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1. 发明申请

US20100133994A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US20100133994A1
公开(公告)日：2010-06-03
申请号：US12505880
申请日：2009-07-20
申请人： Jung-Bae SONG , Un-Cheol SUNG , Sung-Hun LEE , Beohm-Rock CHOI , Jung-Soo RHEE , Sang-Woo LEE , Ji-Hye CHOI , Jung-Yeon KIM
发明人： Jung-Bae SONG , Un-Cheol SUNG , Sung-Hun LEE , Beohm-Rock CHOI , Jung-Soo RHEE , Sang-Woo LEE , Ji-Hye CHOI , Jung-Yeon KIM
IPC分类号： H01J1/62
CPC分类号： H01L51/5265 , H01L27/3211 , H01L51/0092 , H01L51/5012 , H01L51/5215
摘要： An organic light emitting device and a manufacturing method thereof is provided. The organic light emitting device includes a first pixel that displays a first color, a second pixel that displays a second color, and a third pixel that displays a third color. The first pixel, the second pixel and the third pixel together form one pixel. Each of the first pixel, second pixel, and third pixel includes a pixel electrode having a transflective electrode, an organic emission layer on the pixel electrode that displays the first color, a common electrode on the third color organic emission layer, and a transparent supplementary member between the pixel electrode and the common electrode.
摘要翻译：提供了一种有机发光器件及其制造方法。有机发光器件包括显示第一颜色的第一像素，显示第二颜色的第二像素和显示第三颜色的第三像素。第一像素，第二像素和第三像素一起形成一个像素。第一像素，第二像素和第三像素中的每一个包括具有透反射电极的像素电极，显示第一颜色的像素电极上的有机发射层，第三有机发光层上的公共电极和透明补充像素电极和公共电极之间的部件。

2. 发明申请

US20110140597A1 BLUE LIGHT-EMITTING DEVICE AND ORGANIC LIGHT EMITTING DISPLAY INCLUDING THE SAME 有权
标题翻译：蓝色发光装置和包括其的有机发光显示器
公开(公告)号：US20110140597A1
公开(公告)日：2011-06-16
申请号：US12968463
申请日：2010-12-15
申请人： Sung-Hun LEE , Jung-Bae Song
发明人： Sung-Hun LEE , Jung-Bae Song
IPC分类号： H01J1/62
CPC分类号： H01L51/5262 , H01L51/5048 , H01L2251/558
摘要： A blue light-emitting device, and an organic light-emitting display including the blue light-emitting device, has a non-resonance structure including a blue light-emitting layer between a reflective electrode and a transparent electrode, and thus has an excellent process margin, an excellent luminance characteristic even in a wide optical viewing angle, and a high color reproduction satisfying an sRGB blue standard.
摘要翻译：蓝色发光装置和包括蓝色发光装置的有机发光显示器具有在反射电极和透明电极之间包括蓝色发光层的非共振结构，因此具有优异的工艺边缘，即使在宽的光学视角中也具有优异的亮度特性，以及满足sRGB蓝色标准的高色彩再现。

3. 发明申请

US20170179025A1 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170179025A1
公开(公告)日：2017-06-22
申请号：US15256226
申请日：2016-09-02
申请人： Seok-Jung YUN , Sung-Hun LEE , Jee-Hoon HAN , Yong-Won CHUNG , Seong Soon CHO
发明人： Seok-Jung YUN , Sung-Hun LEE , Jee-Hoon HAN , Yong-Won CHUNG , Seong Soon CHO
IPC分类号： H01L23/528 , H01L23/522 , H01L21/768 , H01L27/115
摘要： Vertical memory devices and methods of forming the same are provided. The devices may include a gate line structure including gate lines that are stacked in a first direction and extend in a second direction. The device may also include a first step pattern structure including extended gate lines extending from the gate lines and including first step layers and a second step pattern structure contacting the first step pattern structure, including the extended gate lines and including second step layers. An n-th extended gate line (n is an even number) may be disposed at an upper portion of each of the first step layers, and an (n−1)-th extended gate line may be disposed at an upper portion of each of the second step layers. Each of exposed portions of the (n−1)-th extended gate lines serves as a pad region, and the pad regions have different areas.

