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1. 发明授权

US06911913B2 Piezo-resistive sensing of mirror position in an optical switch 有权
标题翻译：在光开关中的反射镜位置的压电感测
公开(公告)号：US06911913B2
公开(公告)日：2005-06-28
申请号：US10261086
申请日：2002-09-30
申请人： Jungsang Kim , Anatoli Olkhovets , Alex T. Tran
发明人： Jungsang Kim , Anatoli Olkhovets , Alex T. Tran
IPC分类号： G02B6/35 , G02B26/08 , G08B17/06
CPC分类号： G02B26/0841 , G02B6/3518 , G02B6/357 , G02B6/3578 , G02B6/359
摘要： An integrated piezo-resistive sensor for determining mirror position in an optical switch. One or more piezo-resistive layers may be formed in silicon springs supporting a movable mirror in the switch. Change in resistivity of those layers due to spring deformation during mirror motion is measured and related to the mirror deflection angle. Information about the angle may be used to provide feedback to the motion actuator, which then may be operated to orient the mirror more accurately. A sensor's sensitivity may be increased by appropriately orienting the springs with respect to the crystallographic axes of the silicon.
摘要翻译：一种用于确定光开关中镜面位置的集成压电传感器。一个或多个压电层可以形成在支撑开关中的可移动反射镜的硅弹簧中。测量由于反射镜运动期间的弹簧变形引起的那些层的电阻率的变化，并且与镜面偏转角有关。可以使用关于角度的信息来向运动致动器提供反馈，然后可以对运动致动器进行操作以更准确地定向镜子。可以通过相对于硅的结晶轴适当地定向弹簧来增加传感器的灵敏度。

2. 发明授权

US07158693B2 Molecular detection using an optical waveguide fixed to a cantilever 有权
标题翻译：使用固定在悬臂上的光波导的分子检测
公开(公告)号：US07158693B2
公开(公告)日：2007-01-02
申请号：US11240151
申请日：2005-09-29
申请人： Alex T. Tran , Dustin W. Carr
发明人： Alex T. Tran , Dustin W. Carr
IPC分类号： G02B6/00
CPC分类号： G01N33/54373 , G02B6/3502 , G02B6/3566
摘要： The invention relates to devices and methods for detecting a ligand in a liquid, based on deflection of one or more microscopic cantilevers. Each cantilever has an optical waveguide fixed thereto or integral therewith. Deflection of the cantilever is detected by assessing coupling of light between the optical waveguide on the cantilever and an optical waveguide fixed distally thereto.
摘要翻译：本发明涉及用于检测液体中配体的装置和方法，其基于一个或多个微观悬臂的偏转。每个悬臂具有固定到其上的或与其成一体的光波导。通过评估悬臂梁上的光波导与远端固定的光波导之间的光耦合来检测悬臂的偏转。

3. 发明授权

US06362512B1 Microelectromechanical structures defined from silicon on insulator wafers 有权
标题翻译：由绝缘体上硅晶片定义的微机电结构
公开(公告)号：US06362512B1
公开(公告)日：2002-03-26
申请号：US09468423
申请日：1999-12-21
申请人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
发明人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2982
CPC分类号： B81B3/0083 , B81C2201/0109 , B81C2201/019 , B81C2201/0191 , B81C2201/053 , G02B6/4214
摘要： A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.
摘要翻译：器件结构被限定在由来自处理晶片的绝缘体层（例如氧化物层）分离的单晶硅（SCS）层中。 SCS可以通过晶片接合连接到绝缘体，并且通过光刻图案和干蚀刻被选择性地蚀刻。可以在蚀刻的SCS上沉积牺牲氧化物层，在其上沉积多晶硅。沉积保护性氧化物层，并集成CMOS电路和传感器。释放了连接到CMOS电路的传感器的硅微结构。此外，可以通过牺牲氧化物层蚀刻孔，牺牲氧化物可以沉积在蚀刻的SCS上，多晶硅可以沉积在牺牲氧化物上，PSG可以沉积在多晶硅层上，然后可以对其进行图案化。

4. 发明授权

US07212693B2 Optical substance analyzer 有权
标题翻译：光学物质分析仪
公开(公告)号：US07212693B2
公开(公告)日：2007-05-01
申请号：US10743253
申请日：2003-12-22
申请人： Dustin W. Carr , Ho Bun Chan , Alex T. Tran
发明人： Dustin W. Carr , Ho Bun Chan , Alex T. Tran
IPC分类号： G02B6/00
CPC分类号： G01N21/774 , G01N21/45 , G01N21/7746 , G01N33/54366 , G01N33/569 , G01N2021/7709 , G01N2021/7779 , G01N2021/7793
摘要： A portable waveguide sensor having one or more gratings. In one embodiment, the sensor has a waveguide, wherein a plurality of grooves imprinted onto the waveguide form a Bragg grating. The surface of the grooves has a functional layer adapted to bind a substance of interest, e.g., a biological pathogen. When the pathogen binds to the functional layer, the binding shifts the spectral reflection band corresponding to the Bragg grating such that a probe light previously reflected by the grating now passes through the grating, thereby indicating the presence of the pathogen. In another embodiment, the sensor has a Mach-Zehnder interferometer (MZI), one arm of which has a resonator formed by two Bragg gratings. The surface of the resonator between the gratings has a functional layer whereas the Bragg gratings themselves do not have such a layer.
摘要翻译：具有一个或多个光栅的便携式波导传感器。在一个实施例中，传感器具有波导，其中印在波导上的多个凹槽形成布拉格光栅。凹槽的表面具有适于结合感兴趣物质的功能层，例如生物病原体。当病原体与功能层结合时，结合移动对应于布拉格光栅的光谱反射带，使得光栅以前反射的探针光线现在通过光栅，从而指示病原体的存在。在另一个实施例中，传感器具有马赫 - 曾德干涉仪（MZI），其一个臂具有由两个布拉格光栅形成的谐振器。光栅之间的谐振器的表面具有功能层，而布拉格光栅本身不具有这样的层。

