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1. 发明授权

US06716332B1 Plating method and apparatus 有权
标题翻译：电镀方法和装置
公开(公告)号：US06716332B1
公开(公告)日：2004-04-06
申请号：US09582919
申请日：2000-07-07
申请人： Junichiro Yoshioka , Nobutoshi Saito , Tsuyoshi Tokuoka
发明人： Junichiro Yoshioka , Nobutoshi Saito , Tsuyoshi Tokuoka
IPC分类号： C25D2100
CPC分类号： C23C18/1834 , C23C18/1605 , C25D5/003 , C25D17/001 , C25D21/00 , C25D21/04 , H05K3/187 , H05K3/422 , H05K3/423
摘要： The present invention provides a plating method and apparatus, which is capable of introducing plating solution into the fine channels and holes formed in a substrate without needing to add a surface active agent to the plating solution, and capable of forming a high-quality plating film having no defects or omissions. The plating method for performing electrolytic or electroless plating of an object using a plating solution comprises: conducting a plating operation after or while deaerating dissolved gas in the plating solution; and/or conducting a preprocessing operation using a preprocessing solution after or while deaerating dissolved gas in the preprocessing solution and subsequently conducting the plating operation.
摘要翻译：本发明提供一种电镀方法和装置，其能够将电镀液引入形成于基板中的细孔和孔，而无需向电镀液中添加表面活性剂，能够形成高品质的镀膜没有缺陷或遗漏。使用电镀液对物体进行电解或无电镀的电镀方法包括：在溶液中溶解气体脱气后进行电镀操作; 和/或在预处理溶液中的溶解气体脱气之后使用预处理溶液进行预处理操作，然后进行电镀操作。

2. 发明授权

US07402227B2 Plating apparatus and method 有权
标题翻译：电镀装置及方法
公开(公告)号：US07402227B2
公开(公告)日：2008-07-22
申请号：US10968183
申请日：2004-10-20
申请人： Junichiro Yoshioka , Nobutoshi Saito , Yoshitaka Mukaiyama , Tsuyoshi Tokuoka
发明人： Junichiro Yoshioka , Nobutoshi Saito , Yoshitaka Mukaiyama , Tsuyoshi Tokuoka
IPC分类号： C25D17/00 , B23H7/26
CPC分类号： C25D17/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/06 , C25D21/04 , C25D21/10 , C25D21/12
摘要： An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要翻译：一种装置在精细的沟槽中形成镀膜，并在诸如半导体晶片的衬底的表面形成的抗蚀剂的开口中形成用于互连的插塞，并且在半导体晶片的表面上形成凸块（突起电极）。该装置包括能够打开和关闭用于保持基板的基板保持器，使得基板的前表面在其背侧和边缘被气密密封的同时露出。电镀槽容纳浸渍有阳极的电镀液。在电镀槽中设置隔膜，并设置在由基板保持件保持的阳极和基板之间。电镀液循环系统将镀液循环到电镀槽的各个区域，由隔膜隔开。排气单元设置在至少一个电镀液循环系统中。

3. 发明授权

US07118664B2 Plating method and apparatus 有权
标题翻译：电镀方法和装置
公开(公告)号：US07118664B2
公开(公告)日：2006-10-10
申请号：US10779708
申请日：2004-02-18
申请人： Junichiro Yoshioka , Nobutoshi Saito , Tsuyoshi Tokuoka
发明人： Junichiro Yoshioka , Nobutoshi Saito , Tsuyoshi Tokuoka
IPC分类号： C25D21/00
CPC分类号： C23C18/1834 , C23C18/1605 , C25D5/003 , C25D17/001 , C25D21/00 , C25D21/04 , H05K3/187 , H05K3/422 , H05K3/423
摘要： The present invention provides a plating method and apparatus, which is capable of introducing plating solution into the fine channels and holes formed in a substrate without needing to add a surface active agent to the plating solution, and capable of forming a high-quality plating film having no defects or omissions. The plating method for performing electrolytic or electroless plating of an object using a plating solution comprises: conducting a plating operation after or while deaerating dissolved gas in the plating solution; and/or conducting a preprocessing operation using a preprocessing solution after or while deaerating dissolved gas in the preprocessing solution and subsequently conducting the plating operation.
摘要翻译：本发明提供一种电镀方法和装置，其能够将电镀液引入形成于基板中的细孔和孔，而无需向电镀液中添加表面活性剂，能够形成高品质的镀膜没有缺陷或遗漏。使用电镀液对物体进行电解或无电镀的电镀方法包括：在溶液中溶解气体脱气后进行电镀操作; 和/或在预处理溶液中的溶解气体脱气之后使用预处理溶液进行预处理操作，然后进行电镀操作。

