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1. 发明申请

US20060169578A1 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas 有权
标题翻译：用于等离子体增强的物理气相沉积的装置，其具有通过工件以较轻铜载体施加的RF源功率
公开(公告)号：US20060169578A1
公开(公告)日：2006-08-03
申请号：US11140513
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.
摘要翻译：在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近，所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向晶片支撑座的表面。

2. 发明申请

US20060172536A1 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece 审中-公开
标题翻译：用于通过工件施加RF源功率的等离子体增强物理气相沉积的装置
公开(公告)号：US20060172536A1
公开(公告)日：2006-08-03
申请号：US11140544
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
IPC分类号： H01L21/44
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, and maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma. The frequency of the RF source power is sufficiently high to limit ion energy near the surface of the wafer so that the principal portion of the power provides plasma ion generation. The method further includes maintaining the RF source power at a sufficiently high level to deposit a conformal layer of copper on vertical and horizontal surfaces of the workpiece.
摘要翻译：在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近，将载气引入真空室，将目标溅射等离子体保持在目标处，以产生包含从目标流向晶片支撑基座的铜原子和铜离子中的至少一种的气流，用于气相沉积，并保持通过将等离子体RF源功率电容耦合到晶片溅射等离子体，在晶片支撑基座附近的晶片溅射等离子体。 RF源功率的频率足够高以限制晶片表面附近的离子能量，使得功率的主要部分提供等离子体离子产生。该方法还包括将RF源功率保持在足够高的水平以将铜的共形层沉积在工件的垂直和水平表面上。

3. 发明申请

US20060169576A1 Physical vapor deposition plasma reactor with VHF source power applied through the workpiece 有权
标题翻译：具有通过工件施加VHF源功率的物理气相沉积等离子体反应器
公开(公告)号：US20060169576A1
公开(公告)日：2006-08-03
申请号：US11140514
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei Wang , Semyon Sherstinsky
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei Wang , Semyon Sherstinsky
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要翻译：物理气相沉积等离子体反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑基座，以及耦合到该室的真空泵，耦合到该室的工艺气体入口和工艺气体源耦合到处理气体入口，在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座的RF等离子体源功率发生器，其频率在约60MHz和 81MHz，以及RF等离子体偏置功率发生器，其耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

4. 发明授权

US07820020B2 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas 有权
标题翻译：用于等离子体增强的物理气相沉积的装置，其具有通过工件以较轻铜载体施加的RF源功率
公开(公告)号：US07820020B2
公开(公告)日：2010-10-26
申请号：US11140513
申请日：2005-05-25
申请人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
发明人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.
摘要翻译：在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近，所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向晶片支撑座的表面。

5. 发明授权

US07244344B2 Physical vapor deposition plasma reactor with VHF source power applied through the workpiece 有权
标题翻译：具有通过工件施加VHF源功率的物理气相沉积等离子体反应器
公开(公告)号：US07244344B2
公开(公告)日：2007-07-17
申请号：US11140514
申请日：2005-05-25
申请人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei W. Wang , Semyon Sherstinsky
发明人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei W. Wang , Semyon Sherstinsky
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要翻译：物理气相沉积等离子体反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑基座，以及耦合到该室的真空泵，耦合到该室的工艺气体入口和工艺气体源耦合到处理气体入口，在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座的RF等离子体源功率发生器，其频率在约60MHz和 81MHz，以及RF等离子体偏置功率发生器，其耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

6. 发明申请

US20060073690A1 Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
标题翻译：用于通过工件施加的源极和偏置功率频率的金属等离子体气相沉积和再溅射的装置和方法
公开(公告)号：US20060073690A1
公开(公告)日：2006-04-06
申请号：US11052012
申请日：2005-02-03
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , C23C14/345 , C23C14/354 , H01J37/32706 , H01J37/3408 , H01L21/76843 , H01L21/76844 , H01L21/76865
摘要： Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
摘要翻译：在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。将工艺气体引入所述真空室。目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

