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1. 发明授权

US06216941B1 Method for forming high frequency connections to high temperature superconductor circuits and other fragile materials 失效
标题翻译：用于形成与高温超导体电路和其他易碎材料的高频连接的方法
公开(公告)号：US06216941B1
公开(公告)日：2001-04-17
申请号：US09478255
申请日：2000-01-06
申请人： Karen E. Yokoyama , Gershon Akerling , Moshe Sergant
发明人： Karen E. Yokoyama , Gershon Akerling , Moshe Sergant
IPC分类号： B23K3100
CPC分类号： H01L24/81 , H01L24/11 , H01L2224/1147 , H01L2224/13099 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01056 , H01L2924/01057 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , Y10T29/49014
摘要： A method for forming high frequency connections between a fragile chip and a substrate is described, wherein metal is selectively deposited on a surface of a chip and a surface of a substrate, and corresponding patterns of electrically conductive bumps are selectively evaporated on the surface of the chip and the surface of the substrate over the metal layers, to form a pattern of electrically conductive bumps having spongy and dendritic properties, placing the chip in aligned contact with the substrate where each electrically conductive chip bump mates with each corresponding electrically conductive substrate bump, and selectively applying heat and pressure to the chip and substrate causing each chip bump to fuse together with each corresponding substrate bump to form an electromechanical bond.
摘要翻译：描述了在脆性芯片和衬底之间形成高频连接的方法，其中金属被选择性地沉积在芯片的表面和衬底的表面上，并且相应的导电凸块的图案被选择性地蒸发在芯片和衬底在金属层上的表面，以形成具有海绵状和树枝状特性的导电凸块的图案，将芯片与衬底对准接触，其中每个导电芯片凸块与每个相应的导电衬底凸块配合，并且选择性地向芯片和衬底施加热和压力，使得每个芯片凸块与每个相应的衬底凸块熔合在一起以形成机电结合。

2. 发明授权

US06018566A Grid formed with silicon substrate 失效
标题翻译：栅格形成硅衬底
公开(公告)号：US06018566A
公开(公告)日：2000-01-25
申请号：US957541
申请日：1997-10-24
申请人： Carol D. Eberhard , George G. Pinneo , Moshe Sergant
发明人： Carol D. Eberhard , George G. Pinneo , Moshe Sergant
IPC分类号： G21K1/02 , G21K1/00
CPC分类号： G21K1/025
摘要： An X-ray collimator grid is formed within a wafer of monocrystalline silicon material by forming a plurality of spaced parallel elongate slots within a planar surface of a silicon crystal wafer, and forming slats of heavy metal in situs within each of said slots, including squeegeeing the heavy metal into the slots, from particles of heavy metal, each said slat gripping the walls of an associated slot.
摘要翻译：通过在硅晶片的平坦表面内形成多个间隔开的平行细长槽，并在每个所述槽内形成位于所述槽内的重金属板条，形成在单晶硅材料晶片内的X射线准直器栅格，包括刮板重金属进入槽，从重金属的颗粒，每个所述的板条抓住相关槽的壁。

3. 发明授权

US5025451A Two-dimensional integrated laser array 失效
标题翻译：二维集成激光阵列
公开(公告)号：US5025451A
公开(公告)日：1991-06-18
申请号：US424424
申请日：1989-10-20
申请人： Michael Jansen , Moshe Sergant , Szutsun S. Ou , Jaroslava Z. Wilcox , Jane J. Yang , Larry R. Eaton
发明人： Michael Jansen , Moshe Sergant , Szutsun S. Ou , Jaroslava Z. Wilcox , Jane J. Yang , Larry R. Eaton
IPC分类号： G02B6/42 , H01S5/18 , H01S5/40 , H01S5/42
CPC分类号： H01S5/18 , G02B6/4249 , H01S5/42 , H01S5/4006 , H01S5/4031 , H01S5/4068 , H01S5/4075
摘要： A two-dimensional integrated laser array having a plurality of surface-emitting laser arrays and a plurality of waveguides for optically coupling the individual laser arrays together. Each surface-emitting laser array includes a plurality of injection lasers which are evanescently coupled together in order to emit a single beam of light. The coupling provided by the waveguides causes the surface-emitting laser arrays to operate in phase and at the same wavelength as an external master oscillator. Therefore, the surface-emitting laser arrays generate coherent beams of light, which are combined and focused by a micro-lens. The output of the micro-lens is a single, coherent high-power optical beam which is emitted perpendicular to the two-dimensional integrated laser array.
摘要翻译：具有多个表面发射激光器阵列和用于将各个激光器阵列光学耦合在一起的多个波导的二维集成激光器阵列。每个表面发射激光器阵列包括多个注入激光器，其消逝地耦合在一起以发射单个光束。由波导提供的耦合导致表面发射激光器阵列以与外部主振荡器相同的波长工作。因此，表面发射激光器阵列产生相干的光束，其由微透镜组合和聚焦。微透镜的输出是垂直于二维集成激光器阵列发射的单一相干高功率光束。

