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1. 发明授权

US11205544B2 Sensor 有权
公开(公告)号：US11205544B2
公开(公告)日：2021-12-21
申请号：US16815218
申请日：2020-03-11
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akira Fujimoto , Hideyuki Tomizawa , Naofumi Nakamura
IPC分类号： H01G5/011 , H01G5/014 , B81B3/00 , H01G5/16 , G01P15/125
摘要： According to one embodiment, a sensor includes a base body, a first structure body, and a second structure body. The first structure body includes a first fixed portion, a first conductive portion, and first electrodes. The first fixed portion is fixed to the base body. The first conductive portion is held by the first fixed portion. The first conductive portion is separated from the base body in a first direction. The first electrodes are held by the first conductive portion. A distance between the base body and the first electrodes is changeable. The second structure body includes a second conductive portion and second electrodes. The second conductive portion is fixed to the base body. The second electrodes are held by the second conductive portion. One of the second electrodes is between the one of the first electrodes and the other one of the first electrodes.

2. 发明授权

US09837580B2 Semiconductor light emitting device 有权
公开(公告)号：US09837580B2
公开(公告)日：2017-12-05
申请号：US14202045
申请日：2014-03-10
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki Tomizawa , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Miyuki Shimojuku , Hideto Furuyama , Yoshiaki Sugizaki
IPC分类号： H01L33/36 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/14 , H01L33/20 , H01L33/46 , H01L33/48 , H01L33/00
CPC分类号： H01L33/36 , H01L33/0079 , H01L33/14 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/50 , H01L33/505 , H01L2933/0016
摘要： According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode. The corner is not in contact with the semiconductor layer. The straight portions of the n-side electrode are in contact with the semiconductor layer.

3. 发明授权

US09202992B2 Semiconductor light emitting device having a fluorescent substance layer 有权
标题翻译：具有荧光物质层的半导体发光器件
公开(公告)号：US09202992B2
公开(公告)日：2015-12-01
申请号：US14338684
申请日：2014-07-23
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki Tomizawa , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideto Furuyama , Yoshiaki Sugizaki
IPC分类号： H01L31/02 , H01L33/42 , H01L51/52 , H01L33/50 , H01L33/46 , H01L33/10 , H01L33/00 , H01L31/0232
CPC分类号： H01L33/502 , H01L31/02322 , H01L33/0008 , H01L33/0079 , H01L33/10 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/501 , H01L33/505 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62 , H01L51/5234 , H01L2933/0025 , H01L2933/0033
摘要： A semiconductor light emitting device includes a semiconductor layer, a p-side and an n-side interconnect portions, a fluorescent substance layer and a transparent layer. The semiconductor layer has a first major surface, a second major surface, and a first side surface, the semiconductor layer including a light emitting layer. The p-side and n-side interconnect portions are electrically connected to the semiconductor layer. The fluorescent substance layer is provided on the first major surface side. The transparent layer is provided between the semiconductor layer and the fluorescent substance layer, and has a second side surface. The device further includes an insulating film covering the first side surface and the second side surface, and a reflecting member covering the first side surface and the second side surface via the insulating film.
摘要翻译：半导体发光器件包括半导体层，p侧和n侧互连部分，荧光物质层和透明层。半导体层具有第一主表面，第二主表面和第一侧表面，所述半导体层包括发光层。 p侧和n侧互连部分电连接到半导体层。荧光物质层设置在第一主表面侧。透明层设置在半导体层与荧光物质层之间，具有第二侧面。该装置还包括覆盖第一侧表面和第二侧表面的绝缘膜，以及经由绝缘膜覆盖第一侧表面和第二侧表面的反射构件。