4. 发明申请

US20090096005A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING DOUBLE SPACERS ON SIDEWALL OF FLATING GATE, ELECTRONIC DEVICE INCLUDING THE SAME 有权
标题翻译：半导体存储器件，其中包括在平板门，包括它们的电子器件上的双重间隔
公开(公告)号：US20090096005A1
公开(公告)日：2009-04-16
申请号：US12133587
申请日：2008-06-05
申请人： Joon-Sung LIM , Jong-Ho PARK , Hyun-Chul BACK , Sung-Hun LEE
发明人： Joon-Sung LIM , Jong-Ho PARK , Hyun-Chul BACK , Sung-Hun LEE
IPC分类号： H01L27/088
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524
摘要： A semiconductor memory device includes a device isolation layer formed in a semiconductor substrate to define a plurality of active regions. Floating gates are disposed on the active regions. A control gate line overlaps top surfaces of the floating gates and crosses over the active regions. The control gate line has an extending portion disposed in a gap between adjacent floating gates and overlapping sidewalls of the adjacent floating gates. First spacers are disposed on the sidewalls of the adjacent floating gates. Each of the first spacers extends along a sidewall of the active region and along a sidewall of the device isolation layer. Second spacers are disposed between outer sidewalls of the first spacers and the extending portion and are disposed above the device isolation layer. An electronic device including a semiconductor memory device and a method of fabricating a semiconductor memory device are also disclosed.
摘要翻译：半导体存储器件包括形成在半导体衬底中以限定多个有源区的器件隔离层。浮动门设置在活动区域上。控制栅极线与浮动栅极的顶表面重叠，并在有源区域上交叉。控制栅极线具有设置在相邻浮动栅极之间的间隙中的延伸部分和相邻浮动栅极的重叠侧壁之间。第一间隔件设置在相邻浮动门的侧壁上。每个第一间隔件沿着有源区的侧壁并且沿着器件隔离层的侧壁延伸。第二间隔件设置在第一间隔件的外侧壁和延伸部分之间，并且设置在装置隔离层的上方。还公开了一种包括半导体存储器件和制造半导体存储器件的方法的电子器件。

5. 发明申请

US20180336950A1 THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180336950A1
公开(公告)日：2018-11-22
申请号：US16040837
申请日：2018-07-20
申请人： Da Woon JEONG , Sung-Hun LEE , Seokjung YUN , Hyunmog PARK , JoongShik SHIN , Young-Bae YOON
发明人： Da Woon JEONG , Sung-Hun LEE , Seokjung YUN , Hyunmog PARK , JoongShik SHIN , Young-Bae YOON
IPC分类号： G11C16/04 , G11C5/02 , H01L27/11556 , H01L21/768 , H01L27/11524 , H01L27/11582 , H01L27/1157 , G11C5/06
摘要： Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same are provided. Three-dimensional (3D) semiconductor memory devices may include a substrate including a cell array region and a connection region, a lower stack structure including a plurality of lower electrodes vertically stacked on the substrate, the lower stack structure having a first stair step structure extending in a first direction on the connection region and a second stair step structure extending in a second direction substantially perpendicular to the first direction on the connection region, and a plurality of intermediate stack structures vertically stacked on the lower stack structure. Each of the intermediate stack structures includes a plurality of intermediate electrodes vertically stacked and has a third stair step structure extending in the second direction on the connection region. Each of the intermediate stack structures exposes the third stair step structure of the intermediate stack structure disposed thereunder.

6. 发明申请

US20130181278A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE DEVICE 审中-公开
标题翻译：非易失性存储器件和用于制造器件的方法
公开(公告)号：US20130181278A1
公开(公告)日：2013-07-18
申请号：US13608796
申请日：2012-09-10
申请人： Sung-Hun LEE , Sung-Hoi Hur , Jong-Ho Park
发明人： Sung-Hun LEE , Sung-Hoi Hur , Jong-Ho Park
IPC分类号： H01L29/792
CPC分类号： H01L27/1157 , H01L21/764 , H01L27/11524 , H01L29/40114 , H01L29/40117 , H01L29/42324 , H01L29/4234
摘要： Provided is a non-volatile memory device that includes a substrate including a plurality of active regions extending in a first direction and a plurality of element isolation trenches disposed between the active regions, a plurality of tunnel insulating layer patterns and a plurality of storage layer patterns sequentially disposed on the substrate, a plurality of blocking insulating layers and a plurality of gate electrodes disposed on the storage layer patterns and extending in a second direction perpendicular to the first direction, and first insulating layers including air gaps disposed between the active regions on the element isolation trenches and extending in the first direction, wherein the active regions include first active regions and second active regions adjacent to the first active regions, wherein a width of first air gaps is different from a width of second air gaps.
摘要翻译：提供了一种非易失性存储器件，其包括：衬底，其包括在第一方向上延伸的多个有源区和设置在有源区之间的多个元件隔离沟槽;多个隧道绝缘层图案和多个存储层图案顺序地设置在基板上，多个阻挡绝缘层和多个栅电极，其设置在存储层图案上并沿垂直于第一方向的第二方向延伸，并且第一绝缘层包括设置在第一方向上的有源区之间的气隙元件隔离沟槽并沿第一方向延伸，其中有源区包括与第一有源区相邻的第一有源区和第二有源区，其中第一气隙的宽度不同于第二气隙的宽度。