4. 发明申请

US20080245669A1 PLATING APPARATUS AND METHOD 有权
标题翻译：电镀设备和方法
公开(公告)号：US20080245669A1
公开(公告)日：2008-10-09
申请号：US12142570
申请日：2008-06-19
申请人： Junichiro Yoshioka , Nobutoshi Saito , Yoshitaka Mukaiyama , Tsuyoshi Tokuoka
发明人： Junichiro Yoshioka , Nobutoshi Saito , Yoshitaka Mukaiyama , Tsuyoshi Tokuoka
IPC分类号： C25D5/00
CPC分类号： C25D17/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/06 , C25D21/04 , C25D21/10 , C25D21/12
摘要： An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要翻译：一种装置在精细的沟槽中形成镀膜，并在诸如半导体晶片的衬底的表面形成的抗蚀剂的开口中形成用于互连的插塞，并且在半导体晶片的表面上形成凸块（突起电极）。该装置包括能够打开和关闭用于保持基板的基板保持器，使得基板的前表面在其背侧和边缘被气密密封的同时露出。电镀槽容纳浸渍有阳极的电镀液。在电镀槽中设置隔膜，并设置在由基板保持件保持的阳极和基板之间。电镀液循环系统将镀液循环到电镀槽的各个区域，由隔膜隔开。排气单元设置在至少一个电镀液循环系统中。

5. 发明授权

US08012332B2 Plating apparatus and method 有权
标题翻译：电镀装置及方法
公开(公告)号：US08012332B2
公开(公告)日：2011-09-06
申请号：US12142570
申请日：2008-06-19
申请人： Junichiro Yoshioka , Nobutoshi Saito , Yoshitaka Mukaiyama , Tsuyoshi Tokuoka
发明人： Junichiro Yoshioka , Nobutoshi Saito , Yoshitaka Mukaiyama , Tsuyoshi Tokuoka
IPC分类号： C25D5/34
CPC分类号： C25D17/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/06 , C25D21/04 , C25D21/10 , C25D21/12
摘要： An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要翻译：一种装置在精细的沟槽中形成镀膜，并在诸如半导体晶片的衬底的表面形成的抗蚀剂的开口中形成用于互连的插塞，并且在半导体晶片的表面上形成凸块（突起电极）。该装置包括能够打开和关闭用于保持基板的基板保持器，使得基板的前表面在其背侧和边缘被气密密封的同时露出。电镀槽容纳浸渍有阳极的电镀液。在电镀槽中设置隔膜，并设置在由基板保持件保持的阳极和基板之间。电镀液循环系统将镀液循环到电镀槽的各个区域，由隔膜隔开。排气单元设置在至少一个电镀液循环系统中。

