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1. 发明申请

US20160016143A1 APPARATUS FOR MANUFACTURING Si-BASED NANO-PARTICLES USING PLASMA 审中-公开
标题翻译：用于制造使用等离子体的Si基纳米颗粒的装置
公开(公告)号：US20160016143A1
公开(公告)日：2016-01-21
申请号：US14800670
申请日：2015-07-15
申请人： KOREA INSTITUTE OF ENERGY RESEARCH
发明人： Bo-Yun JANG , Jin-Seok LEE , Joon-Soo KIM , Jeong-Boon KOO
IPC分类号： B01J19/08 , B01J19/12
CPC分类号： B01J19/088 , B01J2219/0801 , B01J2219/0809 , B01J2219/0816 , B01J2219/0822 , B01J2219/0839 , B01J2219/0869 , B01J2219/0877 , B01J2219/089 , B01J2219/0894 , C01B32/05 , C01B33/027 , C01B33/113
摘要： Disclosed herein is an apparatus for manufacturing silicon-based nanoparticles such as Si—C composite and SiOx using plasmas. An apparatus for manufacturing silicon-based nanoparticles in accordance with one embodiment of the present disclosure comprises a reaction chamber for providing a reaction space; a plasma torch for generating plasma to decompose silicon (Si) precursors and produce Si particles, provided on an upper portion of the reaction chamber; a cooling part for cooling Si particles supplied into the reaction chamber, provided within the reaction chamber; and a carbon material supplying part for supplying carbonaceous materials or carbon precursors into the reaction chamber.
摘要翻译：本文公开了使用等离子体制造诸如Si-C复合材料和SiOx的硅基纳米颗粒的装置。根据本公开的一个实施例的用于制造硅基纳米颗粒的装置包括用于提供反应空间的反应室; 用于产生等离子体以分解硅（Si）前体并产生Si颗粒的等离子体焰炬，其设置在反应室的上部; 设置在反应室内的用于冷却供给到反应室内的Si粒子的冷却部，以及用于将碳质材料或碳前体供给到反应室中的碳材料供给部。

2. 发明申请

US20180133928A1 SILICON INGOT SLICING APPARATUS USING MICROBUBBLES AND WIRE ELECTRIC DISCHARGE MACHINING 审中-公开
公开(公告)号：US20180133928A1
公开(公告)日：2018-05-17
申请号：US15584481
申请日：2017-05-02
申请人： KOREA INSTITUTE OF ENERGY RESEARCH
发明人： Bo-Yun JANG , Joon-Soo KIM , Hui-Chan MOON , Sun-Ho CHOI
IPC分类号： B28D5/04 , B28D5/00 , B26D7/27 , B23Q11/14 , B23Q11/12 , B26D3/28
CPC分类号： B28D5/045 , B23H1/08 , B23H7/02 , B23H7/38 , B23H9/00 , B23Q11/122 , B23Q11/145 , B26D3/28 , B26D7/27 , B28D5/0058 , C10N2240/06 , C10N2240/401
摘要： Provided are a silicon ingot slicing apparatus capable of slicing silicon ingots in various forms such as blocks or wafers using microbubbles and wire electric discharge machining.

3. 发明申请

US20160020463A1 MANUFACTURING APPARATUS OF HIGH PURITY MOx NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：高纯度MOX纳米结构的制造装置及其制造方法
公开(公告)号：US20160020463A1
公开(公告)日：2016-01-21
申请号：US14767578
申请日：2013-02-13
申请人： KOREA INSTITUTE OF ENERGY RESEARCH
发明人： Bo-Yun JANG , Joon-Soo KIM , Jin-Seok LEE
IPC分类号： H01M4/48 , C23C16/22 , C23C16/455
CPC分类号： H01M4/483 , B82Y40/00 , C23C16/22 , C23C16/45563 , H01M4/0471 , H01M2004/021 , H01M2004/027 , H01M2004/028
摘要： There is disclosed that a MOx nanostructure manufacturing apparatus and a manufacturing method thereof can not only supply a reaction gas more effectively to the surface of a molten metal with ease by injecting a carrier gas to the surface of the molten metal above a graphite crucible as well as bringing the reaction gas in the lower side of the graphite crucible, but also maximize volatilization rates through an inflow of the reaction gas from the lower portion toward the upper of the graphite crucible.
摘要翻译：公开了一种MOx纳米结构体的制造装置及其制造方法，不仅可以通过将载气向金属坩埚上方的熔融金属表面注入，而且能够更有效地向熔融金属表面供给反应气体因为将反应气体引入石墨坩埚的下侧，而且通过反应气体从下部向石墨坩埚的上方流入也使挥发速度最大化。

4. 发明申请

US20160152480A1 APPARATUS FOR PRODUCING Si NANOPARTICLES USING MICROWAVE PLASMA AND PRODUCTION METHOD USING THE SAME 审中-公开
标题翻译：使用微波等离子体生产硅纳米微粒的装置及使用其的生产方法
公开(公告)号：US20160152480A1
公开(公告)日：2016-06-02
申请号：US14712545
申请日：2015-05-14
申请人： KOREA INSTITUTE OF ENERGY RESEARCH
发明人： Bo-Yun JANG , Joon-Soo KIM , Jin-Seok LEE , Sun-Ho CHOI , Jeong-Boon KOO
IPC分类号： C01B33/027 , B01J19/12 , H01M4/36 , H01M4/38 , H01M10/0525
CPC分类号： C01B33/027 , B01J19/088 , B01J2219/0869 , B01J2219/0875 , B01J2219/0894 , H01M4/386 , H01M10/0525
摘要： An apparatus for producing Si nanoparticles using microwave plasma and a method of producing Si nanoparticles using the same are disclosed.
摘要翻译：公开了一种使用微波等离子体制造Si纳米颗粒的装置和使用其制造Si纳米颗粒的方法。

