专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050032301A1 Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components 有权
标题翻译：低硅氢层，用于抑制具有铁电元件的半导体器件中的氢相关退化
公开(公告)号：US20050032301A1
公开(公告)日：2005-02-10
申请号：US10635994
申请日：2003-08-07
申请人： K. Udayakumar , Maritin Albrecht , Theodore Moise , Scott Summerfelt , Sarah Hartwig
发明人： K. Udayakumar , Maritin Albrecht , Theodore Moise , Scott Summerfelt , Sarah Hartwig
IPC分类号： H01L21/02 , H01L21/318 , H01L21/768 , H01L21/8246 , H01L27/115 , H01L21/8242 , H01L21/31 , H01L21/00 , H01L21/469
CPC分类号： H01L21/76829 , H01L21/3185 , H01L21/76828 , H01L21/76832 , H01L21/76834 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： Semiconductor devices and fabrication methods are disclosed, in which one or more low silicon-hydrogen SiN barriers are provided to inhibit hydrogen diffusion into ferroelectric capacitors and into transistor gate dielectric interface areas. The barriers may be used as etch stop layers in various levels of the semiconductor device structure above and/or below the level at which the ferroelectric capacitors are formed so as to reduce the hydrogen related degradation of the switched polarization properties of the ferroelectric capacitors and to reduce negative bias temperature instability in the device transistors.
摘要翻译：公开了半导体器件和制造方法，其中提供一个或多个低硅氢SiN栅极以阻止氢扩散到铁电电容器中并进入晶体管栅极电介质界面区域。可以将阻挡层用作在形成强电介质电容器的电平以上和/或以下的半导体器件结构的各种级别的蚀刻停止层，以便降低铁电电容器的开关极化特性的氢相关劣化，并且降低器件晶体管的负偏压温度不稳定性。

2. 发明授权

US07055212B2 Clean gas injector system for reactor chamber 有权
标题翻译：用于反应室的清洁气体喷射器系统
公开(公告)号：US07055212B2
公开(公告)日：2006-06-06
申请号：US10278791
申请日：2002-10-24
申请人： Ignacio Blanco-Rivera , Nathan J. Kruse , Sarah Hartwig
发明人： Ignacio Blanco-Rivera , Nathan J. Kruse , Sarah Hartwig
IPC分类号： A47L5/38
CPC分类号： H01L21/67017 , C23C16/4405 , C23C16/45578 , H01L21/67028 , Y10S156/916
摘要： An improvement to a Novellus HDP SPEED reactor chamber is described. An evacuation port of the Novellus SPEED Chamber is at one location in the chamber to remove injected cleaning gas from the chamber and there is a single input for cleaning gas connection into the chamber. In accordance an improvement a plurality of clean gas injectors is positioned on an adapter in the chamber and connected to the single input gas connection for distributing the cleaning gas in the chamber with the injectors spaced away from the evacuation port. The adapter is a U-shaped adapter and is positioned in the chamber with the adapter connected at the base to the single input gas connection. The adapter has two semicircular branch legs extending in opposite directions about the chamber to free ends that are connected to gas injectors. The free ends with the injectors are located in the chamber almost on the opposite end of the chamber from the evacuation port. Each of the two branch legs includes a second injector midway along the branch legs between the free ends and point of the branch to provide four injectors to evenly distribute the clean gas in the chamber.
摘要翻译：描述了对Novellus HDP SPEED反应器室的改进。 Novellus SPEED室的疏散口位于腔室的一个位置，以从腔室中除去注入的清洁气体，并且存在用于清洁气体连接到腔室中的单个输入口。根据改进，多个清洁气体喷射器位于腔室中的适配器上并且连接到单个输入气体连接部，用于将清洁气体分配在腔室中，其中喷射器与排气口间隔开。适配器是U形适配器，并且位于腔室中，适配器在基座处连接到单个输入气体连接。适配器具有两个半圆形支腿，该支腿在相对于室的相反方向上延伸以连接到气体喷射器的自由端。喷射器的自由端位于腔室中几乎位于与排气口相对的腔室的相对端。两个分支腿中的每一个在沿自由端和分支点之间的分支腿的中间部分包括第二注射器，以提供四个喷射器以将清洁气体均匀分布在腔室中。

3. 发明授权

US06790777B2 Method for reducing contamination, copper reduction, and depositing a dielectric layer on a semiconductor device 有权
公开(公告)号：US06790777B2
公开(公告)日：2004-09-14
申请号：US10288717
申请日：2002-11-06
申请人： Glenn J. Tessmer , Ju-Ai Ruan , Mercer Lusk Brugler , Sarah Hartwig
发明人： Glenn J. Tessmer , Ju-Ai Ruan , Mercer Lusk Brugler , Sarah Hartwig
IPC分类号： H01L2144
CPC分类号： H01L21/76834 , Y10S438/906 , Y10S438/913 , Y10S438/974
摘要： The present invention relates to a method for improving an interface of a semiconductor device. The method comprises providing a first and second substrate having an oxidized region, and establishing a first loading position in a first process chamber. The first and second substrates are consecutively inserted into the first process chamber and generally simultaneously processed, wherein the oxidized region is reduced by exposure to a first plasma. The first and second substrates are then consecutively removed and the first substrate is inserted into a second process chamber and subsequently processed. The second substrate is then inserted into the second process chamber and the first and second substrates are simultaneously processed. The first substrate is the removed, and the second substrate is processed again. According to one exemplary aspect, the first and second substrates are exposed to a first temperature in the first process chamber for approximately half the time the first and second substrates are exposed to a higher second temperature in the second process chamber while maintaining throughput of substrates.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式