专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4583122A Imaging display device 失效
标题翻译：成像显示装置
公开(公告)号：US4583122A
公开(公告)日：1986-04-15
申请号：US498134
申请日：1983-05-25
申请人： Junichi Ohwada , Hideaki Kawakami , Makoto Matsui , Eiichi Maruyama
发明人： Junichi Ohwada , Hideaki Kawakami , Makoto Matsui , Eiichi Maruyama
IPC分类号： G02F1/133 , G02F1/135 , G02F1/1368 , H01L27/14 , H01L27/146 , H04N5/30 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374
CPC分类号： G02F1/1354 , G02F1/1368
摘要： An imaging display device characterized by comprising a pair of transparent substrates which are arranged in opposition to each other with a predetermined interval therebetween, photoelectric elements which are disposed in a large number between the substrates and in adjacency to one of the substrates and which convert light signals from outside the one substrate into electric signals, and a large number of electrooptic elements which are disposed between the other substrate and the respective photoelectric elements and in a predetermined relationship of correspondence with the photoelectric elements and which generate light signals by utilizing parts of the electric signals of the corresponding photoelectric elements.
摘要翻译：一种成像显示装置，其特征在于包括一对透明基板，它们之间以预定的间隔彼此相对设置，所述光电元件大量设置在所述基板之间并且与所述基板中的一个相邻并且将所述光从一个衬底外部的信号转换为电信号，以及大量电光元件，其设置在另一个衬底和各个光电元件之间，并且以与光电元件对应的预定关系设置，并且通过利用相应光电元件的电信号。

2. 发明授权

US4351856A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4351856A
公开(公告)日：1982-09-28
申请号：US170185
申请日：1980-07-18
申请人： Makoto Matsui , Yasuhiro Shiraki , Yoshifumi Katayama , Toshihisa Tsukada , Eiichi Maruyama
发明人： Makoto Matsui , Yasuhiro Shiraki , Yoshifumi Katayama , Toshihisa Tsukada , Eiichi Maruyama
IPC分类号： G09G3/36 , H01L21/203 , H01L21/336 , H01L27/12 , H01L27/146 , H01L29/04 , H01L29/78 , H01L29/786 , B05D3/06 , B05D5/12 , B32B17/06
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/02631 , H01L21/02639 , H01L27/12 , H01L27/14643 , H01L27/14665 , H01L29/04 , H01L29/78675 , Y10S148/169 , Y10S438/909
摘要： A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a carrier mobility of at least 1 cm.sup.2 /V.multidot.sec, and wherein at least one active device is formed by employing the polycrystalline film as its material. A large-area or elongate active device can be provided. The polycrystalline film for such semiconductor device is formed by a method wherein the amorphous or polycrystalline substrate is mounted in a vacuum chamber and wherein the polycrystalline film whose principal constituent is silicon is evaporated on the substrate under the conditions that the pressure during the evaporation is below 1.times.10.sup.-8 Torr and that the partial pressure of oxygen during the evaporation is below 1.times.10.sup.-9 Torr.
摘要翻译：公开了一种半导体器件，其中主要成分为硅的多晶膜形成在非晶或多晶衬底上，所述多晶膜的载流子迁移率为至少1cm 2 / Vxsec，并且其中至少一个有源器件通过使用多晶膜作为其材料。可以提供大面积或细长的有源装置。用于这种半导体器件的多晶膜通过一种方法形成，其中非晶或多晶衬底安装在真空室中，其中主要成分为硅的多晶膜在蒸发过程中的压力低于条件下在衬底上蒸发 1×10 -8乇，蒸发时的氧分压低于1×10 -9乇。

3. 发明授权

US4227078A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4227078A
公开(公告)日：1980-10-07
申请号：US918273
申请日：1978-06-22
申请人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H04N1/028 , G02B6/42 , G06K9/20 , H01L27/144 , H01L27/146 , H01L31/02 , H01L31/0232 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.
摘要翻译：一种光传感器，其中将片状形式的一束光纤设置在预定的基板内，光纤束从基板的第一表面延伸到第二表面，光敏元件阵列与基板，使得至少一个透明绝缘层介于光电元件和光纤束之间，至少在基板的第一表面侧上的光纤束的端面和向基板的第二表面开放的光纤束用作信息读取面。