5. 发明申请

US20140301910A1 APPARATUS FOR PREPARING SILICON NANOPARTICLE USING ICP 有权
标题翻译：使用ICP制备硅烷纳米粒子的方法
公开(公告)号：US20140301910A1
公开(公告)日：2014-10-09
申请号：US14068797
申请日：2013-10-31
申请人： Korea Institute of Energy Research
发明人： Bo-Yun Jang , Joon-Soo KIM , Jin-Seok LEE
IPC分类号： B01J19/08
CPC分类号： B01J19/08 , B01J19/088 , B01J2208/00681 , B01J2219/0849 , B01J2219/0869 , B01J2219/0871 , B01J2219/0879 , B01J2219/0883 , B01J2219/0894 , C01B33/027
摘要： Disclosed is an apparatus for preparing silicon nanoparticles. The apparatus includes a corona discharge section charging silicon nanoparticles to exhibit unipolarity in order to prevent agglomeration of the silicon nanoparticles after the silicon nanoparticles are generated from an injected gas by plasma reaction of an inductively coupled plasma (ICP) coil. The apparatus may facilitate grain size control of silicon nanoparticles while improving discharge performance of a mesh filter for collection of generated nanoparticles by preventing agglomeration of the silicon nanoparticles generated by plasma reaction using inductively coupled plasma (ICP), and may permit replacement of the mesh filter even during operation of the apparatus, thereby improving productivity while reducing manufacturing costs.
摘要翻译：公开了一种用于制备硅纳米颗粒的装置。该装置包括一个电晕放电部分，其对硅纳米颗粒进行充电以显示单极性，以便在通过电感耦合等离子体（ICP）线圈的等离子体反应从注入的气体产生硅纳米颗粒之后，防止硅纳米颗粒的聚集。该设备可以促进硅纳米颗粒的晶粒尺寸控制，同时通过防止通过使用电感耦合等离子体（ICP）的等离子体反应产生的硅纳米颗粒的聚集来改善用于收集生成的纳米颗粒的网状过滤器的放电性能，并且可以允许更换网状过滤器即使在设备的操作期间，从而在降低制造成本的同时提高生产率。

6. 发明申请

US20160362302A1 APPARATUS FOR PRODUCING SILICON NANOPARTICLE USING INDUCTIVE COUPLED PLASMA 有权
标题翻译：使用电感耦合等离子体生产硅纳米粒子的装置
公开(公告)号：US20160362302A1
公开(公告)日：2016-12-15
申请号：US15039206
申请日：2013-11-25
申请人： KOREA INSTITUTE OF ENERGY RESEARCH
发明人： Bo-Yun JANG , Joon-Soo KIM , Hee-Eun SONG
IPC分类号： C01B33/029 , B01J19/08
CPC分类号： C01B33/029 , B01J19/088 , B01J2219/0869 , B01J2219/0871 , B01J2219/0883 , B01J2219/0894 , B01J2219/1203 , C01B33/021 , C01P2004/64
摘要： An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.
摘要翻译：使用ICP制造硅纳米颗粒的装置包括：气体供给部，其中用于将相应的第一和第二气体引入等离子体反应器的第一和第二管交替排列，第一管从反应器的入口延伸到等离子体引发地区; 等离子体反应部件具有缠绕在其周围的ICP线圈，其中通过各个管道引入的气体形成颗粒进行等离子体反应; 以及用于收集颗粒的收集部件。该设备可以充分混合通过第一气体供应管引入的气体，从而允许第一和第二气体之间的均匀等离子体反应，最小化等离子体膨胀以在短的保留时间内增加等离子体密度，通过淬灭和捕获纳米颗粒容易控制尺寸分布并且通过防止具有冷却气体的颗粒的二次聚集来提高生产率。

7. 发明申请

US20160002055A1 SiOx NANOPARTICLE MANUFACTURING APPARATUS INCLUDING CRUCIBLE FOR SILICON MELTING HAVING SLIDING TYPE TAPPING STRUCTURE AND MANUFACTURING METHOD OF SiOx NANOPARTICLE USING THE SAME 有权
标题翻译： SiOx纳米晶体制造装置，其中包括具有滑动型剥离结构的硅熔体的可溶性和使用其的SiOx纳米颗粒的制造方法
公开(公告)号：US20160002055A1
公开(公告)日：2016-01-07
申请号：US14767575
申请日：2013-02-13
申请人： KOREA INSTITUTE OF ENERGY RESEARCH
发明人： Joon-Soo KIM , Bo-Yun JANG , Jin-Seok LEE
IPC分类号： C01B33/18 , B01J19/24
CPC分类号： C01B33/181 , B01J19/24 , B01J2219/00132 , B01J2219/24
摘要： Disclosed herein are a SiOx nanoparticle manufacturing apparatus that can not only manufacture a SiOx nanoparticle in large quantities but also prevent a silicon melt residue from being stuck and solidified on an inner bottom surface of a crucible by designing a sliding type tapping structure, and a SiOx nanoparticle manufacturing method using the same.
摘要翻译：本文公开了一种SiO x纳米颗粒制造装置，其不仅可以大量制造SiO x纳米颗粒，而且还可以通过设计滑动型攻丝结构来防止硅熔体残留物在坩埚的内底表面上粘附和固化，并且SiO x 纳米颗粒制造方法使用该方法。

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