专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08503226B2 Programmable phase-change memory and method therefor 有权
标题翻译：可编程相变存储器及其方法
公开(公告)号：US08503226B2
公开(公告)日：2013-08-06
申请号：US13481030
申请日：2012-05-25
申请人： Hans Boeve , Niek Lambert , Victor Van Acht , Karen Attenborough
发明人： Hans Boeve , Niek Lambert , Victor Van Acht , Karen Attenborough
IPC分类号： G11C11/00
CPC分类号： H01L27/2472 , H01L45/06 , H01L45/1226 , H01L45/1286
摘要： A non-volatile memory is disclosed. A contiguous layer of phase change material is provided. Proximate the contiguous layer of phase change material is provided a first pair of contacts for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material for inducing heating thereof within a first region. Also adjacent the contiguous layer is provided a second pair of contacts disposed for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material for inducing heating thereof within a second region thereof, the second region different from the first region.
摘要翻译：公开了一种非易失性存储器。提供了相邻层的相变材料。邻近的相变材料层被提供有用于在它们之间提供电流的第一对触点，用于通过邻接的相变材料层的电流用于在第一区域内引起加热。还邻近邻接层设置有第二对触点，用于在它们之间提供电流，用于通过连续的相变材料层的电流，用于在其第二区域内引起其加热，第二区域不同于第一区域地区。

2. 发明申请

US20100033175A1 MAGNETO-RESISTIVE SENSOR 审中-公开
标题翻译：磁电阻传感器
公开(公告)号：US20100033175A1
公开(公告)日：2010-02-11
申请号：US12532206
申请日：2008-03-11
申请人： Hans Boeve , Stephan Jansen , Teunis Jan Ikkink , Harris Duric
发明人： Hans Boeve , Stephan Jansen , Teunis Jan Ikkink , Harris Duric
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/096 , H01L43/08
摘要： A high-performance, integrated AMR sensor has compensation and flipping coils for signal conditioning of the sensor output. At least one of the coils is formed in the laminate that connects the AMR sensor with its IC within a single package. As a result, the dimensions of the die area of the AMR sensor and the package size can be kept small.
摘要翻译：高性能，集成的AMR传感器具有用于传感器输出信号调理的补偿和翻转线圈。至少一个线圈形成在层压板中，将AMR传感器及其IC连接在单个封装内。结果，AMR传感器的管芯面积的尺寸和封装尺寸可以保持较小。

3. 发明申请

US20090281739A1 MAGNETIC FIELD SENSOR 有权
标题翻译：磁场传感器
公开(公告)号：US20090281739A1
公开(公告)日：2009-11-12
申请号：US12306028
申请日：2007-05-25
申请人： Teunis Ikkink , Hans Boeve
发明人： Teunis Ikkink , Hans Boeve
IPC分类号： G01R15/00 , G01R35/00 , G01R33/00
CPC分类号： G01C17/38 , G01C17/00
摘要： Magnetic field sensors (1) comprising field detectors (10) for detecting magnetic fields are provided with environment detectors (11) for detecting environments and with processors (12) for, in response to detected environments, performing processes such as loading calibration parameter sets and (re)calibrations for the field detectors (10), to allow the magnetic field sensors (1) to be used in different subsequent environments. The environment detectors (11) may comprise code detectors for detecting codes indicative for environments and may comprise user interfaces (13) for, in response to detected environments and via user interactions, selecting processes to be performed by the processors (12). Devices (2) comprise magnetic field sensors (1). Apparatuses (3) such as cradles removably fix the devices (2) and may comprise code generators (30) for generating the codes indicative for the environments.
摘要翻译：具有用于检测磁场的场检测器（10）的磁场传感器（1）设置有用于检测环境的环境检测器（11）和用于响应于检测到的环境的处理器（12）执行诸如加载校准参数集和（re）校准，以允许磁场传感器（1）在不同的后续环境中使用。环境检测器（11）可以包括用于检测指示环境的代码的代码检测器，并且可以包括用于响应于检测到的环境并且经由用户交互而选择要由处理器（12）执行的处理的用户接口（13）。设备（2）包括磁场传感器（1）。设备（3），例如托架可移除地固定设备（2），并且可以包括用于生成指示环境的代码的代码生成器（30）。

