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    • 3. 发明授权
    • Method of manufacturing magnetic recording medium
    • 磁记录介质的制造方法
    • US08012361B2
    • 2011-09-06
    • US12705421
    • 2010-02-12
    • Kaori KimuraYousuke IsowakiYoshiyuki KamataMasatoshi Sakurai
    • Kaori KimuraYousuke IsowakiYoshiyuki KamataMasatoshi Sakurai
    • B44C1/22
    • C23F4/00B82Y10/00G11B5/743G11B5/746G11B5/855G11B5/865
    • According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a first hard mask, a second hard mask and a resist on a magnetic recording layer, imprinting a stamper to the resist to transfer patterns of protrusions and recesses to the resist, removing residues remaining in the recesses of the patterned resist, etching the second hard mask by using the patterned resist as a mask to transfer the patterns of protrusions and recesses to the second hard mask, etching the first hard mask by using the second hard mask as a mask to transfer the patterns of protrusions and recesses to the first hard mask, removing the second hard mask remaining on the protrusions of the first hard mask, and deactivating the magnetic recording layer exposed in the recesses by means of ion beam irradiation.
    • 根据一个实施例,一种制造磁记录介质的方法包括在磁记录层上形成第一硬掩模,第二硬掩模和抗蚀剂,将压模压印到抗蚀剂上,以将凹凸图案转印到抗蚀剂上, 去除残留在图案化抗蚀剂的凹部中的残留物,通过使用图案化抗蚀剂作为掩模蚀刻第二硬掩模以将突起和凹陷的图案转移到第二硬掩模,通过使用第二硬掩模蚀刻第一硬掩模 用于将突起和凹陷的图案转移到第一硬掩模的掩模,去除残留在第一硬掩模的突起上的第二硬掩模,以及通过离子束照射去除在凹部中暴露的磁记录层。
    • 6. 发明申请
    • METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM
    • 制造磁记录介质的方法
    • US20100214695A1
    • 2010-08-26
    • US12705490
    • 2010-02-12
    • Yousuke IsowakiKaori KimuraYoshiyuki KamataMasatoshi Sakurai
    • Yousuke IsowakiKaori KimuraYoshiyuki KamataMasatoshi Sakurai
    • B44C1/22G11B5/82
    • G11B5/865B82Y10/00G11B5/743G11B5/746G11B5/855
    • According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a first hard mask, a second hard mask and a resist on a magnetic recording layer, imprinting a stamper to the resist to transfer patterns of protrusions and recesses to the resist, removing residues remaining in the recesses of the patterned resist by means of a first etching gas, etching the second hard mask by means of the first etching gas using the patterned resist as a mask to transfer the patterns to the second hard mask, etching the first hard mask by means of a second etching gas different from the first etching gas using the second hard mask as a mask to transfer the patterns to the first hard mask, and performing ion beam etching in order to deactivate the magnetic recording layer exposed in the recesses and to remove the second hard mask.
    • 根据一个实施例,一种制造磁记录介质的方法包括在磁记录层上形成第一硬掩模,第二硬掩模和抗蚀剂,将压模压印到抗蚀剂上,以将凹凸图案转印到抗蚀剂上, 通过第一蚀刻气体去除残留在图案化抗蚀剂的凹部中的残留物,利用第一蚀刻气体,使用图案化抗蚀剂作为掩模蚀刻第二硬掩模,以将图案转移到第二硬掩模,蚀刻第一 通过不同于使用第二硬掩模的第一蚀刻气体作为掩模的第二蚀刻气体将硬掩模转印到第一硬掩模,并且执行离子束蚀刻以使暴露在凹部中的磁记录层失活 并移除第二个硬掩模。