4. 发明授权

US09024346B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09024346B2
公开(公告)日：2015-05-05
申请号：US13848134
申请日：2013-03-21
申请人： Kabushiki Kaisha Toshiba
发明人： Yosuke Akimoto , Akihiro Kojima , Miyoko Shimada , Hideyuki Tomizawa , Yoshiaki Sugizaki , Hideto Furuyama
IPC分类号： H01L33/50 , H01L33/44
CPC分类号： H01L33/50 , H01L33/44 , H01L33/508
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode and a fluorescent material layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The fluorescent material layer includes a plurality of fluorescent materials and a bonding material integrating the fluorescent materials. The fluorescent material layer includes a lower layer portion provided to spread over the entire first surface and having a larger thickness than a size of the fluorescent materials and an upper layer portion partially provided on the lower layer portion and having a larger thickness and a larger width than a size of the fluorescent materials. The fluorescent materials do not exist on a portion of the lower layer portion not provided with the upper layer portion.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极和荧光材料层。半导体层具有与第一表面相反一侧的第一表面和第二表面，并且包括发光层。荧光材料层包括多个荧光材料和整合荧光材料的接合材料。荧光材料层包括设置在整个第一表面上并且具有比荧光材料的尺寸更大的厚度的下层部分和部分地设置在下层部分上并具有较大厚度和较大宽度的上层部分比荧光材料的大小。荧光材料不存在于未设置上层部分的下层部分的一部分上。

5. 发明授权

US08937331B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08937331B2
公开(公告)日：2015-01-20
申请号：US13847643
申请日：2013-03-20
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki Tomizawa , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Yoshiaki Sugizaki , Hideto Furuyama
IPC分类号： H01L33/50
CPC分类号： H01L33/502 , H01L25/0753 , H01L33/504 , H01L2224/16225 , H01L2924/0002 , H01L2924/15192 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes: a mounting substrate; a semiconductor light emitting element; a first resin; and a second resin. The semiconductor light emitting element includes: a semiconductor layer including a light emitting layer; a p-side electrode; a p-side interconnection unit; an n-side electrode; and an n-side interconnection unit. The first resin covers a periphery of the semiconductor light emitting element on the substrate and contains a phosphorescent substance capable of being excited by emission light of the light emitting layer. The second resin is provided on the first resin layer and the semiconductor light emitting element and contains a fluorescent body capable of being excited by emission light of the light emitting layer to emit light of a different peak wavelength from emission light of the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括：安装基板; 半导体发光元件; 第一树脂; 和第二树脂。半导体发光元件包括：包含发光层的半导体层; p侧电极; p侧互连单元; n侧电极; 和n侧互连单元。第一树脂覆盖基板上的半导体发光元件的周边，并且包含能够被发光层的发射光激发的磷光物质。第二树脂设置在第一树脂层和半导体发光元件上，并且包含能够被发光层的发射光激发的荧光体，以发射与发光层的发射光不同的峰值波长的光。

6. 发明授权

US09444013B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09444013B2
公开(公告)日：2016-09-13
申请号：US13778005
申请日：2013-02-26
申请人： Kabushiki Kaisha Toshiba
发明人： Miyoko Shimada , Akihiro Kojima , Yosuke Akimoto , Hideto Furuyama , Hideyuki Tomizawa , Yoshiaki Sugizaki
IPC分类号： H01L33/38 , H01L33/00 , H01L33/46 , H01L33/50 , H01L33/48
CPC分类号： H01L33/38 , H01L33/007 , H01L33/0079 , H01L33/46 , H01L33/486 , H01L33/505 , H01L33/507 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side interconnection section, an n-side interconnection section, a phosphor layer, and a metal film. The semiconductor layer is formed on a substrate which is then removed. The p-side interconnection section is provided on the insulating film and electrically connected to the p-side electrode. The n-side interconnection section is provided on the insulating film and electrically connected to the n-side electrode. The phosphor layer is provided on the first surface and includes a step portion continued to the side surface of the semiconductor layer. The metal film is provided on the side surface of the semiconductor layer and a side surface of the step portion of the phosphor layer.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极，绝缘膜，p侧互连部，n侧互连部，荧光体层和金属膜。半导体层形成在衬底上，然后被去除。 p侧互连部设置在绝缘膜上并与p侧电极电连接。 n侧互连部设置在绝缘膜上并与n侧电极电连接。荧光体层设置在第一表面上，并且包括连续于半导体层的侧表面的台阶部分。金属膜设置在半导体层的侧表面和荧光体层的台阶部分的侧表面上。

