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1. 发明申请

US20230005670A1 PHOTOELECTRIC CONVERSION ELEMENT 有权
公开(公告)号：US20230005670A1
公开(公告)日：2023-01-05
申请号：US17930432
申请日：2022-09-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Haruhi OOOKA , Kenji TODORI , Kenji FUJINAGA
IPC分类号： H01G9/20
摘要： A photoelectric conversion element comprises: a photoelectric conversion layer; a first compound layer including a first supporting member and a first compound, the first compound being supported by the first supporting member, being not in contact with the photoelectric conversion layer, and being liquid or gelatinous in an environment to use the element; and a second compound layer including a second supporting member and a second compound, the second compound being supported by the second supporting member, being not in contact with the photoelectric conversion layer and the first compound, and being liquid or gelatinous in the environment.

2. 发明申请

US20180261396A1 SEMICONDUCTOR ELEMENTS AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180261396A1
公开(公告)日：2018-09-13
申请号：US15692855
申请日：2017-08-31
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Takeshi GOTANDA , Haruhi OOOKA
IPC分类号： H01G9/20 , H01G9/00 , H01L51/00 , H01L51/44 , H01L51/42 , H01L51/52 , H01L51/50
CPC分类号： H01G9/2018 , H01G9/0029 , H01L51/0003 , H01L51/0007 , H01L51/0037 , H01L51/004 , H01L51/0047 , H01L51/0072 , H01L51/009 , H01L51/424 , H01L51/4246 , H01L51/4253 , H01L51/442 , H01L51/5032 , H01L51/5203 , H01L2251/308 , Y02E10/549
摘要： The present embodiments provide a highly durable semiconductor element capable of generating electricity or emitting light with high efficiency, and further provide a manufacturing method thereof. The semiconductor element according to the embodiment comprises a first electrode, a second electrode, an active layer and a substrate, and is characterized in that the active layer contains crystals oriented anisotropically. For manufacturing the element, the active layer is produced by the steps of: applying a coating solution containing precursor compounds of the active layer and an organic solvent capable of dissolving the precursor compounds, to form a coating film; and then growing the crystals in a specific direction parallel to the surface of the coating film.

3. 发明申请

US20170077433A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR ELEMENTS 审中-公开
标题翻译：制造半导体元件的方法和装置
公开(公告)号：US20170077433A1
公开(公告)日：2017-03-16
申请号：US15258191
申请日：2016-09-07
申请人： Kabushiki Kaisha Toshiba
发明人： Takeshi GOTANDA , Shigehiko MORI , Akihiro MATSUI , Haruhi OOOKA
IPC分类号： H01L51/44 , H01L51/00 , H01L51/52 , H01L51/42 , H01L51/56
CPC分类号： H01L51/0003 , H01L51/0028 , H01L51/0037 , H01L51/424 , H01L51/5012 , H01L51/56 , H01L2251/308 , Y02E10/549
摘要： The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.
摘要翻译：该实施例提供了一种制造半导体元件的方法和装置，其显示出高转换效率并且具有钙钛矿结构。该实施例是一种制造半导体元件的方法，该半导体元件包括具有钙钛矿结构的有源层。所述活性层通过以下步骤制备：通过用包含钙钛矿结构的前体化合物的涂布溶液和能够溶解所述前体化合物的有机溶剂直接或间接涂覆第一或第二电极来形成涂膜; 然后在所述涂膜中完成钙钛矿结构的形成反应之前，开始将气体吹到所述涂膜上。另一实施例是根据上述方法制造半导体元件的装置。

