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    • 4. 发明授权
    • Electron impact ion source
    • 电子冲击离子源
    • US06717155B1
    • 2004-04-06
    • US10110261
    • 2002-06-05
    • Guenter ZschornackVladimir Petrovich OvsyannikovFrank GrossmannOleg Konstantinovich Koulthachev
    • Guenter ZschornackVladimir Petrovich OvsyannikovFrank GrossmannOleg Konstantinovich Koulthachev
    • G01K108
    • H01J27/18
    • The invention provides an electron impact ion source for the generation of multiply- or super-highly-chared ions including an electron gun with cathode and anode for the creation and acceleration of electrons, a device for the axial-symmetric focussing of the electron beam, a device for introducing ionisable substances into an ion trap, which may be opened and closed, in the region of the axial-symmetric focussed electron beam, a device for destroying the electrons after they have passed the ion trap, and a device for creating a vacuum around the axial-symmetrically focussed electron beam and the ion trap within said beam. The device for the axial-symmetric focussing of the electron beam comprises at least two ring structures radially magnetized in opposing directions and each of these ring structures enclosed the electron beam. The two ring structures radially magnetized in opposing directions are connected by magnetic conductors to form a unified magnet system, whereby the closing magnetic field passes the ion residence zone in the ion trap. The cathode has a very high emissivity of ≧25 A/cm2 with a small cathode diameter. A vacuum of from 10−7 to 10−11 Torr in the ion residence zone can be set while operating the electron impact ion source.
    • 本发明提供了用于产生多次或超高度冷却离子的电子冲击离子源,包括具有用于产生和加速电子的阴极和阳极的电子枪,用于电子束的轴对称聚焦的装置, 用于将可离子化物质引入可以在轴对称聚焦电子束的区域中开启和关闭的离子阱的装置,用于在它们通过离子阱之后破坏电子的装置,以及用于产生 围绕轴对称聚焦电子束的真空和所述光束内的离子阱。 用于电子束的轴对称聚焦的装置包括沿相反方向径向磁化的至少两个环结构,并且这些环结构中的每一个都包围电子束。 在相反方向上径向磁化的两个环形结构通过磁性导体连接形成一个统一的磁体系统,由此闭合磁场通过离子阱中的离子驻留区。 阴极具有非常高的发射率> = 25A / cm 2,阴极直径小。 在操作电子碰撞离子源的同时,可以在离子驻留区中设置10 -7至10 -7乇的真空度。