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1. 发明申请

US20150078070A1 MAGNETIC MEMORY DEVICE AND DRIVING METHOD FOR THE SAME 有权
标题翻译：磁记忆体装置及其驱动方法
公开(公告)号：US20150078070A1
公开(公告)日：2015-03-19
申请号：US14445331
申请日：2014-07-29
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Michael Arnaud QUINSAT , Tetsufumi Tanamoto , Shiho Nakamura
IPC分类号： H01L27/22 , G11C11/16 , H01L43/02
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C19/0841 , H01L27/222 , H01L43/02
摘要： According to one embodiment, a magnetic memory device includes a magnetic unit, a switching part, and a reading part. The magnetic unit includes a magnetic wire, and first and second magnetic parts. The magnetic wire includes magnetic domains and has one end and one other end. The first magnetic part is connected with the one end and has a first magnetization. The second magnetic part is connected with the one end, and has a second magnetization. The switching part includes first and second switches. The first switch is connected with the first magnetic part and flows a first current between the first magnetic part and the magnetic wire. The second switch is connected with the second magnetic part and flows a second current between the second magnetic part and the magnetic wire. The reading part is configured to read a magnetization of the magnetic domains.
摘要翻译：根据一个实施例，磁存储器件包括磁性单元，开关部件和读取部件。磁性单元包括磁线，以及第一和第二磁性部分。磁线包括磁畴并具有一端和另一端。第一磁性部分与一端连接并具有第一磁化。第二磁性部分与一端连接，并具有第二磁化强度。开关部分包括第一和第二开关。第一开关与第一磁性部分连接，并且在第一磁性部分和电磁线之间流动第一电流。第二开关与第二磁性部分连接，并在第二磁性部分和磁性线之间流动第二电流。读取部分被配置为读取磁畴的磁化。

2. 发明申请

US20190035449A1 MEMORY SYSTEM, SEMICONDUCTOR STORAGE DEVICE, AND SIGNAL PROCESSING SYSTEM 审中-公开
公开(公告)号：US20190035449A1
公开(公告)日：2019-01-31
申请号：US15911211
申请日：2018-03-05
申请人： Kabushiki Kaisha Toshiba
发明人： Daisuke SAIDA , Yousuke ISOWAKI , Michael Arnaud QUINSAT , Kenichiro YAMADA , Kosuke TATSUMURA
IPC分类号： G11C11/16 , G06N7/00
CPC分类号： G11C11/1675 , G06N3/0445 , G06N3/0454 , G06N3/0472 , G06N3/0635 , G06N3/084 , G06N7/005 , G11C11/161 , G11C11/1673
摘要： A memory system has a nonvolatile memory having a plurality of readable and writable memory cells, a write voltage control unit that controls at least one of a voltage value and a pulse width of a write voltage of the nonvolatile memory in accordance with a weight of a signal processing path or a signal processing node, a write unit that writes data in two or more memory cell groups among the plurality of memory cells using the write voltage controlled by the write voltage control unit, a reversal probability detection unit that detects a reversal probability of the memory cell group when writing data is written by the write unit, and a weight conversion unit that converts the detected reversal probability into a weight.

3. 发明申请

US20160276404A1 MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY 有权
标题翻译：磁记忆装置和磁记忆
公开(公告)号：US20160276404A1
公开(公告)日：2016-09-22
申请号：US15053461
申请日：2016-02-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shiho NAKAMURA , Michael Arnaud QUINSAT , Tsuyoshi KONDO
IPC分类号： H01L27/22 , H01L43/08 , H01L43/10 , H01L43/02
CPC分类号： H01L27/222 , G11C19/0841 , H01L43/10
摘要： A magnetic memory device according to an embodiment includes a first magnetic section, a read section, and a write section. The first magnetic section includes an extending portion. The extending portion extends in a first direction. The extending portion has a first interface and a second interface. The extending portion includes magnetic domains arranged along the first direction. Magnetization easy axis of the extending portion is directed along a second direction. The extending portion includes a first region and a second region. The first region contains at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium. The second region contains at least one second element selected from a second group consisting of iron, cobalt, nickel, boron, silicon, and phosphorus. Concentration of the first element in the second region is lower than concentration of the first element in the first region.
摘要翻译：根据实施例的磁存储器件包括第一磁性部分，读取部分和写入部分。第一磁性部分包括延伸部分。延伸部分沿第一方向延伸。延伸部具有第一界面和第二界面。延伸部分包括沿第一方向布置的磁畴。延伸部分的易磁化轴线沿着第二方向被引导。延伸部分包括第一区域和第二区域。第一区域包含至少一种选自由钆，铽，镝，钕和钬组成的第一组的第一元素。第二区域包含至少一个选自铁，钴，镍，硼，硅和磷的第二组中的第二元素。第二区域中的第一元素的浓度低于第一区域中的第一元素的浓度。

