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1. 发明授权

US09099644B2 Phase change memory cell 有权
标题翻译：相变存储单元
公开(公告)号：US09099644B2
公开(公告)日：2015-08-04
申请号：US13332480
申请日：2011-12-21
申请人： Peng Liu , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
发明人： Peng Liu , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： H01L29/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/1226 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1206 , H01L45/1286 , H01L45/144
摘要： A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit comprises a third electrode, a phase change layer and a fourth electrode electrically connected in series, at least part of the phase change layer is overlapped with the carbon nanotube layer. The second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell.
摘要翻译：相变存储单元包括第一电路和第二电路。第一电路包括第一电极，碳纳米管层和串联电连接的第二电极。第一电路适于将数据写入相变存储单元或复位相变存储单元。第二电路包括第三电极，相变层和串联电连接的第四电极，至少部分相变层与碳纳米管层重叠。第二电路适于从相变存储单元读取数据或者复位相变存储单元。

2. 发明授权

US08895841B2 Carbon nanotube based silicon photovoltaic device 有权
标题翻译：碳纳米管基硅光电器件
公开(公告)号：US08895841B2
公开(公告)日：2014-11-25
申请号：US12339364
申请日：2008-12-19
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L31/00 , H01L31/0236 , H01L31/068 , H01L31/0224 , H01L31/18 , H01L31/0745
CPC分类号： H01L31/022466 , H01L31/0745 , H01L31/1884 , Y02E10/50 , Y10S977/742 , Y10S977/932 , Y10S977/948
摘要： A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.
摘要翻译：光电器件包括硅衬底，本征层，碳纳米管结构和第一电极。硅衬底具有前表面和后表面。本征层设置在硅衬底的前表面上。碳纳米管结构设置在本征层上。第一电极设置在硅衬底的后表面上。

3. 发明授权

US08795461B2 Method for stretching carbon nanotube film 有权
标题翻译：碳纳米管膜拉伸方法
公开(公告)号：US08795461B2
公开(公告)日：2014-08-05
申请号：US12583429
申请日：2009-08-20
申请人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
发明人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
IPC分类号： B29C65/00 , B65C9/06 , B28B11/08
CPC分类号： B29C55/04 , B29K2105/162 , D02J1/22
摘要： A method for stretching a carbon nanotube film includes providing one or more carbon nanotube films and one or more elastic supporters, attaching at least one portion of the one or more carbon nanotube films to the one or more elastic supporters, and stretching the elastic supporters.
摘要翻译：拉伸碳纳米管膜的方法包括提供一个或多个碳纳米管膜和一个或多个弹性支撑体，将一个或多个碳纳米管膜的至少一部分附着到一个或多个弹性支撑体上，并拉伸弹性支撑体。

4. 发明授权

US08298623B2 Method for making composite material 有权
标题翻译：制作复合材料的方法
公开(公告)号：US08298623B2
公开(公告)日：2012-10-30
申请号：US12592497
申请日：2009-11-25
申请人： Jia-Ping Wang , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Jia-Ping Wang , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B05D3/04
CPC分类号： B01J35/002 , B01J21/185 , B01J35/0013 , B82Y30/00 , B82Y40/00 , C01B32/174 , Y10T428/25 , Y10T428/2927
摘要： A method for fabricating a composite material includes providing a free-standing carbon nanotube structure having a plurality of carbon nanotubes, introducing at least two reacting materials into the carbon nanotube structure to form a reacting layer, activating the reacting materials to grow a plurality of nanoparticles, wherein the nanoparticles are spaced from each other and coated on a surface of each of the carbon nanotubes of the carbon nanotube structure.
摘要翻译：一种制备复合材料的方法包括提供具有多个碳纳米管的独立碳纳米管结构，将至少两个反应材料引入到碳纳米管结构中以形成反应层，活化反应材料以生长多个纳米颗粒，其中所述纳米颗粒彼此间隔开并涂覆在所述碳纳米管结构的每个碳纳米管的表面上。

