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1. 发明授权

US3657075A Method of fabricating memory matrix planes using ferromagnetic thin film 失效
标题翻译：使用FERROMAGNETIC THIN FILM制作记忆矩阵的方法
公开(公告)号：US3657075A
公开(公告)日：1972-04-18
申请号：US3657075D
申请日：1968-09-18
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： OSHIMA SHINTARO , KOBAYASHI TOSHIHIKO , KAMIBAYASHI TETSUSABURO
IPC分类号： H01F10/06 , C23B5/48 , C23B5/46
CPC分类号： H01F10/06
摘要： A method of fabricating a memory matrix plane using ferromagnetic thin films, in which a composite film comprising a ferromagnetic thin film, a copper layer, and a chromium layer, is deposited on a glass substrate and is photoetched so as to obtain spaced parallel lines. Ferromagnetic layers are electroplated on the separate lines to coat the copper layer, and the chromium layer together with the ferromagnetic thin film at each of the separate lines, thereby obtaining row lines. Column lines are deposited, through an insulation layer, on the row lines so as to be orthogonally arranged to the row lines by evaporative deposition or adhesive deposition.
摘要翻译：使用铁磁薄膜制造存储矩阵平面的方法，其中将包含铁磁性薄膜，铜层和铬层的复合薄膜沉积在玻璃基板上，并进行光刻，以获得间隔开的平行线。将铁磁层电镀在不同的线上以将铜层和铬层与铁磁薄膜一起涂覆在每条分离线上，从而获得行线。柱线通过绝缘层沉积在行线上，以便通过蒸发沉积或粘合剂沉积与行线正交地布置。

2. 发明授权

US3666635A Method for fabricating a memory strip array 失效
标题翻译：用于制作记忆条纹阵列的方法
公开(公告)号：US3666635A
公开(公告)日：1972-05-30
申请号：US3666635D
申请日：1970-04-13
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： OSHIMA SHINTARO , KOBAYASHI TOSHIHIKO , KAMIBAYASHI TETSUSABURO , OKADA AKIRA , KOMAZAWA YOSHIHISA , KOMURO KEIGO
IPC分类号： C25D5/10 , G11C11/14 , G11C11/15 , H01F41/14 , H01F41/24 , H01F41/26 , H01L27/22 , C23B5/48 , C23F17/00
CPC分类号： H01L27/222 , C25D5/10 , G11C11/14 , G11C11/15 , H01F41/14 , H01F41/24 , H01F41/26 , Y10T29/49069
摘要： A METHOD FOR FABRICATING A MEMORY STRIP ARRAY, PROVIDED WITH A NUMBER OF PARALLEL MEMORY STRIPS, ON A SMOOTH SURFACE OF AN INSULATIVE SUBSTRATUM, WHICH A FIRST FERROMAGNETIC THIN FILM AND A CONDUCTIVE THIN FILM ARE SUCCESSIVELY DEPOSITED IN A SUPERPOSED RELATIONSHIP ON THE SMOOTH SURFACE SO AS TO OBTAIN A COMPOSITE LAYER; THE COMPOSITE LAYER IS THEN ETCHED IN A CHEMICAL PHOTO-ETCHING PROCESS AND AN ELECTROLYTIC-ETCHING PROCESS TO PRODUCE PARALLEL STRIPS OF THE COMPOSITE LAYER, THE RESPECTIVE ENDS OF WHICH ARE JOINTED RESPECTIVELY TOGETHER TO END LINES OF THE COMPOSITE LAYER; A SECOND FERROMAGNETIC THIN FILM IS ELECTROPLATEDBY THE USE OF THE END LINES AS AN ELECTRODE, ON EACH OF THE PARALLEL STRIPS SO AS TO PRODUCE THE PARALLEL MEMORY STRIPS EACH HAVING A CLOSED MAGNETIC CIRCUIT AROUND A CONDUCTIVE THINFILM-STRIP BY THE FIRST FERROMAGNETIC THINFILM AND THE SECOND FERROMAGNETIC THIN FILM; AND THE PARALLEL MEMORY STRIPS ARE SEPARATED AT NECESSARY PARTS OF SAID END LINES SO AS TO OBTAIN PARALLEL MEMORY STRIPS SEPARATED IN A DESIRED PATTERN.

3. 发明授权

US3587072A Sequential-access memory of high density using ferromagnetic thin films 失效
标题翻译：使用FERROMAGNETIC薄膜的高密度的顺序存取存储器
公开(公告)号：US3587072A
公开(公告)日：1971-06-22
申请号：US3587072D
申请日：1968-12-23
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： OSHIMA SHINTARO , KOBAYASHI TOSHIHIKO , KAMIBAYASHI TETSUSABURO
IPC分类号： G11B5/02 , G11B5/70 , G01D15/34 , G11B5/82
CPC分类号： G11B5/70 , G11B5/02
摘要： A sequential-access memory of the magnetic disc, drum or tape type by using at least one magnetic head scanning successive memory zones of a storage medium. The storage medium comprises at least one set of composite elongated conductive layers coated respectively with uniform ferromagnetic thin films and deposited side-by-side on the surface of a substratum made as a disc, drum or a tape. The easy magnetization axis of the ferromagnetic thin film is established substantially along planes perpendicular to the longitudinal direction of the elongated conductive layer, the uniform ferromagnetic thin films form a closed magnetic circuit around each of the composite elongated conductive layers. Information signals are stored in the storage medium by applying these information signals to the respective elongated conductive layers in applying a DC magnetic field to the storage medium by the magnetic head along the hard magnetization direction of the ferromagnetic thin films. The stored information signals are readout from the elongated conductive layers by applying a magnetic field to the storage medium with the magnetic head along the hard magnetization direction of the ferromagnetic thin films.

