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1. 发明授权

US08726119B2 Fast stochastic decode method for low density parity check code 失效
标题翻译：用于低密度奇偶校验码的快速随机解码方法
公开(公告)号：US08726119B2
公开(公告)日：2014-05-13
申请号：US12974505
申请日：2010-12-21
申请人： Jung Won Kang , Il Hong Shin , Jeong Ju Yoo , Won Ryu , Jeongseok Ha , Donghyub Kang , Kais Azzouzi
发明人： Jung Won Kang , Il Hong Shin , Jeong Ju Yoo , Won Ryu , Jeongseok Ha , Donghyub Kang , Kais Azzouzi
IPC分类号： H03M13/05
CPC分类号： H03M13/1111 , H03M13/1108 , H03M13/3707
摘要： Provided is a fast stochastic decoding method for a low density parity check (LDPC) code. The decoding method may include decoding the LDPC code based on an LDPC decoding scheme, using a message expressed by a log-likelihood ratio (LLR) value.
摘要翻译：提供了一种用于低密度奇偶校验（LDPC）码的快速随机解码方法。解码方法可以包括使用由对数似然比（LLR）值表示的消息来基于LDPC解码方案对LDPC码进行解码。

2. 发明申请

US20110154150A1 FAST STOCHASTIC DECODE METHOD FOR LOW DENSITY PARITY CHECK CODE 失效
标题翻译：用于低密度奇偶校验代码的快速STOCHASTIC DECODE方法
公开(公告)号：US20110154150A1
公开(公告)日：2011-06-23
申请号：US12974505
申请日：2010-12-21
申请人： Jung Won KANG , Il Hong Shin , Jeong Ju Yoo , Won Ryu , Jeongseok Ha , Donghyub Kang , Kais Azzouzi
发明人： Jung Won KANG , Il Hong Shin , Jeong Ju Yoo , Won Ryu , Jeongseok Ha , Donghyub Kang , Kais Azzouzi
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： H03M13/1111 , H03M13/1108 , H03M13/3707
摘要： Provided is a fast stochastic decoding method for a low density parity check (LDPC) code. The decoding method may include decoding the LDPC code based on an LDPC decoding scheme, using a message expressed by a log-likelihood ratio (LLR) value.
摘要翻译：提供了一种用于低密度奇偶校验（LDPC）码的快速随机解码方法。解码方法可以包括使用由对数似然比（LLR）值表示的消息来基于LDPC解码方案对LDPC码进行解码。

3. 发明授权

US08901016B2 Method of forming metal oxide hardmask 有权
标题翻译：形成金属氧化物硬掩模的方法
公开(公告)号：US08901016B2
公开(公告)日：2014-12-02
申请号：US13333420
申请日：2011-12-21
申请人： Jeongseok Ha , Hideaki Fukuda , Shintaro Kaido
发明人： Jeongseok Ha , Hideaki Fukuda , Shintaro Kaido
IPC分类号： H01L21/228 , H01L21/02 , H01L21/033
CPC分类号： H01L21/02153 , G03F1/00 , H01L21/0215 , H01L21/02186 , H01L21/02274 , H01L21/0228 , H01L21/0337
摘要： A method of forming a metal oxide hardmask on a template includes: providing a template constituted by a photoresist or amorphous carbon formed on a substrate; and depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula SixM(1-x)Oy wherein M represents at least one metal element, x is less than one including zero, and y is approximately two or a stoichiometrically-determined number.
摘要翻译：在模板上形成金属氧化物硬掩模的方法包括：提供由形成在基板上的光致抗蚀剂或无定形碳构成的模板; 并通过原子层沉积（ALD）在由具有式SixM（1-x）Oy的材料构成的模板上沉积金属氧化物硬掩模，其中M表示至少一种金属元素，x小于包括0的一个，y是约两个或化学计量确定的数目。

4. 发明授权

US07651959B2 Method for forming silazane-based dielectric film 有权
标题翻译：形成硅氮烷基电介质膜的方法
公开(公告)号：US07651959B2
公开(公告)日：2010-01-26
申请号：US11949701
申请日：2007-12-03
申请人： Atsuki Fukazawa , Jeongseok Ha , Nobuo Matsuki
发明人： Atsuki Fukazawa , Jeongseok Ha , Nobuo Matsuki
IPC分类号： H01L21/469
CPC分类号： H01L21/3125 , C23C16/345 , C23C16/36 , C23C16/45512 , C23C16/56 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/02348 , H01L21/3185
摘要： A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.
摘要翻译：形成电介质膜的方法包括：将基本上由Si，N，H和任选地C构成的源气体引入至少一个选自Si-N，Si-Si和Si-H的键到反应室中，放置基板; 在-50℃至50℃下通过等离子体反应将基本上由Si，N，H和任选C构成的硅氮烷基膜沉积在基板上，其中该膜不含基本上由C构成的溶剂的暴露，H和任选的O; 并在热处理室中将基板上的硅氮烷基膜热处理，同时将氧供应源引入热处理室中以从膜中释放C并增加膜中的Si-O键。

