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1. 发明申请

US20070129473A1 Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same 有权
标题翻译：有机绝缘体组合物，具有该有机绝缘体组合物的有机绝缘膜，具有该有机绝缘体组合物的有机薄膜晶体管和具有该有机绝缘体组合物的电子器件及其形成方法
公开(公告)号：US20070129473A1
公开(公告)日：2007-06-07
申请号：US11481843
申请日：2006-07-07
申请人： Jung Shin , Eun Lee , Eun Jeong , Joo Kim , Hyun Moon , Sang Lee
发明人： Jung Shin , Eun Lee , Eun Jeong , Joo Kim , Hyun Moon , Sang Lee
IPC分类号： C04B41/50 , B60C1/00
CPC分类号： H01L51/052 , H01L21/02126 , H01L21/02175 , H01L21/3122 , H01L51/0036 , H01L51/0055 , Y10T428/31663
摘要： Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.
摘要翻译：本发明的实施例涉及有机绝缘体组合物，具有有机绝缘体组合物的有机绝缘膜，具有有机绝缘膜的有机薄膜晶体管，具有有机薄膜晶体管的电子器件及其形成方法。本发明的其它示例性实施方案涉及包含可用于改善有机薄膜晶体管的载流子迁移率和滞后的氟化硅烷化合物的有机绝缘体组合物。提供了包含氟化硅烷化合物和使用其的有机薄膜晶体管的有机绝缘体组合物。可以通过使用有机绝缘体组合物来改善有机薄膜晶体管的滞后和物理性质，例如阈值电压和/或电荷载流子迁移率。有机薄膜晶体管可以有效地用于制造包括液晶显示器（LCD）和/或光伏器件的各种电子器件。

2. 发明申请

US20060255334A1 Novel organic polymer semiconductor compounds, methods of forming organic polymer semiconductor thin film using the same, and organic thin film transistors using the same 有权
标题翻译：新颖的有机聚合物半导体化合物，使用其的有机聚合物半导体薄膜的形成方法以及使用其的有机高分子半导体薄膜晶体管
公开(公告)号：US20060255334A1
公开(公告)日：2006-11-16
申请号：US11270472
申请日：2005-11-10
申请人： Eun Lee , Joo Kim , Bang Lee , Sang-Yoon Lee , Eun Jeong
发明人： Eun Lee , Joo Kim , Bang Lee , Sang-Yoon Lee , Eun Jeong
IPC分类号： H01L29/08
CPC分类号： H01L51/0036 , C08G61/122 , C08G61/126 , H01L51/0035 , H01L51/0545
摘要： Disclosed herein is an organic polymer semiconductor compound, a method of forming an organic polymer semiconductor thin film using the same, and an organic thin film transistor using the same. Example embodiments of this invention pertain to an organic polymer semiconductor having a side chain including a removable substituent, and to an organic thin film transistor using the organic polymer semiconductor for an organic active layer, which has lower leakage current, higher charge mobility, and/or a higher on/off ratio.
摘要翻译：本文公开了有机聚合物半导体化合物，使用其的有机聚合物半导体薄膜的形成方法和使用其的有机高分子半导体薄膜晶体管。本发明的示例性实施方案涉及具有包含可除去取代基的侧链的有机聚合物半导体以及使用有机有机层的有机聚合物半导体的有机薄膜晶体管，其具有较低的漏电流，较高的电荷迁移率和/ 或更高的开/关比。

3. 发明申请

US20060177961A1 Method for fabricating organic thin film transistor by application of electric field 有权
标题翻译：通过施加电场制造有机薄膜晶体管的方法
公开(公告)号：US20060177961A1
公开(公告)日：2006-08-10
申请号：US11196382
申请日：2005-08-04
申请人： Chang Kim , Eun Jeong , Sang Lee , Bon Koo , Eun Lee
发明人： Chang Kim , Eun Jeong , Sang Lee , Bon Koo , Eun Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0002 , H01L51/0036 , H01L51/0516 , H01L51/0545
摘要： A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioff ratio.
摘要翻译：一种通过施加电场来制造有机薄膜晶体管的方法。该方法包括以下步骤：制造包括栅电极，栅极绝缘层，有机半导体层和层压在衬底上的源极/漏极之间的公共有机薄膜晶体管，以及在源极之间施加直流（DC）电压和漏电极，并向栅电极施加交流（AC）电压。通过简单的处理可以回收各层的层叠后劣化的有机薄膜晶体管的特性。因此，通过该方法制造的OTFT具有低阈值电压，低驱动电压，高电荷载流子迁移率和高I / O比较的高电荷载流子迁移率。

