专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06860982B2 Zinc oxide with acicular structure, process for its production, and photoelectric conversion device 失效
标题翻译：具有针状结构的氧化锌，其生产工艺及光电转换装置
公开(公告)号：US06860982B2
公开(公告)日：2005-03-01
申请号：US10101462
申请日：2002-03-20
申请人： Hiroshi Okura , Tohru Den , Kaoru Konakahara
发明人： Hiroshi Okura , Tohru Den , Kaoru Konakahara
IPC分类号： C30B29/62 , C01G9/02 , C25B1/00 , C25D9/04 , C30B7/12 , H01G9/20 , H01L31/04 , H01L51/00 , H01M14/00
CPC分类号： H01L51/4233 , C01G9/02 , C25B1/00 , C25D9/04 , H01G9/2027 , H01G9/2054 , H01L51/0086 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： A process for producing a zinc oxide acicular structure by growing an acicular zinc oxide on a substrate, the process comprising the steps of holding the substrate in an electrolytic solution in which at least zinc ions are present, and forming zinc oxide on the substrate by electrodeposition. The electrolytic solution contains at least one cosolute. Also disclosed is a photoelectric conversion device comprising a charge transport layer having the zinc oxide acicular structure.
摘要翻译：一种通过在基材上生长针状氧化锌来生产氧化锌针状结构体的方法，该方法包括以下步骤：将基材保持在至少存在锌离子的电解液中，并通过电沉积在基材上形成氧化锌。电解液含有至少一种共溶剂。还公开了包括具有氧化锌针状结构的电荷输送层的光电转换装置。

2. 发明授权

US06596078B2 Method of producing oxide whiskers, oxide whiskers, and photoelectric conversion apparatus 失效
公开(公告)号：US06596078B2
公开(公告)日：2003-07-22
申请号：US09956021
申请日：2001-09-20
申请人： Kaoru Konakahara , Hiroshi Okura , Tohru Den
发明人： Kaoru Konakahara , Hiroshi Okura , Tohru Den
IPC分类号： C30B902
CPC分类号： H01G9/2027 , C30B23/007 , C30B29/16 , H01L31/1828 , Y02E10/542 , Y02E10/543 , Y02P70/521
摘要： A method of producing oxide whiskers is provided which comprises heating a source material comprised of a metal or an inorganic compound at a first temperature to be vaporized and depositing a crystal constitutive material vaporized from the source material on a substrate heated at a second temperature lower than the first temperature.

3. 发明申请

US20050081912A1 Zinc oxide with acicular structure, process for its production, and photoelectric conversion device 审中-公开
标题翻译：具有针状结构的氧化锌，其生产工艺及光电转换装置
公开(公告)号：US20050081912A1
公开(公告)日：2005-04-21
申请号：US10959177
申请日：2004-10-07
申请人： Hiroshi Okura , Tohru Den , Kaoru Konakahara
发明人： Hiroshi Okura , Tohru Den , Kaoru Konakahara
IPC分类号： C30B29/62 , C01G9/02 , C25B1/00 , C25D9/04 , C30B7/12 , H01G9/20 , H01L31/04 , H01L51/00 , H01M14/00 , H01L31/00
CPC分类号： H01L51/4233 , C01G9/02 , C25B1/00 , C25D9/04 , H01G9/2027 , H01G9/2054 , H01L51/0086 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： A process for producing a zinc oxide acicular structure by growing an acicular zinc oxide on a substrate, the process comprising the steps of holding the substrate in an electrolytic solution in which at least zinc ions are present, and forming zinc oxide on the substrate by electrodeposition. The electrolytic solution contains at least one cosolute. Also, disclosed is a photoelectric conversion device comprising a charge transport layer having the zinc oxide acicular structure.
摘要翻译：一种通过在基材上生长针状氧化锌来生产氧化锌针状结构体的方法，该方法包括以下步骤：将基材保持在至少存在锌离子的电解液中，并通过电沉积在基材上形成氧化锌。电解液含有至少一种共溶剂。另外，公开了包含具有氧化锌针状结构的电荷输送层的光电转换装置。

4. 发明授权

US07892979B2 Columnar structured material and method of manufacturing the same 有权
标题翻译：柱状结构材料及其制造方法
公开(公告)号：US07892979B2
公开(公告)日：2011-02-22
申请号：US12119739
申请日：2008-05-13
申请人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
发明人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C23C14/5873 , B82Y10/00 , B82Y30/00 , C23C14/165 , H01L21/0331 , H01L21/0337 , H01L21/3086 , H01L21/32051 , H01L29/0657
摘要： A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. In addition, a material is introduced into the columnar hole portions of the porous material to form a dot pattern, and the porous material is removed.
摘要翻译：制造点阵图形的方法包括以下步骤：制备由包含第一组分的多个柱状构件构成的结构材料和包含不同于围绕柱状构件的第一组分的第二组分的区域，其结构材料由将第一组分和第二组分沉积在基底上，并从结构化材料中除去柱状构件以形成具有柱状孔的多孔材料。此外，将材料引入到多孔材料的柱状孔部分中以形成点图案，并且去除多孔材料。

