专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110000896A1 SYSTEM AND METHOD FOR SELECTIVELY CONTROLLING ION COMPOSITION OF ION SOURCES 有权
标题翻译：用于选择性地控制离子源组成的系统和方法
公开(公告)号：US20110000896A1
公开(公告)日：2011-01-06
申请号：US12496080
申请日：2009-07-01
申请人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
发明人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
IPC分类号： H05H1/34 , H01L21/465
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译：公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。脉冲长度足以影响电子，但是太快而不能显着影响离子。能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。然后可以优化等离子体组成以满足所使用的具体方法的要求。这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

2. 发明授权

US08664561B2 System and method for selectively controlling ion composition of ion sources 有权
标题翻译：用于选择性地控制离子源的离子组成的系统和方法
公开(公告)号：US08664561B2
公开(公告)日：2014-03-04
申请号：US12496080
申请日：2009-07-01
申请人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
发明人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
IPC分类号： B23K10/00
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译：公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。脉冲长度足以影响电子，但是太快而不能显着影响离子。能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。然后可以优化等离子体组成以满足所使用的具体方法的要求。这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

3. 发明授权

US09123509B2 Techniques for plasma processing a substrate 有权
标题翻译：用于等离子体处理衬底的技术
公开(公告)号：US09123509B2
公开(公告)日：2015-09-01
申请号：US13157005
申请日：2011-06-09
申请人： George D. Papasouliotis , Kamal Hadidi , Helen L. Maynard , Ludovic Godet , Vikram Singh , Timothy J. Miller , Bernard Lindsay
发明人： George D. Papasouliotis , Kamal Hadidi , Helen L. Maynard , Ludovic Godet , Vikram Singh , Timothy J. Miller , Bernard Lindsay
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , H01J37/32412 , H01J37/3244
摘要： Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.
摘要翻译：公开了用于等离子体处理衬底的技术。在一个特定的示例性实施例中，该技术可以通过包括将进料气体接近等离子体源的方法来实现，其中进料气体可以包括第一和第二物质，其中第一和第二物质具有不同的电离能; 向所述等离子体源提供多级RF功率波形，其中所述多级RF功率波形在第一脉冲持续时间期间具有至少第一功率电平，并且在第二脉冲持续时间期间具有第二功率电平，其中所述第二功率电平可以与第一功率水平不同; 在第一脉冲持续期间电离原料气体的第一种; 在第二脉冲期间电离第二物种; 以及在所述第一脉冲持续时间期间向所述衬底提供偏置。

4. 发明申请

US20130075253A1 TITANIUM DIBORIDE COATING FOR PLASMA PROCESSING APPARATUS 有权
标题翻译：用于等离子体加工设备的钛白粉涂料
公开(公告)号：US20130075253A1
公开(公告)日：2013-03-28
申请号：US13245035
申请日：2011-09-26
申请人： Kamal Hadidi , George D. Papasouliotis , Craig R. Chaney
发明人： Kamal Hadidi , George D. Papasouliotis , Craig R. Chaney
IPC分类号： C23C14/46 , C23C14/34
CPC分类号： C23C14/564 , C23C16/4404 , H01J37/3171 , H01J37/32477 , H01J2237/0213 , H01J2237/08 , H01J2237/16
摘要： An improved plasma processing chamber is disclosed, wherein some or all of the components which are exposed to the plasma are made of, or coated with, titanium diborane. Titanium diborane has a hardness in excess of 9 mhos, making it less susceptible to sputtering. In addition, titanium diborane is resistant to fluoride and chlorine ions. Finally, titanium diborane is electrically conductive, and therefore the plasma remains more uniform over time, as charge does not build on the surfaces of the titanium diborane components. This results in improved workpiece processing, with less contaminants and greater uniformity. In other embodiments, titanium diborane may be used to line components within a beam line implanter.
摘要翻译：公开了一种改进的等离子体处理室，其中暴露于等离子体的部分或全部组分由钛乙硼烷制成或涂覆。钛乙硼烷的硬度超过9毫摩尔，使其不易溅射。此外，乙硼烷钛耐氟化物和氯离子。最后，乙硼烷钛是导电的，因此随着时间的推移，等离子体保持更均匀，因为电荷不会在钛二硼烷组分的表面上形成。这导致改进的工件加工，更少的污染物和更大的均匀性。在其它实施方案中，可以使用乙硼烷钛来在束线注入机内引导组分。