4. 发明申请

US20060151781A1 Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same 有权
标题翻译：包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法
公开(公告)号：US20060151781A1
公开(公告)日：2006-07-13
申请号：US11296704
申请日：2005-12-08
申请人： Joo Kim , Eun Lee , Bang Lee , Bon Koo , Hyun Park , Sang Lee
发明人： Joo Kim , Eun Lee , Bang Lee , Bon Koo , Hyun Park , Sang Lee
IPC分类号： H01L29/08
CPC分类号： H01L21/0212 , H01L21/02282 , H01L21/3127 , H01L21/31691 , H01L51/0036 , H01L51/052 , H01L51/0529 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.
摘要翻译：包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜在栅绝缘层和有机半导体层之间。有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。

5. 发明申请

US20060113527A1 Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
标题翻译：星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
公开(公告)号：US20060113527A1
公开(公告)日：2006-06-01
申请号：US11116326
申请日：2005-04-28
申请人： Kook Han , Eun Jeong , Chang Kim , Eun Lee
发明人： Kook Han , Eun Jeong , Chang Kim , Eun Lee
IPC分类号： H01L51/00 , H01B1/12
CPC分类号： H01L51/0068 , H01L51/0036 , H01L51/0052 , H01L51/0062 , H01L51/0067 , H01L51/0069 , H01L51/007 , H01L51/0071 , H01L51/0072 , H01L51/0545
摘要： A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.
摘要翻译：具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

6. 发明申请

US20060151779A1 Novel thiophene-thiazole derivatives and organic thin film transistors using the same 审中-公开
标题翻译：新型噻吩 - 噻唑衍生物和使用其的有机薄膜晶体管
公开(公告)号：US20060151779A1
公开(公告)日：2006-07-13
申请号：US11146146
申请日：2005-06-07
申请人： Eun Lee , Joo Kim , Bang Lee , Kook Han
发明人： Eun Lee , Joo Kim , Bang Lee , Kook Han
IPC分类号： H01L51/00
CPC分类号： H01L51/0036 , H01L51/0043 , H01L51/0512
摘要： Novel thiophene-thiazole derivatives and organic thin film transistors using the derivatives. The thiophene-thiazole derivatives are organic polymer semiconductor materials in which a thiophene having p-type semiconductor characteristics is joined to a thiazole having n-type semiconductor characteristics in an alternating manner to have a head-to-tail structure. The use of the thiophene-thiazole derivatives as materials for an organic active layer enables fabrication of organic thin film transistors with low leakage current, high charge carrier mobility and high on/off current ratio.
摘要翻译：新型噻吩 - 噻唑衍生物和使用衍生物的有机薄膜晶体管。噻吩 - 噻唑衍生物是其中具有p型半导体特性的噻吩以具有n型半导体特性的噻唑以交替方式结合以具有头对尾结构的有机聚合物半导体材料。使用噻吩 - 噻唑衍生物作为有机活性层的材料可以制造具有低泄漏电流，高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。

7. 发明申请

US20080054807A1 PLASMA DISPLAY PANEL 审中-公开
标题翻译：等离子显示面板
公开(公告)号：US20080054807A1
公开(公告)日：2008-03-06
申请号：US11931446
申请日：2007-10-31
申请人： Jae KIM , Chung Jeon , Eun Lee , Young Ahn , Seok Kang , Sung Ahn
发明人： Jae KIM , Chung Jeon , Eun Lee , Young Ahn , Seok Kang , Sung Ahn
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , H01J11/24 , H01J11/32 , H01J2211/245 , H01J2211/323 , H01J2211/326 , H01J2211/38
摘要： A plasma display panel having higher light-emitting luminance and efficiency of a discharge cell includes: a plurality of first barriers successively formed on a substrate at predetermined intervals; a plurality of first sustain electrodes formed at a width more than 40% of a pixel pitch, which is an overall distance of four of the barriers, to be orthogonal to the first barriers; a plurality of second sustain electrodes spaced apart from the first sustain electrodes at a distance less than 20% of the pixel pitch and mated with the first sustain electrodes one by one; a dielectric layer formed at a thickness of 25 μm or more to cover the first and second sustain electrodes; and a plurality of pads formed on some of the dielectric layer corresponding to the first sustain electrodes and the second sustain electrodes in each discharge cell.
摘要翻译：具有较高的发光亮度和放电单元的效率的等离子体显示面板包括：以预定间隔连续形成在基板上的多个第一屏障; 多个第一维持电极，其形成为与所述第一屏障正交的宽度大于所述屏障的四个的总距离的像素间距的40％以上的宽度; 多个第二维持电极，以与所述第一维持电极间隔开的距离小于所述像素间距的20％，并与所述第一维持电极逐一配合; 形成为厚度为25μm以上的电介质层，以覆盖第一和第二维持电极; 以及形成在与放电单元中的第一维持电极和第二维持电极对应的介电层的一部分上的多个焊盘。