4. 发明授权

US3441494A Apparatus to deposit a ferromagnetic film on a conductive wire 失效
标题翻译：在导电线上沉积氟化膜的装置
公开(公告)号：US3441494A
公开(公告)日：1969-04-29
申请号：US3441494D
申请日：1964-05-21
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： OSHIMA SHINTARO , FUTAMI KAKUO , FUKUI TAKASUKE , KAMIBAYASHI TETSUSABURO , KOMAZAWA YOSHIHISA
IPC分类号： C25D7/06 , C25D21/12 , H01F10/06 , C23B5/68 , C23B5/50 , C23B5/58
CPC分类号： C25D7/0607 , C25D21/12 , H01F10/06

5. 发明授权

US3510851A Readout system for numerical information 失效
标题翻译：数字信息读出系统
公开(公告)号：US3510851A
公开(公告)日：1970-05-05
申请号：US3510851D
申请日：1968-03-14
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： NAKAGOME YUKIO , TERAMURA HIROICHI , KAMIBAYASHI TETSUSABURO , HATTORI NAOHIKO , ANDO SUMITOSHI
IPC分类号： G06F7/24
CPC分类号： G06F7/24

6. 发明授权

US3428955A Woven wire memory matrix 失效
标题翻译： WOVEN WIRE MEMORY MATRIX
公开(公告)号：US3428955A
公开(公告)日：1969-02-18
申请号：US3428955D
申请日：1963-09-17
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： OSHIMA SHINTARO , KAMIBAYASHI TETSUSABURO
IPC分类号： A45F5/00 , G11C5/02 , G11C5/06 , G11C7/02 , G11C11/04 , G11C11/14 , G11C11/10
CPC分类号： G11C11/04 , G11C5/02 , G11C5/06 , G11C7/02 , G11C11/14 , Y10T29/49069

7. 发明授权

US3602908A Wire memory matrix 失效
标题翻译：线内存矩阵
公开(公告)号：US3602908A
公开(公告)日：1971-08-31
申请号：US3602908D
申请日：1969-07-22
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： OSHIMA SHINTARO , KAMIBAYASHI TETSUSABURO
IPC分类号： G11C7/02 , G11C11/04 , G11C11/14 , G11C5/04
CPC分类号： G11C7/02 , G11C11/04
摘要： Magnetic matrix memory apparatus comprises a set of juxtaposed row conductive wires and a set of juxtaposed column conductive wires arranged orthogonally and adjacent to but insulated from the row conductive wires. Each of the row conductive wires is composed of a conductive spring wire having directly and uniformly deposited thereon a ferromagnetic thin film having substantially rectangular hysteresis characteristics and an inherent anisotropy. At least one of the sets of conductive wires is bonded to a sheet of insulation substratum. The ferromagnetic thin film of each row conductive wire forms closed magnetic circuits with respect to flux caused by current passed through the wire. Means is provided for applying an information signal to at least one wire of one of the sets of wires and for applying an exciting signal to at least one of the other set of wires. The inherent anisotropy of the thin film is established in a plane substantially orthogonal to the axis of the conductor to be employed for applying the information signal whereby a bit of information is stored in the ferromagnetic thin film deposited around at least one selected intersection between the two sets of wires in the state of direction of the residual magnetism of the magnetic thin film when selection is made by energizing with the information signal and the exciting signal at least one selected row conductive wire and at least one selected row conductive wire and at least one selected column conductive wire. A bit of information thus stored is read out from at least one wire employed for applying the information signal as an output signal having substantially the same amplitude and either of opposite polarities determined by the direction of the residual magnetism. of the residual magnetism of the magnetic thin film when selection is made by energizing with the information signal and the exciting signal at least one selected row conductive wire and at least one selected column conductive wire. A bit of information thus stored is read out from at least one wire employed for applying the information signal as an output signal having substantially the same amplitude and either of opposite polarities determined by the direction of the residual magnetism.

8. 发明授权

US3440436A Parametron using hollow tubular ferromagnetic thin film cores 失效
标题翻译：参考使用中空管毛细管薄膜
公开(公告)号：US3440436A
公开(公告)日：1969-04-22
申请号：US3440436D
申请日：1966-04-12
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： OSHIMA SHINTARO , KAMIBAYASHI TETSUSABURO , AMANO KITSUTARO
IPC分类号： H03K3/47
CPC分类号： H03K3/47

9. 发明授权

US3432681A Oscillation circuits controlled with ferromagnetic thin films 失效
标题翻译：振荡电路控制与薄膜薄膜
公开(公告)号：US3432681A
公开(公告)日：1969-03-11
申请号：US3432681D
申请日：1964-03-09
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： OSHIMA SHINTARO , KAMIBAYASHI TETSUSABURO
IPC分类号： H03K19/162 , H03B15/00
CPC分类号： H03K19/162

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