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1. 发明申请

US20050067938A1 Carbon nano-tube field emission display having strip shaped gate 失效
标题翻译：具有带状门的碳纳米管场发射显示器
公开(公告)号：US20050067938A1
公开(公告)日：2005-03-31
申请号：US10724741
申请日：2003-12-02
申请人： Jyh-Rong Sheu , Chun-Tao Lee , Shin-Chiuan Jiang , Yu-Yang Chang , Cheng-Chung Lee
发明人： Jyh-Rong Sheu , Chun-Tao Lee , Shin-Chiuan Jiang , Yu-Yang Chang , Cheng-Chung Lee
IPC分类号： H01J1/304 , H01J1/02 , H01J3/02 , H01J29/48 , H01J31/12
CPC分类号： H01J1/304 , B82Y10/00 , H01J3/021 , H01J29/481 , H01J31/127 , H01J2201/30469 , Y10S977/952
摘要： A carbon nano-tube field emission display has a plurality of strip shaped gate, wherein the strip shaped gate of the triode structure is now in place of the conventional hole shaped gate, moreover, pluralities of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which is controlled under the strip shaped gate, and the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.
摘要翻译：碳纳米管场发射显示器具有多个条状栅极，其中三极管结构的带状栅极现在代替常规的孔形栅极，此外，多个阴极电子由来自一侧的门。因此，当碳纳米管电子发射源发射控制在带状栅极下方的电子，并且电子束的扩散方向被限制在相同的方向。因此，控制图像像素并利用三极管结构场发射显示器的特殊优点，显着提高了图像的均匀性和发光效率。

2. 发明授权

US07009331B2 Carbon nano-tube field emission display having strip shaped gate 失效
标题翻译：具有带状门的碳纳米管场发射显示器
公开(公告)号：US07009331B2
公开(公告)日：2006-03-07
申请号：US10724741
申请日：2003-12-02
申请人： Jyh-Rong Sheu , Chun-Tao Lee , Shin-Chiuan Jiang , Yu-Yang Chang , Cheng-Chung Lee
发明人： Jyh-Rong Sheu , Chun-Tao Lee , Shin-Chiuan Jiang , Yu-Yang Chang , Cheng-Chung Lee
IPC分类号： H01J1/02 , H01J19/24
CPC分类号： H01J1/304 , B82Y10/00 , H01J3/021 , H01J29/481 , H01J31/127 , H01J2201/30469 , Y10S977/952
摘要： A carbon nano-tube field emission display has a plurality of strip shaped gates, wherein the strip shaped gate of the triode structure is in place of the conventional hole shaped gate, and morecover, a plurality of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which are controlled under the strip shaped gate, the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of the triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.
摘要翻译：碳纳米管场致发射显示器具有多个条形门，其中三极管结构的带状栅极代替常规的孔形栅极，并且更多的覆盖，多个阴极电子被电力从门的一边。因此，当碳纳米管电子发射源发射被控制在带状栅极下方的电子时，电子束的扩散方向被限制在相同的方向。因此，控制图像像素并且利用三极管结构场发射显示器的特定优点显着地提高了图像均匀性和发光效率。

3. 发明授权

US07161289B2 Triode structure of field emission display and fabrication method thereof 失效
公开(公告)号：US07161289B2
公开(公告)日：2007-01-09
申请号：US10436796
申请日：2003-05-13
申请人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
发明人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
IPC分类号： H01J63/04
CPC分类号： H01J3/022 , H01J1/72 , H01J9/025
摘要： A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.

