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    • 7. 发明申请
    • LIQUID CRYSTAL DISPLAY DEVICE
    • 液晶显示装置
    • US20070046856A1
    • 2007-03-01
    • US11552289
    • 2006-10-24
    • Sang LeeJung KangSang Lee
    • Sang LeeJung KangSang Lee
    • G02F1/1335
    • G02B6/0038G02B6/0053G02F2001/133607
    • An LCD device has scratch-resistant property without using a protection sheet and can provide enhanced brightness. The LCD device includes a light path regulating member. The member includes a first prism sheet having first prisms of which apex has a round shape. The first prism sheet concentrates light supplied from a lamp to output the concentrated light. An anti-glare polarizing plate uniformly polarizes polarized planes of the concentrated light and provides the polarized light to the lower substrate. The anti-glare polarizing plate is arranged below the lower substrate of an LCD panel, and an uppermost prism sheet of optical sheets is non-matte-treated and has round-treated apexes. In spite of the absence of the protection sheet, the scratch-resistant property of the uppermost prism sheet and the brightness of the LCD panel may be enhanced.
    • 液晶显示装置具有耐刮擦性能,不使用保护片,可提供更高的亮度。 LCD装置包括光路调节部件。 该构件包括具有顶点具有圆形形状的第一棱镜的第一棱镜片。 第一棱镜片集中从灯提供的光以输出集中的光。 抗眩光偏光板使聚光的偏振面均匀地偏振,并向下基板提供偏振光。 防眩光偏振板配置在LCD面板的下基板的下方,最上方的光学片棱镜片未经磨光处理,具有圆形处理的顶点。 尽管不存在保护片,但是可以提高最上面的棱镜片的耐擦伤性和LCD面板的亮度。
    • 8. 发明申请
    • Reactor for thin film deposition and method for depositing thin film on wafer using the reactor
    • 用于薄膜沉积的反应器和使用反应器在晶片上沉积薄膜的方法
    • US20050158469A1
    • 2005-07-21
    • US11080748
    • 2005-03-15
    • Young ParkKeun YooHong LimSang LeeIk LeeSang LeeHyun KyungJang Bae
    • Young ParkKeun YooHong LimSang LeeIk LeeSang LeeHyun KyungJang Bae
    • H01L21/20C23C16/44C23C16/455C23C16/509C23C16/00
    • C23C16/45574C23C16/45527C23C16/45536C23C16/45538C23C16/45544C23C16/45565C23C16/5096
    • A reactor for thin film deposition and a thin film deposition method using the reactor are provided. The reactor includes: a reactor block which receives a wafer transferred through a wafer transfer slit; a wafer block which is installed in the reactor block to receive the wafer thereon; a top plate disposed to cover the reactor block; a shower head which is mounted on the bottom of the top plate and diffuses gas toward the wafer; and an exhaust unit which exhausts the gas from the reactor block. A first supply pipeline which supplies a first reactant gas and/or an inert gas to the wafer; a second supply pipeline which supplies a second reactant gas and/or an inert gas to the wafer; and a plasma generator which generates plasma between the wafer block and shower head are included. The shower head includes: a first supply path connected to the first supply pipeline; a plurality of first diffuse holes formed in the bottom of the shower head at a constant interval; a first main path formed parallel to the plane of the shower head and connecting the plurality of first diffuse holes and the first supply path; a second supply path connected to the second supply pipeline; a plurality of second diffuse holes formed in the bottom of the shower head at a constant interval as the plurality of the first diffuse holes; and a second main path formed parallel to the plane of the shower head at a different height from the second main path and connecting the plurality of second diffuse holes and the second supply path.
    • 提供了一种用于薄膜沉积的反应器和使用该反应器的薄膜沉积方法。 反应器包括:反应器块,其接收通过晶片传送狭缝转移的晶片; 晶片块,其安装在反应器块中以在其上接收晶片; 设置成覆盖反应器块的顶板; 淋浴头,其安装在顶板的底部并将气体向晶片扩散; 以及从反应器块排出气体的排气单元。 一种向晶片提供第一反应气体和/或惰性气体的第一供应管线; 第二供应管线,其向所述晶片供给第二反应气体和/或惰性气体; 并且包括在晶片块和淋浴头之间产生等离子体的等离子体发生器。 淋浴头包括:连接到第一供应管道的第一供应路径; 以恒定的间隔形成在所述淋浴喷头的底部的多个第一扩散孔; 第一主路径,其平行于所述淋浴头的平面形成,并且连接所述多个第一扩散孔和所述第一供给路径; 连接到第二供应管线的第二供应路径; 多个第二扩散孔,作为多个第一扩散孔以恒定的间隔形成在所述淋浴喷头的底部; 以及第二主路径,其与所述淋浴喷头的平面平行,与所述第二主路径不同的高度,并且连接所述多个第二扩散孔和所述第二供应路径。
    • 9. 发明申请
    • Novel rumen bacteria variants and process for preparing succinic acid employing the same
    • 新型瘤胃细菌变异体及使用其制备琥珀酸的方法
    • US20070054387A1
    • 2007-03-08
    • US10580556
    • 2004-05-20
    • Sang LeeSang Lee
    • Sang LeeSang Lee
    • C12P7/46C12N1/20
    • C12P7/46C12N1/20C12R1/01
    • The present invention relates to novel rumen bacterial mutants resulted from the disruption of a lactate dehydrogenase gene (ldhA) and a pyruvate formate-lyase gene (pfl) (which are involved in the production of lactic acid, formic acid and acetic acid) from rumen bacteria; a novel bacterial mutant (Mannheimia sp. LPK7) having disruptions of a lactate dehydrogenase gene (ldhA), a pyruvate formate-lyase gene (pfl), a phosphotransacetylase gene (pta), and a acetate kinase gene (ackA); a novel bacterial mutant (Mannheimia sp. LPK4) having disruptions of a lactate dehydrogenase gene (ldhA), a pyruvate formate-lyase gene (pfl) and a phosphoenolpyruvate carboxylase gene (ppc) involved in the immobilization of CO2 in a metabolic pathway of producing succinic acid; and a method for producing succinic acid, which is characterized by the culture of the above mutants in anaerobic conditions. The inventive bacterial mutants have the property of producing succinic acid at high concentration while producing little or no organic acids, as compared to the prior wild-type strains of producing various organic acids. Thus, the inventive bacterial mutants are useful as strains for the industrial production of succinic acid.
