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1. 发明申请

US20070035532A1 BACKPLANES FOR DISPLAY APPLICATIONS, AND COMPONENTS FOR USE THEREIN 有权
标题翻译：显示应用的背板及其使用的组件
公开(公告)号：US20070035532A1
公开(公告)日：2007-02-15
申请号：US11461255
申请日：2006-07-31
申请人： Karl Amundson , Yu Chen , Kevin Denis , Paul Drzaic , Peter Kazlas , Andrew Ritenour
发明人： Karl Amundson , Yu Chen , Kevin Denis , Paul Drzaic , Peter Kazlas , Andrew Ritenour
IPC分类号： G09G5/00
CPC分类号： H01L27/12 , G09G3/2011 , G09G3/344 , G09G2300/043 , G09G2310/0262 , G09G2310/027 , G09G2310/0297 , G09G2320/0209 , H01L27/124 , H01L27/1285 , H01L27/1292 , H01L29/41733 , H01L29/42384
摘要： A thin-film transistor includes a gate electrode having a first gate electrode edge and a second gate electrode edge opposite the first gate electrode edge. The TFT also includes a drain electrode having a first drain electrode edge that overlaps the first gate electrode edge, and a second drain electrode edge that overlaps the second gate electrode edge. A method for fabricating a diode array for use in a display includes deposition of a conductive layer adjacent to a substrate, deposition of a doped semiconductor layer adjacent to the substrate, and deposition of an undoped semiconductor layer adjacent to the substrate. A display pixel unit provides reduced capacitative coupling between a pixel electrode and a source line. The unit includes a transistor, the pixel electrode, and the source line. The source line includes an extension that provides a source for the transistor. A patterned conductive portion is disposed adjacent to the source line. Another display pixel unit provides reduced pixel electrode voltage shifts. The unit includes a transistor, a pixel electrode, a source line and a balance line. The invention also provides a driver for driving a display provided with such a balance line.
摘要翻译：薄膜晶体管包括具有第一栅电极边缘和与第一栅电极边缘相对的第二栅电极边缘的栅电极。 TFT还包括具有与第一栅电极边缘重叠的第一漏电极边缘和与第二栅极边缘重叠的第二漏电极边缘的漏电极。用于制造用于显示器的二极管阵列的方法包括：与衬底相邻的导电层的沉积，与衬底相邻的掺杂半导体层的沉积以及与衬底相邻的未掺杂的半导体层的沉积。显示像素单元在像素电极和源极线之间提供减小的电容耦合。该单元包括晶体管，像素电极和源极线。源极线包括提供晶体管源极的扩展。图案化导电部分邻近源极线设置。另一显示像素单元提供减小的像素电极电压偏移。该单元包括晶体管，像素电极，源极线和平衡线。本发明还提供一种用于驱动具有这种平衡线的显示器的驱动器。

2. 发明申请

US20070069247A1 ELECTRO-OPTIC DISPLAYS, AND COMPONENTS FOR USE THEREIN 失效
标题翻译：电子显示屏及其使用的组件
公开(公告)号：US20070069247A1
公开(公告)日：2007-03-29
申请号：US11560459
申请日：2006-11-16
申请人： Karl Amundson , Andrew Ritenour , Gregg Duthaler , Paul Drzaic , Yu Chen , Peter Kazlas
发明人： Karl Amundson , Andrew Ritenour , Gregg Duthaler , Paul Drzaic , Yu Chen , Peter Kazlas
IPC分类号： H01L29/768
CPC分类号： G02F1/167 , G02F1/1368 , G02F2001/1672 , H01L21/02104 , H01L21/30604 , H01L21/308 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1259 , H01L27/127 , H01L27/1285 , H01L27/1292 , H01L29/41733 , H01L29/42384 , H01L29/78603 , H01L29/78666 , H01L33/48
摘要： An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).
摘要翻译：电光显示器包括基板（100），基本上设置在基板（100）上的一个平面中的非线性装置（102），连接到非线性装置（102）的像素电极（106）光学介质（110）和与所述电光介质（110）相对的所述像素电极（106）的公共电极（112）。显示器的各个部件的模量被布置成使得当显示器弯曲时，中性轴线或中性平面基本上位于非线性装置（102）的平面中。

