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1. 发明授权

US5807443A Sputtering titanium target assembly and producing method thereof 失效
标题翻译：溅射钛靶组件及其制造方法
公开(公告)号：US5807443A
公开(公告)日：1998-09-15
申请号：US757818
申请日：1996-11-27
申请人： Kaoru Masuda , Shigeru Taniguchi , Akitoshi Hiraki
发明人： Kaoru Masuda , Shigeru Taniguchi , Akitoshi Hiraki
IPC分类号： B23K20/02 , C22F1/18 , C23C14/34
CPC分类号： C22F1/183 , B23K20/021 , C23C14/3414
摘要： A cold-worked titanium material subjected to isostatic material and a backing plate are brought into contact with each other and subsequently hot-pressing. By such working the titanium material and the backing plate are bonded with each other by mutual diffusion and simultaneously the titanium material is recrystallized. The isostatic pressing is performed under a pressure of 50 to 200 MPa at a temperature of 300.degree. to 450.degree. C. The surface of the titanium material is preferably subjected to a surface roughening treatment to provide with a roughness level of 6S to 12S prior to the isostatic pressing.
摘要翻译：经受等静压材料和背板的冷加工钛材料彼此接触并随后热压。通过这样的加工，钛材料和背板通过相互扩散而彼此结合，同时钛材料被重结晶。在50〜200MPa的压力下，在300〜450℃的温度下进行等静压。优选对钛材料的表面进行表面粗糙化处理，以提供6S〜12S的粗糙度，然后等静压。

2. 发明授权

US5489367A Target for reactive sputtering and film-forming method using the target 失效
标题翻译：使用目标的反应溅射和成膜方法的目标
公开(公告)号：US5489367A
公开(公告)日：1996-02-06
申请号：US293133
申请日：1994-08-19
申请人： Kunichika Kubota , Akitoshi Hiraki
发明人： Kunichika Kubota , Akitoshi Hiraki
IPC分类号： C04B35/58 , C23C14/06 , C23C14/34
CPC分类号： C04B35/58014 , C04B35/645 , C23C14/0641 , C23C14/3414
摘要： A target for use in reactive sputtering for forming a film by a reaction with nitrogen, which is a target being composed substantially of titanium and nitrogen and having a nitrogen/titanium atomic ratio, N/Ti, of 0.20 to 0.95, and is used for forming a film whose nitrogen ratio is greater than a ratio of nitrogen to titanium in the target by a reaction with a sputtering gas containing nitrogen, and a method for forming a film, which uses the target.
摘要翻译：用于通过与氮反应形成膜的反应溅射中的靶，其为基本上由钛和氮组成并且具有0.20-0.95的氮/钛原子比的N / Ti的靶，并且用于通过与含氮的溅射气体的反应，形成氮比大于目标物中氮与钛的比例的膜，以及使用该靶的膜的形成方法。

3. 发明授权

US5320729A Sputtering target 失效
标题翻译：溅射目标
公开(公告)号：US5320729A
公开(公告)日：1994-06-14
申请号：US914469
申请日：1992-07-17
申请人： Yasunori Narizuka , Masakazu Ishino , Akihiro Kenmotsu , Yoshitaka Chiba , Akitoshi Hiraki
发明人： Yasunori Narizuka , Masakazu Ishino , Akihiro Kenmotsu , Yoshitaka Chiba , Akitoshi Hiraki
IPC分类号： C23C14/34
CPC分类号： H01J37/3426 , H01J37/3491
摘要： Disclosed herein is a sputtering target with which a high resistivity thin film consisting of chromium, silicon and oxygen can be produced economically and stably for a long time. Also disclosed is a process for producing the sputtering target by selecting the grain size of a chromium (Cr) powder and a silicon dioxide (SiO.sub.2) powder, drying the powders sufficiently by heating, then mixing the dried powders to obtain a mixed powder containing generally from 20 to 80% by weight of chromium, most preferably from 50 to 80% by weight of chromium, the remainder being silicon dioxide, packing the mixed powder in a die, and sintering the packed powder by hot pressing or the like, to produce a desired sputtering target which has a two phase mixed structure. The sputtering target can be used for manufacture of thin film resistors and electric circuits.
摘要翻译：本文公开了一种溅射靶，其可以经济地且稳定地长时间生产由铬，硅和氧组成的高电阻率薄膜。还公开了通过选择铬（Cr）粉末和二氧化硅（SiO 2）粉末的晶粒尺寸来制造溅射靶的方法，通过加热将粉末充分干燥，然后混合干燥粉末，得到通常含有的混合粉末 20至80重量％的铬，最优选为50至80重量％的铬，其余为二氧化硅，将混合粉末包装在模具中，并通过热压等烧结填充的粉末，以产生具有两相混合结构的期望的溅射靶。溅射靶可用于薄膜电阻和电路的制造。

