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    • 4. 发明授权
    • Magnetic read head
    • 磁读头
    • US08223463B2
    • 2012-07-17
    • US12579854
    • 2009-10-15
    • Hiroyuki KatadaMasato ShiimotoHiroyuki Hoshiya
    • Hiroyuki KatadaMasato ShiimotoHiroyuki Hoshiya
    • G11B5/39
    • H01L43/08B82Y25/00G01R33/093G11B5/3906H01F10/3254H01F10/3272
    • A magnetoresistive head which has a high head SNR by reducing generated mag-noise without deteriorating an output comprises, according to one embodiment, a magnetoresistive sensor having a laminated structure which includes an antiferromagnetic layer, a magnetization pinned layer, a non-magnetic intermediate layer, a magnetization free layer, and a magnetization stable layer arranged adjacent to the magnetization free layer. The magnetization stable layer comprises non-magnetic coupling layer, a first ferromagnetic stable layer, an antiparallel coupling layer, and a second ferromagnetic stable layer. A magnetization quantity of a first ferromagnetic stable layer and a second ferromagnetic stable layer are substantially equal, and the magnetization of the first ferromagnetic stable layer and the second ferromagnetic stable layer are magnetically coupled in the antiparallel direction from each other. The magnetizations of the first ferromagnetic stable layer and the free layer are coupled in an antiferromagnetic or a ferromagnetic alignment.
    • 根据一个实施例,通过减少产生的磁场噪声而具有高磁头噪声的磁阻头包括:根据一个实施例,具有层叠结构的磁阻传感器包括反铁磁层,磁化钉扎层,非磁性中间层 ,无磁化层和邻近无磁化层布置的磁化稳定层。 磁化稳定层包括非磁耦合层,第一铁磁稳定层,反平行耦合层和第二铁磁稳定层。 第一铁磁稳定层和第二铁磁稳定层的磁化量基本相等,第一铁磁稳定层和第二铁磁稳定层的磁化在反平行方向彼此磁耦合。 第一铁磁稳定层和自由层的磁化以反铁磁或铁磁取向耦合。
    • 5. 发明申请
    • MAGNETIC READ HEAD
    • 磁头阅读头
    • US20100091416A1
    • 2010-04-15
    • US12579854
    • 2009-10-15
    • Hiroyuki KatadaMasato ShiimotoHiroyuki Hoshiya
    • Hiroyuki KatadaMasato ShiimotoHiroyuki Hoshiya
    • G11B5/33
    • H01L43/08B82Y25/00G01R33/093G11B5/3906H01F10/3254H01F10/3272
    • A magnetoresistive head which has a high head SNR by reducing generated mag-noise without deteriorating an output comprises, according to one embodiment, a magnetoresistive sensor having a laminated structure which includes an antiferromagnetic layer, a magnetization pinned layer, a non-magnetic intermediate layer, a magnetization free layer, and a magnetization stable layer arranged adjacent to the magnetization free layer. The magnetization stable layer comprises non-magnetic coupling layer, a first ferromagnetic stable layer, an antiparallel coupling layer, and a second ferromagnetic stable layer. A magnetization quantity of a first ferromagnetic stable layer and a second ferromagnetic stable layer are substantially equal, and the magnetization of the first ferromagnetic stable layer and the second ferromagnetic stable layer are magnetically coupled in the antiparallel direction from each other. The magnetizations of the first ferromagnetic stable layer and the free layer are coupled in an antiferromagnetic or a ferromagnetic alignment.
    • 根据一个实施例,通过减少产生的磁场噪声而具有高磁头噪声的磁阻头包括:根据一个实施例,具有层叠结构的磁阻传感器包括反铁磁层,磁化钉扎层,非磁性中间层 ,无磁化层和邻近无磁化层布置的磁化稳定层。 磁化稳定层包括非磁耦合层,第一铁磁稳定层,反平行耦合层和第二铁磁稳定层。 第一铁磁稳定层和第二铁磁稳定层的磁化量基本相等,第一铁磁稳定层和第二铁磁稳定层的磁化在反平行方向彼此磁耦合。 第一铁磁稳定层和自由层的磁化以反铁磁或铁磁取向耦合。
    • 7. 发明授权
    • Differential magnetoresistive effect head and magnetic recording/reading device
    • 差分磁阻效应头和磁记录/读取装置
    • US08570689B2
    • 2013-10-29
    • US12628577
    • 2009-12-01
    • Yo SatoKatsumi HoshinoMasato ShiimotoTakeshi NakagawaHiroyuki Hoshiya
    • Yo SatoKatsumi HoshinoMasato ShiimotoTakeshi NakagawaHiroyuki Hoshiya
    • G11B5/33G11B5/127
    • G11B5/3948B82Y25/00G01R33/093G11B5/3906H01F10/3254H01F10/3268H01L43/08
    • According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.
    • 根据一个实施例,差分磁阻效应元件包括具有第一钉扎层,第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件,第二磁阻效应元件具有第二钉扎层,第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化,并且当第一钉扎层的厚度为tp1时,tp2> tp1满足,并且厚度 的第二钉扎层是tp2。 在另一个实施例中,第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件,磁头和磁记录/读取装置。
    • 8. 发明申请
    • DIFFERENTIAL MAGNETORESISTIVE EFFECT HEAD AND MAGNETIC RECORDING/READING DEVICE
    • 差分磁阻效应头和磁记录/读取装置
    • US20100142101A1
    • 2010-06-10
    • US12628577
    • 2009-12-01
    • Yo SatoKatsumi HoshinoMasato ShiimotoTakeshi NakagawaHiroyuki Hoshiya
    • Yo SatoKatsumi HoshinoMasato ShiimotoTakeshi NakagawaHiroyuki Hoshiya
    • G11B5/33
    • G11B5/3948B82Y25/00G01R33/093G11B5/3906H01F10/3254H01F10/3268H01L43/08
    • According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.
    • 根据一个实施例,差分磁阻效应元件包括具有第一钉扎层,第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件,第二磁阻效应元件具有第二钉扎层,第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化,并且当第一钉扎层的厚度为tp1时,tp2> tp1满足,并且厚度 的第二钉扎层是tp2。 在另一个实施例中,第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件,磁头和磁记录/读取装置。
    • 10. 发明申请
    • Differential magnetoresistive magnetic head
    • 差分磁阻磁头
    • US20090034135A1
    • 2009-02-05
    • US12218860
    • 2008-07-17
    • Hiroyuki HoshiyaKenichi MeguroKatsumi HoshinoYo SatoHiroyuki KatadaKazuhiro Nakamoto
    • Hiroyuki HoshiyaKenichi MeguroKatsumi HoshinoYo SatoHiroyuki KatadaKazuhiro Nakamoto
    • G11B5/33
    • B82Y25/00B82Y10/00G11B5/3929G11B2005/3996
    • Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.
    • 本发明的实施例有助于提供能够实现高分辨率和高制造稳定性的单元型差分磁阻磁头。 根据一个实施例,通过堆叠下层膜,反铁磁性膜,铁磁性钉扎层,非磁性中间层,软磁性自由层,长距离反向平行耦合层叠膜和差动层叠膜形成磁阻层叠膜 软磁自由层。 长距离反平行耦合分层膜将软磁自由层和差分软磁自由层以约3纳米至20纳米的距离反平行状态进行交换耦合。 通过使用磁阻层叠膜制造单元型差分磁阻磁头,可以实现高分辨率和高制造稳定性而不破坏GMR效应。