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1. 发明申请

US20200304035A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20200304035A1
公开(公告)日：2020-09-24
申请号：US16536921
申请日：2019-08-09
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Eitaro MIYAKE , Hiroshi MATSUYAMA , Tatsuya HIRAKAWA , Kazuya KODANI
IPC分类号： H02M7/00 , H01L23/00
摘要： Provided is a semiconductor device according to an embodiment including: a main board; a first board provided on the main board; a second board provided on the main board; a first electrode member provided on the first board and having a first planar portion; a second electrode member provided on the first board and having a second planar portion; a third electrode member provided on the first board and having a third planar portion; a first semiconductor element provided on the first electrode member and having a first electrode and a second electrode; a second semiconductor element provided on the second electrode member and having a third electrode and a fourth electrode; a first wire electrically connecting the second electrode and the second electrode member; a second wire electrically connecting the fourth electrode and the third electrode member; a fourth electrode member provided on the second board and having a fourth planar portion; a fifth electrode member provided on the second board and having a fifth planar portion; a sixth electrode member provided on the second board and having a sixth planar portion; a third semiconductor element provided on the fourth electrode member and having a fifth electrode and a sixth electrode; a fourth semiconductor element provided on the fifth electrode member and having a seventh electrode and an eighth electrode; a third wire electrically connecting the sixth electrode and the fifth electrode member; a fourth wire electrically connecting the eighth electrode and the sixth electrode member; a first terminal plate connected to the first planar portion, the fourth planar portion, and a DC power supply; a second terminal plate connected to the second planar portion and the fifth planar portion; and a third terminal plate connected to the third planar portion, the sixth planar portion, and the DC power supply.

2. 发明申请

US20170256483A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170256483A1
公开(公告)日：2017-09-07
申请号：US15245924
申请日：2016-08-24
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hiroshi MATSUYAMA
IPC分类号： H01L23/498 , H01L23/00 , H01L23/367 , H01L25/18
CPC分类号： H01L23/49541 , H01L23/15 , H01L23/3672 , H01L23/3731 , H01L23/495 , H01L23/49503 , H01L23/49838 , H01L23/49844 , H01L24/01 , H01L24/05 , H01L24/06 , H01L24/09 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/18 , H01L2224/05552 , H01L2224/05554 , H01L2224/05624 , H01L2224/0603 , H01L2224/06181 , H01L2224/29101 , H01L2224/32157 , H01L2224/32225 , H01L2224/48137 , H01L2224/48159 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2224/4917 , H01L2224/73265 , H01L2924/00014 , H01L2924/30105 , H01L2924/30107 , H01L2224/45099 , H01L2924/014 , H01L2924/00012
摘要： A semiconductor device includes a first conductive layer with first and second sections separated in a first direction. A first chip is on the first section and has a first, second and third electrodes. A second chip is on the second section and has a fourth and fifth electrode. A second conductive layer is between the sections of the first conductive layer in the first direction. The second conductive layer has a first connected section to which the second electrode is connected, a second connected section to which to the fifth electrode is connected, and a first clearance portion between the first and second connected sections in the first direction. A third conductive layer is spaced from the first conductive layer and the second conductive layer and is connected to the third electrode.

3. 发明申请

US20170271247A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170271247A1
公开(公告)日：2017-09-21
申请号：US15250851
申请日：2016-08-29
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shigeaki HAYASE , Hiroshi MATSUYAMA
IPC分类号： H01L23/495 , H01L23/535 , H01L23/492 , H01L27/06
CPC分类号： H01L23/49562 , H01L23/3121 , H01L23/3735 , H01L23/492 , H01L23/4952 , H01L23/49811 , H01L23/49844 , H01L23/535 , H01L27/0629
摘要： A semiconductor device includes first and second conductive layers on a substrate and separated from each other. A first semiconductor chip is mounted on the first conductive layer and has a first electrode on a side opposite the first conductive layer. A second semiconductor chip is mounted on the first conductive layer and has a second electrode on a side opposite the first conductive layer. A first metal member is mounted on the first electrode. A second metal member is mounted on the second electrode. A metal plate has a first portion disposed on the first and second metal members, and a second portion connected to the second conductive layer. The metal plate electrically connects the first and second electrodes to the second conductive layer through the first and second metal members.

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