4. 发明申请

US20150243424A1 MAGNETIC DEVICE 有权
标题翻译：磁性装置
公开(公告)号：US20150243424A1
公开(公告)日：2015-08-27
申请号：US14546099
申请日：2014-11-18
申请人： Kabushiki Kaisha Toshiba
发明人： Michael Arnaud QUINSAT , Shiho NAKAMURA
IPC分类号： H01F7/06 , H01H47/00 , H01F1/047
CPC分类号： H01H47/00 , G11C11/15 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C2213/71 , H01F10/3254 , H01F10/3286
摘要： According to one embodiment, a magnetic device includes a first extending magnetic portion, a first conductive portion, a first inserted magnetic portion, and a first intermediate portion. The first extending magnetic portion is conductive, and includes a first magnetic region and a second magnetic region. The first magnetic region extends in a first extending direction, includes a first part, and has a first magnetization being changeable. The second magnetic region extends in the first extending direction, having a magnetization being changeable and different form the first magnetization. The first conductive portion is provided apart from the first part in a stacking direction intersecting the first extending direction. The first inserted magnetic portion is provided between the first conductive portion and the first part, and has a second magnetization being changeable. The first intermediate portion is provided between the first part and the first inserted magnetic portion.
摘要翻译：根据一个实施例，磁性装置包括第一延伸磁性部分，第一导电部分，第一插入磁性部分和第一中间部分。第一延伸磁性部分是导电的，并且包括第一磁性区域和第二磁性区域。第一磁性区域在第一延伸方向上延伸，包括第一部分，并且具有可变化的第一磁化。第二磁性区域在第一延伸方向上延伸，具有可变化且不同的磁化形成第一磁化强度。在与第一延伸方向相交的层叠方向上，第一导电部分与第一部分分开设置。第一插入磁性部分设置在第一导电部分和第一部分之间，并且具有可变化的第二磁化。第一中间部分设置在第一部分和第一插入磁性部分之间。

5. 发明申请

US20170263329A1 MAGNETIC MEMORY DEVICE 审中-公开
公开(公告)号：US20170263329A1
公开(公告)日：2017-09-14
申请号：US15252936
申请日：2016-08-31
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Michael Arnaud QUINSAT , Tsuyoshi KONDO , Hirofumi MORISE , Takuya SHIMADA , Yasuaki OOTERA , Masaki KADO , Shiho NAKAMURA
IPC分类号： G11C19/08
CPC分类号： G11C19/0833 , G11C19/0841
摘要： According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

6. 发明申请

US20150380638A1 MAGNETIC MEMORY AND SHIFT REGISTER MEMORY 有权
标题翻译：磁记忆和移位寄存器存储器
公开(公告)号：US20150380638A1
公开(公告)日：2015-12-31
申请号：US14704359
申请日：2015-05-05
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yasuaki OOTERA , Takuya SHIMADA , Tsuyoshi KONDO , Hirofumi MORISE , Michael Arnaud QUINSAT , Shiho NAKAMURA
IPC分类号： H01L43/08 , H01L27/22 , H01L43/02
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C19/0808
摘要： According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.
摘要翻译：根据一个实施例，磁存储器包括第一磁性单元，第一磁性层，第一记录/再现元件，第一电极和第二电极。第一磁性单元沿第一方向延伸。第一磁性单元包括沿第一方向布置的多个磁畴。第一磁性单元具有中空部分的柱状结构。第一磁性层连接到第一磁性单元的第一端部，第一磁性层沿与第一方向相交的方向延伸。第一记录/再现元件设置成与第一磁性层接触。第一电极电连接到第一磁性层。第二电极在与第一端部相对的一侧连接到第一磁性单元的第二端部。

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