4. 发明授权

US5306569A Titanium-tungsten target material and manufacturing method thereof 失效
标题翻译：钛钨靶材及其制造方法
公开(公告)号：US5306569A
公开(公告)日：1994-04-26
申请号：US914544
申请日：1992-07-16
申请人： Akitoshi Hiraki
发明人： Akitoshi Hiraki
IPC分类号： C23C14/34 , B22F3/16
CPC分类号： H01J37/3429 , C23C14/3414 , Y10T428/12174
摘要： A titanium-tungsten target material capable of limiting the amount of particles generated during sputtering and a method of manufacturing this titanium-tungsten material. The titanium-tungsten target material has a titanium-tungsten alloy phase which occupies 98% or more of the whole area of the material as observed in a micro-structure thereof. In one example of the manufacturing method, an ingot obtained by melting tungsten and titanium is processde by a solution treatment to form a titanium-tungsten target, or a power obtained by melting the ingot is sintered to form a target. Preferably, the melting may be performed under reduced pressure in an electron beam melting manner. In another example of the manufacturing method, a powder is formed from a molten metal by an atomization method and the obtained powder is sintered to form a titanium-tungsten target. For sintering of the powder, it is preferable to apply hot isostatic pressing or hot pressing.
摘要翻译：能够限制溅射时产生的颗粒的量的钛 - 钨靶材料以及该钛 - 钨材料的制造方法。钛 - 钨靶材料具有钛 - 钨合金相，其占微结构中观察到的材料的整个面积的98％以上。在制造方法的一个实例中，通过熔融钨和钛而获得的锭通过固溶处理而形成钛 - 钨靶，或者通过将锭熔化获得的功率被烧结以形成靶。优选地，可以以电子束熔化的方式在减压下进行熔融。在制造方法的另一实例中，通过雾化法由熔融金属形成粉末，并将所得粉末烧结以形成钛 - 钨靶。为了烧结粉末，优选采用热等静压或热压。

5. 发明授权

US5298338A Titanium-tungsten target material and manufacturing method thereof 失效
标题翻译：钛钨靶材及其制造方法
公开(公告)号：US5298338A
公开(公告)日：1994-03-29
申请号：US914545
申请日：1992-07-16
申请人： Akitoshi Hiraki
发明人： Akitoshi Hiraki
IPC分类号： C23C14/34 , B22F7/00
CPC分类号： H01J37/3429 , C23C14/3414 , Y10T428/12014 , Y10T428/1216 , Y10T428/12174
摘要： A titanium-tungsten target material used to form, by sputtering, a barrier metal or the like for use in semiconductor devices. The titanium-tungsten target material is substantially composed of tungsten particles and a titanium-tungsten alloy phase surrounding the tungsten particles. The area ratio at which tungsten grains occupy in a cross section of the titanium-tungsten target material is, preferably, not more than 15%, more preferably, not more than 10%. If the average crystal grain size of the target material is not more greater 15 .mu.m, a uniform thin film can be obtained by sputtering. The target material can be obtained by sintering a titanium powder and a tungsten powder.
摘要翻译：用于通过溅射形成用于半导体器件的阻挡金属等的钛 - 钨靶材料。钛钨靶材料基本上由钨颗粒和围绕钨颗粒的钛 - 钨合金相构成。在钨 - 钨靶材的截面中钨粒占据的面积率优选为15％以下，更优选为10％以下。如果目标材料的平均晶粒尺寸不大于15（my）m，则可以通过溅射获得均匀的薄膜。目标材料可以通过烧结钛粉末和钨粉末来获得。

