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1. 发明申请

US20040057495A1 Microwave power sensor and method for manufacturing the same 失效
标题翻译：微波功率传感器及其制造方法
公开(公告)号：US20040057495A1
公开(公告)日：2004-03-25
申请号：US10287585
申请日：2002-11-05
申请人： KOREA ELECTONICS TECHNOLOGY INSTITUTE
发明人： Dae Sung Lee , Kyung Il Lee , Hak In Hwang
IPC分类号： G01K007/00
CPC分类号： G01R21/04 , G01K11/006
摘要： The present invention relates to a microwave power sensor and a method for manufacturing the same. The microwave power sensor comprises a semiconductor substrate with a nitride or oxide film formed thereon; a membrane which is a portion of the nitride or oxide film floated by removing a portion of the semiconductor substrate; first and second thermocouple groups formed to be symmetrically spaced apart from each other on the membrane; an RF input end formed on the nitride or oxide film; a heating resistor formed on the membrane to be connected with the RF input end; first and second ground plates formed on the nitride or oxide film at both sides of the RF input end; a third ground plate formed on the nitride or oxide film to be connected with the heating resistor and electrically connected with the first and second ground plates; and first and second output terminals formed on the semiconductor substrate to be connected with the first and second thermocouple groups, respectively. According to the present invention, the heating resistor is connected with the input end and the thermocouples are formed to be bilaterally symmetrical with respect to the heating resistor, so that it is easy to match impedance, an amount of reflection loss due to any parasitic components is small, and the linear output voltage proportional to the input electric power is obtained. Further, since the ground plates capable of radiating heat are formed to be spaced apart from and around the heating resistor, its thermal impedance becomes higher. Thus, there is an advantage in that the sensitivity of the sensor can be enhanced.
摘要翻译：本发明涉及一种微波功率传感器及其制造方法。微波功率传感器包括其上形成有氮化物或氧化物膜的半导体衬底; 膜，其是通过去除半导体衬底的一部分而漂浮的氮化物或氧化物膜的一部分; 形成为在膜上彼此对称地间隔开的第一和第二热电偶组; 形成在氮化物或氧化物膜上的RF输入端; 形成在所述膜上以与所述RF输入端连接的加热电阻器; 形成在RF输入端两侧的氮化物或氧化物膜上的第一和第二接地板; 形成在所述氮化物或氧化物膜上以与所述加热电阻器连接并与所述第一和第二接地板电连接的第三接地板; 以及分别形成在半导体衬底上以与第一和第二热电偶组连接的第一和第二输出端子。根据本发明，加热电阻器与输入端连接，并且热电偶相对于加热电阻器形成为双向对称的，使得容易匹配阻抗，由于任何寄生元件引起的反射损耗量小，并且获得与输入电力成比例的线性输出电压。此外，由于能够散热的接地板形成为与加热电阻体隔开并且在其周围，其热阻抗变高。因此，存在可以提高传感器的灵敏度的优点。

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