4. 发明授权

US06741039B2 FED driving method 失效
标题翻译： FED驾驶方式
公开(公告)号：US06741039B2
公开(公告)日：2004-05-25
申请号：US10145723
申请日：2002-05-16
申请人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang
发明人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang
IPC分类号： G09G310
CPC分类号： G09G3/22 , H01J31/127 , H01J2203/0292 , H01J2329/4695
摘要： An improved FED driving method, which uses a voltage control different from the prior FED, to turn an electron beam on/off and increase the resolution. The improved FED driving method is characterized in increasing a positive voltage applied to the FED's anode, grounding the FED's emitter and applying a negative voltage to the FED's gate. When driving the FED, the anode can pull electron beam out of the cathode with high accelerate voltage and the applied negative voltage on the gate can turn the electron beam on/off. As such, this allows a higher resolution because the electron beam is not influenced by the gate's lateral attraction and high lighting efficiency with high anode accelerate voltage.
摘要翻译：使用与先前的FED不同的电压控制的改进的FED驱动方法来打开/关闭电子束并提高分辨率。改进的FED驱动方法的特征在于增加施加到FED阳极的正电压，将FED的发射极接地并向FED的门施加负电压。当驱动FED时，阳极可以以高加速电压将电子束拉出阴极，并且栅极上施加的负电压可以打开/关闭电子束。因此，这允许更高的分辨率，因为电子束不受栅极的横向吸引和高阳极加速电压的高照明效率的影响。

5. 发明授权

US07662428B2 Method for carbon nanotube emitter surface treatment 失效
标题翻译：碳纳米管发射体表面处理方法
公开(公告)号：US07662428B2
公开(公告)日：2010-02-16
申请号：US10653990
申请日：2003-09-04
申请人： Jyh-Rong Sheu , Chun-Tao Lee , Cheng-Chung Lee , Jia-Chong Ho , Yu-Yang Chang
发明人： Jyh-Rong Sheu , Chun-Tao Lee , Cheng-Chung Lee , Jia-Chong Ho , Yu-Yang Chang
IPC分类号： B05D5/12
CPC分类号： B82Y30/00 , B82Y10/00 , H01J1/304 , H01J9/025 , H01J2201/30469
摘要： A method for increasing the number of carbon nanotubes exposed on the triode structure device of a field emission display uses the technology of casting surface treatment. For advancing the current density and magnitude of CNT emitters, the method of casting surface treatment on the CNT emitters includes the steps of coating an adhesive material on the surface of the device; heating the adhesive material for adhibitting the surface; and lifting the adhesive material off the surface.
摘要翻译：用于增加在场致发射显示器的三极管结构器件上暴露的碳纳米管的数量的方法使用铸造表面处理技术。为了提高CNT发射体的电流密度和幅度，在CNT发射体上进行表面处理的方法包括在器件表面上涂覆粘合剂材料的步骤; 加热用于粘合表面的粘合剂材料; 并将粘合剂材料从表面上提起。

6. 发明授权

US07156715B2 Triode structure of field emission display and fabrication method thereof 失效
标题翻译：场发射显示的三极结构及其制造方法
公开(公告)号：US07156715B2
公开(公告)日：2007-01-02
申请号：US11109173
申请日：2005-04-19
申请人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
发明人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
IPC分类号： H01J9/12
CPC分类号： H01J3/022 , H01J1/72 , H01J9/025
摘要： A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
摘要翻译：场致发射显示器的三极管结构及其制造方法。布置在矩阵中的多个阴极层形成在电介质层的上方。排列成矩阵状的多个发光层分别形成在阴极层的上方。在电介质层上形成多个纵向延伸的栅极线，其中每个栅极层设置在两个相邻的阴极层之间。

7. 发明申请

US20050197032A1 Triode structure of field emission display and fabrication method thereof 失效
标题翻译：场发射显示的三极结构及其制造方法
公开(公告)号：US20050197032A1
公开(公告)日：2005-09-08
申请号：US11109173
申请日：2005-04-19
申请人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
发明人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
IPC分类号： H01J1/72 , H01J3/02 , H01J9/02 , H01J29/04 , H01J31/12 , H01J9/00 , H01J9/24
CPC分类号： H01J3/022 , H01J1/72 , H01J9/025
摘要： A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
摘要翻译：场致发射显示器的三极管结构及其制造方法。布置在矩阵中的多个阴极层形成在电介质层的上方。排列成矩阵状的多个发光层分别形成在阴极层的上方。在电介质层上形成多个纵向延伸的栅极线，其中每个栅极层设置在两个相邻的阴极层之间。