5. 发明授权

US08592783B2 Titanium diboride coating for plasma processing apparatus 有权
标题翻译：用于等离子体处理设备的二硼化钛涂层
公开(公告)号：US08592783B2
公开(公告)日：2013-11-26
申请号：US13245035
申请日：2011-09-26
申请人： Kamal Hadidi , George D. Papasouliotis , Craig R. Chaney
发明人： Kamal Hadidi , George D. Papasouliotis , Craig R. Chaney
IPC分类号： G21K5/00
CPC分类号： C23C14/564 , C23C16/4404 , H01J37/3171 , H01J37/32477 , H01J2237/0213 , H01J2237/08 , H01J2237/16
摘要： An improved plasma processing chamber is disclosed, wherein some or all of the components which are exposed to the plasma are made of, or coated with, titanium diborane. Titanium diborane has a hardness in excess of 9 mhos, making it less susceptible to sputtering. In addition, titanium diborane is resistant to fluoride and chlorine ions. Finally, titanium diborane is electrically conductive, and therefore the plasma remains more uniform over time, as charge does not build on the surfaces of the titanium diborane components. This results in improved workpiece processing, with less contaminants and greater uniformity. In other embodiments, titanium diborane may be used to line components within a beam line implanter.
摘要翻译：公开了一种改进的等离子体处理室，其中暴露于等离子体的部分或全部组分由钛乙硼烷制成或涂覆。钛乙硼烷的硬度超过9毫摩尔，使其不易溅射。此外，乙硼烷钛耐氟化物和氯离子。最后，乙硼烷钛是导电的，因此随着时间的推移，等离子体保持更均匀，因为电荷不会在钛二硼烷组分的表面上形成。这导致改进的工件加工，更少的污染物和更大的均匀性。在其它实施方案中，可以使用乙硼烷钛来在束线注入机内引导组分。

6. 发明申请

US20120000606A1 PLASMA UNIFORMITY SYSTEM AND METHOD 审中-公开
标题翻译：等离子体均匀系统和方法
公开(公告)号：US20120000606A1
公开(公告)日：2012-01-05
申请号：US12829497
申请日：2010-07-02
申请人： Rajesh Dorai , Kamal Hadidi , Mayur Jagtap
发明人： Rajesh Dorai , Kamal Hadidi , Mayur Jagtap
IPC分类号： C23F1/08 , C23C16/50 , H05B31/02 , C23C16/458
CPC分类号： H01J37/32633 , H01J37/32412 , H01J37/32532
摘要： A plasma processing tool comprises a plasma chamber configured to generate a plasma from a gas introduced into the chamber where the generated plasma has an electron plasma frequency. A plurality of electrodes disposed within the chamber. Each of the electrodes configured to create a rapidly-rising-electric-field pulse in a portion of the plasma contained in the chamber. Each of said rapidly-rising-electric-field pulses having a rise time substantially equal to or less than the inverse of the electron plasma frequency and a duration of less than the inverse of the ion plasma frequency. In this manner, the electron energy distribution in the generated plasma may be spatially and locally modified thereby affecting the density, composition and temperature of the species in the plasma and consequently the uniformity of the density and composition of ions and neutrals directed at a target substrate.
摘要翻译：等离子体处理工具包括等离子体室，其被配置为从引入室中的气体产生等离子体，其中产生的等离子体具有电子等离子体频率。设置在室内的多个电极。每个电极被配置为在腔室中包含的等离子体的一部分中产生快速上升的电场脉冲。所述快速上升电场脉冲中的每一个具有基本上等于或小于电子等离子体频率的倒数的上升时间和小于离子等离子体频率的倒数的持续时间。以这种方式，所产生的等离子体中的电子能量分布可以在空间上和局部改变，从而影响等离子体中物质的密度，组成和温度，从而影响靶向靶基质的离子和中性粒子的密度和组成的均匀性。

