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1. 发明申请

US20060094238A1 Deposition of tungsten nitride 有权
公开(公告)号：US20060094238A1
公开(公告)日：2006-05-04
申请号：US11305368
申请日：2005-12-16
申请人： Karl Levy , Junghwan Sung , Kaihan Ashtiani , James Fair , Joshua Collins , Juwen Gao
发明人： Karl Levy , Junghwan Sung , Kaihan Ashtiani , James Fair , Joshua Collins , Juwen Gao
IPC分类号： H01L21/44
CPC分类号： C23C16/4554 , C23C16/0272 , C23C16/34 , C23C16/45531 , C23C16/45534 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

2. 发明申请

US20050031786A1 Method for reducing tungsten film roughness and improving step coverage 有权
标题翻译：降低钨膜粗糙度和提高台阶覆盖率的方法
公开(公告)号：US20050031786A1
公开(公告)日：2005-02-10
申请号：US10649351
申请日：2003-08-26
申请人： Sang-Hyeob Lee , Karl Levy , Aaron Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan Ashtiani , Junghwan Sung , Lana Chan
发明人： Sang-Hyeob Lee , Karl Levy , Aaron Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan Ashtiani , Junghwan Sung , Lana Chan
IPC分类号： H01L21/283 , H01L21/285 , H01L21/768 , C23C16/00
CPC分类号： H01L21/28562 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877 , Y10S438/902
摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
摘要翻译：通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。该方法的每个循环提供了一个或多个钨膜的单层。该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。

3. 发明授权

US08409985B2 Methods for growing low-resistivity tungsten for high aspect ratio and small features 有权
标题翻译：生长低电阻率钨用于高纵横比和小特征的方法
公开(公告)号：US08409985B2
公开(公告)日：2013-04-02
申请号：US13095734
申请日：2011-04-27
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

4. 发明授权

US07955972B2 Methods for growing low-resistivity tungsten for high aspect ratio and small features 有权
标题翻译：生长低电阻率钨用于高纵横比和小特征的方法
公开(公告)号：US07955972B2
公开(公告)日：2011-06-07
申请号：US12030645
申请日：2008-02-13
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

5. 发明申请

US20080254623A1 METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES 有权
标题翻译：用于生长高电阻率和小特征的低电阻电阻的方法
公开(公告)号：US20080254623A1
公开(公告)日：2008-10-16
申请号：US12030645
申请日：2008-02-13
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得大约14微米的电阻率。

6. 发明申请

US20110223763A1 METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES 有权
标题翻译：用于生长高电阻率和小特征的低电阻电阻的方法
公开(公告)号：US20110223763A1
公开(公告)日：2011-09-15
申请号：US13095734
申请日：2011-04-27
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/768
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

7. 发明申请

US20110151678A1 NOVEL GAP FILL INTEGRATION 有权
标题翻译：新的GAP填充整合
公开(公告)号：US20110151678A1
公开(公告)日：2011-06-23
申请号：US12964110
申请日：2010-12-09
申请人： Kaihan Ashtiani , Michael Wood , John Drewery , Naohiro Shoda , Bart van Schravendijk , Lakshminarayana Nittala , Nerissa Draeger
发明人： Kaihan Ashtiani , Michael Wood , John Drewery , Naohiro Shoda , Bart van Schravendijk , Lakshminarayana Nittala , Nerissa Draeger
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02208 , H01L21/76224
摘要： Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps.
摘要翻译：提供了包括沉积可流动氧化物膜和高密度等离子体化学气相沉积氧化物（HDP氧化物）膜的新型间隙填充方案。根据各种实施方案，可流动的氧化物膜可以用作牺牲层和/或用作自底向上间隙填充的材料。在某些实施例中，填充间隙的顶表面是HDP氧化物膜。所得到的填充间隙可以仅用HDP氧化物膜或HDP氧化物和可流动氧化物膜的组合填充。这些方法提供了改进的顶帽减少并且避免了限定间隙的结构的限制。

8. 发明授权

US08409987B2 Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics 有权
标题翻译：沉积具有低电阻率和坚固的微粘附特性的薄钨膜的方法
公开(公告)号：US08409987B2
公开(公告)日：2013-04-02
申请号：US13244016
申请日：2011-09-23
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michal Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michal Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

9. 发明申请

US20100159694A1 METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS 有权
标题翻译：沉积具有低电阻率和稳定的微粘结特性的薄膜的方法
公开(公告)号：US20100159694A1
公开(公告)日：2010-06-24
申请号：US12407541
申请日：2009-03-19
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/285 , B05C11/00
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

10. 发明授权

US08846536B2 Flowable oxide film with tunable wet etch rate 有权
标题翻译：具有可调湿法蚀刻速率的可流动氧化膜
公开(公告)号：US08846536B2
公开(公告)日：2014-09-30
申请号：US13493936
申请日：2012-06-11
申请人： Nerissa Draeger , Karena Shannon , Bart van Schravendijk , Kaihan Ashtiani
发明人： Nerissa Draeger , Karena Shannon , Bart van Schravendijk , Kaihan Ashtiani
IPC分类号： H01L21/311
CPC分类号： H01L21/0234 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/02299 , H01L21/02337 , H01L21/02343 , H01L21/02348 , H01L21/31111
摘要： Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.
摘要翻译：本文提供了集成兼容的介电膜以及它们的沉积和修饰方法。根据各种实施方案，该方法可以包括以集成兼容的处理方法沉积靶向特定膜特性的可流动电介质膜和/或对这些性质的修饰。在某些实施方案中，提供了沉积和修饰具有可调湿蚀刻速率和其它性质的可流动介电膜的方法。湿法蚀刻速率可以通过整合兼容的处理工艺进行整合。处理过程的实例包括等离子体暴露和紫外线照射。

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