专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11018033B2 Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium 有权
公开(公告)号：US11018033B2
公开(公告)日：2021-05-25
申请号：US16563466
申请日：2019-09-06
申请人： KOKUSAI ELECTRIC CORPORATION
发明人： Yukitomo Hirochi , Kazuhiro Yuasa , Tetsuo Yamamoto , Yoshihiko Yanagisawa , Shinya Sasaki , Noriaki Michita
IPC分类号： H01L21/00 , H01L21/67 , H01L21/324 , H01L21/677
摘要： There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.

2. 发明授权

US10943806B2 Substrate processing apparatus, method of manufacturing semiconductor device, and non- transitory computer-readable recording medium 有权
公开(公告)号：US10943806B2
公开(公告)日：2021-03-09
申请号：US16103611
申请日：2018-08-14
申请人： KOKUSAI ELECTRIC CORPORATION
发明人： Kazuyuki Toyoda , Kazuhiro Yuasa , Tetsuo Yamamoto
IPC分类号： H01L21/677 , H01L21/67 , H01L21/687 , C23C16/46
摘要： A substrate processing technique includes: a first heating device configured to heat a substrate to a first processing temperature; a first process chamber provided with the first heating device; a second heating device configured to heat the substrate to a second processing temperature utilizing microwaves, the second processing temperature being higher than the first processing temperature; a second process chamber provided with the second heating device; a substrate placement portion configured to load and unload the substrate with respect to the first process chamber and the second process chamber by placing and rotating the substrate; and a controller configured to respectively control the first heating device, the second heating device, and the substrate placement portion.

3. 发明申请

US20220384206A1 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM 有权
公开(公告)号：US20220384206A1
公开(公告)日：2022-12-01
申请号：US17751203
申请日：2022-05-23
申请人： KOKUSAI ELECTRIC CORPORATION
发明人： Shinya Sasaki , Noriaki Michita , Katsuhiko Yamamoto , Takashi Nakagawa , Kazuhiro Yuasa
IPC分类号： H01L21/324 , H01L21/67
摘要： There is provided a technique that include: a process chamber configured to process a substrate at which at least one target film and a heat assist film are formed; and an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber, wherein when the substrate is irradiated with the electromagnetic wave, the heat assist film generates heat and the at least one target film is modified by the heat.

4. 发明授权

US10290494B2 Method of manufacturing semiconductor device and method of processing substrate 有权
公开(公告)号：US10290494B2
公开(公告)日：2019-05-14
申请号：US15208708
申请日：2016-07-13
申请人： Kokusai Electric Corporation
发明人： Masanao Fukuda , Takafumi Sasaki , Kazuhiro Yuasa
IPC分类号： H01L21/02 , H01L21/316 , C23C16/40 , C23C16/455 , C23C16/458 , C23C16/52
摘要： A substrate processing apparatus including: a reaction tube configured to process a plurality of substrates; a heater configured to heat an inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a hydrogen-containing gas supply system including a first nozzle disposed in an area which horizontally surrounds a substrate arrangement area where the plurality of substrates are arranged, and configured to supply a hydrogen-containing gas from a plurality of locations of the area into the reaction tube; an oxygen-containing gas supply system including a second nozzle disposed in the area which horizontally surrounds the substrate arrangement area, and configured to supply an oxygen-containing gas from a plurality of locations of the area into the reaction tube; a pressure controller configured to control a pressure inside the reaction tube to be lower than an atmospheric pressure; and a controller configured to control the heater, the hydrogen-containing gas supply system, the oxygen-containing gas supply system and the pressure controller such that the hydrogen-containing gas and the oxygen-containing gas are supplied simultaneously into the reaction tube accommodating the plurality of substrates and being under a heated atmosphere having a pressure lower than an atmospheric pressure through the first nozzle and the second nozzle, respectively, so that the hydrogen-containing gas and the oxygen-containing gas react with each other in the area which horizontally surrounds the substrate arrangement area to form a reactive species in the reaction tube, thereby thermally oxidizing each of the plurality of substrates by the reactive species, wherein the first nozzle is provided with a plurality of first gas ejection holes, and the second nozzle is provided with as many second gas ejection holes as at least the plurality of substrates such that at least each of the second gas ejection holes corresponds to each of the plurality of substrates is disclosed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式