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1. 发明申请

US20190140613A1 ACOUSTIC WAVE ELEMENT AND COMMUNICATION APPARATUS 审中-公开
公开(公告)号：US20190140613A1
公开(公告)日：2019-05-09
申请号：US16096200
申请日：2017-04-26
申请人： KYOCERA Corporation
发明人： Masaya KAWAGUCHI , Tetsuya KISHINO
IPC分类号： H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64 , H03H9/72
CPC分类号： H03H9/02866 , H03H9/02992 , H03H9/145 , H03H9/14538 , H03H9/25 , H03H9/6489 , H03H9/725
摘要： In an IDT electrode of an acoustic wave element which includes first electrode fingers and second electrode fingers connected to potentials which are different from each other and arranged spaced apart from each other, the first electrode fingers includes first tip parts, and either of the first electrode fingers and the second electrode fingers includes, at a tip area extending along a direction of propagation of an acoustic wave and overlapping with the first tip parts, increase sections in which electrode volumes per unit lengths in a direction of extension of the first electrode fingers and the second electrode fingers are larger in comparison with that of the center area in which the electrode fingers intersect.

2. 发明申请

US20200287519A1 ACOUSTIC WAVE ELEMENT AND COMMUNICATION APPARATUS 审中-公开
公开(公告)号：US20200287519A1
公开(公告)日：2020-09-10
申请号：US16089684
申请日：2017-03-29
申请人： KYOCERA Corporation
发明人： Tetsuya KISHINO , Tsuyoshi NAKAI
IPC分类号： H03H9/25 , H03H9/00 , H03H9/02 , H03H9/145 , H03H9/64 , H03H9/72 , H04B1/00
摘要： An acoustic wave element includes an IDT electrode includes pluralities of electrode fingers, and reflector electrodes on the two sides of the IDT electrode. The IDT electrode includes a major part and at least one end part which is located between the major part and one of the reflector electrodes and is arranged along a direction of propagation of an acoustic wave together with the major part. the at least one end part includes a pitch of the plurality of electrode fingers substantially the same as a pitch of the plurality of electrode fingers in the major part, is electrically connected in parallel with respect to the major part, and is divided into two or more sections which are electrically connected in series with each other.

3. 发明申请

US20200186124A1 ACOUSTIC WAVE ELEMENT, FILTER ELEMENT, AND COMMUNICATION APPARATUS 审中-公开
公开(公告)号：US20200186124A1
公开(公告)日：2020-06-11
申请号：US16628568
申请日：2018-07-05
申请人： KYOCERA Corporation
发明人： Naofumi KASAMATSU , Masahisa SHIMOZONO , Tetsuya KISHINO , Masaki NANBU , Hongnian LI , Tatsuya DOUMOTO
IPC分类号： H03H9/145 , H03H9/25 , H03H9/02 , H03H9/64
摘要： An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.

4. 发明申请

US20190036554A1 ACOUSTIC WAVE RESONATOR, ACOUSTIC WAVE FILTER, MULTIPLEXER, AND COMMUNICATION APPARATUS 审中-公开
公开(公告)号：US20190036554A1
公开(公告)日：2019-01-31
申请号：US16072585
申请日：2017-01-27
申请人： KYOCERA Corporation
发明人： Motoki ITO , Tetsuya KISHINO , Tsuyoshi NAKAI
IPC分类号： H04B1/00 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64 , H03H9/72
CPC分类号： H04B1/0057 , H03H9/02559 , H03H9/02637 , H03H9/02685 , H03H9/02929 , H03H9/14582 , H03H9/25 , H03H9/6483 , H03H9/725
摘要： An SAW resonator includes a piezoelectric substrate, an IDT electrode, and a pair of reflectors. The IDT electrode includes pluralities of electrode fingers which are aligned on the piezoelectric substrate in a direction of propagation of a SAW. The pair of reflectors are located on the two sides of the pluralities of electrode fingers on the piezoelectric substrate in the direction of propagation. The IDT electrode includes a plurality of areas which includes pluralities of electrode fingers distributed to them and have different resonance frequencies from each other. The plurality of areas include at least three areas. The second highest resonance frequency among all areas is lower than an intermediate value between the lowest resonance frequency among all areas and the highest resonance frequency among all areas.

5. 发明申请

US20220271729A1 ACOUSTIC WAVE DEVICE, MULTIPLEXER, AND COMMUNICATION APPARATUS 有权
公开(公告)号：US20220271729A1
公开(公告)日：2022-08-25
申请号：US17744353
申请日：2022-05-13
申请人： KYOCERA Corporation
发明人： Motoki ITO , Tetsuya KISHINO
IPC分类号： H03H9/02 , H04B1/00
摘要： An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode on the LT layer. In the multilayer film, a differential value obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer is negative, and a thickness of the LT layer is less than p and a thickness of the multilayer film is less than p where a pitch of electrode fingers in the IDT electrode is “p”.

6. 发明申请

US20200287513A1 COMPOSITE SUBSTRATE AND ACOUSTIC WAVE ELEMENT USING SAME 审中-公开
公开(公告)号：US20200287513A1
公开(公告)日：2020-09-10
申请号：US16305646
申请日：2017-05-30
申请人： KYOCERA Corporation
发明人： Daisuke YAMAMOTO , Tetsuya KISHINO
IPC分类号： H03H9/02 , H03H9/17 , H03H9/25
摘要： A composite substrate 10 includes a first substrate 10 comprised of a piezoelectric single crystal and a second substrate 20 comprised of a silicon single crystal bonded to the first substrate 10. In the second substrate, a planar orientation is (111), and ψ of Euler angles (φ, θ, ψ) is offset from 0°. Due to this, a bulk wave spurious is reduced in a specific frequency band.

