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1. 发明授权

US06721141B1 Spin-valve structure and method for making spin-valve structures 有权
公开(公告)号：US06721141B1
公开(公告)日：2004-04-13
申请号：US09351419
申请日：1999-07-09
申请人： Karen Attenborough , Hans Boeve , Jo De Boeck , Jean-Pierre Celis
发明人： Karen Attenborough , Hans Boeve , Jo De Boeck , Jean-Pierre Celis
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3268 , H01F10/3272 , H01F41/26 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T428/1157 , Y10T428/1193
摘要： The present invention concerns in a first aspect a spin-valve structure having a first and a second free ferromagnetic layer and a spacer layer positioned between the first and second free ferromagnetic layer, and wherein the first free ferromagnetic layer is positioned on a substrate. In a preferred embodiment of the invention, the first free ferromagnetic layer is in direct contact with the surface of the substrate.

2. 发明申请

US20100039856A1 PROGRAMMABLE PHASE-CHANGE MEMORY AND METHOD THEREFOR 有权
标题翻译：可编程相变存储器及其方法
公开(公告)号：US20100039856A1
公开(公告)日：2010-02-18
申请号：US11721432
申请日：2005-12-09
申请人： Hans Boeve , Nick Lambert , Victor Van Acht , Karen Attenborough
发明人： Hans Boeve , Nick Lambert , Victor Van Acht , Karen Attenborough
IPC分类号： G11C11/00 , H01L47/00 , H01L21/00
CPC分类号： H01L27/2472 , H01L45/06 , H01L45/1226 , H01L45/1286
摘要： A non-volatile memory is disclosed. A contiguous layer of phase change material (21; 31; 61; 71; 81) is provided. Proximate the contiguous layer of phase change material (21; 31; 61; 71; 81) is provided a first pair of contacts (22; 32; 62; 72; 82) for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a first region. Also adjacent the contiguous layer is provided a second pair of contacts (22; 32; 62; 72; 82) disposed for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a second region thereof, the second region different from the first region. This pairs of contacts may be disposed on the same side or on opposing sides of the phase change material layer.
摘要翻译：公开了一种非易失性存储器。提供了相继层的相变材料（21; 31; 61; 71; 81）。邻近的相变材料层（21; 31; 61; 71; 81）近似地设置有用于在其间提供电流的第一对触点（22; 32; 62; 72; 82），用于通过用于在第一区域内引起其加热的相变材料层（21; 31; 61; 71; 81）的连续层。还邻近邻接层设置有第二对触点（22; 32; 62; 72; 82），用于在它们之间提供电流，用于通过相变材料层（21; 31; 61）的电流 ; 71; 81），用于在其第二区域内引起加热，所述第二区域与所述第一区域不同。这对触点可以设置在相变材料层的同一侧或相对侧上。

3. 发明授权

US08503226B2 Programmable phase-change memory and method therefor 有权
标题翻译：可编程相变存储器及其方法
公开(公告)号：US08503226B2
公开(公告)日：2013-08-06
申请号：US13481030
申请日：2012-05-25
申请人： Hans Boeve , Niek Lambert , Victor Van Acht , Karen Attenborough
发明人： Hans Boeve , Niek Lambert , Victor Van Acht , Karen Attenborough
IPC分类号： G11C11/00
CPC分类号： H01L27/2472 , H01L45/06 , H01L45/1226 , H01L45/1286
摘要： A non-volatile memory is disclosed. A contiguous layer of phase change material is provided. Proximate the contiguous layer of phase change material is provided a first pair of contacts for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material for inducing heating thereof within a first region. Also adjacent the contiguous layer is provided a second pair of contacts disposed for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material for inducing heating thereof within a second region thereof, the second region different from the first region.
摘要翻译：公开了一种非易失性存储器。提供了相邻层的相变材料。邻近的相变材料层被提供有用于在它们之间提供电流的第一对触点，用于通过邻接的相变材料层的电流用于在第一区域内引起加热。还邻近邻接层设置有第二对触点，用于在它们之间提供电流，用于通过连续的相变材料层的电流，用于在其第二区域内引起其加热，第二区域不同于第一区域地区。

4. 发明授权

US09496490B2 Non-volatile memory 有权
标题翻译：非易失性存储器
公开(公告)号：US09496490B2
公开(公告)日：2016-11-15
申请号：US11720826
申请日：2005-12-02
申请人： Hans Boeve , Karen Attenborough
发明人： Hans Boeve , Karen Attenborough
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/06 , H01L27/2472 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/16
摘要： A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunnel barrier (540) is provided adjacent each of the recording layer and the first electrode. In use, the first electrode is in electrical communication with the non-uniform tunnel barrier, the first electrode for electrically communicating with the second electrode via the non-uniform tunnel barrier.
摘要翻译：公开了一种非易失性存储器（50）。提供第二电极（56）。还提供第一电极（51）。具有可变电阻的多个相变单元（54）的记录层设置在第一电极（51）和第二电极（56）之间。在每个记录层和第一电极附近提供不均匀的隧道势垒（540）。在使用中，第一电极与非均匀隧道势垒电连通，第一电极用于经由不均匀的隧道势垒与第二电极电连通。