8. 发明申请

US20050253501A1 Triode CNT-FED structure gate runner and cathode manufactured method 失效
标题翻译：三极管CNT-FED结构闸流道和阴极制造方法
公开(公告)号：US20050253501A1
公开(公告)日：2005-11-17
申请号：US10863279
申请日：2004-06-09
申请人： Ching-Hsun Chao , Jane-Hway Liao , Jyh-Rong Sheu , Yu-Yang Chang , Cheng-Chung Lee
发明人： Ching-Hsun Chao , Jane-Hway Liao , Jyh-Rong Sheu , Yu-Yang Chang , Cheng-Chung Lee
IPC分类号： B82B1/00 , C01B31/02 , H01J1/304 , H01J1/62 , H01J9/02 , H01J63/04
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译：本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。多个阴极层和多个栅极延伸层是共面的，其通过印记平版印刷在基板上形成，以及通过印刷光刻制造的多个电介质开口。此外，通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。

9. 发明授权

US06436221B1 Method of improving field emission efficiency for fabricating carbon nanotube field emitters 失效
标题翻译：提高制造碳纳米管场致发射体的场致发射效率的方法
公开(公告)号：US06436221B1
公开(公告)日：2002-08-20
申请号：US09779295
申请日：2001-02-07
申请人： Yu-Yang Chang , Jyh-Rong Sheu , Cheng-Chung Lee
发明人： Yu-Yang Chang , Jyh-Rong Sheu , Cheng-Chung Lee
IPC分类号： B32B3100
CPC分类号： B82Y10/00 , C03C17/007 , C03C2217/445 , C03C2217/475 , C03C2217/479 , H01J1/304 , H01J9/025 , H01J2201/30469 , Y10S977/742 , Y10S977/753 , Y10S977/843 , Y10S977/845
摘要： A method of CNT field emission current density improvement performed by a taping process is disclosed. The method comprises following steps. First of all, a conductive pattern coated on a substrate by screen-printing a conductive slurry containing silver through a patterned screen is carried out. Thereafter, a CNT layer is attached thereon by screen-printing a CNT paste through a mesh pattern screen to form CNT image pixel array layer. The CNT paste consists of organic bonding agent, resin, silver powder, and carbon nano-tubes. After that the substrate is soft baked by an oven using a temperature of about 50-200° C. to remove volatile organic solvent. A higher temperature sintering process, for example 350-550° C. is then carried out to solidify the CNT on and electric coupled with the conductive pattern. Finally, an adhesive film is closely attached on the cathode substrate and then remove the adhesive film away so as to remove those badly bonding CNT portions and to vertically pull up a portion of CNT which originally laid down on the surface of CNT layer after sintering. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.
摘要翻译：公开了一种通过胶带加工进行CNT场发射电流密度改进的方法。该方法包括以下步骤。首先，通过丝网印刷通过图案化屏幕的含银的导电浆料，涂覆在基材上的导电图案。此后，通过网状图案丝网印刷CNT浆料将CNT层附着在其上，形成CNT图像像素阵列层。 CNT浆料由有机粘合剂，树脂，银粉和碳纳米管组成。之后，使用约50-200℃的温度通过烘箱软化基底。去除挥发性有机溶剂。较高温度的烧结工艺，例如350-550℃。然后进行CNT的固化并与导电图形电耦合。最后，将粘合膜紧贴在阴极基板上，然后将粘合膜去除，以便去除这些不良接合的CNT部分，并且在烧结之后垂直拉起原来放置在CNT层表面上的一部分CNT。因此，发射源的电流密度，亮度和均匀性显着提高。

10. 发明申请

US20060258252A1 Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效
标题翻译：三极管CNT-FED的共面栅极阴极的结构及其制造方法
公开(公告)号：US20060258252A1
公开(公告)日：2006-11-16
申请号：US11490179
申请日：2006-07-21
申请人： Ching-Hsun Chao , Jane-Hway Liao , Jyh-Rong Sheu , Yu-Yang Chang , Cheng-Chung Lee
发明人： Ching-Hsun Chao , Jane-Hway Liao , Jyh-Rong Sheu , Yu-Yang Chang , Cheng-Chung Lee
IPC分类号： B05D3/00 , H01J9/24
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译：本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。多个阴极层和多个栅极延伸层是共面的，其通过印记平版印刷在基板上形成，以及通过印刷光刻制造的多个电介质开口。此外，通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。

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