5. 发明授权

US07183127B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07183127B2
公开(公告)日：2007-02-27
申请号：US10735062
申请日：2003-12-11
申请人： Akira Kuriyama , Hirokatsu Miyata , Albrecht Otto , Miki Ogawa , Hiroshi Okura , Kazuhiko Fukutani , Tohru Den
发明人： Akira Kuriyama , Hirokatsu Miyata , Albrecht Otto , Miki Ogawa , Hiroshi Okura , Kazuhiko Fukutani , Tohru Den
IPC分类号： H01L21/00
CPC分类号： H01L33/08 , B82Y20/00 , G02B6/1225 , H01L27/146 , H01L27/148 , H01L27/153 , H01L31/035281 , H01L31/103 , H01L31/105 , H01L33/18 , Y02E10/50
摘要： A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a matrix member formed so as to contain silicon or germanium and the cylinder-shaped regions containing aluminum and dispersed in the matrix member, semiconductor regions formed in the pores, each having at least a p-n or p-i-n junction, and a pair or electrodes, arranged respectively on the top and at the bottom of the semiconductor regions. The semiconductor regions and the pair of electrodes form a plurality of semiconductor devices on a substrate.
摘要翻译：通过简单的方法制备包括高密度排列的纳米尺寸半导体器件的半导体器件阵列。该阵列包括多孔体，该多孔体具有通过从包括形成为包含硅或锗的矩阵构件和包含铝并分散在基体构件中的圆柱形区域的结构中去除圆柱形区域而形成的圆柱形孔，半导体形成在孔中的各自具有至少pn或pin结的孔，以及分别布置在半导体区域的顶部和底部的一对或多个电极。半导体区域和一对电极在基板上形成多个半导体器件。

6. 发明申请

US20100003822A1 METHOD FOR PRODUCING COLUMNAR STRUCTURED MATERIAL 失效
标题翻译：生产柱状结构材料的方法
公开(公告)号：US20100003822A1
公开(公告)日：2010-01-07
申请号：US12555195
申请日：2009-09-08
申请人： Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Miki Ogawa , Hiroshi Okura , Kazuhiko Fukutani , Tohru Den
发明人： Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Miki Ogawa , Hiroshi Okura , Kazuhiko Fukutani , Tohru Den
IPC分类号： H01L21/311
CPC分类号： C30B7/00 , C30B7/005 , C30B29/605
摘要： A microcolumnar structured material having a desired material. The columnar structured material includes columnar members obtained by introducing a filler into columnar holes formed in a porous material. The porous material has the columnar holes formed by removing columnar substances from a structured material in which the columnar substances containing a first component are dispersed in a matrix member containing a second component capable of forming a eutectic with the first component. The matrix member may be removed. In the columnar structured material, the filler is a conductive material, and an electrode can be structured by electrically connecting the conductive materials in at least a part of a plurality of holes to a conductor.
摘要翻译：具有所需材料的微柱结构材料。柱状结构材料包括通过将填料引入形成在多孔材料中的柱状孔中获得的柱状构件。多孔材料具有通过从其中含有第一成分的柱状物质分散在含有能够与第一成分形成共晶的第二成分的基质成分的结构化材料中除去柱状物质而形成的柱状孔。可以去除矩阵构件。在柱状结构材料中，填料是导电材料，并且电极可以通过将多个孔的至少一部分中的导电材料电连接到导体来构造。

7. 发明授权

US07087831B2 Photoelectric conversion device and method of production thereof 有权
公开(公告)号：US07087831B2
公开(公告)日：2006-08-08
申请号：US10663752
申请日：2003-09-17
申请人： Tohru Den , Hiroshi Okura
发明人： Tohru Den , Hiroshi Okura
IPC分类号： H01L31/0352 , H01L31/0264 , H01L31/036
CPC分类号： H01L51/4226 , H01G9/2036 , H01G9/2059 , H01L31/03682 , H01L51/0086 , H01L51/4233 , H01L2251/306 , Y02E10/546 , Y02E10/549
摘要： A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