4. 发明授权

US4904989A Display device 失效
标题翻译：显示设备
公开(公告)号：US4904989A
公开(公告)日：1990-02-27
申请号：US115616
申请日：1987-10-30
申请人： Makoto Matsui , Jun-ichi Ohwada , Yasuhiro Shiraki , Eiichi Maruyama
发明人： Makoto Matsui , Jun-ichi Ohwada , Yasuhiro Shiraki , Eiichi Maruyama
IPC分类号： G02F1/133 , G02F1/1335 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L23/48
CPC分类号： G02F1/1368 , G02F1/133512 , G02F2202/104
摘要： In a display device having, at least, picture elements which are arrayed on a transparent insulating substrate, and transistor portions which are formed of a semiconductor layer formed on the transparent insulating substrate; a display device characterized in that, at least, interconnection parts of the transistor portions extend above the semiconductor layer formed on the transparent insulating substrate.The disconnection of the interconnection parts can be avoided.
摘要翻译：在至少具有排列在透明绝缘性基板上的像素的显示装置以及由形成于透明绝缘基板上的半导体层形成的晶体管部分的显示装置中，一种显示装置，其特征在于，至少晶体管部分的互连部分在形成在透明绝缘基板上的半导体层的上方延伸。可以避免互连部件断开。

5. 发明授权

US4307372A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4307372A
公开(公告)日：1981-12-22
申请号：US108783
申请日：1979-12-31
申请人： Makoto Matsui , Hideaki Yamamoto , Eiichi Maruyama
发明人： Makoto Matsui , Hideaki Yamamoto , Eiichi Maruyama
IPC分类号： H01L27/146 , H01L31/09 , H01L31/08
CPC分类号： H01L31/09 , H01L27/14665
摘要： In a thin-film photosensor comprising a transparent electrode deposited on one surface of a thin layer of photoconductor, and a counter electrode deposited on the other surface thereof, a photosensor for use in a photosensor array of a facsimile transmitter or the like characterized in that part of the transparent electrode other than a window for incidence of a light signal is covered with an opaque thin film.
摘要翻译：在包括沉积在光电导体的薄层的一个表面上的透明电极和沉积在其另一表面上的对电极的薄膜光电传感器中，用于传真发射器等的光电传感器阵列中的光电传感器，其特征在于，除了用于入射光信号的窗口以外的透明电极的一部分被不透明薄膜覆盖。

6. 发明授权

US4233506A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4233506A
公开(公告)日：1980-11-11
申请号：US903161
申请日：1978-05-05
申请人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： G02B6/42 , G02B27/00 , G02B27/02 , G06K9/20 , H01L27/144 , H04N1/028 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.
摘要翻译：一种光束传感器，其中一束光纤被布置在预定的衬底内，光纤束从衬底的第一表面延伸到第二表面并且被形成为平坦的，具有光敏部件的光敏元件阵列在基板的第一表面处的光纤的开口端面与基板一体地设置，并且在基板的第二表面处的光纤的端面用作信息读取表面。

7. 发明授权

US4405879A Photoelectric conversion device and method of producing the same 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US4405879A
公开(公告)日：1983-09-20
申请号：US246588
申请日：1981-03-23
申请人： Saburo Ataka , Yoshinori Imamura , Yasuo Tanaka , Hirokazu Matsubara , Eiichi Maruyama
发明人： Saburo Ataka , Yoshinori Imamura , Yasuo Tanaka , Hirokazu Matsubara , Eiichi Maruyama
IPC分类号： H01J9/233 , H01J29/45 , B05D1/36 , H01J31/38
CPC分类号： H01J29/456 , H01J9/233
摘要： There is disclosed a photoelectric conversion device comprising a transparent substrate; a transparent conductive film formed on said substrate; a photoconductive layer formed of hydrogenated amorphous silicon as an indispensable component and deposited on said transparent conductive film; and a chalcogen glass film formed on said photoconductive layer, wherein said chalcogen glass film includes at least a chalcogen glass layer formed in an atmosphere of inert gas kept at 1.5.times.10.sup.-2 to 1.5.times.10.sup.-1 Torr. As chalcogen glass is preferably used Sb.sub.2 S.sub.3, As.sub.2 S.sub.3, As.sub.2 Se.sub.3 or Sb.sub.2 Se.sub.3. The chalcogen glass film may be a composite film consisting of plural component layers. This invention is very useful to reduce dark current in an image pickup tube and to prevent image inversion in the image pickup tube.
摘要翻译：公开了一种包括透明基板的光电转换装置; 形成在所述基板上的透明导电膜; 由氢化非晶硅作为不可缺少的成分形成并沉积在所述透明导电膜上的光电导层; 以及形成在所述光电导层上的硫属玻璃膜，其中所述硫属玻璃膜至少包含在保持在1.5×10 -2至1.5×10 -1乇的惰性气体气氛中形成的至少一种硫族化合物玻璃层。作为硫属玻璃，优选使用Sb2S3，As2S3，As2Se3或Sb2Se3。硫属玻璃膜可以是由多个成分层构成的复合膜。本发明对于降低图像拾取管中的暗电流并且防止图像拾取管中的图像反转非常有用。

