transistor. Additionally, a barrier diffusion layer may be provided between the well structure and the channel layer to reduce up-diffusion during any heat treatments carried out after the formation of the channel layer. The final dopant profile in the channel region may be adjusted by the thickness of the channel layer, the thickness and the composition of the diffusion barrier layer and any additional implantation steps to introduce dopant atoms in the channel layer.
    • 在离子注入步骤之后在阱结构上提供外延生长的沟道层,并且进行热处理步骤以在阱结构中建立所需的掺杂剂分布。 根据需要,沟道层可以是未掺杂的或稍微掺杂的,使得与常规器件相比,沟道层中最终获得的掺杂剂浓度显着降低,从而在场效应晶体管的沟道区域中提供逆向掺杂物分布。 此外,可以在阱结构和沟道层之间提供阻挡扩散层,以在形成沟道层之后进行的任何热处理期间减小向上扩散。 可以通过沟道层的厚度,扩散阻挡层的厚度和组成以及在沟道层中引入掺杂剂原子的任何额外的注入步骤来调整沟道区中的最终掺杂物分布。
    • 5. 发明授权
    • Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device
    • 具有不同金属硅化物部分的半导体器件和用于制造半导体器件的方法
    • US07217657B2
    • 2007-05-15
    • US10260926
    • 2002-09-30
    • Karsten WieczorekManfred HorstmannRolf Stephan
    • Karsten WieczorekManfred HorstmannRolf Stephan
    • H01L21/44
    • H01L29/665H01L21/28052H01L21/823418H01L21/823443H01L29/4933
    • A method is disclosed in which differing metal layers are sequentially deposited on silicon-containing regions so that the type and thickness of the metal layers may be adapted to specific characteristics of the underlying silicon-containing regions. Subsequently, a heat treatment is performed to convert the metals into metal silicides so as to improve the electrical conductivity of the silicon-containing regions. In this way, silicide portions may be formed that are individually adapted to specific silicon-containing regions so that device performance of individual semiconductor elements or the overall performance of a plurality of semiconductor elements may be significantly improved. Moreover, a semiconductor device is disclosed comprising at least two silicon-containing regions having formed therein differing silicide portions, wherein at least one silicide portion comprises a noble metal.
    • 公开了一种方法,其中不同的金属层依次沉积在含硅区域上,使得金属层的类型和厚度可以适应于下面的含硅区域的特定特性。 随后,进行热处理以将金属转化为金属硅化物,从而提高含硅区域的导电性。 以这种方式,可以形成独立地适应特定的含硅区域的硅化物部分,从而可以显着改善各个半导体元件的器件性能或多个半导体元件的整体性能。 此外,公开了一种半导体器件,其包括至少两个其中形成有不同硅化物部分的含硅区域,其中至少一个硅化物部分包括贵金属。