7. 发明申请

US20160126932A1 DUPLEXER AND COMMUNICATION MODULE 有权
标题翻译：双工和通信模块
公开(公告)号：US20160126932A1
公开(公告)日：2016-05-05
申请号：US14896334
申请日：2014-06-04
申请人： KYOCERA CORPORATION
发明人： Tsuyoshi NAKAI , Tetsuya KISHINO , Masahisa SHIMOZONO , Yuriko NISHIMURA
IPC分类号： H03H9/76 , H04B7/24 , H03H9/64 , H04L5/14
CPC分类号： H03H9/76 , H03H9/0038 , H03H9/02755 , H03H9/542 , H03H9/6406 , H03H9/6483 , H03H9/6489 , H03H9/725 , H04B7/24 , H04L5/14
摘要： A branching 1 filter has an antenna terminal 3 which receives signal waves and disturbance waves, a transmission filter 11 which is connected to the antenna terminal 3, a reception filter 13 which is connected to the antenna terminal 3 and receives a portion of the signal waves and has, as a passband, a frequency range higher than a passband of the transmission filter 11, and a disturbance wave resonator which is connected to the antenna terminal 3 and to the ground and positioned closer to the antenna terminal 3 side than the transmission filter 11 and the reception filter 13. The disturbance wave resonator 15 is connected to antenna terminal 3 at a position closer to the antenna terminal 3 side than the transmission filter 11 and the reception filter 13. A resonance frequency of the disturbance wave resonator 15 is within a frequency range smaller than the passband of the transmission filter and includes a frequency range of the disturbance waves.
摘要翻译：分支1滤波器具有接收信号波和干扰波的天线端子3，连接到天线端子3的发射滤波器11，连接到天线端子3并接收信号波的一部分的接收滤波器13 并且作为通带具有高于发送滤波器11的通带的频率范围，以及与发送滤波器11连接的天线端子3和接地并位于更靠近天线端子3侧的干扰波谐振器 11和接收滤波器13.干扰波谐振器15在比发送滤波器11和接收滤波器13更靠近天线端子3侧的位置处连接到天线端子3.干扰波谐振器15的谐振频率在频率范围小于发送滤波器的通带，并且包括干扰波的频率范围。

8. 发明申请

US20210152153A1 ACOUSTIC WAVE ELEMENT, ACOUSTIC WAVE FILTER, MULTIPLEXER, AND COMMUNICATION APPARATUS 有权
公开(公告)号：US20210152153A1
公开(公告)日：2021-05-20
申请号：US17046710
申请日：2019-04-03
申请人： KYOCERA Corporation
发明人： Tetsuya KISHINO
IPC分类号： H03H9/64 , H03H9/05 , H03H9/145 , H03H9/02 , H03H9/25
摘要： In a SAW element, a piezoelectric layer is laid over a support substrate. An IDT electrode includes a main region and two end regions on two sides of the main region. The end region continues from a portion where electrode finger design is modified up to the end part. A resonance frequency determined by electrode finger design of reflector electrode fingers is lower than a resonance frequency determined by electrode finger design of electrode fingers in the main region. An interval between centers of the electrode fingers in the main region is defined as “a”. Number of electrode fingers configuring the end region is defined as “m”. A distance between a center of an electrode finger among the electrode fingers in the main region which is located on a side closest to the end region and a center of a reflector electrode finger among the reflector electrode fingers which is located on a side closest to the end region is defined as “x”. At this time, the following relationship is satisfied: 0.5×a×(m+1)

9. 发明申请

US20200287515A1 COMPOSITE SUBSTRATE AND ACOUSTIC WAVE ELEMENT USING SAME 审中-公开
公开(公告)号：US20200287515A1
公开(公告)日：2020-09-10
申请号：US16758159
申请日：2018-10-23
申请人： KYOCERA Corporation
发明人： Motoki ITO , Tetsuya KISHINO , Soichiro NOZOE
IPC分类号： H03H9/02 , H03H9/145 , H03H9/25
摘要： A composite substrate includes a first substrate which is comprised of a lithium tantalate crystal and has Euler angles (0, α, γ), and a second substrate which is comprised of a single crystal of silicon bonded to the first substrate and has Euler angles (−45, −54.7, β). In the composite substrate, α is −40° to −60° or 120° to 140° and γ is 0° or 180°, and either of following conditions is satisfied. (1) β is in a range of β=γ±20° and its equivalent orientation and (2) β is in a range of γ+160°≤β≤γ+200°.

10. 发明申请

US20200028486A1 ACOUSTIC WAVE ELEMENT 审中-公开
公开(公告)号：US20200028486A1
公开(公告)日：2020-01-23
申请号：US16485759
申请日：2018-02-14
申请人： KYOCERA Corporation
发明人： Tetsuya KISHINO , Motoki ITO
IPC分类号： H03H9/25 , H03H9/145 , H03H9/02
摘要： An acoustic wave element includes an IDT electrode including electrode fingers, a first substrate on an upper surface of which the IDT electrode is located, which has a thickness of less than 2 times a repetition interval of the electrode fingers and is configured by a piezoelectric crystal, a second substrate bonded to a lower surface of the first substrate, and configured by an Si single crystal having a plane orientation of a (100) plane or (110) plane or a plane equal to them, in which substrate a crystal axis of the Si single crystal parallel to a substrate surface of Si single crystal is inclined at any angle of 25° to 65°, 115° to 155°, 205° to 245°, and 295° to 345° relative to a direction of propagation of an acoustic wave when viewed from the upper surface of the superposed first substrate.

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