7. 发明授权

US09041033B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09041033B2
公开(公告)日：2015-05-26
申请号：US13781617
申请日：2013-02-28
申请人： Kabushiki Kaisha Toshiba
发明人： Yosuke Akimoto , Yoshiaki Sugizaki , Akihiro Kojima , Miyoko Shimada , Hideyuki Tomizawa , Hideto Furuyama
IPC分类号： H01L33/00 , H01L33/36 , H01L33/60 , H01L33/38 , H01L33/40 , H01L33/62
CPC分类号： H01L33/405 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/60 , H01L33/62 , H01L2224/13 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层，p侧电极，多个n侧电极，第一绝缘膜，p侧互连单元和n侧互连单元。 p侧互连单元设置在第一绝缘膜上，以通过穿过第一绝缘膜的第一通孔连接到p侧电极。 n侧互连单元设置在第一绝缘膜上，以通过刺穿第一绝缘膜的第二通孔共同连接到多个n侧电极。多个n侧区域彼此分离，而不在第二表面处被连接。 p侧区域设置在第二表面的n侧区域的周围。

8. 发明授权

US08933476B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08933476B2
公开(公告)日：2015-01-13
申请号：US13848140
申请日：2013-03-21
申请人： Kabushiki Kaisha Toshiba
发明人： Yosuke Akimoto , Akihiro Kojima , Miyoko Shimada , Hideyuki Tomizawa , Yoshiaki Sugizaki , Hideto Furuyama
IPC分类号： H01L33/00 , H01L33/50 , H01L33/44
CPC分类号： H01L33/502 , H01L33/0008 , H01L33/0075 , H01L33/44 , H01L33/50 , H01L33/58 , H01L2933/0041 , H01L2933/0058 , H01L2933/0091
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极，荧光材料层和散射层。半导体层具有与第一表面相反一侧的第一表面和第二表面，并且包括发光层。 p侧电极和n侧电极设置在第二表面侧的半导体层上。荧光材料层设置在第一表面的一侧，并且包括多个荧光材料和第一接合材料。第一粘合材料集成荧光材料。散射层设置在荧光体层上，包含散射物质和第二接合材料。散射材料被配置为散射发光层的辐射光。第二粘合材料集成散射材料。

9. 发明授权

US11460482B2 Sensor with fixed and movble components 有权
公开(公告)号：US11460482B2
公开(公告)日：2022-10-04
申请号：US16815148
申请日：2020-03-11
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akira Fujimoto , Hideyuki Tomizawa , Akiko Yuzawa , Naofumi Nakamura
IPC分类号： G01P15/125 , G01P15/08
摘要： According to one embodiment, a sensor includes a base body, a first movable structure body, and a first fixed structure body. The first movable structure body includes first movable electrodes. A direction from the base body toward the first movable electrodes is aligned with a first direction. A distance between the base body and the plurality of first movable electrodes is changeable. A direction from one of the first movable electrodes toward an other one of the first movable electrodes is aligned with a second direction crossing the first direction. The first fixed structure body includes first fixed electrodes. One of the first fixed electrodes is between the one of the first movable electrodes and the other one of the first movable electrodes. A first movable electrode length along the first direction is shorter than a first fixed electrode length along the first direction.

10. 发明授权

US09887328B2 Semiconductor light emitting device and method for manufacturing same 有权
公开(公告)号：US09887328B2
公开(公告)日：2018-02-06
申请号：US14328048
申请日：2014-07-10
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki Tomizawa , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideko Mukaida , Mitsuyoshi Endo , Hideto Furuyama , Yoshiaki Sugizaki , Kazuo Fujimura , Shinya Ito , Shinji Nunotani
IPC分类号： H01L29/06 , H01L33/54 , H01L33/00 , H01L33/46 , H01L33/50 , H01L33/60
CPC分类号： H01L33/54 , H01L33/0079 , H01L33/46 , H01L33/505 , H01L33/60 , H01L2933/0025 , H01L2933/005
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

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