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1. 发明授权

US07056035B2 Optical module, optical apparatus including optical module, and method for using optical module 有权
公开(公告)号：US07056035B2
公开(公告)日：2006-06-06
申请号：US10305195
申请日：2002-11-27
申请人： Kaoru Iida , Takahiro Okada , Takashi Koseki , Masaru Saito , Jun Miyokawa , Toru Fukushima , Takeshi Aikiyo
发明人： Kaoru Iida , Takahiro Okada , Takashi Koseki , Masaru Saito , Jun Miyokawa , Toru Fukushima , Takeshi Aikiyo
IPC分类号： G02B6/36
CPC分类号： G02B6/12026 , G02B6/4201 , G02B6/4271 , H01L2224/45144 , H01L2224/48091 , H01S3/0941 , H01S5/02284 , H01S5/02415 , H01S5/02453 , H01S5/06804 , H01L2924/00014 , H01L2924/00
摘要： An optical module includes a package; an optical device housed in the package, and having a temperature-dependent characteristic; a thermo-module connected to the optical device to control its temperature and configured to heat or cool the optical device when supplied with a first electric current in one direction or a second electric current in a direction opposite to the first electric current, respectively; and a heating element disposed close to the optical device and configured to heat the optical device when supplied with an electric current.

2. 发明授权

US06721341B2 Mounting structure for semiconductor laser module 有权
标题翻译：半导体激光模块的安装结构
公开(公告)号：US06721341B2
公开(公告)日：2004-04-13
申请号：US10113671
申请日：2002-04-02
申请人： Takeshi Aikiyo , Toshio Kimura , Kohei Terada , Takahiro Okada , Takashi Koseki
发明人： Takeshi Aikiyo , Toshio Kimura , Kohei Terada , Takahiro Okada , Takashi Koseki
IPC分类号： H01S304
CPC分类号： H01S5/02415 , H01S5/02208 , H01S5/02248 , H01S5/02284 , H01S5/02476
摘要： A semiconductor laser module is packaged on a mounting substrate through a thermal diffusion sheet member. The thermal diffusion sheet member is that having thermal conductivity where thermal conductivity in the surface direction is greater than that in the thickness direction. Specifically, the thermal diffusion sheet member is graphite, for example, and has a thermal conductivity of 300 W/m·K or greater in the surface direction.
摘要翻译：半导体激光器模块通过热扩散片部件封装在安装基板上。热扩散片部件的热导率在表面方向的导热率大于厚度方向的导热性。具体而言，热扩散片材例如为石墨，表面方向的热导率为300W / m·K以上。

3. 发明授权

US06996145B2 Semiconductor laser module, and method for driving the semiconductor laser module 失效
标题翻译：半导体激光器模块，以及驱动半导体激光器模块的方法
公开(公告)号：US06996145B2
公开(公告)日：2006-02-07
申请号：US09884147
申请日：2001-06-20
申请人： Takeshi Aikiyo , Chihomi Furuhashi , Takashi Koseki
发明人： Takeshi Aikiyo , Chihomi Furuhashi , Takashi Koseki
IPC分类号： H01S3/00 , H01S3/04
CPC分类号： H01S5/024 , H01S5/02284 , H01S5/02415 , H01S5/02438
摘要： The invention provides a semiconductor laser module which can suppress overcurrent flowing into a thermo-module, wherein the thermo-module (5) carries out a heating action when a reverse current flows from lead pin (16f) through lead pin (16a), and contrarily carries out a cooling action when a current flows from the lead pin (16a) through the lead pin (16f). An overcurrent limiting means (20) is provided, which can suppress overcurrent flowing into the thermo-module (5) in its heating direction. The overcurrent limiting circuit (20) is provided with a bypass line (21), a resistor (22), and a diode (23). When a current flows in the heating direction, the diode (23) is turned on, whereby the current is shunted to the thermo-module (5) and bypass line (21) for flow, and accordingly, the overcurrent flowing into the thermo-module (5) can be effectively suppressed.
摘要翻译：本发明提供了一种半导体激光器模块，其可以抑制流入热模块的过电流，其中当反向电流从引脚（16f）通过引脚（16a）流动时，热模块（5）执行加热动作，并且当电流从引线引脚（16a）通过引脚（16f）流动时，相反地执行冷却动作。提供了一种过电流限制装置（20），其可以抑制在其加热方向上流入热模块（5）的过电流。过电流限制电路（20）设置有旁路线路（21），电阻器（22）和二极管（23）。当电流在加热方向上流动时，二极管（23）导通，从而将电流分流到热模块（5）和旁路管线（21）以进行流动，因此，流过热电偶可以有效地抑制模块（5）。