8. 发明申请

US20060032526A1 Thermoelectric conversion material, thermoelectric conversion device and manufacturing method thereof 审中-公开
标题翻译：热电转换材料，热电转换装置及其制造方法
公开(公告)号：US20060032526A1
公开(公告)日：2006-02-16
申请号：US10537161
申请日：2003-12-12
申请人： Kazuhiko Fukutani , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Miki Ogawa , Hiroshi Okura , Tohru Den
发明人： Kazuhiko Fukutani , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Miki Ogawa , Hiroshi Okura , Tohru Den
IPC分类号： B32B3/26 , H01L35/30 , H01L35/28
CPC分类号： C30B29/605 , H01L35/32 , H01L35/34 , Y10T428/249953
摘要： A thermoelectric conversion material and a thermoelectric conversion device having a novel structure of an increased figure of merit are provided by forming nano-wires of thermoelectric material in a smaller cross-sectional size. The thermoelectric conversion material comprises nano-wires obtained by introducing a thermoelectric material (semiconductor material) into columnar pores of a porous body. The porous body is formed by providing a structure in which columns of a column-forming material containing a first component (for example, aluminum) are distributed in a matrix containing a second component (for example, silicon or germanium or a mixture of them) being eutectic with the first component, and then removing the column-forming material from the structure. The average diameter of the nano-wires of the thermoelectric material is 0.5 nm or more and less than 15 nm, and the spacing of the nano-wires is 5 nm or more and less than 20 nm.
摘要翻译：通过以更小的横截面尺寸形成热电材料的纳米线，提供具有增加的品质因数的新颖结构的热电转换材料和热电转换装置。热电转换材料包括通过将热电材料（半导体材料）引入到多孔体的柱状孔中而获得的纳米线。多孔体通过提供一种结构形成，其中含有第一组分（例如铝）的成柱材料的塔分布在含有第二组分（例如硅或锗或它们的混合物）的基质中，与第一组分共晶，然后从结构中除去柱形成材料。热电材料的纳米线的平均直径为0.5nm以上且小于15nm，纳米线的间隔为5nm以上且小于20nm。

9. 发明申请

US20060012013A1 Columnar structured material and method of manufacturing the same 失效
标题翻译：柱状结构材料及其制造方法
公开(公告)号：US20060012013A1
公开(公告)日：2006-01-19
申请号：US10535452
申请日：2003-12-12
申请人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
发明人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
IPC分类号： H01L29/40
CPC分类号： C23C14/5873 , B82Y10/00 , B82Y30/00 , C23C14/165 , H01L21/0331 , H01L21/0337 , H01L21/3086 , H01L21/32051 , H01L29/0657
摘要： A method of forming, on a substrate, minute-sized columnar portions of a columnar structured material at minute intervals, and a columnar structured material formed by the manufacturing method. A columnar structured material is formed through an etching process in which a pattern of minute dots formed on the substrate is utilized as a mask. The pattern of the minute dots is obtained by introducing a mask material into columnar microholes of a porous film formed on the substrate and then removing the porous film. The porous film is formed by removing columnar substances from a structured material in which the columnar substances which are so formed as to contain a first component are dispersed in a matrix which is made of another component and is so formed as to contain a second component that can form a eutectic together with the first component.
摘要翻译：在基板上以微小的间隔在柱状结构材料的微小尺寸的柱状部分上形成通过该制造方法形成的柱状结构材料的方法。通过蚀刻工艺形成柱状结构材料，其中使用形成在基板上的微小点的图案作为掩模。通过将掩模材料引入形成在基板上的多孔膜的柱状微孔中，然后除去多孔膜，获得微小点的图案。通过从结构材料中除去柱状物质形成多孔膜，其中将形成为含有第一成分的柱状物质分散在由另一成分制成的基体中，并形成为含有第二成分可以与第一组分一起形成共晶体。

10. 发明授权

US06801352B2 Electrodeposition display device 失效
标题翻译：电沉积显示装置
公开(公告)号：US06801352B2
公开(公告)日：2004-10-05
申请号：US10408103
申请日：2003-04-08
申请人： Hiroshi Okura , Tohru Den
发明人： Hiroshi Okura , Tohru Den
IPC分类号： G02F103
CPC分类号： G02F1/167 , G02F1/1506
摘要： An electrodeposition display device includes a first substrate, a second substrate facing the first substrate, walls for sealing off the substrates, plating liquid sealed in between the substrates so as to form a cell, a first electrode disposed on at least a part of the first substrate, and a second electrode disposed within the cell. Display is performed by applying signals corresponding to image information to the first electrode and the second electrode, so as to change the state thereof to a state wherein electrodeposition of metal has occurred on at least part of the first electrode, and a state wherein at least a part of metal on the first electrode has become disassociated.
摘要翻译：电沉积显示装置包括第一基板，面对第一基板的第二基板，用于密封基板的壁，将密封在基板之间的液体进行电镀以形成单元;第一电极，设置在第一基板的至少一部分上衬底和设置在电池内的第二电极。通过将对应于图像信息的信号施加到第一电极和第二电极来执行显示，以将其状态改变为在第一电极的至少一部分上发生金属的电沉积的状态，以及至少第一电极上的金属的一部分已经脱离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式