4. 发明授权

US07230290B2 Digital magnetic storage cell device 有权
标题翻译：数字磁存储器件
公开(公告)号：US07230290B2
公开(公告)日：2007-06-12
申请号：US10479521
申请日：2002-06-11
申请人： Hans Boeve
发明人： Hans Boeve
IPC分类号： H01L29/76
CPC分类号： H01L43/08 , G11C11/16
摘要： A digital magnetic memory cell device for read and/or write operation includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The AAF system includes an AAF layer composite and at least one reference layer. The reference layer system includes at least one ferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite in which the thickness of the antiferromagnetic layer is dimensioned to have a uniaxial anisotropy.
摘要翻译：用于读和/或写操作的数字磁存储单元装置包括软磁读和/或写层系统以及形成为AAF系统的至少一个硬磁参考层系统。 AAF系统包括AAF层复合材料和至少一个参考层。参考层系统包括邻近AAF层复合材料的磁性层布置的至少一个铁磁层，其中反铁磁性层的厚度被确定为具有单轴各向异性。

5. 发明申请

US20060018148A1 Method and device to detect the likely onset of thermal relaxation in magnetic data storage devices 有权
标题翻译：检测磁数据存储装置中可能发生热松弛的方法和装置
公开(公告)号：US20060018148A1
公开(公告)日：2006-01-26
申请号：US10536291
申请日：2003-11-06
申请人： Gavin Phillips , Hans Boeve
发明人： Gavin Phillips , Hans Boeve
IPC分类号： G11C11/14 , G11C11/00
CPC分类号： G11C11/16 , G11C29/50 , G11C2029/5002
摘要： Reference magnetic elements or bits with a range of magnetic volumes smaller than the minimum size used for actual data storage are written or patterned in the data storage device. The reference elements or bits have dimensions such that their magnetization will relax in a shorter time than that of the minimum expected relaxation time of the storage elements or bits. Probing of the magnetization of the reference elements or bits allows the detection of the probable onset of magnetization relaxation in the storage elements or bits therefore signaling that the re-writing (re-magnetizing) of the storage elements or bits is necessary. Such a scheme can be organized over rows, columns, or sectors.
摘要翻译：在数据存储装置中写入或图案化具有小于用于实际数据存储的最小尺寸的磁体积范围的参考磁性元件或位。参考元件或位具有使得它们的磁化在比存储元件或位的最小预期松弛时间更短的时间内松弛的尺寸。探测参考元件或位的磁化允许检测存储元件或位中磁化松弛的可能开始，从而表明存储元件或位的重写（重新磁化）是必要的。这样的方案可以按行，列或扇区进行组织。

6. 发明授权

US06970333B2 Layer system having an increased magnetoresistive effect and use of the same, wherein a first layer of an artificial antiferromagnet has a relatively low cobalt content 失效
标题翻译：具有增加的磁阻效应的层系统及其用途，其中人造反铁磁体的第一层具有较低的钴含量
公开(公告)号：US06970333B2
公开(公告)日：2005-11-29
申请号：US10486561
申请日：2002-08-07
申请人： Hans Boeve
发明人： Hans Boeve
IPC分类号： G01R33/09 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/10
CPC分类号： B82Y25/00 , H01F10/3272 , Y10T428/3183
摘要： The layer system having an increased magnetoresistive effect contains at least one soft magnetic detection layer, a non-magnetic decoupling layer, which rests on the detection layer, and a layer partial system, which is located at a distance due to the decoupling layer, forms an artificial antiferromagnet, and which is decoupled from the detection layer. This partial system comprises a first ferromagnetic and a second ferromagnetic layer. The first ferromagnetic layer should be antiferromagnetically coupled (K2) to the second ferromagnetic layer via a non-magnetic coupling layer. In addition, the side of the first ferromagnetic layer facing away from the coupling layer should be provided with an antiferromagnetic additional layer and be exchange-coupled (K3) thereto and, in addition, should have a material composition that differs from the second ferromagnetic layer.
摘要翻译：具有增加的磁阻效应的层系统包含至少一个软磁检测层，位于检测层上的非磁性去耦层，以及由于解耦层位于一定距离处的层部分系统形成人造反铁磁体，并且与检测层分离。该部分系统包括第一铁磁和第二铁磁层。第一铁磁层应通过非磁性耦合层与第二铁磁层反铁磁耦合（K 2）。此外，第一铁磁层背离耦合层的一侧应设有反铁磁附加层，并与其交换耦合（K 3），此外，应具有不同于第二铁磁性材料的材料组成层。