3. 发明申请

US20050078099A1 ELECTRO-OPTIC DISPLAYS, AND COMPONENTS FOR USE THEREIN 有权
标题翻译：电子显示屏及其使用的组件
公开(公告)号：US20050078099A1
公开(公告)日：2005-04-14
申请号：US10904160
申请日：2004-10-27
申请人： Karl Amundson , Andrew Ritenour , Gregg Duthaler , Paul Drzaic , Yu Chen , Peter Kazlas
发明人： Karl Amundson , Andrew Ritenour , Gregg Duthaler , Paul Drzaic , Yu Chen , Peter Kazlas
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L29/417 , H01L29/423 , G02F1/1335 , G09G5/00
CPC分类号： G02F1/167 , G02F1/1368 , G02F2001/1672 , H01L21/02104 , H01L21/30604 , H01L21/308 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1259 , H01L27/127 , H01L27/1285 , H01L27/1292 , H01L29/41733 , H01L29/42384 , H01L29/78603 , H01L29/78666 , H01L33/48
摘要： An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).
摘要翻译：电光显示器包括基板（100），基本上设置在基板（100）上的一个平面中的非线性装置（102），连接到非线性装置（102）的像素电极（106）光学介质（110）和与所述电光介质（110）相对的所述像素电极（106）的公共电极（112）。显示器的各个部件的模量被布置成使得当显示器弯曲时，中性轴线或中性平面基本上位于非线性装置（102）的平面中。

4. 发明申请

US20060223282A1 PROCESSES FOR FORMING BACKPLANES FOR ELECTRO-OPTIC DISPLAYS 失效
公开(公告)号：US20060223282A1
公开(公告)日：2006-10-05
申请号：US11424258
申请日：2006-06-15
申请人： Karl Amundson , Guy Danner , Gregg Duthaler , Peter Kazlas , Yu Chen , Kevin Denis , Nathan Kane , Andrew Ritenour
发明人： Karl Amundson , Guy Danner , Gregg Duthaler , Peter Kazlas , Yu Chen , Kevin Denis , Nathan Kane , Andrew Ritenour
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , B60C23/04 , G02F1/133305 , G02F1/1362 , G02F1/167 , G02F2001/13613 , H01L27/1214 , H01L27/1288 , H01L29/66765 , H01L29/78603
摘要： A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.

5. 发明申请

US20050067656A1 Process for fabricating thin film transistors 有权
标题翻译：制造薄膜晶体管的工艺
公开(公告)号：US20050067656A1
公开(公告)日：2005-03-31
申请号：US10919657
申请日：2004-08-17
申请人： Kevin Denis , Yu Chen , Paul Drzaic , Joseph Jacobson , Peter Kazlas
发明人： Kevin Denis , Yu Chen , Paul Drzaic , Joseph Jacobson , Peter Kazlas
IPC分类号： H01L21/336 , H01L29/786 , H01L21/00 , H01L21/84 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/66765 , H01L29/78603
摘要： Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.
摘要翻译：晶体管通过在包含聚亚苯基聚酰亚胺的衬底上沉积至少一层半导体材料形成。在用于形成晶体管的工艺期间，衬底允许使用超过300℃的处理温度，从而允许形成高质量的硅半导体层。该基板也具有低的热膨胀系数，其与硅的热膨胀系数非常接近，从而减少硅层破裂或分层的任何趋势。

6. 发明申请

US20070085818A1 USE OF A STORAGE CAPACITOR TO ENHANCE THE PERFORMANCE OF AN ACTIVE MATRIX DRIVEN ELECTRONIC DISPLAY 有权
标题翻译：使用存储电容器来提高有源矩阵驱动电子显示器的性能
公开(公告)号：US20070085818A1
公开(公告)日：2007-04-19
申请号：US11612509
申请日：2006-12-19
申请人： Karl Amundson , Paul Drzaic , Peter Kazlas
发明人： Karl Amundson , Paul Drzaic , Peter Kazlas
IPC分类号： G09G3/36
CPC分类号： G09G3/344 , G02F1/1334 , G02F1/136213 , G02F1/167 , G02F1/172 , G09G2300/0809 , G09G2300/0842 , G09G2310/0262 , G09G2320/0252
摘要： A system and method of use of a storage capacitor to improve the appearance and addressing characteristics of an electronically driven display. The capacitor is formed by the overlap of portions of electrodes used to address different pixels, or by the overlap of an addressing line and a conductor. An insulator layer situated between the capacitor electrodes can be the same insulator layer present in an FET transistor used to address the pixel. Methods of use of capacitors to achieve improved display addressing are disclosed.
摘要翻译：一种使用存储电容器来改善电子显示器的外观和寻址特性的系统和方法。电容器由用于寻址不同像素的电极的部分的重叠，或通过寻址线和导体的重叠形成。位于电容器电极之间的绝缘体层可以是用于解决像素的FET晶体管中存在的相同的绝缘体层。公开了使用电容器实现改进的显示寻址的方法。