    • 本发明涉及由瘤胃中的乳酸脱氢酶基因(ldhA)和丙酮酸甲酸裂解酶基因(pfl)(其涉及乳酸,甲酸和乙酸的生产)的破坏而产生的新型瘤胃细菌突变体 菌; 具有乳酸脱氢酶基因(ldhA),丙酮酸甲酸裂解酶基因(pfl),磷酸转乙酰酶基因(pta)和乙酸激酶基因(ackA)的破坏的新型细菌突变体(曼氏血清型LPK7); 具有破坏乳酸脱氢酶基因(ldhA),丙酮酸甲酸裂合酶基因(pfl)和磷酸烯醇丙酮酸羧化酶基因(ppc)的新型细菌突变体(曼氏原乳杆菌LPK4)涉及将CO 2固定在生产代谢途径中 琥珀酸; 以及生产琥珀酸的方法,其特征在于在厌氧条件下培养上述突变体。 与生产各种有机酸的现有野生型菌株相比,本发明的细菌突变体具有以高浓度生产琥珀酸的同时产生很少或不含有机酸的性质。 因此,本发明的细菌突变体可用作工业生产琥珀酸的菌株。
    • 10. 发明申请
    • Shower head and method of fabricating the same
    • 淋浴头及其制造方法
    • US20060201428A1
    • 2006-09-14
    • US11436473
    • 2006-05-18
    • Young ParkKeun YooHong LimSang LeeIk LeeSang LeeHyun KyungJang Bae
    • Young ParkKeun YooHong LimSang LeeIk LeeSang LeeHyun KyungJang Bae
    • C23F1/00C23C16/00
    • C23C16/45574C23C16/45536C23C16/45544C23C16/45565C23C16/5096
    • Provided is a shower head used in a reactor for thin film deposition, and a method of fabricating the shower head. The shower head for injecting gases onto a wafer mounted on a wafer block includes: a first supply path supplying a first reaction gas and a second supply path supplying a second reaction gas; a first main path connected to the first supply path and in the plane of the shower head, a plurality of first sub-paths diverging from the first main path in the plane of the shower head, a plurality of first diffuse holes formed regularly spaced on a bottom surface of the shower head, and a plurality of first diffuse paths connecting the plurality of first sub-paths to the plurality of first diffuse holes; a second main path connected to the second supply path in the plane of the shower head and not contacting the first main path, a plurality of second sub-paths diverging from the second main path in the plane of the shower head, a plurality of second diffuse holes formed regularly spaced on a bottom surface of the shower head, and a plurality of second diffuse paths connecting the plurality of second sub-paths and the plurality of second diffuse holes; and a sealing unit sealing open ends of the first and second main paths and open ends of the first and second sub-paths formed in the shower head.
    • 本发明提供一种用于薄膜沉积用反应器的淋浴喷头及其制造方法。 用于将气体喷射到安装在晶片块上的晶片上的喷头包括:供应第一反应气体的第一供应路径和供应第二反应气体的第二供应路径; 连接到第一供应路径并且在淋浴喷头的平面中的第一主路径,从喷淋头的平面中的第一主路径发散的多个第一子路径,多个第一扩散孔,其规则间隔开地形成 淋浴头的底面以及将多个第一子路径连接到多个第一扩散孔的多个第一漫射路径; 第二主路径,其连接到所述淋浴喷头的平面中的所述第二供应路径,并且不接触所述第一主路径;多个第二子路径,其从所述淋浴喷头的平面中的所述第二主路径发散;多个第二主路径, 在喷淋头的底面上规则间隔地形成的扩散孔以及连接多个第二子路径和多个第二扩散孔的多个第二漫射路径; 以及密封单元,密封形成在所述淋浴喷头中的所述第一和第二子路径的所述第一主路径和所述第二主路径的开放端部。