7. 发明申请

US20120240597A1 TEMPERATURE CONTROL APPARATUS FOR SAMPLES STORAGE 审中-公开
标题翻译：样品储存温度控制装置
公开(公告)号：US20120240597A1
公开(公告)日：2012-09-27
申请号：US13424432
申请日：2012-03-20
申请人： Jin-Kwang HONG , Sung-Hun LEE
发明人： Jin-Kwang HONG , Sung-Hun LEE
IPC分类号： G05D23/00 , F25B21/02
CPC分类号： G05D23/1919 , B01L7/00 , B01L7/52 , B01L2300/0829 , B01L2300/1822 , B01L2300/1844 , F25B21/04 , F25B23/006 , F25B2700/2107 , F28D15/0275 , F28D2021/0077
摘要： A temperature control apparatus for sample storage includes: a well block comprising at least one accommodation groove accommodating at least one container for containing at least one sample therein, respectively; and a temperature control unit controlling a respective temperature of the at least one sample to be uniform, wherein the temperature control unit includes: a heat source portion generating heat or cold; and a heat transfer object transferring the heat or the cold of the heat source portion to the well block.
摘要翻译：一种用于样品储存的温度控制装置，包括：一个井壁，包括至少一个容纳槽，容纳至少一个用于容纳至少一个样品的容器的容纳槽; 以及控制所述至少一个样品的相应温度均匀的温度控制单元，其中所述温度控制单元包括：产生热或冷的热源部分; 以及将热源部分的热量或冷气传递到井口块的传热物体。

8. 发明申请

US20100201663A1 METHOD OF DRIVING A DISPLAY PANEL AND DISPLAY APPARATUS FOR PERFORMING THE SAME 审中-公开
标题翻译：驱动显示面板的方法和用于执行显示面板的显示装置
公开(公告)号：US20100201663A1
公开(公告)日：2010-08-12
申请号：US12503897
申请日：2009-07-16
申请人： Sung-Hun LEE , Hyun-Seok JEONG , Doo-Won LEE , Dong-Gyu LEE
发明人： Sung-Hun LEE , Hyun-Seok JEONG , Doo-Won LEE , Dong-Gyu LEE
IPC分类号： G09G5/00
CPC分类号： G09G3/3648 , G09G2310/061 , G09G2320/0238 , G09G2340/0435 , G09G2360/145
摘要： A method of driving a display panel includes; sensing an illumination of a surrounding area which surrounds the display panel, and selectively displaying a black line image on the display panel in accordance with the illumination of the surrounding area.
摘要翻译：驱动显示面板的方法包括：感测围绕显示面板的周围区域的照明，并且根据周围区域的照明，在显示面板上选择性地显示黑线图像。

9. 发明申请

US20170200676A1 THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170200676A1
公开(公告)日：2017-07-13
申请号：US15383213
申请日：2016-12-19
申请人： Da Woon JEONG , Sung-Hun LEE , Seokjung YUN , Hyunmog PARK , JoongShik SHIN , Young-Bae YOON
发明人： Da Woon JEONG , Sung-Hun LEE , Seokjung YUN , Hyunmog PARK , JoongShik SHIN , Young-Bae YOON
IPC分类号： H01L23/528 , H01L27/11556 , H01L27/1157 , G11C16/04 , H01L23/522 , H01L21/768 , G11C16/08 , H01L27/11524 , H01L27/11582
CPC分类号： G11C16/0483 , G11C5/025 , G11C5/06 , H01L21/76816 , H01L21/76877 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L28/00
摘要： Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same are provided. Three-dimensional (3D) semiconductor memory devices may include a substrate including a cell array region and a connection region, a lower stack structure including a plurality of lower electrodes vertically stacked on the substrate, the lower stack structure having a first stair step structure extending in a first direction on the connection region and a second stair step structure extending in a second direction substantially perpendicular to the first direction on the connection region, and a plurality of intermediate stack structures vertically stacked on the lower stack structure. Each of the intermediate stack structures includes a plurality of intermediate electrodes vertically stacked and has a third stair step structure extending in the second direction on the connection region. Each of the intermediate stack structures exposes the third stair step structure of the intermediate stack structure disposed thereunder.

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