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1. 发明申请

US20060169576A1 Physical vapor deposition plasma reactor with VHF source power applied through the workpiece 有权
标题翻译：具有通过工件施加VHF源功率的物理气相沉积等离子体反应器
公开(公告)号：US20060169576A1
公开(公告)日：2006-08-03
申请号：US11140514
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei Wang , Semyon Sherstinsky
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei Wang , Semyon Sherstinsky
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要翻译：物理气相沉积等离子体反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑基座，以及耦合到该室的真空泵，耦合到该室的工艺气体入口和工艺气体源耦合到处理气体入口，在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座的RF等离子体源功率发生器，其频率在约60MHz和 81MHz，以及RF等离子体偏置功率发生器，其耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

2. 发明申请

US20060002053A1 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
公开(公告)号：US20060002053A1
公开(公告)日：2006-01-05
申请号：US11221169
申请日：2005-09-07
申请人： Karl Brown , Semyon Sherstinsky , Wei Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01T23/00
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.

3. 发明申请

US20050219786A1 Detachable electrostatic chuck 有权
标题翻译：可拆卸静电卡盘
公开(公告)号：US20050219786A1
公开(公告)日：2005-10-06
申请号：US10816152
申请日：2004-03-31
申请人： Karl Brown , Nora Arellano , Semyon Sherstinsky , Allen Lau , Cheng-Hsiung Tsai , Vineet Mehta , Steve Sansoni , Wei Wang
发明人： Karl Brown , Nora Arellano , Semyon Sherstinsky , Allen Lau , Cheng-Hsiung Tsai , Vineet Mehta , Steve Sansoni , Wei Wang
IPC分类号： H01H1/00 , H01L21/68 , H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.
摘要翻译：静电卡盘能够附着在处理室中的基座上。卡盘具有包括具有嵌入电极的陶瓷体的静电压盖。陶瓷体具有带有环形周边的基板支撑表面。卡盘还具有作为陶瓷材料和金属的复合材料的静电压盘下面的底板。基板具有延伸超过陶瓷体周边的环形凸缘。基板和静电圆盘可以由具有壳体的支撑基座支撑，并且环形凸缘从壳体向外延伸以附接到基板的环形凸缘。还可以提供具有嵌入式传热流体通道的传热板。

4. 发明申请

US20060169578A1 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas 有权
标题翻译：用于等离子体增强的物理气相沉积的装置，其具有通过工件以较轻铜载体施加的RF源功率
公开(公告)号：US20060169578A1
公开(公告)日：2006-08-03
申请号：US11140513
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.
摘要翻译：在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近，所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向晶片支撑座的表面。

5. 发明申请

US20060172536A1 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece 审中-公开
标题翻译：用于通过工件施加RF源功率的等离子体增强物理气相沉积的装置
公开(公告)号：US20060172536A1
公开(公告)日：2006-08-03
申请号：US11140544
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
IPC分类号： H01L21/44
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, and maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma. The frequency of the RF source power is sufficiently high to limit ion energy near the surface of the wafer so that the principal portion of the power provides plasma ion generation. The method further includes maintaining the RF source power at a sufficiently high level to deposit a conformal layer of copper on vertical and horizontal surfaces of the workpiece.
摘要翻译：在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近，将载气引入真空室，将目标溅射等离子体保持在目标处，以产生包含从目标流向晶片支撑基座的铜原子和铜离子中的至少一种的气流，用于气相沉积，并保持通过将等离子体RF源功率电容耦合到晶片溅射等离子体，在晶片支撑基座附近的晶片溅射等离子体。 RF源功率的频率足够高以限制晶片表面附近的离子能量，使得功率的主要部分提供等离子体离子产生。该方法还包括将RF源功率保持在足够高的水平以将铜的共形层沉积在工件的垂直和水平表面上。