5. 发明授权

US6054335A Fabrication of scanning III-V compound light emitters integrated with Si-based actuators 有权
标题翻译：与Si基致动器集成的扫描III-V复合发光体的制造
公开(公告)号：US6054335A
公开(公告)日：2000-04-25
申请号：US209866
申请日：1998-12-11
申请人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
发明人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
IPC分类号： B81B3/00 , B81B7/02 , H01L27/15 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/42 , H01L21/00
CPC分类号： H01S5/18308 , H01S5/02288 , H01L27/15 , H01S5/021 , H01S5/02252 , H01S5/4087 , H01S5/423 , H01S5/426
摘要： A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.
摘要翻译： III-V复合光发射器与Si基致动器集成。提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。基于Si的致动器的基于电或磁的致动器提供光发射器的线性或角度运动。

6. 发明授权

US06661070B2 Micromechanical and microoptomechanical structures with single crystal silicon exposure step 失效
公开(公告)号：US06661070B2
公开(公告)日：2003-12-09
申请号：US10193804
申请日：2002-07-11
申请人： Andrew J. Zosel , Joel A. Kubby , Peter M. Gulvin , Chuang-Chia Lin , Jingkuang Chen , Alex T. Tran
发明人： Andrew J. Zosel , Joel A. Kubby , Peter M. Gulvin , Chuang-Chia Lin , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2982
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.

7. 发明授权

US06379989B1 Process for manufacture of microoptomechanical structures 有权
标题翻译：微机电结构的制造工艺
公开(公告)号：US06379989B1
公开(公告)日：2002-04-30
申请号：US09468141
申请日：1999-12-21
申请人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
发明人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： G02B6/43 , G02B6/4214
摘要： A microoptomechanical structure produced by defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer, such as a SOI wafer, selectively etching the single crystal silicon layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer, depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures. Embodiments use an oxide as an insulator, and other embodiments provide for wafer bonding of the silicon layer to the insulator layer.
摘要翻译：通过在由诸如SOI晶片的处理晶片分离的绝缘体层的单晶硅层中限定微光学结构而产生的微机电结构，选择性地蚀刻单晶硅层，在蚀刻的单晶上沉积牺牲氧化物层硅层，沉积和蚀刻牺牲氧化物层上的多晶硅层，形成铰链元件，并释放形成的微光学结构。实施例使用氧化物作为绝缘体，并且其它实施例提供硅层与绝缘体层的晶片结合。

8. 发明授权

US06295130B1 Structure and method for a microelectromechanically tunable fabry-perot cavity spectrophotometer 有权
标题翻译：微电子机械可调谐fabry-perot腔分光光度计的结构和方法
公开(公告)号：US06295130B1
公开(公告)日：2001-09-25
申请号：US09469892
申请日：1999-12-22
申请人： Decai Sun , Joel A. Kubby , Alex T. Tran , Eric Peeters
发明人： Decai Sun , Joel A. Kubby , Alex T. Tran , Eric Peeters
IPC分类号： G01B902
CPC分类号： G01J3/26
摘要： A microelectromechanically tunable Fabry-Perot spectrophotometer is provided for color sensing. Optical fiber provides light input to a Fabry-Perot filter which is adjusted by a switched capacitor circuit. Spectral intensity is sensed by an integrated photodetector.
摘要翻译：提供微机电可调法布里 - 珀罗分光光度计，用于色彩检测。光纤向法布里 - 珀罗滤波器提供光输入，该滤波器由开关电容电路调节。光谱强度由集成光电检测器检测。

9. 发明授权

US06987898B2 Molecular detection using an optical waveguide fixed to a cantilever 有权
标题翻译：使用固定在悬臂上的光波导的分子检测
公开(公告)号：US06987898B2
公开(公告)日：2006-01-17
申请号：US10625384
申请日：2003-07-23
申请人： Alex T. Tran , Dustin W. Carr
发明人： Alex T. Tran , Dustin W. Carr
IPC分类号： G02B6/00
CPC分类号： G01N33/54373 , G02B6/3502 , G02B6/3566
摘要： The invention relates to devices and methods for detecting a ligand in a liquid, based on deflection of one or more microscopic cantilevers. Each cantilever has an optical waveguide fixed thereto or integral therewith. Deflection of the cantilever is detected by assessing coupling of light between the optical waveguide on the cantilever and an optical waveguide fixed distally thereto.
摘要翻译：本发明涉及用于检测液体中配体的装置和方法，其基于一个或多个微观悬臂的偏转。每个悬臂具有固定到其上的或与其成一体的光波导。通过评估悬臂梁上的光波导与远端固定的光波导之间的光耦合来检测悬臂的偏转。

10. 发明授权

US06479315B1 Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权
标题翻译：用单晶硅曝光步骤制造微机械和微机电结构的方法
公开(公告)号：US06479315B1
公开(公告)日：2002-11-12
申请号：US09724514
申请日：2000-11-27
申请人： Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran
发明人： Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilicon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
摘要翻译：本发明提供一种微机械或微机电结构。该结构通过包括在衬底层上限定由绝缘体层分离的单晶硅层上的结构的方法制造; 沉积和蚀刻单晶硅层上的多晶硅层，剩余的多晶硅形成结构的机械或光学元件; 暴露单晶硅层的选定区域; 并释放形成的结构。

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