4. 发明申请

US20160268532A1 SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池模块及其制造方法
公开(公告)号：US20160268532A1
公开(公告)日：2016-09-15
申请号：US15063624
申请日：2016-03-08
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki NAKAO , Haruhi OOOKA
IPC分类号： H01L51/44 , H01L51/42
CPC分类号： H01L27/301 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： According to one embodiment, a solar cell module includes a substrate, a first upper electrode, a first lower electrode provided between the first upper electrode and the substrate, a lower intermediate layer including first to third lower regions, a first photoelectric conversion layer provided between the first upper electrode and the first lower electrode, a second upper electrode separated from the first upper electrode in a direction intersecting a first direction from the first lower electrode toward the first upper electrode, a second lower electrode provided between the second upper electrode and the substrate, and a second photoelectric conversion layer provided between the second upper electrode and the second lower electrode. The second upper electrode includes a first portion provided between the first photoelectric conversion layer and the second photoelectric conversion layer. The third lower region is disposed between the first portion and the substrate.
摘要翻译：根据一个实施例，太阳能电池模块包括衬底，第一上电极，设置在第一上电极和衬底之间的第一下电极，包括第一至第三下区的下中间层，设置在第一至第三下电极之间的第一光电转换层，所述第一上部电极和所述第一下部电极，与所述第一上部电极在与所述第一下部电极朝向所述第一上部电极的第一方向交叉的方向上分离的第二上部电极，设置在所述第二上部电极和所述第二上部电极之间的第二下部电极，衬底和设置在第二上电极和第二下电极之间的第二光电转换层。第二上电极包括设置在第一光电转换层和第二光电转换层之间的第一部分。第三下部区域设置在第一部分和基底之间。

5. 发明申请

US20230038775A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
公开(公告)号：US20230038775A1
公开(公告)日：2023-02-09
申请号：US17969742
申请日：2022-10-20
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
发明人： Haruhi OOOKA , Hideyuki Nakao , Kenji Fujinaga
IPC分类号： H01G9/20 , H01G9/00 , H01L51/00 , H01L51/42 , H01L51/44
摘要： A photoelectric conversion device includes: a substrate; a first photoelectric conversion element including a first substrate electrode, a first active layer and a first counter electrode; a second photoelectric conversion element including a second substrate electrode, a second active layer, and a second counter electrode; and a connection connecting the first counter electrode and the second substrate electrode. The second active layer is represented by a composition formula: AαBXχ, where A denotes at least one cation selected from monovalent cations, B denotes at least one cation selected from bivalent cations, and X denotes at least one ion selected from monovalent halogen ions; and the second active layer has a first and a second compound layer, the first compound layer containing a first compound satisfying 0.95≤α, and 2.95≤χ, and the second compound layer containing a second compound satisfying α

6. 发明申请

US20180026216A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180026216A1
公开(公告)日：2018-01-25
申请号：US15679286
申请日：2017-08-17
申请人： Kabushiki Kaisha Toshiba
发明人： Haruhi OOOKA , Atsuko llDA , Hideyuki NAKAO , Kenji TODORI , Takeshi GOTANDA
IPC分类号： H01L51/42 , H01L51/00
CPC分类号： H01L51/4253 , H01L51/0007 , H01L51/0026 , H01L51/0036 , H01L51/0043 , H01L51/0046 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C. R1—(CH2)n—R2 (1) Here, n: 1 to 20, and R1, R2: halogen or SH