4. 发明授权

US07194014B2 Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the semiconductor laser module 有权
标题翻译：半导体激光器件，半导体激光器模块和使用半导体激光器模块的光纤放大器
公开(公告)号：US07194014B2
公开(公告)日：2007-03-20
申请号：US10748159
申请日：2003-12-31
申请人： Junji Yoshida , Naoki Tsukiji , Toshio Kimura , Masashi Nakae , Takeshi Aikiyo
发明人： Junji Yoshida , Naoki Tsukiji , Toshio Kimura , Masashi Nakae , Takeshi Aikiyo
IPC分类号： H01S5/00 , H01S3/14
CPC分类号： H01S5/4031 , B82Y20/00 , G02B6/4206 , G02B6/4218 , H01S3/094003 , H01S3/094073 , H01S3/302 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/028 , H01S5/0683 , H01S5/1039 , H01S5/1096 , H01S5/12 , H01S5/125 , H01S5/227 , H01S5/3215 , H01S5/3409 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.
摘要翻译：具有两个有源层条纹结构的半导体激光器件包括n-InP衬底，n-InP覆盖层，下部GRIN-SCH层，有源层，上部GRIN-SCH层，p-InP覆盖层，和p-InGaAsP接触层，沿着条纹结构中的一个切割的侧截面中依次生长。高反射膜设置在反射侧端面上，低反射膜设置在发射侧端面上。 p侧电极仅设置在p-InGaAsP接触层的上表面的一部分上，使得在没有p侧电极的区域上形成电流的非注入区域。

5. 发明授权

US06614822B2 Semiconductor laser devices, and semiconductor laser modules and optical communication systems using the same 有权
标题翻译：半导体激光器件和半导体激光器模块以及使用其的光通信系统
公开(公告)号：US06614822B2
公开(公告)日：2003-09-02
申请号：US09776226
申请日：2001-02-02
申请人： Junji Yoshida , Naoki Tsukiji , Takeshi Aikiyo , Satoshi Koyanagi
发明人： Junji Yoshida , Naoki Tsukiji , Takeshi Aikiyo , Satoshi Koyanagi
IPC分类号： H01S500
CPC分类号： H01S5/146 , H01S3/094069 , H01S3/302 , H01S5/005 , H01S5/02284 , H01S5/028 , H01S5/0287 , H01S5/1039 , H01S5/227
摘要： A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 &mgr;m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs and longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.
摘要翻译：示出了用于密集波分复用光通信系统的半导体激光器件和模块。激光装置优选具有大于1000μm的空腔长度和压缩应变多量子阱活性层，并且前端反射率小于约4％。实现更高的光输出和更长的腔长度。优选的模块将这些激光二极管与具有3nm或更小的窄带宽的外部波长选择性反射器一起使用，并且其包括带宽内的多个纵向模式子峰。还公开了用于长腔激光器件的前视面的反射率值与波长选择反射器的峰值反射率之间的关系，其中提供更高的输出功率以及稳定的输出光谱。

6. 发明授权

US07529021B2 Semiconductor laser module, optical amplifier, and method of manufacturing the semiconductor laser module 有权
标题翻译：半导体激光器模块，光放大器和制造半导体激光器模块的方法
公开(公告)号：US07529021B2
公开(公告)日：2009-05-05
申请号：US11831523
申请日：2007-07-31
申请人： Masashi Nakae , Takeshi Aikiyo , Toshio Kimura
发明人： Masashi Nakae , Takeshi Aikiyo , Toshio Kimura
IPC分类号： H01S3/00
CPC分类号： H01S5/4031 , B82Y20/00 , G02B6/2786 , G02B6/4201 , G02B6/4204 , G02B6/4237 , G02B6/4248 , G02B6/4271 , H01S3/094003 , H01S3/094073 , H01S3/302 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/0683 , H01S5/1039 , H01S5/1203 , H01S5/125 , H01S5/2231 , H01S5/227 , H01S5/3409 , H01S5/34373 , H01S5/4012 , H01S5/4087
摘要： A semiconductor laser module has a semiconductor laser device; a package for housing the semiconductor laser device; a PBC fixed in the package for polarization-synthesizing two laser beams output from the semiconductor laser device; a depolarizing element fixed in the package for depolarizing a synthesizing light output from the PBC; and an optical fiber for receiving a light output from the depolarizing element.
摘要翻译：半导体激光器模块具有半导体激光器件; 用于容纳半导体激光器件的封装; 固定在用于偏振合成从半导体激光器件输出的两束激光束的封装中的PBC; 固定在封装中的去极化元件，用于使从PBC输出的合成光去极化; 以及用于接收来自去极化元件的光输出的光纤。