6. 发明申请

US20050082163A1 Plating apparatus and method 有权
标题翻译：电镀装置及方法
公开(公告)号：US20050082163A1
公开(公告)日：2005-04-21
申请号：US10968183
申请日：2004-10-20
申请人： Junichiro Yoshioka , Nobutoshi Saito , Yoshitaka Mukaiyama , Tsuyoshi Tokuoka
发明人： Junichiro Yoshioka , Nobutoshi Saito , Yoshitaka Mukaiyama , Tsuyoshi Tokuoka
IPC分类号： C25D17/00 , C25D7/12 , C25D21/04 , C25D21/10 , C25D21/12
CPC分类号： C25D17/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/06 , C25D21/04 , C25D21/10 , C25D21/12
摘要： An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要翻译：一种装置在精细的沟槽中形成镀膜，并在诸如半导体晶片的衬底的表面形成的抗蚀剂的开口中形成用于互连的插塞，并且在半导体晶片的表面上形成凸块（突起电极）。该装置包括能够打开和关闭用于保持基板的基板保持器，使得基板的前表面在其背侧和边缘被气密密封的同时露出。电镀槽容纳浸渍有阳极的电镀液。在电镀槽中设置隔膜，并设置在由基板保持件保持的阳极和基板之间。电镀液循环系统将镀液循环到电镀槽的各个区域，由隔膜隔开。排气单元设置在至少一个电镀液循环系统中。

7. 发明授权

US06569752B1 Semiconductor element and fabricating method thereof 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US06569752B1
公开(公告)日：2003-05-27
申请号：US09522820
申请日：2000-03-10
申请人： Soichi Homma , Masahiro Miyata , Hirokazu Ezawa , Junichiro Yoshioka , Hiroaki Inoue , Tsuyoshi Tokuoka
发明人： Soichi Homma , Masahiro Miyata , Hirokazu Ezawa , Junichiro Yoshioka , Hiroaki Inoue , Tsuyoshi Tokuoka
IPC分类号： H01L2144
CPC分类号： H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/02126 , H01L2224/0347 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05027 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05558 , H01L2224/05572 , H01L2224/0558 , H01L2224/05639 , H01L2224/1132 , H01L2224/1147 , H01L2224/11901 , H01L2224/11902 , H01L2224/13006 , H01L2224/13023 , H01L2224/13111 , H01L2224/16238 , H01L2224/16507 , H01L2924/00013 , H01L2924/0002 , H01L2924/01004 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10253 , H01L2924/207 , H01L2224/13099 , H01L2924/00014 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要： The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.
摘要翻译：本半导体元件包括半导体衬底，形成在其上的布线衬垫，形成在其上的阻挡金属层，形成在其上的金属间化合物Ag 3 Sn，以及由其上形成的低熔点金属组成的突出电极。此外，半导体元件的制造方法包括以下步骤：在半导体衬底上形成布线焊盘，在其上形成阻挡金属层，在其上形成含有Ag的金属层，在其上形成含有Sn的低熔点金属层并且熔化含有Sn的低熔点金属层以形成突出电极，同时在包含Ag的金属层和含有Sn的低熔点金属层之间的界面处形成金属间化合物Ag 3 Sn。因此，利用无铅焊料，可以获得高可靠性的半导体元件。

8. 发明授权

US06544585B1 Method and apparatus for plating a substrate 有权
标题翻译：电镀基板的方法和装置
公开(公告)号：US06544585B1
公开(公告)日：2003-04-08
申请号：US09145500
申请日：1998-09-02
申请人： Fumio Kuriyama , Akihisa Hongo , Hiroaki Inoue , Tsuyoshi Tokuoka
发明人： Fumio Kuriyama , Akihisa Hongo , Hiroaki Inoue , Tsuyoshi Tokuoka
IPC分类号： B05D512
CPC分类号： H01L21/6715 , H01L21/67144
摘要： A high quality metallic deposit can be produced inside the micro-cavities formed on a surface of a substrate by the present invention. The method involves immersing the substrate in a liquid held in a processing chamber, evacuating the processing chamber so as to remove residual bubbles from the micro-cavities and to degas the liquid within the micro-cavities, and subjecting the liquid to boiling in at least those regions adjacent to the substrate.
摘要翻译：通过本发明，可以在形成在基板的表面上的微孔内产生高质量的金属沉积物。该方法包括将基底浸入保持在处理室中的液体中，抽空处理室以从微孔中除去残余气泡并使微腔内的液体脱气，并至少使液体沸腾那些区域与衬底相邻。

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