8. 发明授权

US4331506A Method of manufacturing target of image pickup tube 失效
标题翻译：摄像管目标的制造方法
公开(公告)号：US4331506A
公开(公告)日：1982-05-25
申请号：US212213
申请日：1980-12-02
申请人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
发明人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J9/233 , H01J31/46 , H01J31/26
CPC分类号： H01J31/46 , H01J9/233
摘要： A method of manufacturing a target of an image pickup tube comprising the steps of: forming a plurality of groups of transparent conductive signal electrodes on a transparent insulating base plate; forming a first layer on at least a portion constituting an image area of the image pickup tube, said first layer being substantially insoluble in etching liquid used for etching an insulating layer to constitute an intermediate layer insulator in a double layered interconnection structure; forming, after formation of said first layer, an insulating layer to constitute said intermediate-layer insulator; removing a predetermined portion of said insulating layer, removing said first layer together with said insulating layer located thereon; forming bus bars; and forming a photoconductive layer on said plurality of groups of the transparent conductive signal electrodes.This invention provides an excellent method for mass production.
摘要翻译：一种制造图像拾取管的目标的方法，包括以下步骤：在透明绝缘基板上形成多组透明导电信号电极; 在构成图像拾取管的图像区域的至少一部分上形成第一层，所述第一层基本上不溶于用于蚀刻绝缘层的蚀刻液，以构成双层互连结构中的中间层绝缘体; 在形成所述第一层之后形成构成所述中间层绝缘体的绝缘层; 去除所述绝缘层的预定部分，与位于其上的所述绝缘层一起去除所述第一层; 形成母线; 以及在所述多个透明导电信号电极组上形成光电导层。本发明提供了一种很好的批量生产方法。

9. 发明授权

US4556816A Photoelectric device 失效
标题翻译：光电器件
公开(公告)号：US4556816A
公开(公告)日：1985-12-03
申请号：US510910
申请日：1983-07-05
申请人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
发明人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H01J31/00 , H01J31/26
CPC分类号： H01L31/095 , H01J29/456 , H01J9/233
摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.
摘要翻译：公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

10. 发明授权

US4433202A Thin film solar cell 失效
标题翻译：薄膜太阳能电池
公开(公告)号：US4433202A
公开(公告)日：1984-02-21
申请号：US362115
申请日：1982-03-26
申请人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
发明人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
IPC分类号： H01L31/04 , H01L31/0368 , H01L31/0392 , H01L31/06
CPC分类号： H01L31/03682 , H01L31/03921 , Y02E10/546
摘要： A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element.The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.
摘要翻译：一种在基板上形成的薄膜太阳能电池，其至少包括第一和第二电极，其中至少一个能够通过光，插入在所述第一和第二电极之间的硅膜，以及形成在硅膜中的至少一个结用于在电池暴露于光时分离电子和正空穴，其中所述硅膜包括由多晶相和非晶相组成的混合相，并且包括至少约50体积％的纤维状晶粒，每个所述晶粒具有约1μm的最大底部直径和约50nm的最小高度，并且其晶界用一价元素封端。太阳能电池具有与单晶太阳能电池相当的高的光电转换效率，并且可以以低成本生产。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式