7. 发明申请

US20070165450A1 Data retention indicator for magnetic memories 有权
标题翻译：磁存储器的数据保留指示器
公开(公告)号：US20070165450A1
公开(公告)日：2007-07-19
申请号：US10579934
申请日：2004-11-09
申请人： Hans Boeve
发明人： Hans Boeve
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： The present invention provides an array (20) of magnetoresistive memory elements (10) provided with at least one data retention indicator device (50). The at least one data retention indicator device (50) comprises a first magnetic element (51) and a second magnetic element (52) each having a pre-set magnetisation direction, the pre-set magnetisation direction of the first and second magnetic elements (51, 52) being different from each other. The first and second magnetic elements (51, 52) are suitable for aligning their magnetisation direction with magnetic field lines of an externally applied magnetic field exceeding a detection threshold value. According to the present invention, a parameter of the at least one data retention indicator device (50) is chosen so as to set the detection threshold value of the externally applied magnetic field to be detected. The at least one data retention indicator device (50) has a state or an output indicative of exposure of the magnetoresistive memory elements (10) of the array (20) to said externally applied magnetic field.
摘要翻译：本发明提供一种具有至少一个数据保持指示器装置（50）的磁阻存储元件（10）的阵列（20）。所述至少一个数据保持指示器装置（50）包括第一磁性元件（51）和第二磁性元件（52），每个具有预定的磁化方向，所述第一和第二磁性元件的预定磁化方向 51,52）彼此不同。第一和第二磁性元件（51,52）适于使其磁化方向与超过检测阈值的外部施加的磁场的磁场线对准。根据本发明，选择至少一个数据保持指示装置（50）的参数，以设定要检测的外加磁场的检测阈值。所述至少一个数据保持指示装置（50）具有指示阵列（20）的磁阻存储元件（10）暴露于所述外部施加的磁场的状态或输出。

8. 发明申请

US20070103967A1 Non-homogeneous shielding of an mram chip with magnetic field sensor 有权
标题翻译：具有磁场传感器的麦克风芯片的非均匀屏蔽
公开(公告)号：US20070103967A1
公开(公告)日：2007-05-10
申请号：US10579929
申请日：2004-11-09
申请人： Hans Boeve
发明人： Hans Boeve
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： The present invention provides a magnetoresistive memory device (30) comprising an array (20) of magnetoresistive memory elements (10) and at least one magnetic field sensor element (32), wherein the magnetoresistive memory device (30) comprises a partial or non-homogeneous shielding means (40, 41) so as to shield the array (20) of magnetoresistive memory elements (10) differently from an external magnetic field than the at least one magnetic field sensor element (32). With “differently” is meant that there is a minimum shielding difference of 5%, preferably a minimum shielding difference of 10%. The present invention also provides a corresponding shielding method.
摘要翻译：本发明提供了一种包括磁阻存储元件阵列（20）和至少一个磁场传感器元件（32）的磁阻存储器件（30），其中磁阻存储器件（30）包括部分或非磁性元件均匀屏蔽装置（40,41），以便与至少一个磁场传感器元件（32）不同于外部磁场屏蔽磁阻存储元件（10）的阵列（20）。 “不同”是指存在5％的最小屏蔽差异，优选最小屏蔽差为10％。本发明还提供了相应的屏蔽方法。