7. 发明申请

US20170077402A1 PHOTOELECTRIC CONVERSION MATERIAL DISPERSION LIQUID AND PRODUCING METHOD THEREOF, PRODUCING METHOD AND PRODUCING APPARATUS OF PHOTOELECTRIC CONVERSION FILM, AND PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换材料分散液及其制造方法，制造方法和制造光电转换膜的装置和光电转换装置
公开(公告)号：US20170077402A1
公开(公告)日：2017-03-16
申请号：US15251588
申请日：2016-08-30
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Haruhi OOOKA , Hideyuki NAKAO , Mitsunaga SAITO
IPC分类号： H01L51/00 , H01L51/42
CPC分类号： H01L51/0007 , H01L51/0037 , H01L51/0047 , H01L51/0077 , H01L51/4246 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： A photoelectric conversion material dispersion liquid of an embodiment includes: perovskite crystal particles having a composition represented as ABX3, where A is a monovalent cation of an amine compound, B is a divalent cation of a metal element, and X is a monovalent anion of a halogen element, and having an average particle diameter of not less than 10 nm nor more than 10000 nm; and a dispersion medium which is composed of a poor solvent to the perovskite crystal particles, and in which the perovskite crystal particles are dispersed.
摘要翻译：实施方式的光电转换材料分散液包括：具有表示为ABX3的组成的钙钛矿晶体颗粒，其中A是胺化合物的一价阳离子，B是金属元素的二价阳离子，X是一价阴离子卤素元素，平均粒径不小于10nm，不大于10000nm; 以及由对于钙钛矿结晶粒子的不良溶剂构成的分散介质，其中分散有钙钛矿结晶粒子。

8. 发明申请

US20160293874A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20160293874A1
公开(公告)日：2016-10-06
申请号：US15079562
申请日：2016-03-24
申请人： Kabushiki Kaisha Toshiba
发明人： Haruhi OOOKA , Atsuko llDA , Hideyuki NAKAO , Kenji TODORI , Takeshi GOTANDA
IPC分类号： H01L51/42 , H01L51/00
CPC分类号： H01L51/4253 , H01L51/0007 , H01L51/0026 , H01L51/0036 , H01L51/0043 , H01L51/0046 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C. R1—(CH2)n—R2 (1) Here, n: 1 to 20, and R1, R2: halogen or SH
摘要翻译：这里，n：1〜20，R1，R2：卤素或SH

9. 发明申请

US20160285023A1 PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：光电转换元件和光电转换元件的制造方法
公开(公告)号：US20160285023A1
公开(公告)日：2016-09-29
申请号：US15075407
申请日：2016-03-21
申请人： Kabushiki Kaisha Toshiba
发明人： Haruhi OOOKA , Hideyuki Nakao
IPC分类号： H01L51/44 , H01L51/00
CPC分类号： H01L51/441 , H01L31/0224 , H01L31/022425 , H01L51/0005 , H01L51/0036 , H01L51/0043 , H01L51/4253 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： A photoelectric conversion element includes: a substrate having an element formation surface; a first electrode provided on the element formation surface and extending along one direction of the element formation surface up to an end portion of the element formation surface; a photoelectric conversion layer provided above the first electrode and including a first region having a first thickness and a second region extending from an end portion of the first region up to an end portion of the first electrode and having a second thickness larger than the first thickness; and a second electrode provided above the first and second regions and extending up to an end portion of the photoelectric conversion layer.
摘要翻译：光电转换元件包括：具有元件形成表面的衬底; 第一电极，设置在元件形成表面上并沿着元件形成表面的一个方向延伸到元件形成表面的端部; 光电转换层，设置在所述第一电极上方，并且包括具有第一厚度的第一区域和从所述第一区域的端部延伸到所述第一电极的端部并且具有大于所述第一厚度的第二厚度的第二区域 ; 以及设置在第一和第二区域上方并延伸到光电转换层的端部的第二电极。

10. 发明申请

US20200343394A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20200343394A1
公开(公告)日：2020-10-29
申请号：US16921702
申请日：2020-07-06
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Haruhi OOOKA , Hideyuki NAKAO
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/18 , H01L31/046 , H01L51/00
摘要： A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode provided on a transparent substrate, a first active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second active layer, and a second counter electrode. A conductive layer containing noble metal as a main component is formed on a partial region of the second transparent electrode, and a fine particle layer having a stack of fine particles is formed on the conductive layer. The first counter electrode and the second transparent electrode are electrically connected by a connection part having a scribe groove penetrating through the fine particle layer from the second active layer and exposing a surface of the conductive layer, and a conductive layer having a part of the first counter electrode filled in the scribe groove.

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