6. 发明申请

US20070193982A1 Physical vapor deposition plasma reactor with arcing suppression 有权
标题翻译：具有电弧抑制的物理气相沉积等离子体反应器
公开(公告)号：US20070193982A1
公开(公告)日：2007-08-23
申请号：US11438496
申请日：2006-05-22
申请人： Karl Brown , Semyon Sherstinksy , Vineet Mehta , Wei Wang , John Pipitone , Kurt Ahmann , Armando Valverde
发明人： Karl Brown , Semyon Sherstinksy , Vineet Mehta , Wei Wang , John Pipitone , Kurt Ahmann , Armando Valverde
IPC分类号： B23K9/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal. A removable shield protects the sidewall and is grounded by plural compressible conductive tabs dispersed at generally uniform intervals on the annular flange and engaging a bottom edge of the shield whenever the retractable wafer support pedestal is in an unretracted position, each of the uniform intervals being less than a wavelength corresponding to the frequency of the RF plasma source power generator.
摘要翻译：物理气相沉积反应器包括具有侧壁的真空室，天花板和靠近室的地板附近的可缩回的晶片支撑基座，以及耦合到室的真空泵，所述可缩回晶片支撑基座具有内部电极和接地基座具有从基座延伸的导电环形凸缘。天花板上的金属溅射靶由高电压直流电源供电。反应器具有RF等离子体源功率发生器，其具有适于激发动电子的频率，耦合到溅射靶或底座的内部电极。可拆卸的屏蔽件保护侧壁并且通过在环形凸缘上以大致均匀的间隔分散的多个可压缩导电片接地，并且每当可缩回的晶片支撑基座处于未受损的位置时，接合屏蔽件的底部边缘，每个均匀间隔较小比对应于RF等离子体源发生器的频率的波长。

7. 发明授权

US06652713B2 Pedestal with integral shield 有权
公开(公告)号：US06652713B2
公开(公告)日：2003-11-25
申请号：US09927747
申请日：2001-08-09
申请人： Karl Brown , Vineet Mehta , See-Eng Phan , Semyon Sherstinsky , Allen Lau
发明人： Karl Brown , Vineet Mehta , See-Eng Phan , Semyon Sherstinsky , Allen Lau
IPC分类号： H05H100
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32623
摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

8. 发明授权

US07480129B2 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
标题翻译：用于在处理室中支撑基板的可拆卸静电卡盘
公开(公告)号：US07480129B2
公开(公告)日：2009-01-20
申请号：US11221169
申请日：2005-09-07
申请人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.
摘要翻译：可拆卸的静电卡盘可以附接到处理室中的基座。静电吸盘具有包括覆盖至少一个电极和前侧表面的电介质的静电压盘，用于接收衬底。卡盘的背面具有可以是D形台面的中心突起，以便于与基座中的配合腔体对准。突起还可以具有不对称偏移的孔，其进一步辅助对准，并且还用于接收电极端子柱和气体管。具有嵌入式传热流体通道的传热板弹簧加载在基座上以压靠卡盘以获得良好的热传递。

9. 发明授权

US07252737B2 Pedestal with integral shield 有权
标题翻译：带整体护罩的基座
公开(公告)号：US07252737B2
公开(公告)日：2007-08-07
申请号：US10819891
申请日：2004-04-06
申请人： Karl Brown , Vineet Mehta , See-Eng Phan , Semyon Sherstinsky , Allen Lau
发明人： Karl Brown , Vineet Mehta , See-Eng Phan , Semyon Sherstinsky , Allen Lau
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32623
摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.
摘要翻译：通常，提供了用于支撑衬底的衬底支撑构件。在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。主体具有适于支撑基板和下表面的上表面。下屏蔽件具有中心部分和唇部。唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。唇缘与身体间隔开设置。下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。

10. 发明授权

US06726805B2 Pedestal with integral shield 有权
标题翻译：带整体护罩的基座
公开(公告)号：US06726805B2
公开(公告)日：2004-04-27
申请号：US10128983
申请日：2002-04-24
申请人： Karl Brown , Vineet Mehta , See-Eng Phan , Semyon Sherstinsky , Allen Lau
发明人： Karl Brown , Vineet Mehta , See-Eng Phan , Semyon Sherstinsky , Allen Lau
IPC分类号： H05H100
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32623
摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.
摘要翻译：通常，提供了用于支撑衬底的衬底支撑构件。在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。主体具有适于支撑基板和下表面的上表面。下屏蔽件具有中心部分和唇部。唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。唇缘与身体间隔开设置。下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。

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