9. 发明申请

US20070063690A1 High sensitivity magnetic built-in current sensor 失效
标题翻译：高灵敏度磁性内置电流传感器
公开(公告)号：US20070063690A1
公开(公告)日：2007-03-22
申请号：US10596644
申请日：2004-12-20
申请人： Johannes De Wilde , Jose Pineda De Gyvez , Franciscus De Jong , Josephus Huisken , Hans Boeve , Kim Phan Le
发明人： Johannes De Wilde , Jose Pineda De Gyvez , Franciscus De Jong , Josephus Huisken , Hans Boeve , Kim Phan Le
IPC分类号： G01R15/18
CPC分类号： G01R31/3004 , G01R15/20 , G11C11/16 , G11C11/1673 , G11C11/1675
摘要： A sensor for contactlessly detecting currents, has a sensor element having a magnetic tunnel junction (MTJ), and detection circuitry, the sensor element having a resistance which varies with the magnetic field, and the detection circuitry is arranged to detect a tunnel current flowing through the tunnel junction. The sensor element may share an MTJ stack with memory elements. Also it can provide easy integration with next generation CMOS processes, including MRAM technology, be more compact, and use less power. Solutions for increasing sensitivity of the sensor, such as providing a flux concentrator, and for generating higher magnetic fields with a same current, such as forming L-shaped conductor elements, are given. The greater sensitivity enables less post processing to be used, to save power for applications such as mobile devices. Applications include current sensors, built-in current sensors, and IDDQ and IDDT testing, even for next generation CMOS processes.
摘要翻译：一种用于非接触式检测电流的传感器，具有传感器元件，具有磁性隧道结（MTJ）和检测电路，传感器元件具有随磁场而变化的电阻，并且检测电路被设置为检测流过的隧道电流隧道交界处。传感器元件可以与存储器元件共享MTJ堆叠。此外，它可以提供与下一代CMOS工艺的轻松集成，包括MRAM技术，更紧凑，更少的功耗。给出了提高传感器灵敏度的解决方案，例如提供集流器，以及用于产生具有相同电流的较高磁场，例如形成L形导体元件。更高的灵敏度使得能够使用更少的后处理，以节省诸如移动设备之类的应用的功率。应用包括电流传感器，内置电流传感器，IDDQ和IDDT测试，甚至适用于下一代CMOS工艺。

10. 发明授权

US07053428B2 Digital magnetic memory cell device 失效
标题翻译：数字磁存储单元装置
公开(公告)号：US07053428B2
公开(公告)日：2006-05-30
申请号：US10479520
申请日：2002-06-11
申请人： Hans Boeve
发明人： Hans Boeve
IPC分类号： H01L29/76
CPC分类号： G11C11/16
摘要： A digital magnetic memory cell device for read and/or write operations includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The device includes an AAF layer composite and at least one reference layer. The AAF layer composite has two magnetic layers, and the reference layer system includes at least one antiferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite. The magnetic layer is remote from the antiferromagnetic layer and has a uniaxial anisotropy pointing in a first direction. The magnetization of the antiferromagnetic layer is oriented in a second direction. The anisotropy direction of the magnetic layer and the magnetization direction of the antiferromagnetic layer are at an angle with respect to one another.
摘要翻译：用于读取和/或写入操作的数字磁存储单元装置包括软磁读取和/或写入层系统以及形成为AAF系统的至少一个硬磁参考层系统。该装置包括AAF层复合材料和至少一个参考层。 AAF层复合物具有两个磁性层，参考层系统包括邻近AAF层复合材料的磁性层布置的至少一个反铁磁层。磁性层远离反铁磁层，并具有指向第一方向的单轴各向异性。反铁磁层的磁化在第二方向上取向。磁性层的各向异性方向和反铁磁性层的磁化方向相对于彼此成一角度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式