5. 发明授权

US08208293B2 Programmable phase-change memory and method therefor 有权
标题翻译：可编程相变存储器及其方法
公开(公告)号：US08208293B2
公开(公告)日：2012-06-26
申请号：US11721432
申请日：2005-12-09
申请人： Hans Boeve , Nick Lambert , Victor Van Acht , Karen Attenborough
发明人： Hans Boeve , Nick Lambert , Victor Van Acht , Karen Attenborough
IPC分类号： G11C11/00
CPC分类号： H01L27/2472 , H01L45/06 , H01L45/1226 , H01L45/1286
摘要： A non-volatile memory is disclosed. A contiguous layer of phase change material (21; 31; 61; 71; 81) is provided. Proximate the contiguous layer of phase change material (21; 31; 61; 71; 81) is provided a first pair of contacts (22; 32; 62; 72; 82) for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a first region. Also adjacent the contiguous layer is provided a second pair of contacts (22; 32; 62; 72; 82) disposed for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a second region thereof, the second region different from the first region. This pairs of contacts may be disposed on the same side or on opposing sides of the phase change material layer.
摘要翻译：公开了一种非易失性存储器。提供了相继层的相变材料（21; 31; 61; 71; 81）。邻近的相变材料层（21; 31; 61; 71; 81）近似地设置有用于在其间提供电流的第一对触点（22; 32; 62; 72; 82），用于通过用于在第一区域内引起其加热的相变材料层（21; 31; 61; 71; 81）的连续层。还邻近邻接层设置有第二对触点（22; 32; 62; 72; 82），用于在它们之间提供电流，用于通过邻接的相变材料层（21; 31; 61）的电流 ; 71; 81），用于在其第二区域内引起加热，所述第二区域与所述第一区域不同。这对触点可以设置在相变材料层的同一侧或相对侧上。

6. 发明申请

US20100127232A1 NON-VOLATILE MEMORY 有权
标题翻译：非易失性存储器
公开(公告)号：US20100127232A1
公开(公告)日：2010-05-27
申请号：US11720826
申请日：2005-12-02
申请人： Hans Boeve , Karen Attenborough
发明人： Hans Boeve , Karen Attenborough
IPC分类号： H01L45/00 , H01L21/16
CPC分类号： H01L45/06 , H01L27/2472 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/16
摘要： A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunnel barrier (540) is provided adjacent each of the recording layer and the first electrode. In use, the first electrode is in electrical communication with the non-uniform tunnel barrier, the first electrode for electrically communicating with the second electrode via the non-uniform tunnel barrier.
摘要翻译：公开了一种非易失性存储器（50）。提供第二电极（56）。还提供第一电极（51）。具有可变电阻的多个相变单元（54）的记录层设置在第一电极（51）和第二电极（56）之间。在每个记录层和第一电极附近提供不均匀的隧道势垒（540）。在使用中，第一电极与非均匀隧道势垒电连通，第一电极用于经由不均匀的隧道势垒与第二电极电连通。

7. 发明授权

US08862422B2 Sensor for sensing accelerations 有权
标题翻译：用于感测加速度的传感器
公开(公告)号：US08862422B2
公开(公告)日：2014-10-14
申请号：US12306041
申请日：2007-05-25
申请人： Teunis Ikkink , Hans Boeve
发明人： Teunis Ikkink , Hans Boeve
IPC分类号： G01P15/08 , G01P15/18 , G11B19/04
CPC分类号： G01P15/0891 , G01P15/18 , G11B19/043
摘要： Sensors (1) for sensing accelerations are provided with accelerometers (11) for measuring accelerations, with magnetometers (12) for measuring magnetic fields, and with processors (13) for, in response to acceleration measurements and magnetic field measurements, judging the accelerations. The processors (13) may comprise acceleration units (14) for comparing acceleration signals with acceleration thresholds, and magnetic field units (15) for comparing changes of magnetic field signals per time interval with rate thresholds. The processors (13) may further comprise decision units (17) for, in response to comparison results from the acceleration units (14) and the magnetic field units (15), deciding whether a total acceleration forms part of a tumbling free-fall or a non-tumbling free-fall or not. The processors (13) may yet further comprise distinguishing units (18) and control units (19). Devices (2) may comprise sensors (1).
摘要翻译：用于感测加速度的传感器（1）具有用于测量加速度的加速度计（11），用于测量磁场的磁力计（12）以及用于响应加速度测量和磁场测量来判断加速度的处理器（13）。处理器（13）可以包括用于将加速度信号与加速度阈值进行比较的加速单元（14），以及用于将每个时间间隔的磁场信号的变化与速率阈值进行比较的磁场单元（15）。处理器（13）还可以包括响应于来自加速单元（14）和磁场单元（15）的比较结果的决定单元（17），决定总加速度是否形成滚动自由落体的一部分，或者不倒翁自由落体。处理器（13）还可以包括区分单元（18）和控制单元（19）。设备（2）可以包括传感器（1）。