5. 发明授权

US08163340B2 Carbon nanotube film structure and method for making the same 有权
标题翻译：碳纳米管薄膜结构及其制造方法
公开(公告)号：US08163340B2
公开(公告)日：2012-04-24
申请号：US12243059
申请日：2008-10-01
申请人： Xue-Shen Wang , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
发明人： Xue-Shen Wang , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： C23C16/00
CPC分类号： C01B31/0226 , B01J21/185 , B01J23/74 , B01J23/745 , B01J23/881 , B01J23/8906 , B01J37/0219 , B82Y30/00 , B82Y40/00 , C01B31/0233 , C01B32/16 , C01B32/162 , C01B2202/02 , C01B2202/04 , C01B2202/06 , C01B2202/08 , C01B2202/34 , C01B2202/36 , C01P2004/13 , Y10S977/843 , Y10T428/24132 , Y10T428/249924
摘要： A carbon nanotube film structure includes at least one carbon nanotube film or at least two stacked carbon nanotube films. Each carbon nanotube film includes a plurality of ultralong carbon nanotubes parallel to the surface of the carbon nanotube film and parallel to each other. A length of the ultralong carbon nanotube is equal to or greater than 1 centimeter. The invention is also related to a method for making the above-described carbon nanotube film structure.
摘要翻译：碳纳米管膜结构包括至少一个碳纳米管膜或至少两个堆叠的碳纳米管膜。每个碳纳米管膜包括平行于碳纳米管膜的表面并且彼此平行的多个超长碳纳米管。超长碳纳米管的长度等于或大于1厘米。本发明还涉及制造上述碳纳米管薄膜结构的方法。

6. 发明授权

US08053291B2 Method for making thin film transistor comprising flocculating of carbon nanotubes 有权
标题翻译：制造薄膜晶体管的方法，其包括碳纳米管的絮凝
公开(公告)号：US08053291B2
公开(公告)日：2011-11-08
申请号：US12384310
申请日：2009-04-02
申请人： Chang-Hong Liu , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Chang-Hong Liu , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01L51/0558 , Y10S977/938
摘要： A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer.
摘要翻译：一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供多个碳纳米管和绝缘基板; 絮凝碳纳米管以获得碳纳米管结构，将碳纳米管结构施加在绝缘基板上; 形成源电极，漏电极和栅电极; 并用绝缘层覆盖碳纳米管结构。源电极和漏极连接到碳纳米管结构，栅电极通过绝缘层与碳纳米管结构电绝缘。

7. 发明授权

US07973305B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US07973305B2
公开(公告)日：2011-07-05
申请号：US12384299
申请日：2009-04-02
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/06
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0541 , H01L51/0545 , H01L51/0562
摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer comprises at least two stacked carbon nanotube films, and each carbon nanotube film comprises a plurality of carbon nanotubes primarily oriented along a same direction, and the carbon nanotubes in at least two adjacent carbon nanotube films are aligned along different directions.
摘要翻译：薄膜晶体管包括源电极，漏电极，半导体层和栅电极。漏电极与源电极间隔开。半导体层连接到源电极和漏电极。栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。半导体层包括至少两个层叠的碳纳米管膜，并且每个碳纳米管膜包括主要沿相同方向定向的多个碳纳米管，并且至少两个相邻的碳纳米管膜中的碳纳米管沿着不同的方向排列。

8. 发明申请

US20100086150A1 Flexible thermoacoustic device 有权
标题翻译：柔性热声装置
公开(公告)号：US20100086150A1
公开(公告)日：2010-04-08
申请号：US12583388
申请日：2009-08-20
申请人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian
发明人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian
IPC分类号： H04R25/00
CPC分类号： H04R23/002
摘要： A flexible thermoacoustic device includes a soft supporter and a sound wave generator. The sound wave generator is located on a surface of the softer supporter. The sound wave generator includes a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes combined by van der Waals attractive force.
摘要翻译：柔性热声装置包括软支架和声波发生器。声波发生器位于较软的支架的表面上。声波发生器包括碳纳米管结构。碳纳米管结构包括通过范德华力吸引力组合的多个碳纳米管。

9. 发明授权

US07638112B2 Method of manufacturing zinc aluminate nano-material 有权
公开(公告)号：US07638112B2
公开(公告)日：2009-12-29
申请号：US12291302
申请日：2008-11-06
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C01F7/00 , C23C14/00
CPC分类号： C01G9/00 , B82Y30/00 , C01P2004/64
摘要： A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.

10. 发明申请

US20090298239A1 Method for making thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090298239A1
公开(公告)日：2009-12-03
申请号：US12384310
申请日：2009-04-02
申请人： Chang-Hong Liu , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Chang-Hong Liu , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01L51/0558 , Y10S977/938
摘要： A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer.
摘要翻译：一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供多个碳纳米管和绝缘基板; 絮凝碳纳米管以获得碳纳米管结构，将碳纳米管结构施加在绝缘基板上; 形成源电极，漏电极和栅电极; 并用绝缘层覆盖碳纳米管结构。源电极和漏极连接到碳纳米管结构，栅电极通过绝缘层与碳纳米管结构电绝缘。

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