6. 发明授权

US5160534A Titanium-tungsten target material for sputtering and manufacturing method therefor 失效
标题翻译：用于溅射的钛 - 钨靶材料及其制造方法
公开(公告)号：US5160534A
公开(公告)日：1992-11-03
申请号：US708340
申请日：1991-05-31
申请人： Akitoshi Hiraki
发明人： Akitoshi Hiraki
IPC分类号： C23C14/34
CPC分类号： H01J37/3429 , C23C14/3414
摘要： Ti-W target material for sputtering includes a structure composed of a W phase, a Ti phase, and a Ti-W alloy phase of which 20% or more consist of the area ratio of a micro structure covering the cross section of the Ti-W target material. The Wi-W target material further includes dispersed tungsten particles, the Ti-W alloy phases substantially surrounding the W grains, and the Ti phases dispersed adjacent to the Ti-W alloy phase or the W grains. The formation of the Ti-W alloy phases is capable of reducing a substantial amount of the Ti phase in the target material. It is thus possible to prevent the generation of particles attributable to a difference between sputtering speeds of Ti and Ti-W.
摘要翻译：用于溅射的Ti-W靶材料包括由W相，Ti相和Ti-W合金相组成的结构，其中20％以上由覆盖Ti-W合金截面的微结构的面积比构成， W目标材料。 Wi-W靶材料还包括分散的钨颗粒，基本上围绕W晶粒的Ti-W合金相和Ti-W合金相或W晶粒附近分散的Ti相。 Ti-W合金相的形成能够减少目标材料中相当量的Ti相。因此可以防止由于Ti和Ti-W的溅射速度之间的差异而产生微粒。

7. 发明授权

US4837109A Method of producing neodymium-iron-boron permanent magnet 失效
标题翻译：生产钕铁硼永久磁铁的方法
公开(公告)号：US4837109A
公开(公告)日：1989-06-06
申请号：US71937
申请日：1987-07-10
申请人： Masaaki Tokunaga , Kimio Uchida , Akitoshi Hiraki
发明人： Masaaki Tokunaga , Kimio Uchida , Akitoshi Hiraki
IPC分类号： H01F7/00 , C22C1/00 , H01F1/00 , H01F1/057
CPC分类号： C22C1/00 , H01F1/0573
摘要： A method of producing a neodymium-iron-boron permanent magnet alloy having a composition of 25.0-50.0 weight % of neodymium, 0.3-5.0 weight % of boron and balance substantially iron, including the steps of adding metal calcium, calcium hydride or a mixture thereof as a reducing agent to neodymium fluoride, iron and boron (or ferroboron), and further adding thereto at least one of calcium chloride, sodium chloride and potassium chloride as a flux, melting the resulting mixture in an inert gas atmosphere, or in a reducing gas atmosphere or substantially in vacuum at 1,000.degree.-1,300.degree. C., thereby reducing said neodymium fluoride to provide said alloy with as small a calcium content as 0.1 weight % or less. The starting materials may contain dysprosium fluoride and niobium to provide Nd-Dy-Fe-B-Nb alloys containing 0.5-15.0 weight % Dy and 0.05-5.0 weight % Nb. This method makes it possible to produce Nd-Fe-B or Nd-Dy-Fe-B-Nb permanent magnet alloys with as small a calcium content as 0.1 weight % or less directly from starting materials. Accordingly, it is economically advantageous over the conventional reduction method which produces mother alloys.
摘要翻译：一种制备钕 - 铁 - 硼永久磁铁合金的方法，该合金具有25.0-50.0重量％钕，0.3-5.0重量％硼和余量基本上为铁的组成，包括以下步骤：加入金属钙，氢化钙或混合物作为氟化钕，铁和硼（或铁硼）的还原剂，并进一步向其中加入氯化钙，氯化钠和氯化钾中的至少一种作为助熔剂，将所得混合物在惰性气体气氛中或在减少气氛或基本上在1000°-1.300℃的真空中，从而减少所述氟化钕，以提供具有小于0.1重量％或更少的钙含量的所述合金。起始材料可以含有氟化镝和铌，以提供含有0.5-15.0重量％Dy和0.05-5.0重量％Nb的Nd-Dy-Fe-B-Nb合金。该方法可以直接从起始材料制造具有小于0.1重量％或更少的钙含量的Nd-Fe-B或Nd-Dy-Fe-B-Nb永磁体合金。因此，与生产母合金的常规还原方法相比，在经济上是有利的。

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