4. 发明授权

US4896195A Superluminescent diode 失效
标题翻译：超发光二极管
公开(公告)号：US4896195A
公开(公告)日：1990-01-23
申请号：US168067
申请日：1988-03-14
申请人： Michael Jansen , Moshe Sergant , Szutsun S. Ou , Jaroslava Z. Wilcox , Jane J. Yang , Larry R. Eaton
发明人： Michael Jansen , Moshe Sergant , Szutsun S. Ou , Jaroslava Z. Wilcox , Jane J. Yang , Larry R. Eaton
IPC分类号： H01L33/00
CPC分类号： H01L33/0045
摘要： A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.
摘要翻译：一种半导体二极管结构，包括光吸收衬底，有源区和围绕有源区的一对覆层。激光通过倾斜端面被抑制，该倾斜端面将光线向下反射到衬底中，在其被吸收的位置，仅提供通过有源区域的自发发射的光的一次通过。一个公开的实施例具有用于边缘发射光的外耦合的常规端面。另一个实施例包括形成在与倾斜面相邻的衬底的开口中的表面发射小面。又一实施例具有两个倾斜面。一个倾斜小面可以用于将光反射到吸收衬底中，或者两者可以用于通过单独的表面发射面反射光。

5. 发明授权

US4869780A Ion milling method 失效
标题翻译：离子研磨法
公开(公告)号：US4869780A
公开(公告)日：1989-09-26
申请号：US178711
申请日：1988-04-07
申请人： Jane J. J. Yang , William W. Simmons , Michael Jansen , Jaroslava Z. Wilcox , Moshe Sergant
发明人： Jane J. J. Yang , William W. Simmons , Michael Jansen , Jaroslava Z. Wilcox , Moshe Sergant
IPC分类号： H01L21/263
CPC分类号： H01L21/2633
摘要： An ion milling method is disclosed that provides a manufacturing technique for mass producing microscopic surface features using a wide variety of media that includes semiconductors, metals, and glasses. In the preferred embodiment, vertical and 45 degree mirrors are formed simultaneously in semiconductor laser diodes in order to produce monolithic two dimensional arrays of surface emitting lasers. Standard double heterostructure semiconductor laser diodes are first grown on a wafer using metalorganic chemical vapor deposition techniques. An ion milling gun is oriented at a particular angle from the longitudinal axis of the active layer of the laser and emits a stream of atomic particles toward the lasers producing a generally two sided cut or notch that extends downward from the top surface of the semiconductor laser and traverses the active layer. The two sides of the cut consist of a vertical face that is perpendicular to the active layer and an inclined mirror surface that connects to the bottom of the vertical face and the slopes back upward to the top of the laser. Although the preferred utilization of this invention is the production of high power semiconductor laser arrays and subsequent wafer scale integration, the ion milling technique may be employed to construct a wide variety of micro-miniature radiation interfaces, reflectors, transmitters, or absorbers. Virtually any surface that requires a specifically determined configuration of uniform topography of atomic proportions may be produced.
摘要翻译：公开了一种离子铣削方法，其提供使用包括半导体，金属和玻璃的各种介质大规模生产微观表面特征的制造技术。在优选实施例中，在半导体激光二极管中同时形成垂直和45度反射镜，以便产生表面发射激光器的单片二维阵列。首先使用金属有机化学气相沉积技术在晶片上生长标准双异质结半导体激光二极管。离子铣刀从激光器的有源层的纵向轴线以特定的角度定向，并且向激光器发射原子粒子流，从而产生从半导体激光器的顶表面向下延伸的大致双面切割或凹口并穿过活动层。切割的两侧包括垂直于有源层的垂直面和连接到垂直面的底部并且倾斜回到激光顶部的倾斜镜面。虽然本发明的优选利用是生产高功率半导体激光器阵列和随后的晶片级整合，但是可以采用离子铣削技术来构造各种微型微型辐射接口，反射器，发射器或吸收器。实际上可以产生需要具有原子比例的均匀地形的具体确定构型的任何表面。

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