5. 发明授权

US08470187B2 Method of depositing film with tailored comformality 有权
标题翻译：使用定制的合成方式沉积薄膜的方法
公开(公告)号：US08470187B2
公开(公告)日：2013-06-25
申请号：US12940906
申请日：2010-11-05
申请人： Jeongseok Ha
发明人： Jeongseok Ha
IPC分类号： B44C1/22
CPC分类号： C23C16/515 , C23C16/325 , C23C16/345 , C23C16/401 , C23C16/45525 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/02348 , H01L21/0337
摘要： A method of depositing a film with a target conformality on a patterned substrate, includes: depositing a first film on a convex pattern and a bottom surface; and depositing a second film on the first film, thereby forming an integrated film having a target conformality, wherein one of the first and second films is a conformal film which is non-flowable when being deposited and has a conformality of about 80% to about 100%, and the other of the first and second films is a flowable film which is flowable when being deposited.
摘要翻译：在图案化衬底上沉积具有目标共形性的膜的方法包括：在凸形图案和底表面上沉积第一膜; 并且在第一膜上沉积第二膜，从而形成具有目标共形性的整体膜，其中第一和第二膜中的一个是保形膜，其在沉积时是不可流动的，并且具有约80％至约 100％，第一和第二膜中的另一个是可沉积的流动膜。

6. 发明申请

US20120111831A1 METHOD OF DEPOSITING FILM WITH TAILORED COMFORMALITY 有权
标题翻译：具有定制性能的膜的沉积方法
公开(公告)号：US20120111831A1
公开(公告)日：2012-05-10
申请号：US12940906
申请日：2010-11-05
申请人： Jeongseok Ha
发明人： Jeongseok Ha
IPC分类号： B05D3/10 , C23C16/50 , B05D3/00 , B05D1/36
CPC分类号： C23C16/515 , C23C16/325 , C23C16/345 , C23C16/401 , C23C16/45525 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/02348 , H01L21/0337
摘要： A method of depositing a film with a target conformality on a patterned substrate, includes: depositing a first film on a convex pattern and a bottom surface; and depositing a second film on the first film, thereby forming an integrated film having a target conformality, wherein one of the first and second films is a conformal film which is non-flowable when being deposited and has a conformality of about 80% to about 100%, and the other of the first and second films is a flowable film which is flowable when being deposited.
摘要翻译：在图案化衬底上沉积具有目标共形性的膜的方法包括：在凸形图案和底表面上沉积第一膜; 并且在第一膜上沉积第二膜，从而形成具有目标共形性的整体膜，其中第一和第二膜中的一个是保形膜，其在沉积时是不可流动的，并且具有约80％至约 100％，第一和第二膜中的另一个是可沉积的流动膜。

7. 发明申请

US20110246854A1 Secure Communication Using Non-Systematic Error Control Codes 失效
标题翻译：使用非系统错误控制代码进行安全通信
公开(公告)号：US20110246854A1
公开(公告)日：2011-10-06
申请号：US13123669
申请日：2009-10-08
申请人： Steven William McLaughlin , Demijan Klinc , Jeongseok Ha
发明人： Steven William McLaughlin , Demijan Klinc , Jeongseok Ha
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： H03M13/01 , H04L63/0428
摘要： A transmitter device (110T) for secure communication includes: an encoder (170) configured to apply a non-systematic error correcting code (NS ECC) to a message, thus producing encoded bits with no clear message bits; and a transceiver (720) configured to transmit the encoded bits over a main channel to a receiver. A method for secure communication includes: encoding a message with an NS ECC to produce an encoded message carrying no message bits in the clear; and transmitting the encoded message over a main channel (120). The NS ECC characteristics result in an eavesdropper channel error probability under a security threshold (320) and a main channel error probability over a reliability threshold (310), whenever an eavesdropper (140) listening on an eavesdropper channel (150) is more than distance Z (220) from the transmitter. Unreliable bits in the encoded bits render the eavesdropper unable to reliably decode messages on the main channel.
摘要翻译：用于安全通信的发射机设备（110T）包括：被配置为向消息应用非系统纠错码（NS ECC）的编码器（170），从而产生不具有清除消息比特的编码比特; 以及收发器（720），其经配置以经由主信道将编码比特发送到接收机。一种用于安全通信的方法包括：对具有NS ECC的消息进行编码以产生在清除中不携带消息比特的编码消息; 以及通过主信道（120）发送编码的消息。每当在窃听者通道（150）上收听的窃听者（140）超过距离时，NS ECC特征导致在安全阈值（320）下的窃听者信道错误概率和可靠性阈值（310）上的主要信道错误概率 Z（220）。编码比特中的不可靠比特会使窃听者无法可靠地解码主频道上的消息。