7. 发明授权

US06396023B1 Airtight sealing method and airtight sealing apparatus for semiconductor laser element 失效
标题翻译：半导体激光元件的密封密封方法和密封装置
公开(公告)号：US06396023B1
公开(公告)日：2002-05-28
申请号：US09427116
申请日：1999-10-26
申请人： Takeshi Aikiyo
发明人： Takeshi Aikiyo
IPC分类号： B23K1100
CPC分类号： B23K11/002 , H01S5/0222 , H01S5/02284
摘要： The present invention provides a method for hermetically sealing a semiconductor laser element, by which the cleanness of a package can be maintained extremely satisfactorily in a stabilized state, in order to prevent organic substances from being adhered to the end faces of high output semiconductor laser elements due to photochemical actions. The method comprises the first step of introducing oxygen into a chamber of a hermetical-sealing apparatus and irradiating ultraviolet rays onto an unsealed package having a semiconductor laser element mounted, in the chamber, and the second step of purging the chamber with an inert gas and hermetically sealing an unsealed package in the inert gas atmosphere without being exposed to the outer atmosphere.
摘要翻译：本发明提供了一种用于密封半导体激光元件的方法，通过该方法可以在稳定状态下非常令人满意地保持封装的清洁度，以防止有机物质粘附到高输出半导体激光元件的端面由于光化学作用。该方法包括将氧气引入密封装置的室中并将紫外线照射到在腔室中安装有半导体激光元件的未密封封装的第一步骤，以及用惰性气体吹扫室的第二步骤，在惰性气体气氛中气密地密封未密封的包装，而不暴露于外部大气。

8. 发明授权

US07102738B2 Method and apparatus for inspecting optical modules 有权
标题翻译：用于检查光学模块的方法和装置
公开(公告)号：US07102738B2
公开(公告)日：2006-09-05
申请号：US10665464
申请日：2003-09-22
申请人： Hiroyuki Matsuura , Hiroshi Ichikawa , Toshio Kimura , Takeshi Aikiyo , Masayoshi Seki
发明人： Hiroyuki Matsuura , Hiroshi Ichikawa , Toshio Kimura , Takeshi Aikiyo , Masayoshi Seki
IPC分类号： G01N21/00
CPC分类号： G01M11/33
摘要： A method and apparatus for inspecting a plurality of optical modules, in which the optical modules are given channel numbers, a plurality of inspection items, which are related to optical characteristics and/or electrical characteristics of the optical modules, are measured in parallel, and measurement data on the inspection items is stored in storing device. This makes it possible to inspect the optical modules efficiently in a short time, eliminating waiting time.
摘要翻译：测量与光学模块的光学特性和/或电气特性有关的多个检查项目，其中光学模块被给予通道号的多个光学模块的并行测量方法和装置，以及检查项目的测量数据存储在存储装置中。这样可以在短时间内有效地检查光模块，从而消除等待时间。

9. 发明授权

US06870871B2 Semiconductor laser devices, and semiconductor laser modules and optical communication systems using the same 有权
标题翻译：半导体激光器件和半导体激光器模块以及使用其的光通信系统
公开(公告)号：US06870871B2
公开(公告)日：2005-03-22
申请号：US10001057
申请日：2001-10-31
申请人： Junji Yoshida , Naoki Tsukiji , Takeshi Aikiyo , Satoshi Koyanagi
发明人： Junji Yoshida , Naoki Tsukiji , Takeshi Aikiyo , Satoshi Koyanagi
IPC分类号： H01S5/022 , H01S5/14 , H01S5/00
CPC分类号： H01S5/0287 , H01S5/02208 , H01S5/02284 , H01S5/1039 , H01S5/146
摘要： A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 μm, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs by longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.
摘要翻译：示出了用于密集波分复用光通信系统的半导体激光器件和模块。激光装置优选具有大于1000μm的空腔长度和压缩应变多量子阱活性层，并且前端反射率小于约4％。实现了更长的腔体长度的较高的光输出。优选的模块将这些激光二极管与具有3nm或更小的窄带宽的外部波长选择性反射器一起使用，并且其包括带宽内的多个纵向模式子峰。还公开了用于长腔激光器件的前视面的反射率值与波长选择反射器的峰值反射率之间的关系，其中提供更高的输出功率以及稳定的输出光谱。

10. 发明授权

US06567447B1 Semiconductor laser device and semiconductor laser module using the same 有权
标题翻译：半导体激光器件和半导体激光器模块使用相同
公开(公告)号：US06567447B1
公开(公告)日：2003-05-20
申请号：US09680153
申请日：2000-10-03
申请人： Junji Yoshida , Naoki Tsukiji , Akira Iketani , Naoki Kimura , Jun Niekawa , Toshio Kimura , Takeshi Aikiyo
发明人： Junji Yoshida , Naoki Tsukiji , Akira Iketani , Naoki Kimura , Jun Niekawa , Toshio Kimura , Takeshi Aikiyo
IPC分类号： H01S500
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/02216 , H01S5/02284 , H01S5/02415 , H01S5/02492 , H01S5/028 , H01S5/1039 , H01S5/146 , H01S5/3403
摘要： In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 &mgr;m but equal to or smaller than 1800 &mgr;m, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.
摘要翻译：在本发明的半导体激光装置中，在基板1上形成包括应变多量子阱结构的有源层的半导体层叠结构，空洞长度大于1000μm，但等于或小于1800μm，并且在一个面上形成反射率为3％以下的低反射膜S1，另一方面形成反射率为90％以上的高反射膜S2。半导体激光器模块具有这样的结构，其中半导体激光器件被设置为通过电气交替地布置40对或更多个珀耳帖元件并由顶部和底部陶瓷板保持并且密封在封装中的冷却装置。在内置的光纤上形成具有1.5nm以下的反射带宽的光栅。

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