7. 发明授权

US06498114B1 Method for forming a patterned semiconductor film 失效
标题翻译：用于形成图案化半导体膜的方法
公开(公告)号：US06498114B1
公开(公告)日：2002-12-24
申请号：US09651710
申请日：2000-08-31
申请人： Karl Amundson , Paul S. Drzaic , Jianna Wang , Gregg Duthaler , Peter Kazlas
发明人： Karl Amundson , Paul S. Drzaic , Jianna Wang , Gregg Duthaler , Peter Kazlas
IPC分类号： H01L2131
CPC分类号： H01L51/0016 , B41J3/4076 , G02F1/1334 , G02F1/1345 , G02F1/1362 , H01L27/28 , H01L51/0002 , H01L51/0004 , H01L51/0014 , H01L51/0015 , H01L51/0019 , H01L51/0508 , H01L51/0512 , H01L51/0516 , H01L51/0541 , H01L51/0545
摘要： A process for forming a pattern in a semiconductor film is provided. The process comprises the steps of: providing a substrate; providing an organic semiconductor film adjacent the substrate; and providing a destructive agent adjacent selected portions of the organic semiconductor film, the destructive agent changing a property of selected portions of the organic semiconductor film substantially through the full thickness of the organic semiconductor film such that the property of the selected portions of the organic semiconductor film differs from the property of remaining portions of the organic semiconductor film. A method for manufacturing a transistor comprises the steps of: providing a substrate; providing a gate electrode adjacent the substrate; providing a gate dielectric adjacent the substrate and the gate electrode; providing a source electrode and a drain electrode adjacent the gate dielectric; providing a mask adjacent the gate dielectric in a pattern such that the source electrode, the drain electrode, and a portion of the gate dielectric remain exposed; and providing a semiconductor layer comprising one of an organic semiconductor and a plurality of inorganic colloidal particles, adjacent the source electrode, the drain electrode, the portion of the gate dielectric and the mask, thereby forming the transistor, the semiconductor layer having a thickness less than a thickness of the mask.
摘要翻译：提供了一种在半导体膜中形成图案的工艺。该方法包括以下步骤：提供衬底; 提供邻近所述衬底的有机半导体膜; 并且在所述有机半导体膜的选定部分附近提供破坏性试剂，所述破坏剂基本上改变所述有机半导体膜的全部厚度以改变所述有机半导体膜的选定部分的性质，使得所述有机半导体膜的选定部分的性质膜与有机半导体膜的剩余部分的性质不同。一种制造晶体管的方法，包括以下步骤：提供衬底; 在所述衬底附近提供栅电极; 在所述衬底和所述栅极附近提供栅极电介质; 提供邻近栅极电介质的源电极和漏电极; 以图案提供与栅极电介质相邻的掩模，使得源电极，漏电极和栅电介质的一部分保持暴露; 并且提供包括有机半导体和多个无机胶体粒子之一的半导体层，与源电极，漏电极，栅极电介质的部分和掩模相邻，从而形成晶体管，半导体层的厚度较小比掩模的厚度。