8. 发明授权

US07825040B1 Method for depositing flowable material using alkoxysilane or aminosilane precursor 有权
标题翻译：使用烷氧基硅烷或氨基硅烷前体沉积可流动材料的方法
公开(公告)号：US07825040B1
公开(公告)日：2010-11-02
申请号：US12489252
申请日：2009-06-22
申请人： Atsuki Fukazawa , Hisashi Tazawa , Jeongseok Ha , Shintaro Ueda
发明人： Atsuki Fukazawa , Hisashi Tazawa , Jeongseok Ha , Shintaro Ueda
IPC分类号： H01L21/31
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02337
摘要： A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −50° C. to 100° C.
摘要翻译：用绝缘膜填充凹部的方法包括：将不含Si-C键或C-C键的烷氧基硅烷或氨基硅烷前体引入反应室，其中放置具有包括凹陷的不规则表面的基板; 以及在基板的不规则表面上沉积可流动的含Si绝缘膜，以通过在-50℃至100℃的等离子体反应来填充凹槽。

9. 发明申请

US20100098048A1 METHOD FOR HYBRID MEDIUM ACCESS CONTROL FOR VEHICLE COMMUNICATION 审中-公开
标题翻译：用于车辆通信的混合中等接入控制的方法
公开(公告)号：US20100098048A1
公开(公告)日：2010-04-22
申请号：US12474963
申请日：2009-05-29
申请人： Moonsoo KANG , Sangwoo Lee , Jeonghoon Mo , Hyun Jeong Yun , Kyeong-Soo Han , Hyun Seo Oh , Dong Yong Kwak , Jeongseok Ha
发明人： Moonsoo KANG , Sangwoo Lee , Jeonghoon Mo , Hyun Jeong Yun , Kyeong-Soo Han , Hyun Seo Oh , Dong Yong Kwak , Jeongseok Ha
IPC分类号： H04J3/00 , H04L12/413
CPC分类号： H04L12/413
摘要： A method for hybrid media access control for vehicle communication is provided. The method divides a radio channel into time slots, which are predetermined time units, and sets terminals as owners or non-owners for the divided time slots to be able to access the channel. Accordingly, it is possible to reduce the probability of contention by distributed access to the slots and provide a MAC protocol having excellent performance.
摘要翻译：提供了一种用于车辆通信的混合媒体访问控制的方法。该方法将无线电信道划分为预定时间单位的时隙，并将终端设置为分割时隙的所有者或非所有者以能够访问该信道。因此，可以通过对时隙的分布式访问来降低竞争的概率，并提供具有优异性能的MAC协议。

10. 发明授权

US08667380B2 Secure communication using non-systematic error control codes 失效
标题翻译：使用非系统错误控制代码进行安全通信
公开(公告)号：US08667380B2
公开(公告)日：2014-03-04
申请号：US13123669
申请日：2009-10-08
申请人： Steven William McLaughlin , Demijan Klinc , Jeongseok Ha
发明人： Steven William McLaughlin , Demijan Klinc , Jeongseok Ha
IPC分类号： H03M13/03 , H03M13/00
CPC分类号： H03M13/01 , H04L63/0428
摘要： A transmitter device (110T) for secure communication includes: an encoder (170) configured to apply a non-systematic error correcting code (NS ECC) to a message, thus producing encoded bits with no clear message bits; and a transceiver (720) configured to transmit the encoded bits over a main channel to a receiver. A method for secure communication includes: encoding a message with an NS ECC to produce an encoded message carrying no message bits in the clear; and transmitting the encoded message over a main channel (120). The NS ECC characteristics result in an eavesdropper channel error probability under a security threshold (320) and a main channel error probability over a reliability threshold (310), whenever an eavesdropper (140) listening on an eavesdropper channel (150) is more than distance Z (220) from the transmitter. Unreliable bits in the encoded bits render the eavesdropper unable to reliably decode messages on the main channel.
摘要翻译：用于安全通信的发射机设备（110T）包括：被配置为向消息应用非系统纠错码（NS ECC）的编码器（170），从而产生不具有清除消息比特的编码比特; 以及收发器（720），其经配置以经由主信道将编码比特发送到接收机。一种用于安全通信的方法包括：对具有NS ECC的消息进行编码以产生在清除中不携带消息比特的编码消息; 以及通过主信道（120）发送编码的消息。每当在窃听者通道（150）上收听的窃听者（140）超过距离时，NS ECC特征导致在安全阈值（320）下的窃听者信道错误概率和可靠性阈值（310）上的主要信道错误概率 Z（220）。编码比特中的不可靠比特会使窃听者无法可靠地解码主频道上的消息。

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