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    • 1. 发明授权
    • Semiconductor memory device and method of operating the same
    • 半导体存储器件及其操作方法
    • US08520440B2
    • 2013-08-27
    • US13297467
    • 2011-11-16
    • Jung Ryul AhnSang Hyun OhJum Soo Kim
    • Jung Ryul AhnSang Hyun OhJum Soo Kim
    • G11C16/04
    • G11C16/0483G11C16/16H01L27/11524
    • A method of operating a semiconductor memory device includes a memory array having memory cell strings including a first and a second memory cell groups having memory cells, a first and a second dummy elements, a drain select transistor and a source select transistor, wherein the first memory cell group and the second memory cell group are arranged between the drain select transistor and the source select transistor; connecting electrically the first memory cell group to the second memory cell group during a program operation or a read operation of the first memory cell group or the second memory cell group; and performing separately an erase operation of the first memory cell group and an erase operation of the second memory cell group, selecting simultaneously one of the first dummy element and the second dummy element during the erase operation of the selected memory cell group.
    • 一种操作半导体存储器件的方法包括具有存储单元串的存储器阵列,存储单元串包括具有存储单元的第一和第二存储单元组,第一和第二虚设元件,漏极选择晶体管和源选择晶体管,其中第一 存储单元组和第二存储单元组布置在漏极选择晶体管和源极选择晶体管之间; 在第一存储单元组或第二存储单元组的编程操作或读操作期间将第一存储单元组电连接到第二存储单元组; 以及分别执行第一存储单元组的擦除操作和第二存储单元组的擦除操作,在所选存储单元组的擦除操作期间同时选择第一虚拟元件和第二虚设元件中的一个。
    • 6. 发明授权
    • Light emitting diode having distributed Bragg reflector
    • 具有分布式布拉格反射器的发光二极管
    • US08373188B2
    • 2013-02-12
    • US13100879
    • 2011-05-04
    • Duk Il SuhJae Moo KimKyoung Wan KimYeo Jin YoonYe Seul KimSang Hyun OhJin Woong Lee
    • Duk Il SuhJae Moo KimKyoung Wan KimYeo Jin YoonYe Seul KimSang Hyun OhJin Woong Lee
    • H01L33/00
    • H01L33/46H01L33/10H01L33/38H01L33/42H01L33/50H01L2224/48091H01L2224/48247H01L2224/48257H01L2224/73265H01L2924/181H01L2924/00012H01L2924/00014
    • Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.
    • 本发明的示例性实施例提供了具有分布式布拉格反射器的发光二极管。 根据示例性实施例的发光二极管(LED)包括布置在基板的第一表面上的发光结构,所述发光结构包括第一导电类型半导体层,第二导电类型半导体层, 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上,第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色波长范围内的第一波长的光,绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90%的反射率。 第一分布布拉格反射器具有层叠结构,其具有交替层叠的SiO 2层和Nb 2 O 5层。