8. 发明申请

US20100033175A1 MAGNETO-RESISTIVE SENSOR 审中-公开
标题翻译：磁电阻传感器
公开(公告)号：US20100033175A1
公开(公告)日：2010-02-11
申请号：US12532206
申请日：2008-03-11
申请人： Hans Boeve , Stephan Jansen , Teunis Jan Ikkink , Harris Duric
发明人： Hans Boeve , Stephan Jansen , Teunis Jan Ikkink , Harris Duric
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/096 , H01L43/08
摘要： A high-performance, integrated AMR sensor has compensation and flipping coils for signal conditioning of the sensor output. At least one of the coils is formed in the laminate that connects the AMR sensor with its IC within a single package. As a result, the dimensions of the die area of the AMR sensor and the package size can be kept small.
摘要翻译：高性能，集成的AMR传感器具有用于传感器输出信号调理的补偿和翻转线圈。至少一个线圈形成在层压板中，将AMR传感器及其IC连接在单个封装内。结果，AMR传感器的管芯面积的尺寸和封装尺寸可以保持较小。

9. 发明申请

US20090281739A1 MAGNETIC FIELD SENSOR 有权
标题翻译：磁场传感器
公开(公告)号：US20090281739A1
公开(公告)日：2009-11-12
申请号：US12306028
申请日：2007-05-25
申请人： Teunis Ikkink , Hans Boeve
发明人： Teunis Ikkink , Hans Boeve
IPC分类号： G01R15/00 , G01R35/00 , G01R33/00
CPC分类号： G01C17/38 , G01C17/00
摘要： Magnetic field sensors (1) comprising field detectors (10) for detecting magnetic fields are provided with environment detectors (11) for detecting environments and with processors (12) for, in response to detected environments, performing processes such as loading calibration parameter sets and (re)calibrations for the field detectors (10), to allow the magnetic field sensors (1) to be used in different subsequent environments. The environment detectors (11) may comprise code detectors for detecting codes indicative for environments and may comprise user interfaces (13) for, in response to detected environments and via user interactions, selecting processes to be performed by the processors (12). Devices (2) comprise magnetic field sensors (1). Apparatuses (3) such as cradles removably fix the devices (2) and may comprise code generators (30) for generating the codes indicative for the environments.
摘要翻译：具有用于检测磁场的场检测器（10）的磁场传感器（1）设置有用于检测环境的环境检测器（11）和用于响应于检测到的环境的处理器（12）执行诸如加载校准参数集和（re）校准，以允许磁场传感器（1）在不同的后续环境中使用。环境检测器（11）可以包括用于检测指示环境的代码的代码检测器，并且可以包括用于响应于检测到的环境并且经由用户交互而选择要由处理器（12）执行的处理的用户接口（13）。设备（2）包括磁场传感器（1）。设备（3），例如托架可移除地固定设备（2），并且可以包括用于生成指示环境的代码的代码生成器（30）。

10. 发明授权

US07230290B2 Digital magnetic storage cell device 有权
标题翻译：数字磁存储器件
公开(公告)号：US07230290B2
公开(公告)日：2007-06-12
申请号：US10479521
申请日：2002-06-11
申请人： Hans Boeve
发明人： Hans Boeve
IPC分类号： H01L29/76
CPC分类号： H01L43/08 , G11C11/16
摘要： A digital magnetic memory cell device for read and/or write operation includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The AAF system includes an AAF layer composite and at least one reference layer. The reference layer system includes at least one ferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite in which the thickness of the antiferromagnetic layer is dimensioned to have a uniaxial anisotropy.
摘要翻译：用于读和/或写操作的数字磁存储单元装置包括软磁读和/或写层系统以及形成为AAF系统的至少一个硬磁参考层系统。 AAF系统包括AAF层复合材料和至少一个参考层。参考层系统包括邻近AAF层复合材料的磁性层布置的至少一个铁磁层，其中反铁磁性层的厚度被确定为具有单轴各向异性。

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