8. 发明授权

US06521489B2 Preferred methods for producing electrical circuit elements used to control an electronic display 失效
公开(公告)号：US06521489B2
公开(公告)日：2003-02-18
申请号：US10128014
申请日：2002-04-23
申请人： Gregg Duthaler , Karl R. Amundson , Paul Drzaic , Peter Kazlas , Jianna Wang
发明人： Gregg Duthaler , Karl R. Amundson , Paul Drzaic , Peter Kazlas , Jianna Wang
IPC分类号： H01L2100
CPC分类号： H01L21/00 , B33Y80/00 , B82Y30/00 , H01L27/32 , H01L51/0004 , H01L51/0516 , H01L51/0545 , H01L51/42 , H01L51/5012
摘要： Systems and methods for producing thin film transistor structures useful in controlling electronic displays. Thin film transistors are fabricated using all-additive methods including printing techniques, soft lithography and material deposition methods. The thin film transistors can be deposited with the gate on the bottom or on the top of the structure. The deposition methods include the possibility of isolating nearly completely the transistor structure from the electronic display devices, so as to minimize or eliminate deleterious interactions therebetween.

9. 发明申请

US20050054121A1 Laser transfer article and method of making 有权
标题翻译：激光转印制品及其制作方法
公开(公告)号：US20050054121A1
公开(公告)日：2005-03-10
申请号：US10935461
申请日：2004-09-07
申请人： Erik Handy , Joseph Kunze , Peter Kazlas
发明人： Erik Handy , Joseph Kunze , Peter Kazlas
IPC分类号： H01L20060101 , H01L21/00 , H01L21/68 , H01L51/00 , H01L51/40
CPC分类号： H01L21/6835 , H01L51/0013 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2924/0002 , H01L2924/19041 , Y10T428/26 , Y10T428/2839 , Y10T428/2848 , H01L2924/00
摘要： The present invention is directed to methods for transferring pre-formed electronic devices, such as transistors, resistors, capacitors, diodes, semiconductors, inductors, conductors, and dielectrics, and segments of materials, such as magnetic materials and crystalline materials onto a variety of receiving substrates using energetic beam transfer methods. Also provided is a consumable intermediate comprising a transfer substrate and a transfer material coated thereon, wherein the transfer material may be comprised of pre-formed electronic devices or magnetic materials and crystalline materials that may be transferred to a variety of receiving substrates. Aspects of the present invention may also be used to form multi-device electronic components such as sensor devices, electro-optical devices, communications devices, transmit-receive modules, and phased arrays using the consumable intermediates and transfer methods described herein.
摘要翻译：本发明涉及用于将诸如晶体管，电阻器，电容器，二极管，半导体，电感器，导体和电介质的预成型电子器件和诸如磁性材料和结晶材料的材料段转移到各种使用能量束传递方法接收衬底。还提供了包括转印基材和涂覆在其上的转印材料的消耗性中间体，其中转印材料可以由预先形成的电子器件或磁性材料以及可以转移到各种接收基底的结晶材料构成。本发明的各方面也可用于使用本文描述的可消耗的中间体和转移方法来形成诸如传感器装置，电光装置，通信装置，发射 - 接收模块和相控阵列的多装置电子部件。

10. 发明授权

US09045341B2 Storage-stable aqueous solutions of chlorine dioxide and methods for preparing and using them 有权
公开(公告)号：US09045341B2
公开(公告)日：2015-06-02
申请号：US13365912
申请日：2012-02-03
申请人： Thomas Ellsworth McWhorter , Peter Kazlas , Madhu Anand , John Peter Hobbs , Aaron A. Rosenblatt , Robert H. Shay , Barzin Keramati
发明人： Thomas Ellsworth McWhorter , Peter Kazlas , Madhu Anand , John Peter Hobbs , Aaron A. Rosenblatt , Robert H. Shay , Barzin Keramati
IPC分类号： A61L2/18 , C01B11/02
CPC分类号： C01B11/024 , A01N59/00 , A61K33/00 , B65B63/00 , C01B11/022 , C01B11/028 , Y10T428/13 , Y10T428/131 , Y10T428/1334 , Y10T428/1352
摘要： The present invention is for extremely pure solutions of chlorine dioxide, methods for making such solutions and to compositions and methods for storing, shipping and using such solutions. Generally, the chlorine dioxide solutions of the invention are aqueous solutions containing about 2500 ppm or less of total impurities. The chlorine dioxide solution can be prepare by passing dilute highly pure chlorine gas through a bed of substantially solid sodium chlorite and contacting the resulting chlorine dioxide gas with a liquid.

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