8. 发明申请

US20070232028A1 Method of manufacturing silicon nanowires using porous glass template and device comprising silicon nanowires formed by the same 有权
标题翻译：使用多孔玻璃模板制造硅纳米线的方法和由其形成的硅纳米线的装置
公开(公告)号：US20070232028A1
公开(公告)日：2007-10-04
申请号：US11444115
申请日：2006-05-31
申请人： Eun Lee , Byoung Choi , Soon Kwon , Kyung Cho , Jae Lee
发明人： Eun Lee , Byoung Choi , Soon Kwon , Kyung Cho , Jae Lee
IPC分类号： H01L29/06 , H01L21/8242 , H01L21/20
CPC分类号： C30B29/06 , B82Y10/00 , B82Y30/00 , C30B11/12 , C30B25/00 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L31/1804 , H01L33/20 , H01S5/10 , H01S5/3031 , Y02E10/547 , Y02P70/521 , Y10S977/762 , Y10S977/778 , Y10S977/78 , Y10S977/784 , Y10S977/785 , Y10S977/932 , Y10S977/949
摘要： A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a device including silicon nanowires formed using the above exemplary method according to the present invention can be effectively applied to various devices, for example, electronic devices such as field effect transistors, sensors, photodetectors, light emitting diodes, laser diodes, etc.
摘要翻译：制造硅纳米线的方法的特征在于，使用具有掺杂有铒或铒前体的纳米孔的多孔玻璃模板，通过固 - 液 - 固体方法或气液固化法形成和生长硅纳米线。此外，使用根据本发明的上述示例性方法形成的包括硅纳米线的器件可以有效地应用于各种器件，例如诸如场效应晶体管，传感器，光电检测器，发光二极管，激光二极管等的电子器件。

9. 发明申请

US20070185261A1 Siloxane dispersant and nanoparticle paste composition comprising the same 有权
标题翻译：硅氧烷分散剂和包含其的纳米颗粒糊组合物组合物
公开(公告)号：US20070185261A1
公开(公告)日：2007-08-09
申请号：US11495408
申请日：2006-07-27
申请人： Jae Lee , Seong Choi , Eun Lee , Jae Choi
发明人： Jae Lee , Seong Choi , Eun Lee , Jae Choi
IPC分类号： C08L83/04 , C08G77/26 , C08K3/28 , C08K3/30
CPC分类号： C08J3/20 , C08G77/22 , C08G77/26 , C08J2383/04 , C08J2383/06 , C08K5/544 , C08K9/06 , C08L83/04
摘要： Provided is a siloxane dispersant having a structure including a head part having an affinity for nanoparticles and a tail part having an affinity for a polydimethylsiloxane (PDMS) resin, and a nanoparticle paste composition comprising the same. The dispersant significantly improves dispersion efficiency of a polydimethylsiloxane resin system which is used in preparation of high-output light sources such as UV LEDs and the like.
摘要翻译：本发明提供一种具有结构的硅氧烷分散剂，该结构包括对纳米颗粒具有亲和性的头部和对聚二甲基硅氧烷（PDMS）树脂具有亲和性的尾部，以及包含该聚合物的纳米粒子糊组合物。分散剂显着提高了用于制备诸如UV LED等的高输出光源的聚二甲基硅氧烷树脂体系的分散效率。

10. 发明申请

US20070132393A1 Method for forming a dielectric layer in a plasma display panel 审中-公开
标题翻译：在等离子体显示面板中形成电介质层的方法
公开(公告)号：US20070132393A1
公开(公告)日：2007-06-14
申请号：US11435713
申请日：2006-05-18
申请人： Young Kim , Eun Lee , Woong Choi
发明人： Young Kim , Eun Lee , Woong Choi
IPC分类号： H01J17/49
CPC分类号： H01J9/20 , H01J9/02 , H01J11/12 , H01J11/38
摘要： A method of forming a dielectric layer in PDP is provided. The method according to the present invention comprises, (a) forming a green sheet comprising a base film and a film-forming layer disposed on a surface of the base film, wherein the film-forming layer is formed on the surface of the base film by applying onto said surface of the base film a slurry containing a PbO-based glass powder, a binder, a dispersing agent, a plasticizer and a solvent; (b) transferring the film-forming layer of the green sheet onto a surface of a substrate, wherein electrodes are disposed on the surface of the substrate; and (c) sintering the film-forming layer.
摘要翻译：提供了一种在PDP中形成电介质层的方法。根据本发明的方法包括：（a）形成包含基膜和设置在基膜表面上的成膜层的生片，其中成膜层形成在基膜的表面上通过在基膜的表面上施加含有PbO基玻璃粉末，粘合剂，分散剂，增塑剂和溶剂的浆料; （b）将生片的成膜层转印到基板的表面上，其中电极设置在基板的表面上; 和（c）烧结成膜层。

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