7. 发明申请

US20060191876A1 Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron 有权
标题翻译：使用磁控管施加到靶的RF等离子体源功率进行物理气相沉积的方法
公开(公告)号：US20060191876A1
公开(公告)日：2006-08-31
申请号：US11222248
申请日：2005-09-07
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： B23K15/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： The invention concerns a method of performing physical vapor deposition in a reactor chamber on a workpiece positioned on a workpiece support facing the metal sputter target. The method includes sputtering atoms from the metal sputter target by applying a low level of target bias power to the metal sputter target to produce a correspondingly low metal deposition rate on the workpiece. The method further includes ionizing the atoms sputtered from the metal sputter target to an ionization fraction in excess of about 50% by applying a high level of VHF source power to the metal sputter target through a solid large diameter RF feed rod that engages the metal sputter target. The low level of target bias power can be as low as about 500 Watts although it may range up to about 2500 Watts. Preferably, the target bias power is D.C. power. The RF feed rod may be threadably engaged into a receptacle in the center of a top surface of the metal sputter target. Preferably, the method further includes electrostatically clamping the workpiece to the workpiece support.
摘要翻译：本发明涉及在位于面向金属溅射靶的工件支架上的工件上的反应器室中进行物理气相沉积的方法。该方法包括通过向金属溅射靶施加低水平的目标偏压功率来从金属溅射靶溅射原子，以在工件上产生相应较低的金属沉积速率。该方法还包括通过将金属溅射物质接合的固体大直径RF进料棒，通过向金属溅射靶施加高水平的VHF源功率，将从金属溅射靶溅射的原子离子化成电离分数超过约50％目标。目标偏置功率的低水平可以低至约500瓦，尽管其范围可高达约2500瓦。优选地，目标偏置功率为直流功率。 RF馈送杆可以螺纹地接合在金属溅射靶的顶表面的中心的插座中。优选地，该方法还包括将工件静电夹持到工件支撑件。

8. 发明申请

US20060169582A1 Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron 有权
公开(公告)号：US20060169582A1
公开(公告)日：2006-08-03
申请号：US11222231
申请日：2005-09-07
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.

9. 发明申请

US20070193982A1 Physical vapor deposition plasma reactor with arcing suppression 有权
标题翻译：具有电弧抑制的物理气相沉积等离子体反应器
公开(公告)号：US20070193982A1
公开(公告)日：2007-08-23
申请号：US11438496
申请日：2006-05-22
申请人： Karl Brown , Semyon Sherstinksy , Vineet Mehta , Wei Wang , John Pipitone , Kurt Ahmann , Armando Valverde
发明人： Karl Brown , Semyon Sherstinksy , Vineet Mehta , Wei Wang , John Pipitone , Kurt Ahmann , Armando Valverde
IPC分类号： B23K9/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal. A removable shield protects the sidewall and is grounded by plural compressible conductive tabs dispersed at generally uniform intervals on the annular flange and engaging a bottom edge of the shield whenever the retractable wafer support pedestal is in an unretracted position, each of the uniform intervals being less than a wavelength corresponding to the frequency of the RF plasma source power generator.
摘要翻译：物理气相沉积反应器包括具有侧壁的真空室，天花板和靠近室的地板附近的可缩回的晶片支撑基座，以及耦合到室的真空泵，所述可缩回晶片支撑基座具有内部电极和接地基座具有从基座延伸的导电环形凸缘。天花板上的金属溅射靶由高电压直流电源供电。反应器具有RF等离子体源功率发生器，其具有适于激发动电子的频率，耦合到溅射靶或底座的内部电极。可拆卸的屏蔽件保护侧壁并且通过在环形凸缘上以大致均匀的间隔分散的多个可压缩导电片接地，并且每当可缩回的晶片支撑基座处于未受损的位置时，接合屏蔽件的底部边缘，每个均匀间隔较小比对应于RF等离子体源发生器的频率的波长。

10. 发明申请

US20060073700A1 Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece 有权
标题翻译：在等离子体中的集成电路中形成阻挡层的方法，其中源极和偏置功率频率通过工件施加
公开(公告)号：US20060073700A1
公开(公告)日：2006-04-06
申请号：US11052010
申请日：2005-02-03
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/35 , C23C14/351 , H01J37/32706 , H01L21/2855 , H01L21/76844 , H01L21/76862 , H01L21/76865
摘要： A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
摘要翻译：在集成电路中通过在室的顶部附近提供金属靶并且在室的底部附近面向靶的晶片支撑台座，在集成电路中形成阻挡层。将工艺气体引入真空室。目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

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