7. 发明授权

US08692468B2 Transformer-coupled RF source for plasma processing tool 有权
标题翻译：用于等离子体处理工具的变压器耦合射频源
公开(公告)号：US08692468B2
公开(公告)日：2014-04-08
申请号：US13251819
申请日：2011-10-03
申请人： Kamal Hadidi , Rajesh Dorai
发明人： Kamal Hadidi , Rajesh Dorai
IPC分类号： H01J7/24
CPC分类号： H01J37/08 , H01J37/321 , H01J37/3211 , H01J37/32357 , H01J37/32422
摘要： A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.
摘要翻译：公开了RF源和方法，其在外壳内感应地产生等离子体而没有电场或显着减少电场的产生。使用缠绕在其本体上的具有绝缘线的铁氧体材料来有效地将磁场通过铁氧体的腿引导。然后，可以使用在铁氧体的腿部之间流动的磁场来产生和维持等离子体。在一个实施例中，这些腿搁置在电介质窗口上，使得磁场进入腔室。在另一个实施例中，铁氧体的腿延伸到处理室中，从而进一步将磁场延伸到腔室中。该铁氧体可以与PLAD室或用于传统束线离子注入系统的离子源结合使用。

8. 发明申请

US20130082599A1 TRANSFORMER-COUPLED RF SOURCE FOR PLASMA PROCESSING TOOL 有权
标题翻译：用于等离子体加工工具的变压器耦合射频源
公开(公告)号：US20130082599A1
公开(公告)日：2013-04-04
申请号：US13251819
申请日：2011-10-03
申请人： Kamal Hadidi , Rajesh Dorai
发明人： Kamal Hadidi , Rajesh Dorai
IPC分类号： H05H1/46 , H01L21/3065 , H01J27/02
CPC分类号： H01J37/08 , H01J37/321 , H01J37/3211 , H01J37/32357 , H01J37/32422
摘要： A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.
摘要翻译：公开了RF源和方法，其在外壳内感应地产生等离子体而没有电场或显着减少电场的产生。使用缠绕在其本体上的具有绝缘线的铁氧体材料来有效地将磁场通过铁氧体的腿引导。然后，可以使用在铁氧体的腿部之间流动的磁场来产生和维持等离子体。在一个实施例中，这些腿搁置在电介质窗口上，使得磁场进入腔室。在另一个实施例中，铁氧体的腿延伸到处理室中，从而进一步将磁场延伸到腔室中。该铁氧体可以与PLAD室或用于传统束线离子注入系统的离子源结合使用。

9. 发明申请

US20100062547A1 TECHNIQUE FOR MONITORING AND CONTROLLING A PLASMA PROCESS WITH AN ION MOBILITY SPECTROMETER 有权
标题翻译：用离子移动光谱仪监测和控制等离子体工艺的技术
公开(公告)号：US20100062547A1
公开(公告)日：2010-03-11
申请号：US12556592
申请日：2009-09-10
申请人： Kamal Hadidi , Bernard G. Lindsay
发明人： Kamal Hadidi , Bernard G. Lindsay
IPC分类号： H01L21/66 , C23C16/52 , C23F1/08
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber, and a monitoring system including an ion mobility spectrometer configured to monitor a condition of the plasma. A monitoring method including generating a plasma in a process chamber of a plasma processing apparatus, supporting a workpiece on a platen in the process chamber, and monitoring a condition of the plasma with an ion mobility spectrometer is also provided.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源以及包括离子迁移谱仪的监测系统，该离子迁移谱仪被配置为监测等离子体的状态。还提供了一种监测方法，其包括在等离子体处理装置的处理室中产生等离子体，在工作室中的工作台上支撑工件，并用离子迁移谱仪监测等离子体的状态。

10. 发明授权

US08344318B2 Technique for monitoring and controlling a plasma process with an ion mobility spectrometer 有权
标题翻译：用离子迁移谱仪监测和控制等离子体工艺的技术
公开(公告)号：US08344318B2
公开(公告)日：2013-01-01
申请号：US12556592
申请日：2009-09-10
申请人： Kamal Hadidi , Bernard G. Lindsay
发明人： Kamal Hadidi , Bernard G. Lindsay
IPC分类号： H01L21/66
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber, and a monitoring system including an ion mobility spectrometer configured to monitor a condition of the plasma. A monitoring method including generating a plasma in a process chamber of a plasma processing apparatus, supporting a workpiece on a platen in the process chamber, and monitoring a condition of the plasma with an ion mobility spectrometer is also provided.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源以及包括离子迁移谱仪的监测系统，该离子迁移谱仪被配置为监测等离子体的状态。还提供了一种监测方法，其包括在等离子体处理装置的处理室中产生等离子体，在工作室中的工作台上支撑工件，并用离子迁移谱仪监测等离子体的状态。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式